公开(公告)号：WO2005022562A1

公开(公告)日：2005-03-10

申请号：PCT/JP2004/012781

申请日：2004-08-27

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY ,  MATSUMOTO, Kaname ,  MUKAIDA, Masashi ,  YOSHIDA, Yutaka ,  ICHINOSE, Ataru ,  HORII, Shigeru

Inventor： MATSUMOTO, Kaname ,  MUKAIDA, Masashi ,  YOSHIDA, Yutaka ,  ICHINOSE, Ataru ,  HORII, Shigeru

IPC: H01B12/06

CPC classification number: C23C14/02 ,  C23C14/028 ,  C23C14/087 ,  H01L39/2454 ,  H01L39/2483 ,  H01L39/2487 ,  Y10S505/816 ,  Y10T428/24322 ,  Y10T428/2457

Abstract: The present invention relates to a superconducting film having a substrate and a superconductor layer formed on the substrate, in which nano grooves are formed parallel to a current flowing direction on a substrate surface on which the superconductor layer is formed and two-dimensional crystal defects are introduced in the superconductor layer on the nano grooves, and a method of manufacturing this superconducting film. A superconducting film of the invention, which is obtained at low cost and has very high Jc, is useful in applications such as cables, magnets, shields, current limiters, microwave devices, and semifinished products of these articles.

Abstract translation: 本发明涉及一种超导膜，其具有在基板上形成有基板和超导体层的超导膜，其中，在形成超导体层的基板表面上平行于电流流动方向形成有纳米槽，二维晶体缺陷为 引入到纳米槽上的超导体层中，以及制造该超导膜的方法。 本发明的低成本且具有非常高的Jc的本发明的超导膜可用于诸如电缆，磁体，屏蔽，限流器，微波器件和这些制品的半成品的应用中。

公开(公告)号：WO2004055241A2

公开(公告)日：2004-07-01

申请号：PCT/JP2003/015999

申请日：2003-12-12

Applicant: SUGA TEST INSTRUMENTS CO., LTD. ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  THE CIRCLE FOR THE PROMOTION OF SCIENCE AND ENGINEERING ,  YOSHIDA, Naohiro ,  ABE, Osamu ,  UEMURA, Ryu ,  WATANABE, Hiroshi

Inventor： YOSHIDA, Naohiro ,  ABE, Osamu ,  UEMURA, Ryu ,  WATANABE, Hiroshi

IPC: C25B

CPC classification number: G01N33/18 ,  G01N2033/1873 ,  Y02E60/366

Abstract: To provide a water electrolysis device for the determination of stable isotopic composition of water and a water electrolysis method for stable isotopic composition of water capable of analyzing many samples with ease, with safety and at low cost in a very short time, and rapidly analyzing 17O. The water electrolysis device performing mass spectrometry of hydrogen or oxygen stable isotopic composition includes: a proton exchange membrane which is made of fluorocarbon polymer plated non-electrolytically with platinum, iridium, rhodium or iridium-rhodium alloy, and a cathode and an anode made of porous titanium plated with platinum and sandwiching the proton exchange membrane, in which water is electrolyzed by introducing it into the anode side chamber and supplying a DC current between the anode and the cathode, and oxygen gas generated at the anode and hydrogen gas generated at the cathode are respectively allowed to flow into a isotope ratio mass spectrometer. Also it is provided that a water electrolysis method for stable isotopic composition of water using the water electrolysis device.

Abstract translation: 提供用于测定水的稳定同位素组成的水电解装置和用于稳定同位素组成的水的电解方法，其能够在非常短的时间内以安全和低成本容易地分析许多样品，并快速分析17O 。 执行氢或氧稳定同位素组成的质谱分析的水电解装置包括：由铂，铱，铑或铱 - 铑合金非电解镀氟碳聚合物制成的质子交换膜，以及阴极和阳极，由 镀铂的多孔钛和夹着质子交换膜，其中通过将水引入阳极侧室并在阳极和阴极之间提供直流电流以及在阳极处产生的氧气和在 阴极分别流入同位素比质谱仪。 还提供了使用水电解装置的用于水的稳定同位素组成的水电解方法。

公开(公告)号：WO2008073385A1

公开(公告)日：2008-06-19

申请号：PCT/US2007/025249

申请日：2007-12-11

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  SCHMIDT, Mathew, C. ,  KIM, Kwang, C. ,  SATO, Hitoshi ,  DENBAARS, Steven, P. ,  SPECK, James, S. ,  NAKAMURA, Shuji

Inventor： SCHMIDT, Mathew, C. ,  KIM, Kwang, C. ,  SATO, Hitoshi ,  DENBAARS, Steven, P. ,  SPECK, James, S. ,  NAKAMURA, Shuji

IPC: H01L21/00

CPC classification number: H01L33/0075 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01S5/34333 ,  H01S2304/04

Abstract: A method of device growth and p-contact processing that produces improved performance for non-polar Ill-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type Ill-nitride growth technique, and a transparent conducting oxide for the electrodes.

