公开(公告)号：KR100937599B1

公开(公告)日：2010-01-20

申请号：KR1020070132314

申请日：2007-12-17

Applicant: 한국전자통신연구원

Inventor： 권오균 ,  서동우 ,  표정형 ,  김경옥

IPC: H01L21/20

CPC classification number: H01L21/76267 ,  H01L21/76283

Abstract: 반도체 장치 및 그 형성 방법이 제공된다. 상기 방법은 기판 내에 국부적으로 매몰 절연막을 형성하는 단계를 포함한다. 상기 기판을 식각하여 상기 매몰 절연막을 노출하는 개구부를 형성하여, 상기 매몰 절연막 상에 적어도 일 방향으로 상기 기판으로부터 이격된 실리콘 패턴이 형성된다. 상기 실리콘 패턴을 둘러싸는 제 1 절연막이 형성된다.
국부 소이 구조, 매몰 절연막

公开(公告)号：KR1020090064929A

公开(公告)日：2009-06-22

申请号：KR1020070132314

申请日：2007-12-17

Applicant: 한국전자통신연구원

Inventor： 권오균 ,  서동우 ,  표정형 ,  김경옥

IPC: H01L21/20

CPC classification number: H01L21/76267 ,  H01L21/76283

Abstract: A semiconductor device and a forming method thereof are provided to integrate various kinds of semiconductor devices on the same substrate by using a local SOI(Silicon On Insulator) structure. An ion implantation mask is formed on an upper surface of a substrate(110). A buried insulating layer(155) is locally formed within the substrate. An ion implantation layer is formed by performing an ion implantation process using the ion implantation mask. A buried insulating layer is locally formed within the substrate by performing a thermal process. An opening for exposing the buried insulating layer is formed by etching the substrate. A silicon pattern(145) separated from the substrate is formed in at least one direction on the buried insulating layer. A first insulating layer is formed to surround the silicon pattern.

Abstract translation: 提供半导体器件及其形成方法，以通过使用局部SOI（绝缘体上硅）结构将各种半导体器件集成在同一衬底上。 在基板（110）的上表面上形成离子注入掩模。 掩埋绝缘层（155）局部地形成在衬底内。 通过使用离子注入掩模进行离子注入工艺来形成离子注入层。 通过进行热处理，在衬底内局部形成掩埋绝缘层。 通过蚀刻基板形成用于曝光掩埋绝缘层的开口。 在掩埋绝缘层上的至少一个方向上形成与衬底分离的硅图案（145）。 形成第一绝缘层以包围硅图案。

公开(公告)号：KR100875926B1

公开(公告)日：2008-12-26

申请号：KR1020070030355

申请日：2007-03-28

Applicant: 한국전자통신연구원

Inventor： 김덕준 ,  이종무 ,  표정형 ,  김경옥

IPC: G02B6/293 ,  G02B6/28

Abstract: A wavelength multiplexing/demultiplexing optical filter module and a manufacturing method of the same are provided to remove effectively optical coupling loss without forming an additional waveguide. An input-side star coupler of a slap waveguide type is connected to an input waveguide. An arrayed waveguide includes a plurality of individual waveguides having heterogeneous waveguide sections. In the heterogeneous waveguide sections, refractive indexes of waveguide cores are different from each other. The heterogeneous waveguide sections have a length difference therebetween. An output-side star coupler of a slap waveguide type is connected to the arrayed waveguide. One or more output waveguides are connected to the output-side star coupler. The heterogeneous waveguide sections includes a clad of a core(404) having a small refractive index and a clad of a core(403) having a large refractive index.

Abstract translation: 提供一种波长复用/解复用光学滤波器模块及其制造方法，以有效地去除光学耦合损耗而不形成额外的波导。 耳式波导类型的输入侧星形耦合器连接到输入波导。 阵列波导包括具有不同波导部分的多个单独波导。 在异质波导段中，波导芯的折射率彼此不同。 异质波导段之间具有长度差异。 波导型的输出侧星形耦合器连接到阵列波导。 一个或多个输出波导连接到输出侧星形耦合器。 异质波导部分包括具有小折射率的纤芯（404）的包层和具有大折射率的纤芯（403）的包层。

公开(公告)号：KR100785786B1

公开(公告)日：2007-12-13

申请号：KR1020060076364

申请日：2006-08-11

Applicant: 한국전자통신연구원

Inventor： 이종무 ,  김덕준 ,  표정형 ,  김경옥

IPC: G02B6/10 ,  G02B6/124

CPC classification number: G02B6/12028 ,  G02B6/12011

Abstract: A silicon array waveguide grating device is provided to reduce a temperature dependency of the AWG(Arrayed Waveguide Grating) device by adjusting an effective refractive index for respective regions of the waveguide. A silicon array waveguide grating device includes an input waveguide(20) and a first coupler(22). The first coupler is connected to one end of the input waveguide. A silicon array waveguide(24) is connected to one end of the first coupler. The silicon array waveguide includes plural waveguides. The waveguide includes a straight portion(LR) and a curved portion(CR). The curved portion has a minimum curvature. A second coupler(26) is coupled with one end of the waveguide. An output waveguide(28) is connected to one end of the second coupler.

Abstract translation: 提供硅阵列波导光栅器件以通过调整波导的各个区域的有效折射率来降低AWG（阵列波导光栅）器件的温度依赖性。 硅阵列波导光栅器件包括输入波导（20）和第一耦合器（22）。 第一耦合器连接到输入波导的一端。 硅阵列波导（24）连接到第一耦合器的一端。 硅阵列波导包括多个波导。 波导包括直线部分（LR）和弯曲部分（CR）。 弯曲部分具有最小曲率。 第二耦合器（26）与波导的一端耦合。 输出波导（28）连接到第二耦合器的一端。