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公开(公告)号：US6071633A
公开(公告)日：2000-06-06
申请号：US901403
申请日：1997-07-28
Applicant: Michael D Potter
Inventor： Michael D Potter
CPC classification number: C09K11/7702 , C09K11/672 , C09K11/682 , C09K11/693 , C09K11/7708 , H01J9/227
Abstract: A phosphor comprises, in atomic percentages, 90% to 100% of a mixed metal oxide MxTyOz, wherein M is a metal selected from Zn, Sn, In, Cu, and combinations thereof, T is a refractory metal selected from Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, and combinations thereof, and O is Oxygen, x, y, and z being chosen such that z is at most stoichiometric for MxTyOz; and 0% to 10% of a dopant comprising a substance selected from a rare earth element of the lanthanide series, Mn, Cr, and combinations thereof, or stoichiometrically excess zinc, copper, tin, or indium. Cathodoluminescent phosphor compositions stimulable by electrons of very low energy are prepared from metal oxides treated with refractory metals in various processes disclosed. Metal oxides or mixed-metal oxides of zinc, copper, tin, or indium are heated in the presence of a refractory metal such as titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, or combinations or alloys thereof to make phosphors of various chromaticities. In a simple embodiment, a quantity of Ta.sub.2 O.sub.5 is added to a quantity of ZnO and heated at an effective temperature and time to form Ta.sub.2 Zn.sub.3 O,, which is useful in various forms as a blue-light-emitting phosphor. In preferred embodiments, the phosphors are prepared in situ in an electrically-conductive thin-film or surface-layer form during fabrication of displays.
Abstract translation: 磷光体以原子百分比包含90％至100％的混合金属氧化物M x T y O z，其中M是选自Zn，Sn，In，Cu及其组合的金属，T是选自Ti，Zr， Hf，V，Nb，Ta，Cr，Mo，W及其组合，O是氧，x，y和z，使得z对于M x T y O z为至多化学计量; 以及含有选自镧系元素稀土元素，Mn，Cr及其组合的化合物或化学计量过量的锌，铜，锡或铟的物质的0〜10％的掺杂剂。 由非常低能量的电子刺激的阴极发光荧光体组合物由公开的各种方法由用难熔金属处理的金属氧化物制备。 锌，铜，锡或铟的金属氧化物或混合金属氧化物在钛，锆，铪，钒，铌，钽，铬，钼，钨等难熔金属的存在下被加热，或其组合或合金 以制造各种色度的荧光体。 在一个简单的实施例中，将一定数量的Ta 2 O 5添加到一定量的ZnO中并在有效温度和时间加热以形成Ta 2 Zn 3 O 3，其可用作各种形式作为蓝色发光荧光体。 在优选的实施方案中，在制造显示器期间，以导电薄膜或表面层形式原位制备荧光体。
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公开(公告)号：US6004830A
公开(公告)日：1999-12-21
申请号：US276198
申请日：1999-03-25
Applicant: Michael D. Potter
Inventor： Michael D. Potter
IPC: H01J3/02 , H01J9/02 , H01L21/100 , H01L20/100
Abstract: A lateral-emitter field emission device has a gate that is separated by an insulating layer from a vacuum- or gas-filled environment containing other elements of the device. For example, the gate may be disposed external to the microchamber. The insulating layer is disposed such that there is no vacuum- or gas-filled path to the gate for electrons that are emitted from a lateral emitter. The insulating layer disposed between the emitter and the gate preferably comprises a material having a dielectric constant greater than one. The insulating layer also preferably has a low secondary electron yield over the device's operative range of electron energies. For display applications, the insulating layer is preferably transparent. Emitted electrons are confined to the microchamber containing their emitter. Thus, the gate current component of the emitter current consists of displacement current only. This displacement current is a result of any change in potential of the gate relative to other elements such as, for example, relative to the emitter. Direct electron current from the emitter to the gate is prevented. An array of the devices comprises an array of microchambers, so that electron current from each emitter can reach only the anode in the same microchamber, even for diode devices lacking a control electrode. A fabrication process is specially adapted for fabricating the device and arrays of such devices.
