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公开(公告)号：KR101915212B1
公开(公告)日：2018-11-06
申请号：KR1020120016203
申请日：2012-02-17
Applicant: 엘지이노텍 주식회사
Abstract: 실시예에따른발광소자는제1 도전형반도체층과활성층및 제2 도전형반도체층을포함하는발광구조물; 및상기제1 도전형반도체층과활성층사이에위치하고, In을포함하는전자주입층;을포함하고, 상기활성층은우물층과장벽층이적어도한번교대로위치하고상기전자주입층은복수개의서브층을포함하며, 상기서브층의에너지밴드갭이상기우물층의에너지밴드갭보다넓다.
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公开(公告)号：KR1020170105942A
公开(公告)日：2017-09-20
申请号：KR1020160029364
申请日：2016-03-11
Applicant: 엘지이노텍 주식회사
Abstract: 실시예는발광소자, 발광소자의제조방법, 발광소자패키지및 조명장치에관한것이다. 실시예에따른발광소자는기판과, 상기기판상에버퍼층과, 상기버퍼층상에제1 GaN층및 제1 도전형제2 GaN층을포함하는제1 GaN 계열초격자층과, 상기제1 GaN계열초격자층상에제3 GaN층및 제1 도전형제4 GaN층을포함하는제2 GaN계열초격자층과, 상기제2 GaN계열초격자층상에제1 도전형반도체층과, 상기제1 도전형반도체층상에활성층및 상기활성층상에제2 도전형반도체층을포함할수 있다.
Abstract translation: 实施例涉及发光器件，制造发光器件的方法，发光器件封装和照明器件。 根据实施例的发光器件包括衬底，在衬底上的缓冲层，在缓冲层上的包括第一GaN层和第一GaN基第二GaN层的第一GaN基超晶格层， 第二GaN基超晶格层，包括超晶格层上的第三GaN层和第一导电类型-4 GaN层;第二GaN基超晶格层上的第一导电类型半导体层; 半导体层上的有源层和有源层上的第二导电类型半导体层。
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公开(公告)号：KR1020160096328A
公开(公告)日：2016-08-16
申请号：KR1020150017815
申请日：2015-02-05
Applicant: 엘지이노텍 주식회사
IPC: H01L33/14
CPC classification number: H01L33/145
Abstract: 실시예의발광소자는제1 도전형반도체층과, 제1 도전형반도체층위에배치된활성층과, 활성층위에배치된제2 도전형제1 반도체층과, 제2 도전형제1 반도체층위에배치된제1 언도프된반도체층및 제1 언도프된반도체층위에배치된제2 도전형제2 반도체층을포함한다.
Abstract translation: 实施例的发光器件包括第一导电型半导体层，布置在第一导电类型半导体上的有源层，布置在有源层上的第二导电类型第一半导体层，布置在第二导电类型上的第一未掺杂半导体层 第一半导体层和布置在第一未掺杂半导体层上的第二导电类型的第二半导体层。 因此，可以提高发光器件的光学或电学性能。
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公开(公告)号：KR1020150011890A
公开(公告)日：2015-02-03
申请号：KR1020130087050
申请日：2013-07-24
Applicant: 엘지이노텍 주식회사
CPC classification number: H01L33/14 , H01L2924/12041
Abstract: A light emitting device according to an embodiment includes a first semiconductor layer, a second semiconductor layer, an active layer between the first semiconductor layer and the second semiconductor layer, and a middle layer arranged between the active layer and the second semiconductor layer. The middle layer includes InGaN doped with P-type dopant, a first layer adjacent to the active layer, and a second layer adjacent to the second semiconductor layer. The doping concentration of the dopant of the first layer may be lower than the doping concentration of the dopant of the second layer.
