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    PATTERNING DEVICE, A METHOD OF MAKING THE SAME, AND A PATTERNING DEVICE DESIGN METHOD
    21.
    发明申请
    PATTERNING DEVICE, A METHOD OF MAKING THE SAME, AND A PATTERNING DEVICE DESIGN METHOD 有权

    公开(公告)号：US20220004094A1

    公开(公告)日：2022-01-06

    申请号：US17477765

    申请日：2021-09-17

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Duan-Fu Stephen HSU ,  Jingjing LIU

    IPC: G03F1/36

    Abstract: A patterning device, includes: an absorber layer on a patterning device substrate; and a reflective or transmissive layer on the patterning device substrate, wherein the absorber layer and the reflective or transmissive layer together define a pattern layout having a main feature and an attenuated sub-resolution assist feature paired with the main feature, wherein: the main feature is configured to generate, upon transferring the device pattern to a layer of patterning material on a substrate, the main feature in the layer of patterning material, and upon the transferring the pattern to the layer of patterning material, the attenuated sub-resolution assist feature is configured to avoid generating a feature in the layer of patterning material and to produce a different radiation intensity than the main feature.

    METHOD TO CREATE THE IDEAL SOURCE SPECTRA WITH SOURCE AND MASK OPTIMIZATION
    23.
    发明申请
    METHOD TO CREATE THE IDEAL SOURCE SPECTRA WITH SOURCE AND MASK OPTIMIZATION 有权

    公开(公告)号：US20210349404A1

    公开(公告)日：2021-11-11

    申请号：US17283056

    申请日：2019-10-11

    Applicant: ASML NETHERLANDS B.V. ,  CYMER, LLC

    Inventor： Willard Earl CONLEY ,  Joshua Jon THORNES ,  Duan-Fu Stephen HSU ,  Gregory Allen RECHTSTEINER

    IPC: G03F7/20

    Abstract: Systems, methods, and computer programs for increasing a depth of focus for a lithography system are disclosed. In one aspect, a method includes providing an optical spectrum, a mask pattern, and a pupil design, that together are configured to provide the lithography system with a depth of focus. The method also includes iteratively varying the optical spectrum and an assist feature in the mask pattern to provide a modified optical spectrum and a modified mask pattern that increases the depth of focus. The method further includes configuring a component of the lithography system based on the modified optical spectrum and the modified mask pattern that increases the depth of focus.

    FLOWS OF OPTIMIZATION FOR LITHOGRAPHIC PROCESSES
    24.
    发明申请
    FLOWS OF OPTIMIZATION FOR LITHOGRAPHIC PROCESSES 审中-公开

    公开(公告)号：US20180341186A1

    公开(公告)日：2018-11-29

    申请号：US16036732

    申请日：2018-07-16

    Applicant: ASML Netherlands B.V.

    Inventor： Duan-Fu Stephen HSU ,  Rafael C. HOWELL ,  Xiaofeng LIU

    IPC: G03F7/20 ,  G03F1/36 ,  G03F1/70

    Abstract: A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus having an illumination system and projection optics, the method including: obtaining an illumination source shape and a mask defocus value; optimizing a dose of the lithographic process; and optimizing the portion of the design layout for each of a plurality of slit positions of the illumination source.

    RULE-BASED DEPLOYMENT OF ASSIST FEATURES
    26.
    发明申请
    RULE-BASED DEPLOYMENT OF ASSIST FEATURES 审中-公开

    公开(公告)号：US20170329235A1

    公开(公告)日：2017-11-16

    申请号：US15512540

    申请日：2015-09-23

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Duan-Fu Stephen HSU ,  Kurt E. WAMPLER

    IPC: G03F7/20 ,  G03F1/36

    CPC classification number: G03F7/70441 ,  G03F1/36 ,  G03F7/70125

    Abstract: Methods of reducing a pattern displacement error, contrast loss, best focus shift, and/or tilt of a Bossung curve, of a portion of a design layout used in a patterning process for imaging that portion onto a substrate using a lithographic apparatus. The methods include determining or adjusting one or more characteristics of one or more assist features using one or more rules based on one or more parameters selected from: one or more characteristics of one or more design features in the portion, one or more characteristics of the patterning process, one or more characteristics of the lithographic apparatus, and/or a combination selected from the foregoing.

