公开(公告)号：KR102071345B1

公开(公告)日：2020-01-31

申请号：KR1020180047335

申请日：2018-04-24

Applicant: 한국에너지기술연구원

Inventor： 송형준 ,  강기환 ,  송희은 ,  이정인 ,  강민구

IPC: H01L31/05 ,  H01L31/02 ,  H01L31/0465 ,  H01L31/0224 ,  H01L31/049 ,  H01L31/0203

公开(公告)号：KR1020140016446A

公开(公告)日：2014-02-10

申请号：KR1020120081217

申请日：2012-07-25

Applicant: 한국에너지기술연구원

Inventor： 송희은 ,  강민구 ,  이정철 ,  강기환

IPC: H01L31/042 ,  H01L31/18

CPC classification number: Y02E10/50 ,  Y02P70/521 ,  H01L31/18 ,  H01L31/042

Abstract: The present invention relates to a manufacturing method for a silicon solar cell, more particularly, the present invention comprises a step of (a) forming patterns by using a masking paste which makes an opening on a front surface of a silicon substrate which is doped by a first conductivity type impurity in the position corresponding to the location of an electrode of the silicon solar cell, a step of (b) drying out the printed doping paste which includes a second conductivity type impurity in a first are of the surface of the silicon substrate that is exposed by the opening, a step of (c) removing the patterns, a step of (d) forming a first emitter layer by applying a first heat treatment to the silicon substrate, and to diffuse the second conductivity type impurity including the doping paste through the first area to inside of the silicon substrate, and a step of (e) forming a second emitter layer by applying a second heat treatment to the silicon substrate in order to dope the second conductivity type impurity. By these steps of the present invention, it may prevent the phenomenon of the deposited doping paste to be widely spreaded by using the patterns so that it can further maintain and reduce the contact resistance caused between the electrode of the surface and the emitter payer.

Abstract translation: 硅太阳能电池的制造方法技术领域本发明涉及一种硅太阳能电池的制造方法，更具体地，本发明包括以下步骤：（a）通过使用掩模膏形成图案，该掩模膏在硅衬底的前表面上形成开口， 在对应于硅太阳能电池的电极的位置的位置的第一导电型杂质，（b）将包含第一导电型杂质的印刷掺杂浆料干燥出来的步骤是在硅的表面上 由开口曝光的衬底，（c）去除图案的步骤，（d）通过对硅衬底进行第一热处理形成第一发射极层并扩散包括第二导电类型杂质的步骤 通过所述第一区域掺杂到所述硅衬底的内部，以及（e）通过对所述硅衬底施加第二热处理以形成所述第二发射极层以便掺杂所述第二发射极层的步骤 nd电导型杂质。 通过本发明的这些步骤，可以通过使用图案来防止沉积的掺杂浆料的现象得到广泛的扩展，从而可以进一步保持并降低在表面电极和发射体支付器之间产生的接触电阻。