公开(公告)号：WO2006072021A2

公开(公告)日：2006-07-06

申请号：PCT/US2005047516

申请日：2005-12-30

Applicant: DU PONT ,  PRAKASH SHIVA

Inventor： PRAKASH SHIVA

IPC: H01L31/12 ,  C23C14/00 ,  C23C14/32 ,  H01L29/16

CPC classification number: H01L51/5203 ,  C23C14/086 ,  C23C14/46 ,  H01L51/001 ,  H01L51/0021 ,  H01L51/0034 ,  H01L51/0035 ,  H01L51/0037 ,  H01L51/0038 ,  H01L51/0051

Abstract: A process for forming an electronic device includes forming a first layer over a substrate, wherein the first layer includes an organic layer, and depositing a second layer over the substrate after forming the first layer, wherein depositing the second layer is performed using ion beam sputtering. In another embodiment, a process for forming an electronic device includes placing a workpiece within a depositing chamber of a depositing apparatus, wherein the workpiece includes a substrate and an organic layer overlying the workpiece. The process includes generating a plasma within a plasma-generating chamber of the depositing apparatus, wherein the plasma is not in direct contact with the workpiece. The process also includes sending an ion beam from the plasma-generating chamber towards a target within the depositing chamber, wherein the target includes a material, and depositing a layer of the material over the organic layer.

Abstract translation: 一种用于形成电子器件的方法包括在衬底上形成第一层，其中第一层包括有机层，以及在形成第一层之后在衬底上沉积第二层，其中沉积第二层使用离子束溅射 。 在另一个实施例中，用于形成电子设备的方法包括将工件放置在沉积设备的沉积室内，其中工件包括衬底和覆盖工件的有机层。 该方法包括在沉积设备的等离子体产生室内产生等离子体，其中等离子体不与工件直接接触。 该过程还包括将离子束从等离子体发生室发送到沉积室内的靶，其中靶包括材料，以及在有机层上沉积材料层。

公开(公告)号：WO2006072001A3

公开(公告)日：2006-07-06

申请号：PCT/US2005/047475

申请日：2005-12-28

Applicant: E.I. DUPONT DE NEMOURS AND COMPANY ,  LECLOUX, Daniel, David ,  STAINER, Matthew ,  SMITH, Eric, M. ,  CHESTERFIELD, Reid, J. ,  PRAKASH, Shiva

Inventor： LECLOUX, Daniel, David ,  STAINER, Matthew ,  SMITH, Eric, M. ,  CHESTERFIELD, Reid, J. ,  PRAKASH, Shiva

IPC: H01L29/08 ,  H01L31/00 ,  H01L29/04 ,  H01L29/22 ,  H01L29/24

Abstract: Compositions are described comprising small molecule active material, polymer, and aprotic solvent, and methods for making the same, as well as devices and sub-assemblies including the same.

公开(公告)号：WO2005057681A8

公开(公告)日：2005-08-11

申请号：PCT/US2004023671

申请日：2004-07-22

Applicant: DU PONT ,  PRAKASH SHIVA ,  LI FENG ,  LOPEZ GUTIERREZ LINNETTE AMARI

Inventor： PRAKASH SHIVA ,  LI FENG ,  LOPEZ GUTIERREZ LINNETTE AMARI

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/30 ,  H01L51/40 ,  H01L51/56

CPC classification number: H01L51/0017 ,  H01L27/3281 ,  H01L51/0037 ,  H01L51/0038 ,  H01L51/0051 ,  H01L51/0062 ,  H01L51/007 ,  H01L51/56 ,  Y02E10/549

Abstract: A process for forming an organic electronic device includes the steps of: (a) forming a first conductive member and a conductive lead over a substrate, wherein the first conductive member and conductive lead are spaced apart from each other; (b) forming an organic layer over the substrate, the first conductive member, and the conductive lead; (c) forming a patterned conductive layer over the organic layer, wherein the patterned conductive layer includes a second conductive member, and the patterned conductive layer creates an exposed portion of the organic layer and an unexposed portion of the organic layer; and (d) dry etching at least the exposed portion of the organic layer to expose a portion of the conductive lead using at least one oxygen-containing gas, wherein dry etching is performed at a pressure in a range of approximately 0.01 to 7.5 mTorr.