Abstract translation: 根据实施例的发光器件包括第一半导体层，第二半导体层，第一半导体层和第二半导体层之间的有源层，以及布置在有源层和第二半导体层之间的中间层。 中间层包括掺杂有P型掺杂剂的InGaN，与有源层相邻的第一层，以及与第二半导体层相邻的第二层。 第一层的掺杂剂的掺杂浓度可以低于第二层的掺杂剂的掺杂浓度。
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公开(公告)号：KR1020130065096A
公开(公告)日：2013-06-19
申请号：KR1020110131815
申请日：2011-12-09
Applicant: 엘지이노텍 주식회사
Inventor： 한대섭
CPC classification number: H01L33/06 , H01L33/10 , H01L33/145 , H01L33/36 , H01L2924/12041
Abstract: PURPOSE: A light emitting device is provided to reduce a QCSE by decreasing electric charge polarization difference between a quantum well layer and a quantum barrier layer, and to improve luminous efficiency. CONSTITUTION: A second conductive semiconductor layer(126) is arranged on a first conductive semiconductor layer(122). An active layer(124) is arranged between the first conductive semiconductor layer and a second conductive semiconductor layer. The active layer includes a quantum well layer(QW1-QW3) and a quantum barrier layer(B1-B4). An electron barrier layer(125) is arranged between the active layer and the second conductive semiconductor layer. The energy bandgap(E3) of the electron barrier layer is greater than the energy bandgap(E21-E23) of the quantum layer and the energy bandgap(E02) of the second conductive semiconductor layer. [Reference numerals] (AA) Electron injection layer; (BB) Hole injection layer
Abstract translation: 目的：提供一种通过减少量子阱层和量子势垒层之间的电荷极化差来减少QCSE并提高发光效率的发光器件。 构成：在第一导电半导体层（122）上布置第二导电半导体层（126）。 在第一导电半导体层和第二导电半导体层之间布置有源层（124）。 活性层包括量子阱层（QW1-QW3）和量子势垒层（B1-B4）。 在有源层和第二导电半导体层之间布置有电子势垒层（125）。 电子势垒层的能带隙（E3）大于量子层的能带隙（E21-E23）和第二导电半导体层的能带隙（E02）。 （标号）（AA）电子注入层; （BB）空穴注入层
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Patent Agency Ranking
公开(公告)号：KR1020130065095A
公开(公告)日：2013-06-19
申请号：KR1020110131814
申请日：2011-12-09
Applicant: 엘지이노텍 주식회사
Inventor： 한대섭
IPC: H01L33/14
Abstract: PURPOSE: A light emitting device is provided to improve luminous efficiency by promoting the horizontal and vertical transfer of holes which move from a second conductive semiconductor layer to an active layer. CONSTITUTION: A second conductive semiconductor layer(126) is arranged on a first conductive semiconductor layer(122). An active layer(124) is arranged between the first conductive semiconductor layer and the second conductive semiconductor layer. An electron barrier layer(125-1) is arranged between the active layer and the second conductive semiconductor layer. The electron barrier layer includes at least one current spreading layer(201-1-201-n) having a superlattice structure. The current spreading layer includes a first horizontal transfer layer(210-1-210-n) and a first vertical transfer layer(220-1-220-n).
Abstract translation: 目的：通过促进从第二导电半导体层向有源层移动的孔的水平和垂直转移来提供发光器件以提高发光效率。 构成：在第一导电半导体层（122）上布置第二导电半导体层（126）。 在第一导电半导体层和第二导电半导体层之间布置有源层（124）。 在有源层和第二导电半导体层之间布置有电子势垒层（125-1）。 电子势垒层包括具有超晶格结构的至少一个电流扩展层（201-1-201-n）。 当前扩展层包括第一水平传输层（210-1-210-n）和第一垂直传输层（220-1-220-n）。
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公开(公告)号：KR1020120045120A
公开(公告)日：2012-05-09
申请号：KR1020100106455
申请日：2010-10-29
Applicant: 엘지이노텍 주식회사
Inventor： 한대섭
Abstract: PURPOSE: A light emitting device is provided to easily generate white light by controlling power of green light, blue light, and red light. CONSTITUTION: A first conductivity type semiconductor layer(122) is formed on a substrate. An active layer(124) is formed on the first conductivity type semiconductor layer. A second conductivity type semiconductor layer(126) is formed on the active layer. The active layer comprises a first quantum well layer, a first tunneling barrier layer, a quantum dot layer(QD) which has a plurality of quantum dots, a second tunneling barrier layer, and a second quantum well layer. The first quantum well layer, the quantum dot layer, and the second quantum well layer have different energy band gaps from each other.