Abstract translation: 一种器件生长和p接触处理的方法，其为非极性III族氮化物发光二极管和激光二极管产生改进的性能。 使用低缺陷密度衬底或模板的关键组件，厚量子阱，低温p型III族氮化物生长技术和用于电极的透明导电氧化物。

公开(公告)号：WO2007030709A3

公开(公告)日：2007-03-15

申请号：PCT/US2006/035012

申请日：2006-09-08

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  IZA, Michael ,  BAKER, Troy, J. ,  HASKELL, Benjamin, A. ,  DENBAARS, Steven, P. ,  NAKAMURA, Shuji

Inventor： IZA, Michael ,  BAKER, Troy, J. ,  HASKELL, Benjamin, A. ,  DENBAARS, Steven, P. ,  NAKAMURA, Shuji

IPC: H01L21/20

Abstract: A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the substrate prior to the growth of the semi-polar nitride semiconductor thin film.

公开(公告)号：WO2007008198A1

公开(公告)日：2007-01-18

申请号：PCT/US2005/024239

申请日：2005-07-08

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  FUJITO, Kenji ,  HASHIMOTO, Tadao ,  NAKAMURA, Shuji

Inventor： FUJITO, Kenji ,  HASHIMOTO, Tadao ,  NAKAMURA, Shuji

IPC: C30B7/10

CPC classification number: C30B7/105 ,  C30B7/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1096

Abstract: A method of growing high-quality, group-III nitride, bulk single crystals. The group III-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group III-nitride polycrystals or group-III metal having a grain size of at least 10 microns or more and a seed crystal that is a group-III nitride single crystal. The group III-nitride polycrystals may be recycled from previous ammonothermal process after annealing in reducing gas at more then 600 ° C. The autoclave may include an internal chamber that is filled with ammonia, wherein the ammonia is released from the internal chamber into the autoclave when the ammonia attains a supercritical state after the heating of the autoclave, such that convection of the supercritical ammonia transfers source materials and deposits the transferred source materials onto seed crystals, but undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals.

Abstract translation: 生长高品质，III族氮化物，大块单晶的方法。 III族氮化物本体晶体在超临界氨的高压釜中使用源材料或营养物生长，所述源材料或营养物是具有至少10微米或更小的晶粒尺寸的III族氮化物多晶体或III族金属，以及晶种， 是III族氮化物单晶。 III族氮化物多晶体可以在退火之后的先前的氨热处理中再循环，还原气体在600℃以上。 高压釜可以包括填充有氨的内部室，其中当氨在高压釜加热后达到超临界状态时，氨从内部室释放到高压釜中，使得超临界氨的对流转移源材料和 将转移的源材料沉积到晶种上，防止源材料的未溶解颗粒转移并沉积在晶种上。

公开(公告)号：WO2006123800A2

公开(公告)日：2006-11-23

申请号：PCT/JP2006/310079

申请日：2006-05-15

Applicant: KURUME UNIVERSITY ,  Japan Science and Technology Agency ,  ISHII, Kojiro ,  TAKAHASHI, Kohta

Inventor： ISHII, Kojiro ,  TAKAHASHI, Kohta

IPC: C12N15/11

CPC classification number: C12N15/11 ,  C12N15/111 ,  C12N2310/14 ,  C12N2320/50 ,  C12N2330/10 ,  C12N2330/30

Abstract: The present invention provides an RNA interference induction element containing a nucleotide sequence selected from among the nucleotide sequences (a) to (c) below: (a) a nucleotide sequence containing SEQ ID NO:1 or a sequence complementary thereto; (b) a nucleotide sequence containing at least 15 continuous nucleotides present in the nucleotide sequence (a) above, and possessing RNA interference induction potential; (c) a nucleotide sequence having a homology of at least 70% to any one of the nucleotide sequences (a) and (b) above, and possessing RNA interference induction potential. Using the RNA interference induction element of the present invention, it is easily possible to knock down a desired target gene, and to produce a siRNA for a desired target gene.