Abstract translation: 横向发射极场致发射器件具有由绝缘层与包含器件的其它元件的真空或充满气体的环境隔开的栅极。 例如，门可以设置在微室外部。 绝缘层被布置成使得从侧向发射器发射的电子没有真空或气体填充到栅极的路径。 设置在发射极和栅极之间的绝缘层优选地包括具有大于1的介电常数的材料。 绝缘层还优选在器件的电子能量的操作范围内具有低的二次电子产率。 对于显示应用，绝缘层优选是透明的。 发射电子被限制在含有发射极的微室中。 因此，发射极电流的栅极电流分量仅由位移电流组成。 该位移电流是栅极相对于其它元件（例如相对于发射极）的电位的任何变化的结果。 防止从发射极到栅极的直接电子电流。 这些器件的阵列包括微阵列阵列，使得即使对于没有控制电极的二极管器件，来自每个发射极的电子电流也可以仅到达同一微室中的阳极。 制造工艺特别适用于制造这种装置的装置和阵列。
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公开(公告)号：US5831384A
公开(公告)日：1998-11-03
申请号：US550391
申请日：1995-10-30
Applicant: Michael D. Potter
Inventor： Michael D. Potter
Abstract: A microelectronic light-emitting device (10) is made with dual lateral thin-film emitters (35 and 40) substantially parallel to a substrate (20). Emitter electrodes (35 and 40) have a thickness of not more than several hundred angstroms. Each emitter has an emitting blade edge (110 or 115) having a small radius of curvature. Thus, opposed emitters for two opposite-sign carriers are provided, shaped to provide very high electric field intensity at their emitting tips. A region containing phosphor (50) extends between the two emitters and contacts them. When a suitable bias voltage is applied, electrons are injected into the phosphor from the blade edge of one emitter and holes are injected from the other emitter. The sum of diffusion lengths of the carriers (including secondary carriers) is equal to or greater than the shortest distance between the emitters. DC, AC, pulsed, or other voltage waveforms can be applied. Light emission is excited from the phosphor by carrier recombination. Devices may be combined in a matrix display array, and/or combined to form a super-pixel, and/or combined to form segments of a character display.
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公开(公告)号：US5829152A
公开(公告)日：1998-11-03
申请号：US849253
申请日：1997-01-29
Applicant: Michael D. Potter , Kathleen M. Dever
Inventor： Michael D. Potter , Kathleen M. Dever
CPC classification number: B25H7/04 , G01B3/1084 , G01B3/56 , G01B2003/1046 , G01B2003/1064 , G01B2003/1089
Abstract: An integrated system for measuring and marking on a surface (110) has a housing (15, 80), a measuring element (40) at least partially contained within the housing, and a marking element (60) for marking the surface. The system is characterized in that the marking element is initially retained within the housing (80) and is maintained in a spaced-apart relationship to the surface until a user moves the housing in a predetermined direction relative to the surface, whereupon the surface is marked at the measured point. The predetermined direction is preferably perpendicular toward the surface, and the marking element preferably operates through an aperture (70) in the bottom surface of the housing. Various embodiments have features including a cursor (30) aligned with which the marking element, a modular removable and replaceable marking element (60), and either a linear measuring tape or an arcuate angle-measuring element (40).
Abstract translation: PCT No.PCT / US96 / 13385 Sec。 371日期1997年1月29日 102（e）日期1997年1月29日PCT 1996年8月16日PCT公布。 第WO97 / 14541号公报 日期1997年4月24日用于在表面（110）上测量和标记的集成系统具有壳体（15,80），至少部分地容纳在壳体内的测量元件（40）和用于标记 表面。 该系统的特征在于，标记元件最初保持在壳体（80）内并且保持与表面间隔开的关系，直到用户相对于表面沿预定方向移动壳体，于是表面被标记 在测量点。 预定方向优选地朝向表面垂直，并且标记元件优选地通过壳体的底表面中的孔（70）操作。 各种实施例具有包括与标记元件对准的光标（30），模块化可移除和可更换标记元件（60）以及线性测量带或弓形角度测量元件（40）的特征。
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公开(公告)号：US5811929A
公开(公告)日：1998-09-22
申请号：US458137
申请日：1995-06-02
Applicant: Michael D. Potter
Inventor： Michael D. Potter
CPC classification number: H01J3/022 , H01J2201/30423
Abstract: A field emission device (10) is made with a lateral emitter (100) substantially parallel to a substrate (20) and with a simplified anode structure (70). The lateral-emitter field-emission device has a thin-film emitter cathode (100) which has a thickness not exceeding several hundred angstroms and has an emitting blade edge or tip (110) having a small radius of curvature. The anode's top surface is precisely spaced apart from and below the plane of the lateral emitter and receives electrons emitted by field emission from the blade edge or tip of the lateral-emitter cathode, when a suitable bias voltage is applied. The device may be configured as a diode, or as a triode, tetrode, etc. having one or more control electrodes (140) positioned to allow control of current from the emitter to the anode by an electrical signal applied to the control electrode. In a particularly simple embodiment, a single control electrode (140) is positioned in a plane above or below the emitter edge or tip (110) and automatically aligned to that edge. The simplified devices are specially adapted for use in arrays, including field emission display arrays.
