公开(公告)号：KR1020050025383A

公开(公告)日：2005-03-14

申请号：KR1020030062413

申请日：2003-09-06

Applicant: 한국전자통신연구원

Inventor： 하승철 ,  김용신 ,  양윤석 ,  김용준 ,  양해식 ,  김윤태

IPC: G01N27/416

CPC classification number: G01N27/128

Abstract: A sensor and a method for manufacturing the same are provided to minimize a size of the sensor and to allow the sensor to have a superior endurance against a temperature. A sensor includes a semiconductor substrate(320) having a well(310). A side wall of the well is insulated. A bottom of the well(310) is a membrane(330) such as an insulation layer. A sensor material(340) is positioned in the well(310). An electrical characteristic of the sensor material(340) is changed according to physical quantity to be detected. A heating device(360) is positioned at the membrane(330) in order to uniformly maintain the temperature of the sensor material(340). An electrode(350) measures the electrical characteristic of the sensor material(340) by contacting with the sensor material(340). An insulation layer is formed between the semiconductor substrate(320) and the electrode(350).

Abstract translation: 提供传感器及其制造方法以使传感器的尺寸最小化，并允许传感器具有优于耐温度的耐久性。 传感器包括具有阱（310）的半导体衬底（320）。 井的侧壁是绝缘的。 孔（310）的底部是诸如绝缘层的膜（330）。 传感器材料（340）位于井（310）中。 传感器材料（340）的电特性根据要检测的物理量而改变。 加热装置（360）位于膜（330）处，以便均匀地保持传感器材料（340）的温度。 电极（350）通过与传感器材料（340）接触来测量传感器材料（340）的电特性。 在半导体衬底（320）和电极（350）之间形成绝缘层。