公开(公告)号：WO2014169295A1

公开(公告)日：2014-10-16

申请号：PCT/US2014/034057

申请日：2014-04-14

Applicant: SOLEXEL, INC. ,  MOSLEHI, Mehrdad, M.

Inventor： MOSLEHI, Mehrdad, M.

IPC: H01L31/042 ,  H01L31/04

CPC classification number: H01L27/1421 ,  H01L31/02021 ,  H01L31/022441 ,  H01L31/044 ,  H01L31/048 ,  H01L31/0504 ,  H01L31/0516 ,  H01L31/1896 ,  H02J3/385 ,  H02S40/30 ,  H02S40/32 ,  Y02B10/10 ,  Y02E10/58

Abstract: A solar photovoltaic module laminate for electric power generation is provided. A plurality of solar cells are embedded within module laminate and arranged to form at least one string of electrically interconnected solar cells within said module laminate. A plurality of power optimizers are embedded within the module laminate and electrically interconnected to and powered with the plurality of solar cells. Each of the distributed power optimizers capable of operating in either pass-through mode without local maximum- power-point tracking (MPPT) or switching mode with local maximum-power- point tracking (MPPT) and having at least one associated bypass switch for distributed shade management.

Abstract translation: 提供了用于发电的太阳能光伏组件层压板。 多个太阳能电池被嵌入在模块层压板内并被布置成在所述模块层叠体内形成至少一排电互连的太阳能电池串。 多个功率优化器嵌入在模块层叠体内并且电互连到多个太阳能电池并由其供电。 每个分布式电源优化器能够以直通模式运行，而无需本地最大功率点跟踪（MPPT）或具有局部最大功率点跟踪（MPPT）的开关模式，并且具有至少一个相关的旁路开关用于分布式 阴影管理。

公开(公告)号：WO2012092537A2

公开(公告)日：2012-07-05

申请号：PCT/US2011/068037

申请日：2011-12-30

Applicant: SOLEXEL, INC. ,  MOSLEHI, Mehrdad M. ,  RANA, Virendra V. ,  ANBALAGAN, Pranav ,  SARASWAT, Vivek

Inventor： MOSLEHI, Mehrdad M. ,  RANA, Virendra V. ,  ANBALAGAN, Pranav ,  SARASWAT, Vivek

IPC: H01L31/042 ,  H01L31/18 ,  B23K26/36

CPC classification number: H01L31/02363 ,  B23K26/0624 ,  B23K26/40 ,  B23K2203/50 ,  H01L21/268 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: Various laser processing schemes are disclosed for producing various types of hetero- junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero- junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

Abstract translation: 公开了用于生产各种类型的异质结和同质结太阳能电池的各种激光加工方案。 这些方法包括基极和发射极接触开口，选择性掺杂，金属烧蚀，退火以改善钝化，以及通过激光加热铝来选择性发射极掺杂。 而且，公开了适用于异质结太阳能电池的选择性非晶硅烧蚀和选择性掺杂的激光加工方案。 公开了激光烧蚀技术，其使下面的硅基本上完好无损。 这些激光加工技术可应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯切片方法或经由外延沉积工艺或其他切割技术（例如离子注入和加热）制造的晶体硅衬底，其是 无论是平面的还是纹理的/三维的。 这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。

公开(公告)号：WO2011156657A2

公开(公告)日：2011-12-15

申请号：PCT/US2011/039877

申请日：2011-06-09

Applicant: SOLEXEL, INC. ,  KRAMER, Karl, Josef ,  ASHJAEE, Jay ,  MOSLEHI, Mehrdad, M. ,  KAMIAN, George, D. ,  MORDO, David ,  YONEHARA, Takao

Inventor： KRAMER, Karl, Josef ,  ASHJAEE, Jay ,  MOSLEHI, Mehrdad, M. ,  KAMIAN, George, D. ,  MORDO, David ,  YONEHARA, Takao

IPC: H01L21/205 ,  H01L21/20

CPC classification number: H01L21/67754 ,  C23C16/45585 ,  C23C16/481 ,  C23C16/54 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/6719 ,  H01L21/67757

Abstract: High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer.

Abstract translation: 提供了高生产率薄膜沉积方法和工具，其中厚度在小于1微米至100微米范围内的薄膜半导体材料层沉积在反应器中的多个晶片上。 将晶片装载在分批基座上，批量基座位于反应器中，使得在基座和反应器的内壁之间产生锥形气体流动空间。 然后将反应性气体引导到锥形气体空间中并遍及每个晶片，从而改善每个晶片和从晶片到晶片的沉积均匀性。

公开(公告)号：WO2011072153A3

公开(公告)日：2011-11-17

申请号：PCT/US2010059748

申请日：2010-12-09

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Back contact back junction three dimensional solar cell and methods for manufacturing are provided. The back contact back contact back junction three dimensional solar cell comprises a three-dimensional substrate. The substrate comprises a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer is positioned on the doped backside emitter region. Backside emitter contacts and backside base contacts connected to metal interconnects and selectively formed on three-dimensional features of the backside of three-dimensional solar cell.

