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    FORMATION OF SiOC THIN FILMS
    21.
    发明申请
    FORMATION OF SiOC THIN FILMS 审中-公开

    公开(公告)号：US20200273697A1

    公开(公告)日：2020-08-27

    申请号：US16811258

    申请日：2020-03-06

    Applicant: ASM IP Holding B.V.

    Inventor： Toshiya Suzuki ,  Viljami J. Pore ,  Hannu Huotari

    IPC: H01L21/02 ,  C23C16/32 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455

    Abstract: Methods for depositing silicon oxycarbide (SiOC) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that does not comprise nitrogen and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOC films having improved acid-based wet etch resistance.

    Formation of SiOC thin films
    22.
    发明授权
    Formation of SiOC thin films 有权

    公开(公告)号：US10600637B2

    公开(公告)日：2020-03-24

    申请号：US15588026

    申请日：2017-05-05

    Applicant: ASM IP Holding B.V.

    Inventor： Toshiya Suzuki ,  Viljami J. Pore ,  Hannu Huotari

    IPC: C23C16/30 ,  C23C16/455 ,  H01L21/02 ,  C23C16/32 ,  C23C16/40 ,  C23C16/44

    Abstract: Methods for depositing silicon oxycarbide (SiOC) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that does not comprise nitrogen and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOC films having improved acid-based wet etch resistance.

    Process for deposition of titanium oxynitride for use in integrated circuit fabrication
    23.
    发明授权
    Process for deposition of titanium oxynitride for use in integrated circuit fabrication 有权

    公开(公告)号：US10546744B2

    公开(公告)日：2020-01-28

    申请号：US16268260

    申请日：2019-02-05

    Applicant: ASM IP Holding B.V.

    Inventor： Viljami J. Pore ,  Seiji Okura ,  Hidemi Suemori

    IPC: H01L21/02 ,  H01L21/311 ,  C23C16/30 ,  C23C16/455 ,  H01L21/28 ,  H01L21/033

    Abstract: A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.

    Process for deposition of titanium oxynitride for use in integrated circuit fabrication
    24.
    发明授权
    Process for deposition of titanium oxynitride for use in integrated circuit fabrication 有权

    公开(公告)号：US10460928B2

    公开(公告)日：2019-10-29

    申请号：US15996062

    申请日：2018-06-01

    Applicant: ASM IP Holding B.V.

    Inventor： Viljami J. Pore ,  Seiji Okura ,  Hidemi Suemori

    IPC: H01L21/02 ,  H01L21/311 ,  C23C16/30 ,  C23C16/455 ,  H01L21/28 ,  H01L21/033

    Abstract: A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.

    Vapor phase deposition of organic films
    25.
    发明授权
    Vapor phase deposition of organic films 有权

    公开(公告)号：US10343186B2

    公开(公告)日：2019-07-09

    申请号：US15070594

    申请日：2016-03-15

    Applicant: ASM IP HOLDING B.V.

    Inventor： Viljami J. Pore ,  Marko Tuominen ,  Hannu Huotari

    IPC: C23C16/455 ,  B05D1/00 ,  B05D1/36 ,  C23C16/30 ,  H01L21/02 ,  B05D3/14

    Abstract: Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve. Deposition reactors conducive to depositing organic films are provided.

    Deposition of boron and carbon containing materials
    28.
    发明授权
    Deposition of boron and carbon containing materials 有权
    沉积含硼和碳的材料

    公开(公告)号：US09576790B2

    公开(公告)日：2017-02-21

    申请号：US14686595

    申请日：2015-04-14

    Applicant: ASM IP HOLDING B.V.

    Inventor： Viljami J. Pore ,  Yosuke Kimura ,  Kunitoshi Namba ,  Wataru Adachi ,  Hideaki Fukuda ,  Werner Knaepen ,  Dieter Pierreux ,  Bert Jongbloed

    IPC: H01L21/02 ,  C23C16/04 ,  C23C16/30 ,  C23C16/32 ,  C23C16/455 ,  H01L21/311

    CPC classification number: H01L21/02112 ,  C23C16/045 ,  C23C16/30 ,  C23C16/32 ,  C23C16/45523 ,  C23C16/45525 ,  C23C16/45531 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/2254 ,  H01L21/31111

    Abstract: Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B, C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. One or more of the boron and carbon containing films can have a thickness of less than about 30 angstroms. Methods of doping a semiconductor substrate are provided. Doping a semiconductor substrate can include depositing a boron and carbon film over the semiconductor substrate by exposing the substrate to a vapor phase boron precursor at a process temperature of about 300° C. to about 450° C., where the boron precursor includes boron, carbon and hydrogen, and annealing the boron and carbon film at a temperature of about 800° C. to about 1200° C.

    Abstract translation: 提供了沉积硼和碳的膜的方法。 在一些实施例中，提供了沉积具有所需性质（诸如保形性和蚀刻速率）的B，C膜的方法。 一种或多种含硼和/或碳的前体可以在低于约400℃的温度下在基材上分解。含硼和碳的一种或多种膜可以具有小于约30埃的厚度。 提供掺杂半导体衬底的方法。 掺杂半导体衬底可以包括通过在大约300℃至大约450℃的工艺温度下将衬底暴露于气相硼前体而在半导体衬底上沉积硼和碳膜，其中硼前体包括硼， 碳和氢，并在约800℃至约1200℃的温度下退火硼和碳膜。

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