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    METHOD AND APPARATUS OF PLASMA PROCESSING
    21.
    发明申请
    METHOD AND APPARATUS OF PLASMA PROCESSING 审中-公开
    等离子体处理的方法和装置

    公开(公告)号：WO2005118905A1

    公开(公告)日：2005-12-15

    申请号：PCT/US2005/016628

    申请日：2005-05-12

    Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  BRCKA, Jozef

    Inventor： BRCKA, Jozef

    IPC: C23C14/04

    CPC classification number: C23C14/046

    Abstract: A deposition system (100) and method of operating thereof is described for depositing a conformal metal or other similarly responsive coating material film in a high aspect ratio feature using a high density plasma is described. The deposition system includes a plasma source (120), and a distributed metal source (130) for forming plasma and introducing metal vapor to the deposition system (100), respectively. The deposition system is configured to form a plasma having a plasma density and generate metal vapor having a metal density, wherein the ratio of the metal density to the plasma density proximate the substrate is less than or equal to unity. This ratio should exist at least within a distance from the surface of the substrate (114) that is about twenty percent of the diameter of the substrate. A ratio that is uniform within plus or minus twenty-five percent substantially across the surface of said substrate is desirable. The ratio is particularly effective for plasma density exceeding 10 12 cm -3 , and for depositing film on substrates having nanoscale features with maximum film thickness less than half of the feature width, for example, at ten percent of the feature width.

    Abstract translation: 描述了沉积系统（100）及其操作方法，用于使用高密度等离子体沉积具有高纵横比特征的保形金属或其它类似响应的涂层材料膜。 沉积系统包括等离子体源（120）和分别用于形成等离子体并将金属蒸汽引入沉积系统（100）的分布式金属源（130）。 沉积系统被配置为形成具有等离子体密度并产生具有金属密度的金属蒸气的等离子体，其中金属密度与靠近基底的等离子体密度之比小于或等于1。 该比例应至少存在于基板表面（114）的至少一定距离内，该距离约为基板直径的二十分之一。 在所述衬底的表面上基本上跨越正或负百分之二十五的均匀的比例是理想的。 该比例对于超过10 12 cm -3的等离子体密度特别有效，并且对于具有最小膜厚度小于特征宽度的一半的纳米尺度特征的基底上沉积膜，例如，在特征宽度的10％ 。

    COMPACT, DISTRIBUTED INDUCTIVE ELEMENT FOR LARGE SCALE INDUCTIVELY-COUPLED PLASMA SOURCES
    23.
    发明申请
    COMPACT, DISTRIBUTED INDUCTIVE ELEMENT FOR LARGE SCALE INDUCTIVELY-COUPLED PLASMA SOURCES 审中-公开

    公开(公告)号：WO2005074000A3

    公开(公告)日：2005-08-11

    申请号：PCT/US2005/001325

    申请日：2005-01-18

    Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  BRCKA, Jozef

    Inventor： BRCKA, Jozef

    IPC: H01J37/32

    Abstract: An inductively coupled plasma source is provided with a compact inductive element (20) that is configured to produce a spatially distributed plasma (15) particularly suitable for processing large scale wafers (14). The element (20) in its preferred embodiment is formed of a sheet material for compactness and ease in configuring. The element (20) is located outside of a dielectric wall or window (16) of a processing chamber (12), generally congruent to the dielectric wall or window, formed of one or more layers or loops (40). The conductor provides a conductive path around each loop that has a serpentine or oscillating configuration that renders the path around each loop greater than the circumference of the element (20). The path is so shaped by cutouts (30) along the side edges of the element. The conductor is formed of alternating sections (31-35) of large and small aspect ratio, defined as the width across the path to the thickness of the sheet. The sections are also defined by cutouts in the sheet. Narrower sections concentrate currents have higher inductances, and couple greater amounts of energy into the chamber, thereby producing rings of discrete plasma concentrations. One or more rings can be produced by configuring one or more loops of the inductive element so the higher inductance, lower aspect ration sections lie at appropriate radii from the axis of the chamber.