Abstract translation: 一种形成有机电子器件的工艺包括以下步骤：（a）在衬底上形成第一导电部件和导电引线，其中第一导电部件和导电引线彼此间隔开; （b）在衬底，第一导电构件和导电引线上形成有机层; （c）在有机层上形成图案化导电层，其中图案化导电层包括第二导电构件，并且图案化导电层形成有机层的暴露部分和有机层的未暴露部分; （d）至少对所述有机层的暴露部分进行干法蚀刻以使用至少一种含氧气体暴露所述导电引线的一部分，其中干蚀刻在约0.01至7.5毫托的范围内的压力下进行。

公开(公告)号：WO2008082642A3

公开(公告)日：2008-12-04

申请号：PCT/US2007026467

申请日：2007-12-28

Applicant: DU PONT ,  PRAKASH SHIVA ,  TRUONG NUGENT

Inventor： PRAKASH SHIVA ,  TRUONG NUGENT

IPC: H01L51/52

CPC classification number: H01L51/0015 ,  H01L27/3295 ,  H01L51/5096 ,  Y10T428/24942

Abstract: An electronic device (10) can include an organic device layer having a first (22) and a second portion (24). In one embodiment, the first portion (22) can have a higher resistivity than the second portion (24) and lie between a first and a second electrode (14, 16, 18) and include not more than 15 mole percent basic material. In a particular embodiment, the first and the second electrode can be an anode and cathode of a pixel. In another particular embodiment, the first and the second electrode (14, 16, 18) can be either both anodes or both cathodes of different pixels. In another embodiment, the organic device layer can include a large molecule material. In still another embodiment, a process of forming the electronic device can include selectively modifying the first portion of the organic device layer.

Abstract translation: 电子设备（10）可以包括具有第一（22）和第二部分（24）的有机器件层。 在一个实施例中，第一部分（22）可以具有比第二部分（24）更高的电阻率并且位于第一和第二电极（14,16,18）之间，并且包括不超过15摩尔％的基本材料。 在特定实施例中，第一和第二电极可以是像素的阳极和阴极。 在另一特定实施例中，第一和第二电极（14,16,18）既可以是阳极，也可以是不同像素的两个阴极。 在另一个实施方案中，有机器件层可以包括大分子材料。 在另一个实施例中，形成电子设备的过程可以包括选择性地修改有机器件层的第一部分。

公开(公告)号：WO2006072022A2

公开(公告)日：2006-07-06

申请号：PCT/US2005/047517

申请日：2005-12-30

Applicant: E. I. DU PONT DE NEMOURS AND COMPANY ,  PRAKASH, Shiva ,  MACPHERSON, Charles, Douglas ,  SRDANOV, Gordana ,  STAINER, Matthew ,  YU, Gang

Inventor： PRAKASH, Shiva ,  MACPHERSON, Charles, Douglas ,  SRDANOV, Gordana ,  STAINER, Matthew ,  YU, Gang

IPC: H01L21/00 ,  H01L33/00

CPC classification number: H01L51/0007 ,  H01L27/3211 ,  H01L51/0005 ,  H01L51/0037 ,  H01L51/0039 ,  H01L51/0052 ,  H01L51/56

Abstract: A process for forming an electronic device includes forming a first layer over a substrate and placing a first liquid composition over a first portion of the first layer. The first liquid composition includes at least a first guest material and a first liquid medium. The first liquid composition comes in contact with the first layer and a substantial amount of the first guest material intermixes with the first layer. An electronic device includes a substrate and a continuous first layer overlying the substrate. The continuous layer includes a first portion in which an electronic component lies and a second portion where no electronic component lies. The first portion is at least 30nm thick and includes a first guest material, and the second portion is no more than 40nm thick.