    FLOWS OF OPTIMIZATION FOR LITHOGRAPHIC PROCESSES
    28.
    发明申请
    FLOWS OF OPTIMIZATION FOR LITHOGRAPHIC PROCESSES 有权
    优化过程的流程

    公开(公告)号：US20170038692A1

    公开(公告)日：2017-02-09

    申请号：US15303199

    申请日：2015-02-13

    Applicant: ASML Netherlands B.V.

    Inventor： Duan-Fu Stephen HSU ,  Rafael C. HOWELL ,  Xiaofeng LIU

    IPC: G03F7/20

    CPC classification number: G03F7/70641 ,  G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70191 ,  G03F7/70433 ,  G03F7/70441 ,  G03F7/705 ,  G03F7/70558

    Abstract: A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus having an illumination system and projection optics, the method including: obtaining an illumination source shape and a mask defocus value; optimizing a dose of the lithographic process; and optimizing the portion of the design layout for each of a plurality of slit positions of the illumination source.

    Abstract translation: 一种改进用于使用具有照明系统和投影光学器件的光刻投影装置将设计布局的一部分成像到基板上的光刻工艺的方法，所述方法包括：获得照明源形状和掩模散焦值; 优化光刻工艺的剂量; 以及优化所述照明源的多个狭缝位置中的每一个的所述设计布局的所述部分。

    THERMAL CONTROL SYSTEMS, MODELS, AND MANUFACTURING PROCESSES IN LITHOGRAPHY
    29.
    发明申请
    THERMAL CONTROL SYSTEMS, MODELS, AND MANUFACTURING PROCESSES IN LITHOGRAPHY 有权

    公开(公告)号：US20250028298A1

    公开(公告)日：2025-01-23

    申请号：US18713127

    申请日：2022-11-30

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Duan-Fu Stephen HSU ,  Gerui LIU ,  Wenjie JIN ,  Dezheng SUN

    IPC: G05B19/4093

    Abstract: Dynamic aberration control in a semiconductor manufacturing process is described. In some embodiments, wavefront data representing a wavefront provided by an optical projection system of a semiconductor processing apparatus may be received. Wavefront drift may be determined based on a comparison of the wavefront data and target wavefront data. Based on the wavefront drift, one or more process parameters may be determined. The one or more process parameters include parameters associated with a thermal device, where the thermal device is configured to provide thermal energy to the optical projection system during operation.

    IMAGING VIA ZEROTH ORDER SUPPRESSION
    30.
    发明公开
    IMAGING VIA ZEROTH ORDER SUPPRESSION 审中-公开

    公开(公告)号：US20240219843A1

    公开(公告)日：2024-07-04

    申请号：US18532977

    申请日：2023-12-07

    Applicant: ASML Netherlands B.V.

    Inventor： Johannes Jacobus Matheus BASELMANS ,  Duan-Fu Stephen HSU ,  Willem Jan BOUMAN ,  Frank Jan TIMMERMANS ,  Marie-Claire VAN LARE

    IPC: G03F7/00

    CPC classification number: G03F7/70308

    Abstract: Apparatuses and techniques for suppressing a zeroth order portion of a configured radiation beam. In some embodiments, an extreme ultraviolet (EUV) lithographic apparatus for forming an image on a substrate by use of an EUV radiation beam that is configured by a patterning device comprising a pattern of reflective regions and partially reflective regions, wherein the partially reflective regions are configured to suppress and apply a phase shift to a portion of the EUV radiation beam, may include a projection system. The projection system may be configured to suppress a zeroth order portion of a configured EUV radiation beam, and direct an unsuppressed portion of a configured EUV radiation beam towards a substrate to form an image on the substrate.

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