    METHOD OF FORMING METAL CARBIDE BARRIER LAYERS FOR FLUOROCARBON FILMS
    24.
    发明申请
    METHOD OF FORMING METAL CARBIDE BARRIER LAYERS FOR FLUOROCARBON FILMS 审中-公开
    形成氟碳膜的金属碳化物膜层的方法

    公开(公告)号：WO2013043512A1

    公开(公告)日：2013-03-28

    申请号：PCT/US2012/055608

    申请日：2012-09-14

    Applicant: TOKYO ELECTRON LIMITED ,  KIKUCHI, Yoshiyuki ,  TOKYO ELECTRON AMERICA, INC

    Inventor： KIKUCHI, Yoshiyuki

    IPC: H01L21/469

    CPC classification number: H01L21/76801 ,  C23C14/20 ,  C23C14/5806 ,  C23C14/5873 ,  C23C16/22 ,  C23C16/45565 ,  C23C16/511 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02362 ,  H01L21/76841 ,  H01L21/76855 ,  H01L21/76864

    Abstract: A method of forming metal carbide barrier layers for fluorocarbon films in semiconductor devices is described. The method includes depositing a fluorocarbon film on a substrate and depositing a metal-containing layer on the fluorocarbon film at a first temperature, where the metal-containing layer reacts with the fluorocarbon film to form a metal fluoride layer at an interface between the metal-containing layer and the fluorocarbon film. The method further includes heat-treating the metal-containing layer at a second temperature that is greater than the first temperature, wherein the heat-treating the metal-containing layer removes fluorine from the metal fluoride layer by diffusion through the metal-containing layer and forms a metal carbide layer barrier layer at the interface between the metal-containing layer and the fluorocarbon film, and wherein the metal-containing layer survives the heat- treating at the second temperature without blistering or pealing.

    Abstract translation: 描述了在半导体器件中形成氟碳膜的金属碳化物阻挡层的方法。 该方法包括在基片上沉积氟碳膜，并在第一温度下在氟碳膜上沉积含金属层，其中含金属层与碳氟化合物膜反应，在金属 - 含氟层和氟碳膜。 该方法还包括在大于第一温度的第二温度下对含金属层进行热处理，其中热处理含金属层通过扩散穿过含金属层从金属氟化物层除去氟， 在含金属层和氟碳膜之间的界面处形成金属碳化物层阻挡层，并且其中含金属层在第二温度下经受热处理而没有起泡或起泡。

    METHOD OF SLIMMING RADIATION-SENSITIVE MATERIAL LINES IN LITHOGRAPHIC APPLICATIONS
    26.
    发明申请
    METHOD OF SLIMMING RADIATION-SENSITIVE MATERIAL LINES IN LITHOGRAPHIC APPLICATIONS 审中-公开
    在光刻应用中消除辐射敏感材料线的方法

    公开(公告)号：WO2012134910A1

    公开(公告)日：2012-10-04

    申请号：PCT/US2012/029905

    申请日：2012-03-21

    Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  CARCASI, Michael, A. ,  RATHSACK, Benjamin, M. ,  SOMERVELL, Mark, H.

    Inventor： CARCASI, Michael, A. ,  RATHSACK, Benjamin, M. ,  SOMERVELL, Mark, H.

    IPC: G03F7/20 ,  G03F7/32 ,  G03F7/40

    CPC classification number: G03F7/40 ,  G03F7/2024 ,  G03F7/32 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/67207

    Abstract: A method and system for patterning a substrate (101, 201, 301, 401 ) using a radiation-sensitive material (102, 202, 302, 402) is described. The method and system include forming a layer of radiation-sensitive material (102, 202, 302, 402) on a substrate (101, 201, 301, 401 ), exposing the layer of radiation-sensitive material (102, 202, 302, 402) to a pattern of radiation (107, 207, 307, 407), and then performing a post-exposure bake following the exposing. The imaged layer of radiation-sensitive material (101, 201, 301, 401 ) is then developed to remove either a region (105, 205,312, 412) having high radiation exposure or a region (106, 206, 313, 413) having low radiation exposure to form radiation-sensitive material lines. An exposure gradient within the radiation-sensitive material lines is then removed, followed by slimming the radiation-sensitive material lines.