Abstract translation: 一种用于形成电子器件的方法包括在衬底上形成第一层并将第一液体组合物置于第一层的第一部分上。 第一液体组合物包括至少第一客体材料和第一液体介质。 第一液体组合物与第一层接触并且大量的第一客体材料与第一层混合。 电子器件包括衬底和覆盖衬底的连续的第一层。 连续层包括电子部件所在的第一部分和没有电子部件所在的第二部分。 第一部分为至少30nm厚，并且包括第一客体材料，并且第二部分不超过40nm厚。

公开(公告)号：US09407514B2

公开(公告)日：2016-08-02

申请号：US14131446

申请日：2011-07-11

Applicant: SM Prakash Shiva ,  Raman Ramteke Venkatesh ,  Jerome Rolia ,  Mustazirul Islam

Inventor： SM Prakash Shiva ,  Raman Ramteke Venkatesh ,  Jerome Rolia ,  Mustazirul Islam

IPC: G06F9/44 ,  H04L12/24 ,  G06F9/455 ,  G06F9/50 ,  G06F11/34 ,  G06F11/36

CPC classification number: H04L41/5003 ,  G06F9/45533 ,  G06F9/45558 ,  G06F9/505 ,  G06F9/5077 ,  G06F9/5083 ,  G06F11/3419 ,  G06F11/3466 ,  G06F11/3688 ,  G06F2009/4557

Abstract: Methods, apparatus, and computer readable media with executable instructions stored thereon for virtual machine placement are provided. A user's demands on execution of a number of tasks, each task including a demand trace, can be defined as Service Level Agreement (SLA) information, including one or more Class of Service (CoS) levels defined by a Base Resource Entitlement (BRE) criteria and a Reserved Resource Entitlement (RRE) criteria (222). A highest CoS level of the one or more CoS levels can be selected (224) and the tasks within the Cos level can be load-balanced across a pool of servers (226). At least a portion of the RRE criteria can be removed from the demand trace of the selected CoS level (228). The selecting, load-balancing, and removing steps can be repeated until there are no more CoS levels (230).

Abstract translation: 提供了其上存储有用于虚拟机放置的可执行指令的方法，装置和计算机可读介质。 用户对执行多个任务（包括需求跟踪的每个任务）的要求可以被定义为服务水平协议（SLA）信息，包括由基本资源权利（BRE）定义的一个或多个服务等级（CoS）级别， 标准和保留资源权利（RRE）标准（222）。 可以选择一个或多个CoS级别的最高CoS级别（224），并且Cos级别中的任务可以跨服务器池进行负载平衡（226）。 可以从所选CoS级别的需求跟踪中删除至少一部分RRE标准（228）。 可以重复选择，负载平衡和删除步骤，直到没有更多的CoS级别（230）。

公开(公告)号：US20130132009A1

公开(公告)日：2013-05-23

申请号：US13812949

申请日：2010-08-06

Applicant: Jerome Rolia ,  Cullen E. Bash ,  Daniel J. Gmach ,  Yuan Chen ,  Mustazirul Islam ,  SM Prakash Shiva ,  Zhikui Wang

Inventor： Jerome Rolia ,  Cullen E. Bash ,  Daniel J. Gmach ,  Yuan Chen ,  Mustazirul Islam ,  SM Prakash Shiva ,  Zhikui Wang

IPC: G01R21/133 ,  G06F17/00

CPC classification number: G01R21/133 ,  G06F1/3209 ,  G06F1/329 ,  G06F11/3003 ,  G06F11/3062 ,  G06F17/00 ,  G06F2201/865 ,  G06F2201/87 ,  Y02D10/24

Abstract: The present disclosure includes a system and method for apportioning power consumption. In an example of apportioning power consumption according to the present disclosure, a transaction mix for a service is determined (104, 204, 330, 420), component resource usage for each of a number of components that are used while completing the service is determined (106, 206, 108, 208, 422), and component power consumption for each of the number of components is determined by use of the component resource usage (334, 424).

