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    DARK FIELD DIGITAL HOLOGRAPHIC MICROSCOPE AND ASSOCIATED METROLOGY METHOD
    21.
    发明申请
    DARK FIELD DIGITAL HOLOGRAPHIC MICROSCOPE AND ASSOCIATED METROLOGY METHOD 有权

    公开(公告)号：US20230044632A1

    公开(公告)日：2023-02-09

    申请号：US17787244

    申请日：2020-10-21

    Applicant: ASML Netherlands B.V.

    Inventor： Willem Marie Julia Marcel COENE ,  Arie Jeffrey DEN BOEF ,  Vasco Tomas TENNER ,  Nitesh PANDEY ,  Christos MESSINIS ,  Johannes Fitzgerald DE BOER

    IPC: G03H1/08 ,  G03H1/26

    Abstract: A dark field digital holographic microscope is disclosed which is configured to determine a characteristic of interest of a structure. The dark field digital holographic microscope comprises an illumination device configured to provide at least: a first beam pair comprising a first illumination beam of radiation (1010) and a first reference beam of radiation (1030) and a second beam pair comprising a second illumination beam of radiation (1020) and a second reference beam of radiation (1040); and one or more optical elements (1070) operable to capture a first scattered radiation and to capture a second scattered radiation scattered by the structure resultant from the first and second illumination beams respectively. The beams of the first beam pair are mutually coherent and the beams of the second beam pair are mutually coherent. The illumination device is configured to impose incoherence (ADI) between the first beam pair and second beam pair.

    PHASE MODULATORS IN ALIGNMENT TO DECREASE MARK SIZE
    22.
    发明申请
    PHASE MODULATORS IN ALIGNMENT TO DECREASE MARK SIZE 有权

    公开(公告)号：US20220397833A1

    公开(公告)日：2022-12-15

    申请号：US17633884

    申请日：2020-08-05

    Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

    Inventor： Franciscus Godefridus Casper BIJNEN ,  Muhsin ERALP ,  Simon Reinald HUISMAN ,  Arie Jeffrey DEN BOEF

    IPC: G03F9/00

    Abstract: An alignment apparatus includes an illumination system configured to direct one or more illumination beams towards an alignment target and receive the diffracted beams from the alignment target. The alignment apparatus also includes a self-referencing Interferometer configured to generate two diffraction sub-beams, wherein the two diffraction sub-beams are orthogonally polarized, rotated 180 degrees with respect to each other around an alignment axis, and spatially overlapped. The alignment apparatus further includes a beam analyzer configured to generate interference between the overlapped components of the diffraction sub-beams and produce two orthogonally polarized optical branches, and a detection system configured to determine a position of the alignment target based on light intensity measurement of the optical branches, wherein the measured light intensity is temporally modulated by a phase modulator.

    Method of Measuring a Structure, Inspection Apparatus, Lithographic System and Device Manufacturing Method
    25.
    发明申请
    Method of Measuring a Structure, Inspection Apparatus, Lithographic System and Device Manufacturing Method 审中-公开

    公开(公告)号：US20200183290A1

    公开(公告)日：2020-06-11

    申请号：US16792267

    申请日：2020-02-16

    Applicant: ASML Netherlands B.V.

    Inventor： Gonzalo Roberto SANGUINETTI ,  Murat BOZKURT ,  Maurits VAN DER SCHAAR ,  Arie Jeffrey DEN BOEF

    IPC: G03F7/20 ,  G01B11/27

    Abstract: Overlay error of a lithographic process is measured using a plurality of target structures, each target structure having a known overlay bias. A detection system captures a plurality of images (740) representing selected portions of radiation diffracted by the target structures under a plurality of different capture conditions (λ1, λ2). Pixel values of the captured images are combined (748) to obtain one or more synthesized images (750). A plurality of synthesized diffraction signals are extracted (744) from the synthesized image or images, and used to calculate a measurement of overlay. The computational burden is reduced compared with extracting diffraction signals from the captured images individually. The captured images may be dark-field images or pupil images, obtained using a scatterometer.

    METROLOGY METHOD, COMPUTER PRODUCT AND SYSTEM
    26.
    发明申请
    METROLOGY METHOD, COMPUTER PRODUCT AND SYSTEM 审中-公开

    公开(公告)号：US20200103762A1

    公开(公告)日：2020-04-02

    申请号：US16700381

    申请日：2019-12-02

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Arie Jeffrey DEN BOEF ,  Kaustuve BHATTACHARYYA

    IPC: G03F7/20 ,  G01B11/24 ,  G01B11/27

    Abstract: A method including determining a type of structural asymmetry of the target from measured values of the target, and performing a simulation of optical measurement of the target to determine a value of an asymmetry parameter associated with the asymmetry type. A method including performing a simulation of optical measurement of a target to determine a value of an asymmetry parameter associated with a type of structural asymmetry of the target determined from measured values of the target, and analyzing a sensitivity of the asymmetry parameter to change in a target formation parameter associated with the target. A method including determining a structural asymmetry parameter of a target using a measured parameter of radiation diffracted by the target, and determining a property of a measurement beam of the target based on the structural asymmetry parameter that is least sensitive to change in a target formation parameter associated with the target.

    Diffraction Based Overlay Metrology Tool and Method of Diffraction Based Overlay Metrology
    30.
    发明申请
    Diffraction Based Overlay Metrology Tool and Method of Diffraction Based Overlay Metrology 审中-公开

    公开(公告)号：US20170350829A1

    公开(公告)日：2017-12-07

    申请号：US15683280

    申请日：2017-08-22

    Applicant: ASML Netherlands B.V.

    Inventor： Arie Jeffrey DEN BOEF

    IPC: G01N21/956 ,  G03F7/20

    Abstract: Systems, methods, and apparatus are provided for determining overlay of a pattern on a substrate with a mask pattern defined in a resist layer on top of the pattern on the substrate. A first grating is provided under a second grating, each having substantially identical pitch to the other, together forming a composite grating. A first illumination beam is provided under an angle of incidence along a first horizontal direction. The intensity of a diffracted beam from the composite grating is measured. A second illumination beam is provided under the angle of incidence along a second horizontal direction. The second horizontal direction is opposite to the first horizontal direction. The intensity of the diffracted beam from the composite grating is measured. The difference between the diffracted beam from the first illumination beam and the diffracted beam from the second illumination beam, linearly scaled, results in the overlay error.

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