APPARATUS, SYSTEM AND METHOD FOR REAL-TIME WAFER TEMPERATUREMEASUREMENT BASED ON LIGHT SCATTERING

    公开(公告)号:CA2136886C

    公开(公告)日:2007-07-10

    申请号:CA2136886

    申请日:1994-11-29

    Abstract: A sensor for measuring semiconductor wafer temperature in semiconductor processing equipment, comprising a first laser to provide a first laser beam at a first wavelength and a second laser to provide a second laser beam at a second wavelength. The sensor also includes laser driver and oscillator to modulate the wavelength of the first and second laser beams as the laser beams are directed to and reflected from the wafer, and detector module to measure the change in specular reflectance of the wafer resulting from the modulation of the wavelength of the first and second laser beams. The sensor system also includes signal processing circuitry to determine rms surface roughness of wafer at a known reference temperature from the change in reflectance of wafer resulting from modulation of the wavelengths of the first and second laser beams, and to determine the temperature of wafer from the change in specular reflectance of wafer resulting from modulation of the wavelengths of the first and second laser beams while wafer is at an unknown temperature and the surface roughness of the wafer at the known temperature.

    APPARATUS, SYSTEM AND METHOD FOR REAL-TIME WAFER TEMPERATURE MEASUREMENT BASED ON LIGHT SCATTERING

    公开(公告)号:CA2136886A1

    公开(公告)日:1995-05-31

    申请号:CA2136886

    申请日:1994-11-29

    Abstract: A sensor (100) for measuring semiconductor wafer (10) temperature in semiconductor processing equipment (30), comprising a first laser (104) to provide a first laser beam at a first wavelength and a second laser (106) to provide a second laser beam at a second wavelength. The sensor also includes laser driver (108) and oscillator (110) to modulate the wavelength of the first and second laser beams as the laser beams are directed to and reflected from the wafer (10), and detector module (130) to measure the change in specular reflectance of the wafer (10) resulting from the modulation of the wavelength of the first and second laser beams. The sensor system also includes signal processing circuitry (138) to determine rms surface roughness of wafer (10) at a known reference temperature from the change in reflectance of wafer (10) resulting from modulation of the wavelengths of the first and second laser beams, and to determine the temperature of wafer (10) from the change in specular reflectance of wafer (10) resulting from modulation of the wavelengths of the first and second laser beams while wafer (10) is at an unknown temperature and the surface roughness of the wafer at the known temperature.

    LAMINATED BACKPLANE FOR SOLAR CELLS
    6.
    发明申请
    LAMINATED BACKPLANE FOR SOLAR CELLS 审中-公开
    用于太阳能电池的层压背板

    公开(公告)号:WO2015017592A3

    公开(公告)日:2015-03-26

    申请号:PCT/US2014048989

    申请日:2014-07-30

    CPC classification number: H01L31/0682 H01L31/02167 H01L31/022441 Y02E10/547

    Abstract: A back contact solar cell structure having a light receiving frontside and a metallized backside of on-cell patterned base and emitter metallization electrically connected to base and emitter regions on a back contact solar cell semiconductor substrate. A backplane laminate layer made of resin and fibers and having a coefficient of thermal expansion relatively matched to the back contact solar cell semiconductor substrate is attached to the on-cell base and emitter metallization and to portions of the back contact solar cell semiconductor substrate not covered by the on-cell base and emitter metallization.

    Abstract translation: 一种背接触太阳能电池结构,其具有光接收前侧和金属化的背侧上的电池上图案化的基极和发射极金属化部,其电连接到背接触太阳能电池半导体基板上的基极和发射极区。 将由树脂和纤维制成并且具有与背接触太阳能电池半导体衬底相对匹配的热膨胀系数的背板层压板层附接到on-cell基极和发射极金属化部,并且将背接触太阳能电池半导体衬底的部分未覆盖 通过on-cell基极和发射极金属化。

    MONOLITHIC SOLAR CELL ARRAYS AND FABRICATION METHODS
    7.
    发明申请
    MONOLITHIC SOLAR CELL ARRAYS AND FABRICATION METHODS 审中-公开
    单晶太阳能电池阵列和制造方法

    公开(公告)号:WO2015031912A1

    公开(公告)日:2015-03-05

    申请号:PCT/US2014/053759

    申请日:2014-09-02

    Abstract: Solar cell array solutions including monolithic solar cell arrays and fabrication methods. A first patterned cell metallization contacts base and emitter regions of each of a plurality of solar cells having a light receiving frontside and a backside. An electrically insulating continuous backplane layer is attached to the backside of the solar cells and covers the first cell metallization of each of the solar cells. Via holes through the continuous backplane layer provide access to the first cell metallization. A second cell metallization is connected to the first cell metallization of each of the solar cells and electrically interconnects the solar cells in the array.

    Abstract translation: 太阳能电池阵列解决方案,包括单片太阳能电池阵列和制造方法。 第一图案化电池金属化接触具有光接收前侧和后侧的多个太阳能电池中的每一个的基极和发射极区域。 电绝缘的连续背板层连接到太阳能电池的背面并且覆盖每个太阳能电池的第一电池金属化。 穿过连续背板层的通孔提供对第一电池金属化的访问。 第二电池金属化连接到每个太阳能电池的第一电池金属化,并将阵列中的太阳能电池电互连。

    SMART PHOTOVOLTAIC CELLS AND MODULES
    9.
    发明申请
    SMART PHOTOVOLTAIC CELLS AND MODULES 审中-公开
    SMART光伏电池和模块

    公开(公告)号:WO2013075144A1

    公开(公告)日:2013-05-23

    申请号:PCT/US2012/066150

    申请日:2012-11-20

    Abstract: A back contact solar cell with on-cell electronics is provided. The back contact solar cell is comprised of a semiconductor substrate having a light capturing front side and a backside opposite the light capturing front side. A first interdigitated metallization pattern is positioned on the backside of the semiconductor substrate and a backplane supports and is attached to the backside of the semiconductor substrate. A second interdigitated metallization pattern positioned on the backplane and is connected to the first interdigitated metallization pattern. An on-cell electronic component is attached to the second interdigitated metallization pattern and electrical leads connect the on-cell electronic component to the second interdigitated metallization pattern.

    Abstract translation: 提供带有电池电子元件的背接触太阳能电池。 背接触太阳能电池由具有光捕获前侧和与光捕获正面相反的背面的半导体基板组成。 第一交叉金属化图案位于半导体衬底的背面,并且背板支撑并附着到半导体衬底的背面。 位于背板上的第二叉指金属化图案,并连接到第一叉指金属化图案。 电池单元电子元件附接到第二叉指金属化图案,并且电引线将电池单元电子元件连接到第二叉指金属化图案。

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