Abstract translation: 场致发射器件（10）由基本上平行于衬底（20）的侧向发射器（100）和简化的阳极结构（70）制成。 横向发射极场致发射器件具有薄膜发射极阴极（100），其厚度不超过几百埃，并且具有小的曲率半径的发射叶片边缘或尖端（110）。 当施加适当的偏置电压时，阳极的顶表面与侧向发射器的平面精确地间隔开并且在侧向发射极的平面之下并且接收从侧向发射极阴极的叶片边缘或尖端的场发射发射的电子。 该器件可以被配置为具有一个或多个控制电极（140）的二极管或三极管，四极管等，以便通过施加到控制电极的电信号来控制从发射极到阳极的电流。 在特别简单的实施例中，单个控制电极（140）被定位在发射器边缘或尖端（110）的上方或下方的平面中，并自动对准该边缘。 简化的器件特别适用于阵列，包括场发射显示阵列。
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Patent Agency Ranking
公开(公告)号：US5703380A
公开(公告)日：1997-12-30
申请号：US490061
申请日：1995-06-13
Applicant: Michael D. Potter
Inventor： Michael D. Potter
CPC classification number: H01J9/025
Abstract: A lateral-emitter electron field emission device structure incorporates a thin film laminar composite emitter structure including two or more films composed of materials having different etch rates when etched by an etchant. In its simplest form, the laminar composite emitter consists of two ultra-thin layers, etched differentially so that a salient remaining portion of the more etch-resistant layer protrudes beyond the less etch-resistant layer to form a small-radius tip. In a preferred form of the laminar composite emitter, it is a multi-layer laminar emitter, of which the most etch-resistant layer is doped-diamond. The diamond layer is doped using one or more N-type dopants. In this preferred emitter structure, the edge of the thin film diamond layer is the dominant electron emitter with a very low (nearly zero) work function. Hence the new device can operate at applied voltages substantially lower than in prior art. The laminar structure may be a sandwich structure with three layers. Upper and/or lower supporting metallic layers act as both physical supporting material and as an integral electrical conducting medium. This allows the diamond layer to be very thin, on the order of tens of angstroms (i.e. less than 100 angstroms). The laminar composite emitter is specially adapted to fabrication by a method using semiconductor integrated circuit fabrication processes.
Abstract translation: 横向发射极电子场发射器件结构包括薄膜层状复合发射器结构，其包括由蚀刻剂蚀刻时具有不同蚀刻速率的材料构成的两个或更多个膜。 在其最简单的形式中，层状复合发射器由两个超薄层组成，其被差别地蚀刻，使得更耐蚀刻层的显着的剩余部分突出超过较少的耐蚀刻层以形成小半径的尖端。 在层状复合发射器的优选形式中，它是多层层流发射器，其最耐蚀刻层是掺杂金刚石的。 使用一种或多种N型掺杂剂掺杂金刚石层。 在这个优选的发射极结构中，薄膜金刚石层的边缘是主要的电子发射极，具有非常低（几乎为零）的功函数。 因此，新器件可以在大大低于现有技术的施加电压下工作。 层状结构可以是具有三层的夹层结构。 上和/或下支撑金属层充当物理支撑材料和作为整体导电介质。 这允许金刚石层非常薄，几十埃的数量级（即小于100埃）。 层状复合发射器特别适用于通过使用半导体集成电路制造工艺的方法制造。
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公开(公告)号：US5700176A
公开(公告)日：1997-12-23
申请号：US735042
申请日：1996-10-22
Applicant: Michael D. Potter
Inventor： Michael D. Potter
CPC classification number: H01J9/025 , H01J3/022 , H01J2201/30423 , H01J2209/385
Abstract: A fabrication process is disclosed using process steps (S1-S18) similar to those of semiconductor integrated circuit fabrication to produce lateral-emitter field-emission devices and their arrays. In a preferred fabrication process for the simplified anode device, the following steps are performed: an anode film (70) is deposited; an insulator film (90) is deposited over the anode film; an ultra-thin conductive emitter film (100) is deposited over the insulator and patterned; a trench opening (160) is etched through the emitter and insulator, stopping at the anode film, thus forming and automatically aligning an emitting edge of the emitter; and means are provided for applying an electrical bias to the emitter and anode, sufficient to cause field emission of electrons from the emitting edge of the emitter to the anode. The anode film may comprise a phosphor (75) for a device specially adapted for use in a field emission display. The fabrication process may also include steps to deposit additional insulator films (130) and to deposit additional conductive films for control electrodes (140), which are automatically aligned with the emitter blade edge or tip (110). A fabrication process for forming an evacuated or gas-filled sealed chamber in a substrate is disclosed.