Abstract translation: 目的：提供一种发光装置，通过控制绿光，蓝光和红光的功率容易地产生白光。 构成：在基板上形成第一导电型半导体层（122）。 在第一导电类型半导体层上形成有源层（124）。 在有源层上形成第二导电型半导体层（126）。 有源层包括第一量子阱层，第一隧道势垒层，具有多个量子点的量子点层（QD），第二隧道势垒层和第二量子阱层。 第一量子阱层，量子点层和第二量子阱层具有彼此不同的能带隙。
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公开(公告)号：KR1020120019598A
公开(公告)日：2012-03-07
申请号：KR1020100082878
申请日：2010-08-26
Applicant: 엘지이노텍 주식회사
CPC classification number: H01L33/06 , H01L33/025 , H01L33/32
Abstract: PURPOSE: A light emitting device is provided to improve internal quantum efficiency by increasing the concentration of holes in a quantum well. CONSTITUTION: A first conductive semiconductor layer is formed on a substrate. An active layer of a multiple quantum well structure is formed on the first conductive semiconductor layer. A second conductive semiconductor layer is formed on the active layer. A quantum wall of the active layer is made of InGaN. An energy band gap of the quantum wall decreases from a direction of the first conductive semiconductor layer to a direction of the second conductive semiconductor layer.
Abstract translation: 目的：提供一种发光器件，通过增加量子阱中的空穴浓度来提高内部量子效率。 构成：在基板上形成第一导电半导体层。 在第一导电半导体层上形成多量子阱结构的有源层。 在有源层上形成第二导电半导体层。 有源层的量子壁由InGaN制成。 量子壁的能带隙从第一导电半导体层的方向向第二导电半导体层的方向减小。
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公开(公告)号：KR1020120018584A
公开(公告)日：2012-03-05
申请号：KR1020100081516
申请日：2010-08-23
Applicant: 엘지이노텍 주식회사
CPC classification number: H01L33/04 , H01L33/007 , H01L33/0075
Abstract: PURPOSE: A light emitting device is provided to increase optical extraction efficiency by forming an incline around a light emitting device. CONSTITUTION: A first conductive semiconductor layer(110) is formed on a substrate(100). A super-lattice layer(120) is formed on the first conductive semiconductor layer. An active layer(130) is formed on the super-lattice layer. A second conductive semiconductor layer(140) is formed on the active layer. A first electrode(170) and a second electrode(180) are formed in the first conductive semiconductor layer and the second conductive semiconductor layer.
Abstract translation: 目的：提供一种发光器件，通过在发光器件周围形成倾斜来提高光学提取效率。 构成：在基板（100）上形成第一导电半导体层（110）。 超晶格层（120）形成在第一导电半导体层上。 在超晶格层上形成有源层（130）。 在有源层上形成第二导电半导体层（140）。 第一电极（170）和第二电极（180）形成在第一导电半导体层和第二导电半导体层中。
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公开(公告)号：KR102239624B1
公开(公告)日：2021-04-12
申请号：KR1020140135773
申请日：2014-10-08
Applicant: 엘지이노텍 주식회사
Abstract: 실시예는제1 도전형반도체층, 상기제1 도전형반도체층상에배치되는활성층, 상기활성층상에배치되는제2 도전형반도체층, 및상기활성층과상기제2 도전형반도체층사이에배치되는전자차단층을포함하며, 상기전자차단층은 1회이상교대로배치되는제1층및 제2층을포함하며상기제1층은인듐을포함하는질화물반도체층이고, 상기제2층은알루미늄을포함하는질화물반도체층이고, 상기제1층은 p형도펀트가도핑된다.
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