    Abstract translation: 描述了使用辐射敏感材料（102,202,302,402）构图衬底（101,201,301,401）的方法和系统。 所述方法和系统包括在衬底（101,201,301,401）上形成辐射敏感材料层（102,202,302,402），使所述辐射敏感材料层（102,202,302,402） 402）到辐射图案（107,207,307,407），然后在曝光之后进行曝光后烘烤。 然后显影成像的辐射敏感材料层（101,201,301,401）以去除具有高辐射照射的区域（105,205,312,412）或具有低辐射敏感性材料的区域（106,206,313,413） 辐射暴露形成辐射敏感材料线。 然后去除辐射敏感材料线内的曝光梯度，随后减少辐射敏感材料线。

    METHOD FOR CONTROLLING DANGLING BONDS IN FLUOROCARBON FILMS
    27.
    发明申请
    METHOD FOR CONTROLLING DANGLING BONDS IN FLUOROCARBON FILMS 审中-公开
    控制荧光膜中的危险物质的方法

    公开(公告)号：WO2012129122A1

    公开(公告)日：2012-09-27

    申请号：PCT/US2012/029550

    申请日：2012-03-16

    Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  KOKUCHI, Yoshiyuki

    Inventor： KOKUCHI, Yoshiyuki

    IPC: H01L21/263 ,  H01L21/768

    CPC classification number: H01L21/0212 ,  H01L21/02274 ,  H01L21/76801

    Abstract: Embodiments of the invention describe a method for forming fluorocarbon films for semiconductor devices. The method includes providing a substrate on a substrate holder in a plasma processing chamber, introducing in the plasma processing chamber a first process gas containing a C a F b gas, forming a first plasma from the first process gas by applying a first RF bias and a first positive DC bias to the substrate holder, and depositing a first fluorocarbon film on the substrate by the first plasma. The method further includes introducing in the plasma processing chamber a second process gas containing a C a F b gas, forming a second plasma from the second process gas by applying microwave power to the microwave antenna, and applying second RF bias and a second positive DC bias to the substrate holder, and depositing a second fluorocarbon film on the first fluorocarbon film by the second plasma.

    Abstract translation: 本发明的实施例描述了一种用于形成用于半导体器件的氟碳膜的方法。 该方法包括在等离子体处理室中的衬底保持器上设置衬底，在等离子体处理室中引入含有CaFb气体的第一工艺气体，通过施加第一RF偏压和第一正偏压从第一工艺气体形成第一等离子体 DC偏压到衬底保持器，以及通过第一等离子体在衬底上沉积第一碳氟化合物膜。 该方法还包括在等离子体处理室中引入含有CaFb气体的第二工艺气体，通过向微波天线施加微波功率从第二工艺气体形成第二等离子体，以及将第二RF偏压和第二正DC偏压施加到 衬底保持器，并且通过第二等离子体在第一碳氟膜上沉积第二碳氟化合物膜。

    METHOD OF ETCHING FEATURES IN SILICON NITRIDE FILMS
    28.
    发明申请
    METHOD OF ETCHING FEATURES IN SILICON NITRIDE FILMS 审中-公开
    硅酸盐膜中特征蚀刻的方法

    公开(公告)号：WO2012109159A1

    公开(公告)日：2012-08-16

    申请号：PCT/US2012/024017

    申请日：2012-02-06

    Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  NISHIZUKA, Tetsuya

    Inventor： NISHIZUKA, Tetsuya

    IPC: H01L21/306 ,  H01L21/00

    CPC classification number: H01L21/31116 ,  H01J37/32192 ,  H01L21/31144

    Abstract: A processing method is provided for plasma etching features in a silicon nitride (SiN) film covered by a mask pattern. The method includes preparing a film stack on a substrate, the film stack containing a SiN film on the substrate and a mask pattern on the SiN film, forming a plasma from a process gas containing HBr gas, O2 gas, and a carbon-fluorine-containing gas, applying pulsed RF bias power to the substrate, and transferring the mask pattern to the SiN film by exposing the film stack to the plasma.