Abstract translation: 使用与半导体集成电路制造类似的工艺步骤（S1-S18）来公开制造横向射极场致发射器件及其阵列的制造工艺。 在简化阳极器件的优选制造工艺中，执行以下步骤：沉积阳极膜（70）; 绝缘膜（90）沉积在阳极膜上; 在绝缘体上沉积超薄导电发射极膜（100）并图案化; 通过发射极和绝缘体蚀刻沟槽开口（160），停止在阳极膜处，从而形成并自动对准发射极的发射边缘; 并且提供用于将电偏压施加到发射极和阳极的装置，足以引起电子从发射极的发射边到阳极的场发射。 阳极膜可以包括用于特别适用于场致发射显示器的器件的荧光体（75）。 制造工艺还可以包括沉积额外的绝缘膜（130）并且沉积用于控制电极（140）的附加导电膜的步骤，所述导电膜自动地与发射器叶片边缘或尖端（110）对齐。 公开了一种用于在衬底中形成抽真空或充气密封腔的制造工艺。
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公开(公告)号：US5669802A
公开(公告)日：1997-09-23
申请号：US549929
申请日：1995-10-30
Applicant: Michael D. Potter
Inventor： Michael D. Potter
Abstract: A microelectronic light-emitting device (10) is made with dual lateral thin-film emitters (35 and 40) substantially parallel to a substrate (20). A region containing phosphor (50) extends between the two emitters and contacts them. A fabrication process is specially adapted to produce the light-emitting devices and/or arrays of light-emitting devices. The process allows the use of conductive or insulating base or starting substrates. In a preferred process, these steps are performed: an insulating substrate is provided; an ultra-thin conductive emitter film is deposited over the insulating substrate and patterned; an insulating layer is deposited over the emitter film; conductive contacts are made through the insulating layer to the emitter film; a trench opening is etched through the insulating layer and emitter film, thus forming and automatically aligning two emitting edges of two emitters; a phosphor is deposited into the trench opening and optionally planarized; and means are provided for applying an electrical bias to the two emitter contacts, sufficient to cause injection of carriers from the emitting edges of the emitters into the phosphor.
Abstract translation: 微电子发光器件（10）由基本上平行于衬底（20）的双重横向薄膜发射器（35和40）制成。 含有荧光体（50）的区域在两个发射体之间延伸并与它们接触。 制造工艺特别适于产生发光器件和/或发光器件阵列。 该方法允许使用导电或绝缘基底或起始基底。 在优选的方法中，执行这些步骤：提供绝缘基板; 在绝缘基板上沉积超薄导电发射极膜并图案化; 绝缘层沉积在发射极膜上; 导电接触通过绝缘层制成发射极膜; 通过绝缘层和发射极膜蚀刻沟槽开口，从而形成并自动对准两个发射器的两个发射边缘; 磷光体沉积到沟槽开口中并任选地平坦化; 并且提供用于将电偏压施加到两个发射极触点的装置，足以使载流子从发射体的发射边缘注入到荧光体中。
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29.发明授权Lateral field emission devices for display elements and methods of fabrication 失效用于显示元件的横向场致发射器件和制造方法
公开(公告)号：US5629580A
公开(公告)日：1997-05-13
申请号：US331307
申请日：1994-10-28
Applicant: Jack A. Mandelman , Michael D. Potter
Inventor： Jack A. Mandelman , Michael D. Potter
CPC classification number: H01J3/022 , H01J2201/30423
Abstract: Lateral field emission devices ("FEDs") for display elements and methods of fabrication are set forth. The FED includes a thin-film emitter oriented parallel to, and disposed above, a substrate. The FED further includes a columnar shaped anode having a first lateral surface. A phosphor layer is disposed adjacent to the first lateral surface. Specifically, the anode is oriented such that the lateral surface and adjacent phosphor layer are perpendicular to the substrate. The emitter has a tip which is spaced less than the mean free distance of an electron in air from the phosphor layer. Operationally, when a voltage potential is applied between said anode and said emitter, electrons are emitted from the tip of the emitter into the phosphor layer causing the phosphor layer to emit electromagnetic energy. Further specific details of the field emission device, fabrication method, method of operation, and associated display are set forth.