Abstract translation: 本发明提供含有选自以下核苷酸序列（a）〜（c）的核苷酸序列的RNA干扰诱导元件：（a）含有SEQ ID NO：1的核苷酸序列或其互补序列; （b）含有上述核苷酸序列（a）中存在的至少15个连续核苷酸并具有RNA干扰诱导电位的核苷酸序列; （c）与上述核苷酸序列（a）和（b）中任何一个具有至少70％同源性且具有RNA干扰诱导电位的核苷酸序列。 使用本发明的RNA干扰诱导元件，可以容易地敲低所需的靶基因，并产生所需靶基因的siRNA。

公开(公告)号：WO2005122267A2

公开(公告)日：2005-12-22

申请号：PCT/US2005/018823

申请日：2005-05-31

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA? ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY? ,  HASKELL, Benjamin, A. ,  MCLAURIN, Melvin, B. ,  DENBAARS, Steven, P. ,  SPECK, James, S. ,  NAKAMURA, Shuji

Inventor： HASKELL, Benjamin, A. ,  MCLAURIN, Melvin, B. ,  DENBAARS, Steven, P. ,  SPECK, James, S. ,  NAKAMURA, Shuji

IPC: H01L29/15

CPC classification number: C30B29/406 ,  C30B25/02 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02647 ,  H01L33/007

Abstract: A method of growing highly planar, fully transparent and specular m -plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m -plane gaN films are produced for use as substrates for polarization-free device growth.

Abstract translation: 生长高度平面，完全透明和镜面的m面氮化镓（GaN）膜的方法。 该方法通过侧向过度生长技术显着降低结构缺陷密度。 制造高品质，均匀，厚的m面GaN膜用作无极化器件生长的衬底。

公开(公告)号：WO2005064643A1

公开(公告)日：2005-07-14

申请号：PCT/US2003/039355

申请日：2003-12-11

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA ,  JAPAN SCIENCE AND TECHNOLOGY AGENCY ,  CRAVEN, Michael, D. ,  DENBAARS, Steven, P.

Inventor： CRAVEN, Michael, D. ,  DENBAARS, Steven, P.

IPC: H01L21/00

CPC classification number: H01L33/24 ,  C30B25/02 ,  C30B25/04 ,  C30B25/105 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  C30B29/605 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/155 ,  H01L29/2003 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/06 ,  H01L33/32 ,  H01L33/325

Abstract: A method of fabricating non-polar a-plane GaN / (A1,B,In,Ga)N multiple quantum wells (MQWs). The a-plane MQWs are grown on the appropriate GaN / sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 Å to 70 Å. The room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations. Optimal PL emission intensity is obtained at a quantum well width of 52 Å for the a-plane MQWs.

Abstract translation: 制造非极性a面GaN /（Al，B，In，Ga）N多量子阱（MQW）的方法。 a面MQW通过金属有机化学气相沉积（MOCVD）在适当的GaN /蓝宝石模板层上生长，阱宽度范围为20埃至70埃。 来自a-plane MQW的室温光致发光（PL）发射能量遵循使用自适应泊松 - 薛定er（SCPS）计算建模的平方井趋势。 对于a面MQW，在52的量子阱宽度处获得最佳PL发射强度。

公开(公告)号：US12237423B2

公开(公告)日：2025-02-25

申请号：US14912702

申请日：2014-08-28

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Hiroshi Fujioka ,  Atsushi Kobayashi

IPC: H01L29/04 ,  H01L29/20 ,  H01L29/786

Abstract: Transistors using nitride semiconductor layers as channels were experimentally manufactured. The nitride semiconductor layers were all formed through a sputtering method. A deposition temperature was set at less than 600° C., and a polycrystalline or amorphous InxGayAlzN layer was obtained. When composition expressed with a general expression InxGayAlzN (where x+y+z=1.0) falls within a range of 0.3≤x≤1.0 and 0≤z

公开(公告)号：US20250046365A1

公开(公告)日：2025-02-06

申请号：US18926916

申请日：2024-10-25

Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Inventor： Satoshi Sugahara ,  Daiki Kitagata ,  Shuichiro Yamamoto

IPC: G11C11/412 ,  G11C11/418 ,  G11C11/419 ,  G11C11/56 ,  G11C14/00 ,  H03K3/356

Abstract: An electronic circuit includes a cell array including memory cells each including a bistable circuit that includes first and second inverter circuits, each having a first mode characterized by there being substantially no hysteresis in transfer characteristics and a second mode characterized by there being hysteresis in the transfer characteristics, and being switchable between the first and second modes, and a control circuit configured to, after powering off a first memory cell that store data that are not required to be retained, put the bistable circuit in a remaining second memory cell into the second mode, and supply a second power supply voltage that allows the bistable circuit in the second mode to retain data and is lower than a first power supply voltage supplied to the bistable circuit when data is read and/or written, to the bistable circuit in the second memory cell while maintaining the second mode.