Abstract translation: 提供背面接头三维太阳能电池及制造方法。 背面接触背面接合三维太阳能电池包括三维基板。 衬底包括具有钝化层的光捕获前侧表面，掺杂的基极区域和与掺杂的基极区域极性相反的掺杂的背侧发射极区域。 背面钝化层位于掺杂背侧发射极区域上。 连接到金属互连的背面发射极触点和背面底部触点，并且选择性地形成在三维太阳能电池的背面的三维特征上。

公开(公告)号：WO2011100647A3

公开(公告)日：2011-08-18

申请号：PCT/US2011/024670

申请日：2011-02-12

Applicant: SOLEXEL, INC. ,  MOSLEHI, Mehrdad, M. ,  KRAMER, Karl-josef ,  WANG, David, Xuan-qi ,  KAPUR, Pawan ,  NAG, Somnath ,  KAMIAN, George ,  ASHJAEE, Jay ,  YONEHARA, Takao

Inventor： MOSLEHI, Mehrdad, M. ,  KRAMER, Karl-josef ,  WANG, David, Xuan-qi ,  KAPUR, Pawan ,  NAG, Somnath ,  KAMIAN, George ,  ASHJAEE, Jay ,  YONEHARA, Takao

IPC: H01L31/042 ,  H01L31/18 ,  H01L21/306 ,  H01L21/20

Abstract: This disclosure presents manufacturing methods and apparatus designs for making TFSSs from both sides of a re -usable semiconductor template, thus effectively increasing the substrate manufacturing throughput and reducing the substrate manufacturing cost. This approach also reduces the amortized starting template cost per manufactured substrate (TFSS) by about a factor of 2 for a given number of template reuse cycles.

公开(公告)号：WO2010138976A1

公开(公告)日：2010-12-02

申请号：PCT/US2010/036975

申请日：2010-06-01

Applicant: SOLEXEL, INC. ,  MOSLEHI, Mehrdad, M. ,  WANG, David, Xuan-qi

Inventor： MOSLEHI, Mehrdad, M. ,  WANG, David, Xuan-qi

IPC: H01L21/00 ,  H01L21/306 ,  H01L29/04

CPC classification number: H01L31/0352 ,  H01L21/00 ,  H01L27/142 ,  H01L31/022458 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/0468 ,  H01L31/054 ,  H01L31/056 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for the fabrication of a three-dimensional thin-film semiconductor substrate with selective through-holes is provided. A porous semiconductor layer is conformally formed on a semiconductor template comprising a plurality of three-dimensional inverted pyramidal surface features defined by top surface areas aligned along a (100) crystallographic orientation plane of the semiconductor template and a plurality of inverted pyramidal cavities defined by sidewalls aligned along the (111) crystallographic orientation plane of the semiconductor template. An epitaxial semiconductor layer is conformally formed on the porous semiconductor layer. The epitaxial semiconductor layer is released from the semiconductor template. Through-holes are selectively formed in the epitaxial semiconductor layer with openings between the front and back lateral surface planes of the epitaxial semiconductor layer to form a partially transparent three-dimensional thin-film semiconductor substrate.

Abstract translation: 提供了一种制造具有选择性通孔的三维薄膜半导体衬底的方法。 多孔半导体层保形地形成在半导体模板上，该半导体模板包括由半导体模板的（100）晶体取向平面对准的顶表面区域和由侧壁限定的多个反向锥体腔限定的多个三维倒锥体表面特征 沿着半导体模板的（111）晶体取向平面排列。 在多孔半导体层上共形形成外延半导体层。 外延半导体层从半导体模板释放。 在外延半导体层中选择性地形成通孔，该外延半导体层在外延半导体层的正面和背面侧面之间具有开口，形成部分透明的三维薄膜半导体衬底。

公开(公告)号：WO2010057060A3

公开(公告)日：2010-05-20

申请号：PCT/US2009/064484

申请日：2009-11-13

Applicant: SOLEXEL, INC. ,  WANG, David, Xuan-Qi ,  MOSLEHI, Mehrdad, M.

Inventor： WANG, David, Xuan-Qi ,  MOSLEHI, Mehrdad, M.

IPC: H01L31/0368

Abstract: Methods and systems for manufacturing thin-film solar cells utilizing a template having inverted pyramidal cavities defined by a plurality of walls aligned along a (111) crystallographic orientation plane and methods for manufacturing the template. Methods and systems for manufacturing thin-film solar cells utilizing a 3-D TFSS having a plurality of ridges on the surface of the semiconductor substrate defining a base opening of an inverted pyramidal cavity and walls defining an inverted pyramidal cavity and methods for manufacturing the 3-D TFSS. A 3-D TFSC comprising a semiconductor substrate with an inverted pyramidal cavity, emitter metallization regions on ridges on the surface of the semiconductor substrate which define an opening of the inverted pyramidal cavity, and base metallization regions on a region which form the apex of the inverted pyramidal cavity and methods for manufacturing the 3-D TFSC.

