Abstract:
This disclosure provides implementations of electromechanical systems resonator structures, devices, apparatus, systems, and related processes. In one aspect, a contour mode resonator device includes a first conductive layer with a plurality of first layer electrodes including a first electrode (2124) at which a first input signal can be provided and a second electrode (2144) at which a first output signal can be provided. A second conductive layer includes a plurality of second layer electrodes including a first electrode (2134) proximate the first electrode of the first conductive layer and a second electrode (2154) proximate the second electrode of the first conductive layer. A second signal can be provided at the first electrode or the second electrode of the second conductive layer to cooperate with the first input signal or the first output signal to define a differential signal. A piezoelectric layer (2108) is disposed between the first conductive layer and the second conductive layer. The piezoelectric layer includes a piezoelectric material. The piezoelectric layer is substantially oriented in a plane and capable of movement in the plane responsive to an electric field between the first electrodes or the second electrodes. The device can be used in the transmission (TX) or receiver (RX) path of a duplexer or as balun.
Abstract:
An electronic package-on-package system with integrated shielding. The package-on-package system includes a first package having a first die and a second package having a second die and a substrate. The system also includes a conductive shield having a first portion and a second portion. The first portion is disposed between the first die and the second die and the second portion is disposed between the substrate and the first portion. The first portion is coupled to the second portion for shielding the first die from the second die.
Abstract:
Disclosed is an inductor or transformer for use in integrated circuit devices that includes a high - resistivity substrate. The inductor (1100) includes a plurality of conductive traces (1110, 1112, 1114) around the substrate forming a continuous conductive path from a first to a second port. The conductive path can be solenoid- shaped. Some of the conductive traces can be formed during back- end- of - line processing or backside plating of an integrated circuit die. The transformer includes a first inductor with input and output ports, and a first continuous conductive path therebetween; and a second inductor with input and output ports, and a second continuous conductive path therebetween. The second inductor is independent of and electromagnetically coupled to the first inductor. The first and second conductive paths can be solenoid- shaped. The first conductive path can be interleaved with the second conductive path.
Abstract:
A heterogeneous integrated circuit having at least one tier made of multiple technologies and a method of making the heterogeneous integrated circuit. The heterogeneous integrated circuit includes a package substrate, a first die of a first technology, and a second die of a second technology, where the two dies are located in the same tier. One die can surround the other die. The heterogeneous integrated circuit can also include a wire-bond and/or horizontal micro-bump coupling the two dies. The heterogeneous integrated circuit can also include a wire bond or vertical micro-bump coupling one of the dies to the package substrate. The vertical micro-bump coupling can include a through-via. The two technologies can be any of various technologies including CMOS, glass, sapphire and quartz. One die can also be adjacent to the other die on the same tier and the two dies coupled using a horizontal micro-bump.
Abstract:
Methods and devices related to a plurality of high breakdown voltage embedded capacitors are presented. A semiconductor device includes gate material (204) embedded in an insulator, (209) a plurality of metal contacts, (213) and a plurality of capacitors. (C1-C4) The plurality of capacitors includes a lower electrode, (217) a dielectric (219) formed so as to cover a surface of the lower electrode, and an upper electrode (221b, c) formed on the dielectric. Further, the plurality of contacts connects each of the lower electrodes of the plurality of capacitors to the gate material. The plurality of capacitors are connected in series via the gate material.
Abstract:
Method, system and computer program are provided for continually monitoring reliability of a digital system and for issuing a warning signal if digital system operation degrades to or past a specified threshold. The technique includes periodically determining a maximum frequency of operation of the digital system, and generating a warning signal indicative of a reliability degradation of the digital system if at least one of: (i) a measured or estimated maximum frequency of operation of the digital system is below a warning threshold frequency of operation of the digital system, wherein the warning threshold frequency is greater than or equal to a manufacturer specified minimum frequency of operation for the digital system; or (ii) a rate of change in the difference between measured maximum frequencies of operation of the digital system exceeds an acceptable rate of change threshold for the digital system.
Abstract:
Sub-100 nanometer semiconductor devices and methods and program products for manufacturing devices are provided, in particular inductors comprising a plurality of spaced parallel metal lines disposed on a dielectric surface and each having width, heights, spacing and cross-sectional areas determined as a function of Design Rule Check rules. For one planarization process rule a metal density ratio of 80% metal to 20% dielectric surface is determined and produced. In one example a sum of metal line spacing gaps is less than a sum of metal line interior sidewall heights. In one aspect at least one of line height, width and line spacing dimensions is selected to optimize one or more of chip yield, chip performance, chip manufacturability and inductor Q factor parameters.
Abstract:
Sub-100 nanometer semiconductor devices and methods and program products for manufacturing devices are provided, in particular inductors comprising a plurality of spaced parallel metal lines disposed on a dielectric surface and each having width, heights, spacing and cross-sectional areas determined as a function of Design Rule Check rules. For one planarization process rule a metal density ratio of 80% metal to 20% dielectric surface is determined and produced. In one example a sum of metal line spacing gaps is less than a sum of metal line interior sidewall heights. In one aspect at least one of line height, width and line spacing dimensions is selected to optimize one or more of chip yield, chip performance, chip manufacturability and inductor Q factor parameters.
Abstract:
Under the present invention, a wireless sensor network comprising a plurality of peer to peer nodes is provided. Each node in the network includes, among other things, a sensor for detecting environmental factors. When a potential failure is detected within a node, the node will query its neighboring nodes to determine whether they have the capability to store any data component(s) currently stored within the potentially failing node. Based on the querying, the data component(s) in the potentially failing node are copied to one or more of the neighboring nodes. Thereafter, details of the copying can be broadcast to other nodes in the network, and any routing tables that identify the locations of data components stored throughout the wireless sensor network can be updated.
Abstract:
Electromechanical systems dilation mode resonator (DMR) structures are disclosed. The DMR includes a first electrode layer, a second electrode layer, and a piezoelectric layer formed of a piezoelectric material. The piezoelectric layer has dimensions including a lateral distance (D), in a plane of an X axis and a Y axis perpendicular to the X axis, and a thickness (T), along a Z axis perpendicular to the X axis and the Y axis. A numerical ratio of the thickness and the lateral distance, T/D, is configured to provide a mode of vibration of the piezoelectric layer with displacement along the Z axis and along the plane of the X axis and the Y axis responsive to a signal provided to one or more of the electrodes. Ladder filter circuits can be constructed with DMRs as series and/or shunt elements, and the resonators can have spiral configurations.