    Abstract translation: 提供了用掩模图案覆盖的氮化硅（SiN）膜中的等离子体蚀刻特征的处理方法。 该方法包括在基板上制备薄膜叠层，薄膜叠层在基片上含有SiN薄膜，SiN薄膜上形成掩模图形，从含有HBr气体，O2气体和碳氟层的工艺气体形成等离子体， 向衬底施加脉冲RF偏置功率，并通过将膜堆暴露于等离子体将掩模图案转移到SiN膜。

    SELECTIVE ETCH PROCESS FOR SILICON NITRIDE
    29.
    发明申请
    SELECTIVE ETCH PROCESS FOR SILICON NITRIDE 审中-公开
    氮化硅的选择性蚀刻工艺

    公开(公告)号：WO2012047459A2

    公开(公告)日：2012-04-12

    申请号：PCT/US2011051379

    申请日：2011-09-13

    Applicant: TOKYO ELECTRON LTD ,  TOKYO ELECTRON AMERICA INC ,  METZ ANDREW W ,  COTTLE HONGYUN

    Inventor： METZ ANDREW W ,  COTTLE HONGYUN

    IPC: H01L21/311

    CPC classification number: H01L21/311 ,  H01J37/32082 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/76897

    Abstract: A method for selectively etching a substrate (25, 140, 150, 300, 310, 510) is described. The method includes preparing a substrate (25, 140, 150, 300, 310, 510) comprising a silicon nitride layer (180, 320) overlying a silicon-containing contact region (172, 343), and patterning the silicon nitride layer (180, 320) to expose the silicon-containing contact region (172, 343) using a plasma etching process in a plasma etching system (1, 1 a, 1 b, 1 c, 1 c', 1 d, 1 e, 1f). The plasma etching process uses a process composition having as incipient ingredients a process gas containing C, H and F, and a non-oxygen-containing additive gas, wherein the non-oxygen- containing additive gas includes H, or C, or both H and C, and excludes a halogen atom.

    Abstract translation: 描述了用于选择性地蚀刻衬底（25,140,​​150,300,310,510）的方法。 该方法包括制备包括覆盖含硅接触区（172,343）的氮化硅层（180,320）的衬底（25,140,​​150,300,310,510），并且图案化氮化硅层（180,320） ，在等离子体蚀刻系统（1,1a，1b，1c，1c'，1d，1e，1f）中使用等离子体蚀刻工艺来暴露含硅接触区域（172,343） 。 等离子体蚀刻工艺使用具有含有C，H和F以及不含氧的添加剂气体的处理气体作为初始成分的处理组合物，其中不含氧的添加剂气体包括H或C或H 和C，并排除卤素原子。

    METHOD FOR REWORKING A SILICON-CONTAINING ARC LAYER ON A SUBSTRATE
    30.
    发明申请
    METHOD FOR REWORKING A SILICON-CONTAINING ARC LAYER ON A SUBSTRATE 审中-公开
    在基板上重新制造含硅的ARC层的方法

    公开(公告)号：WO2011041268A1

    公开(公告)日：2011-04-07

    申请号：PCT/US2010/050416

    申请日：2010-09-27

    Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  FITRIANTO

    Inventor： FITRIANTO

    IPC: H01L21/3205 ,  H01L21/306

    CPC classification number: G03F7/427 ,  H01L21/02079 ,  H01L21/31111 ,  H01L21/31133

    Abstract: A method is provided for reworking film structures containing silicon-containing anti- reflective coating (SiARC) layers in semiconductor device manufacturing. The method includes providing a substrate containing a film stack that includes SiARC layer thereon, and a resist pattern formed on the SiARC layer. The method further includes removing the resist pattern from the SiARC layer, exposing the SiARC layer to process gas containing ozone (O 3 ) gas to modify the SiARC layer, treating the modified SiARC layer with a dilute hydrofluoric acid (DHF) liquid, and centrifugally removing the modified SiARC layer from the substrate.

    Abstract translation: 提供一种用于在半导体器件制造中对含有含硅抗反射涂层（SiARC）层的膜结构进行再加工的方法。 该方法包括提供包含其上包括SiARC层的膜堆叠的衬底和形成在SiARC层上的抗蚀剂图案。 该方法还包括从SiARC层去除抗蚀剂图案，使SiARC层暴露于处理含有臭氧（O 3）气体的气体以修饰SiARC层，用稀氢氟酸（DHF）液处理改性的SiARC层，并离心除去 来自衬底的改性SiARC层。

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