公开(公告)号：WO2010057060A2

公开(公告)日：2010-05-20

申请号：PCT/US2009064484

申请日：2009-11-13

Applicant: SOLEXEL INC ,  WANG DAVID XUAN-QI ,  MOSLEHI MEHRDAD M

Inventor： WANG DAVID XUAN-QI ,  MOSLEHI MEHRDAD M

IPC: H01L29/04 ,  H01L21/306

CPC classification number: H01L31/0236 ,  H01L21/3065 ,  H01L29/045 ,  H01L29/0657 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/056 ,  H01L31/068 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T117/1092

Abstract: Methods and systems for manufacturing thin-film solar cells utilizing a template having inverted pyramidal cavities defined by a plurality of walls aligned along a (111) crystallographic orientation plane and methods for manufacturing the template. Methods and systems for manufacturing thin-film solar cells utilizing a 3-D TFSS having a plurality of ridges on the surface of the semiconductor substrate defining a base opening of an inverted pyramidal cavity and walls defining an inverted pyramidal cavity and methods for manufacturing the 3-D TFSS. A 3-D TFSC comprising a semiconductor substrate with an inverted pyramidal cavity, emitter metallization regions on ridges on the surface of the semiconductor substrate which define an opening of the inverted pyramidal cavity, and base metallization regions on a region which form the apex of the inverted pyramidal cavity and methods for manufacturing the 3-D TFSC.

Abstract translation: 利用具有由沿（111）晶体取向平面排列的多个壁限定的倒金字塔形腔的模板和用于制造模板的方法来制造薄膜太阳能电池的方法和系统。 利用三维TFSS制造薄膜太阳能电池的方法和系统，所述三维TFSS在半导体衬底的表面上具有多个脊，限定倒金字塔形腔的基底开口，并且所述壁限定倒金字塔形腔，以及用于制造3 -D TFSS。 一种三维TFSC，包括具有倒金字塔形腔体的半导体衬底，在所述半导体衬底的表面上的限定所述倒金字塔形腔的开口的脊上的发射极金属化区域以及形成所述倒金字塔形顶点的区域上的基底金属化区域 倒金字塔腔和用于制造3-D TFSC的方法。

公开(公告)号：WO2009026240A8

公开(公告)日：2009-02-26

申请号：PCT/US2008/073499

申请日：2008-08-18

Applicant: SOLEXEL, INC. ,  WANG, David, Xuan-Qi ,  MOSLEHI, Mehrdad, M. ,  NAG, Somnath

Inventor： WANG, David, Xuan-Qi ,  MOSLEHI, Mehrdad, M. ,  NAG, Somnath

IPC: B05D1/36 ,  B05D5/00 ,  H01L21/00

Abstract: Methods here disclosed provide for selectively coating the top surfaces or ridges of a 3-D substrate while avoiding liquid coating material wicking into micro cavities on 3-D substrates. The substrate includes holes formed in a three-dimensional substrate by forming a sacrificial layer on a template. The template includes a template substrate with posts and trenches between the posts. The steps include subsequently depositing a semiconductor layer and selectively etching the sacrificial layer. Then, the steps include releasing the semiconductor layer from the template and coating the 3-D substrate using a liquid transfer coating step for applying a liquid coating material to a surface of the 3-D substrate. The method may further include coating the 3-D substrate by selectively coating the top ridges or surfaces of the substrate. Additional features may include filling the micro cavities of the substrate with a filling material, removing the filling material to expose only the substrate surfaces to be coated, coating the substrate with a layer of liquid coating material, and removing said filling material from the micro cavities of the substrate.

公开(公告)号：WO2008070266A2

公开(公告)日：2008-06-12

申请号：PCT/US2007080655

申请日：2007-10-07

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD

Inventor： MOSLEHI MEHRDAD

IPC: H01L29/06 ,  H01L21/302

CPC classification number: H01L31/00 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/03529 ,  H01L31/056 ,  H01L31/068 ,  H01L31/182 ,  H01L31/1896 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: Methods for manufacturing three-dimensional thin- film solar cells 100, using a template. The template comprises a template substrate comprising a plurality of posts and a plurality of trenches between said plurality of posts. The three-dimensional thin-film solar cell substrate is formed by forming a sacrificial layer on the template, subsequently depositing a semiconductor layer, selectively etching the sacrificial layer, and releasing the semiconductor layer from the template. The resulting three-dimensional thin-film solar cell substrate may comprise a plurality of single-aperture unit cells or dual-aperture unit cells. Select portions of the three-dimensional thin-film solar cell substrate are then doped with a first dopant, while other select portions are doped with a second dopant. Next, emitter 525 and base metallization regions 532 are formed.

Abstract translation: 使用模板制造三维薄膜太阳能电池100的方法。 模板包括模板衬底，其包括多个柱和在所述多个柱之间的多个沟槽。 通过在模板上形成牺牲层，然后沉积半导体层，选择性地蚀刻牺牲层，以及从模板中释放半导体层，形成三维薄膜太阳能电池基板。 所得到的三维薄膜太阳能电池基板可以包括多个单孔单元电池或双孔单元电池。 然后，三维薄膜太阳能电池基板的选择部分掺杂有第一掺杂剂，而其它选择部分掺杂有第二掺杂剂。 接下来，形成发射极525和基底金属化区域532。