Abstract translation: 阐述了用于显示元件和制造方法的侧面场致发射器件（“FED”）。 FED包括平行于并设置在基板上方的薄膜发射极。 FED还包括具有第一侧表面的柱状阳极。 磷光体层邻近第一侧面设置。 具体地，阳极被定向成使得侧表面和相邻磷光体层垂直于衬底。 发射器具有一个尖端，该尖端的距离小于空气中的电子与荧光体层的平均自由距离。 在工作上，当在所述阳极和所述发射极之间施加电压电位时，电子从发射极的尖端发射到荧光体层中，从而使荧光层发射电磁能。 阐述了场致发射装置，制造方法，操作方法和相关显示器的进一步具体细节。
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公开(公告)号：US5628663A
公开(公告)日：1997-05-13
申请号：US524171
申请日：1995-09-06
Applicant: Michael D. Potter
Inventor： Michael D. Potter
Abstract: An improved high-frequency field-emission microelectronic device (10) has a substrate (20) and an ultra-thin emitter electrode (30) extending parallel to the substrate and having an electron-emitting lateral edge (110) facing an anode (40) across an emitter-to-anode gap (120). A control electrode (70), having a lateral dimension only a minor fraction of the emitter-to-anode gap width, is disposed parallel to the emitter and spaced apart from the emitter by an insulator (60) of predetermined thickness. A vertical dimension of the control electrode is only a minor fraction of the height of the anode. The control electrode may substantially surround a portion of the anode, spaced from the anode in concentric relationship. Inter-electrode capacitance between the emitter and the control electrode has only an extremely small value, consisting of only a very small area term and a very small fringing-field term, thus allowing operation of the microelectronic device at higher frequencies or switching speeds than heretofore. Inter-electrode capacitance between the control electrode and the anode also has only an extremely small value, thus improving higher frequency performance further. Devices having a plurality of control electrodes may also be made with improved inter-electrode capacitance. In order to consistently realize improved performance, a fabrication process (S1-S18) is specially adapted for manufacturing the device with small and precise dimensions and suitably precise alignment. The specially adapted process uses two sacrificial materials (150 and 160), one of which forms a temporary mandrel, and uses a conformal conductive layer to form each control electrode while automatically achieving the required alignment precision.
Abstract translation: 改进的高频场致发射微电子器件（10）具有基板（20）和平行于基板延伸并且具有面向阳极（40）的电子发射侧向边缘（110）的超薄发射极电极（30） ）跨越发射极到阳极间隙（120）。 具有横向尺寸仅为发射极 - 阳极间隙宽度的一小部分的控制电极（70）平行于发射器设置，并且通过预定厚度的绝缘体（60）与发射器间隔开。 控制电极的垂直尺寸只是阳极高度的一小部分。 控制电极可以基本上围绕阳极的一部分，与阳极以同心的方式间隔开。 发射极和控制电极之间的电极间电容仅具有非常小的值，仅由非常小的面积项和非常小的边缘场项构成，从而允许微电子器件在比以前更高的频率或开关速度下运行 。 控制电极和阳极之间的电极间电容也只有非常小的值，从而进一步提高了更高的频率性能。 具有多个控制电极的器件也可以具有改善的电极间电容。 为了始终如一地实现改进的性能，制造工艺（S1-S18）特别适用于制造具有小而精确尺寸和适当精确对准的装置。 特别适用的工艺使用两种牺牲材料（150和160），其中一种形成临时芯棒，并使用共形导电层形成每个控制电极，同时自动实现所需的对准精度。
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