Abstract translation: 本公开包括用于分配功率消耗的系统和方法。 在根据本公开的分配功耗的示例中，确定服务的交易组合（104,204,330,420），确定在完成服务期间使用的多个组件中的每一个的组件资源使用 （106,206,108,208,422），并且通过使用组件资源使用（334,424）来确定多个组件中的每一个的组件功耗。

公开(公告)号：US20120221373A1

公开(公告)日：2012-08-30

申请号：US13036466

申请日：2011-02-28

Applicant: Manish Marwah ,  Brian J. Watson ,  Daniel Juergen Gmach ,  Yuan Chen ,  Zhikui Wang ,  Cullen E. Bash ,  Jerome Rolia ,  Mustazirul Islam ,  SM Prakash Shiva

Inventor： Manish Marwah ,  Brian J. Watson ,  Daniel Juergen Gmach ,  Yuan Chen ,  Zhikui Wang ,  Cullen E. Bash ,  Jerome Rolia ,  Mustazirul Islam ,  SM Prakash Shiva

IPC: G06Q10/00

CPC classification number: G06Q10/04 ,  G06Q10/067

Abstract: An embodiment includes gathering input data including observed utilizations of allocations and business service response times. The input data is partitioned into a plurality of data sets that include at least one training data set and at least one test data set. A model is generated that predicts responsiveness using the at least one training data set. The model is evaluated using the at least one test data set, and a business service response time distribution is predicted using the model. An embodiment may use a trace-based capacity planning methodology to estimate the impact of planning alternatives on business service responsiveness.

Abstract translation: 一个实施例包括收集输入数据，包括观察到的分配利用率和业务服务响应时间。 输入数据被分割成包括至少一个训练数据集和至少一个测试数据集的多个数据集。 生成使用至少一个训练数据集来预测响应性的模型。 使用至少一个测试数据集评估该模型，并使用模型预测业务服务响应时间分布。 一个实施例可以使用基于跟踪的容量规划方法来估计替代方案对业务服务响应性的影响。

公开(公告)号：US20150178115A1

公开(公告)日：2015-06-25

申请号：US14406564

申请日：2012-06-22

Applicant: SM Prakash Shiva ,  Raman Ramteke Venkatesh

Inventor： SM Prakash Shiva ,  Raman Ramteke Venkatesh

IPC: G06F9/455 ,  G06F13/10

CPC classification number: G06F9/45558 ,  G06F13/102 ,  G06F2009/45579 ,  H04L12/4641

Abstract: A multiary tree represents relationships among physical storage units and host computing devices. Virtual machines are optimally assigned among the host computing devices, and virtual disks of the virtual machines are optimally assigned among the physical storage units, using and extending the multiary tree used on constraints. The constraints regard the physical storage units, the host computing devices, the virtual machines, and the virtual disks.

Abstract translation: 多树表示物理存储单元和主机计算设备之间的关系。 虚拟机在主机计算设备之间被最佳地分配，并且虚拟机的虚拟磁盘在物理存储单元之间被最佳地分配，使用并扩展了约束条件下使用的多重树。 约束涉及物理存储单元，主机计算设备，虚拟机和虚拟磁盘。

公开(公告)号：US20140165063A1

公开(公告)日：2014-06-12

申请号：US14234640

申请日：2011-07-29

Applicant: SM Prakash Shiva ,  Jerome Rolia ,  Raman Ramteke Venkatesh ,  Mustazirul Islam

Inventor： SM Prakash Shiva ,  Jerome Rolia ,  Raman Ramteke Venkatesh ,  Mustazirul Islam

IPC: G06F9/455

CPC classification number: G06F9/45533 ,  G06F9/45558 ,  G06F9/4862 ,  G06F9/4875 ,  G06F21/57 ,  G06F2009/4557 ,  G06F2201/815 ,  H04L67/10

Abstract: Example methods, apparatus and articles of manufacture to migrate virtual machines are disclosed. A disclosed example method includes identifying via a processor a first virtual machine to be migrated from a first host to a second host to improve a performance of the first virtual machine, determining that a frequency threshold associated with the first virtual machine will not be exceeded if the first virtual machine is migrated, determining a reliability rating for the first virtual machine, and migrating the first virtual machine to the second host based on the frequency threshold and the reliability rating.

Abstract translation: 公开了用于迁移虚拟机的示例性方法，装置和制造。 所公开的示例性方法包括经由处理器识别要从第一主机迁移到第二主机的第一虚拟机以改善第一虚拟机的性能，确定与第一虚拟机相关联的频率阈值将不会被超过，如果 迁移第一个虚拟机，确定第一个虚拟机的可靠性等级，并根据频率阈值和可靠性等级将第一个虚拟机迁移到第二个主机。