公开(公告)号：US20240184218A1

公开(公告)日：2024-06-06

申请号：US18441772

申请日：2024-02-14

Applicant: ASML Netherlands B.V.

Inventor： Nitesh PANDEY ,  Arie Jeffrey DEN BOEF ,  Duygu AKBULUT ,  Marinus Johannes Maria VAN DAM ,  Hans BUTLER ,  Hugo Augustinus Joseph CRAMER ,  Engelbertus Antonius Fransiscus VAN DER PASCH ,  Ferry ZIJP ,  Jeroen Arnoldus Leonardus Johannes RAAYMAKERS ,  Marinus Petrus REIJNDERS

IPC: G03F7/00 ,  G01N21/956

CPC classification number: G03F7/70625 ,  G01N21/956 ,  G03F7/7015 ,  G03F7/70633

Abstract: A metrology tool for determining a parameter of interest of a structure fabricated on a substrate, the metrology tool comprising: an illumination optical system for illuminating the structure with illumination radiation under a non-zero angle of incidence; a detection optical system comprising a detection optical sensor and at least one lens for capturing a portion of illumination radiation scattered by the structure and transmitting the captured radiation towards the detection optical sensor, wherein the illumination optical system and the detection optical system do not share an optical element.

公开(公告)号：US20220326625A1

公开(公告)日：2022-10-13

申请号：US17836066

申请日：2022-06-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Bert VERSTRAETEN ,  Hugo Augustinus Joseph CRAMER ,  Thomas THEEUWES

IPC: G03F7/20

Abstract: A method of evaluating a patterning process, the method including: obtaining the result of a first measurement of a first metrology target; obtaining the result of a second measurement of a second metrology target, the second metrology target having a structural difference from the first metrology target that generates a sensitivity difference and/or an offset, of a process parameter of the patterning process between the first and second metrology targets; and determining a value pertaining to the patterning process based on the results of the first and second measurements.

公开(公告)号：US20210384086A1

公开(公告)日：2021-12-09

申请号：US17408043

申请日：2021-08-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Adriaan Johan VAN LEEST ,  Anagnostis TSIATMAS ,  Paul Christiaan HINNEN ,  Elliott Gerard MC NAMARA ,  Alok VERMA ,  Thomas THEEUWES ,  Hugo Augustinus Joseph CRAMER

IPC: H01L21/66 ,  G03F7/20 ,  G03F9/00 ,  G01N21/95

Abstract: A method of determining overlay of a patterning process, the method including: obtaining a detected representation of radiation redirected by one or more physical instances of a unit cell, wherein the unit cell has geometric symmetry at a nominal value of overlay and wherein the detected representation of the radiation was obtained by illuminating a substrate with a radiation beam such that a beam spot on the substrate was filled with the one or more physical instances of the unit cell; and determining, from optical characteristic values from the detected radiation representation, a value of a first overlay for the unit cell separately from a second overlay for the unit cell that is also obtainable from the same optical characteristic values, wherein the first overlay is in a different direction than the second overlay or between a different combination of parts of the unit cell than the second overlay.

公开(公告)号：US20200073254A1

公开(公告)日：2020-03-05

申请号：US16675674

申请日：2019-11-06

Applicant: ASML Netherlands B.V.

Inventor： Maurits VAN DER SCHAAR ,  Youping ZHANG ,  Hendrik Jan Hidde SMILDE ,  Anagnostis TSIATMAS ,  Adriaan Johan VAN LEEST ,  Alok VERMA ,  Thomas THEEUWES ,  Hugo Augustinus Joseph CRAMER ,  Paul Christiaan HINNEN

IPC: G03F7/20 ,  G01N21/47 ,  G01N21/95

Abstract: A substrate has first and second target structures formed thereon by a lithographic process. Each target structure has two-dimensional periodic structure formed in a single material layer on a substrate using first and second lithographic steps, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount that is close to one half of a spatial period of the features formed in the first lithographic step, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount close to one half of said spatial period and different to the first bias amount. An angle-resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained, and a measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.

公开(公告)号：US20190250094A1

公开(公告)日：2019-08-15

申请号：US16268564

申请日：2019-02-06

Applicant: ASML NETHERLANDS B.V.

Inventor： Nitesh PANDEY ,  Zili ZHOU ,  Gerbrand VAN DER ZOUW ,  Arie Jeffrey DEN BOEF ,  Markus Gerardus Martinus Maria VAN KRAAIJ ,  Armand Eugene Albert KOOLEN ,  Hugo Augustinus Joseph CRAMER ,  Paul Christiaan HINNEN ,  Martinus Hubertus Maria VAN WEERT ,  Anagnostis TSIATMAS ,  Shu-jin WANG ,  Bastiaan Onne FAGGINGER AUER ,  Alok VERMA

IPC: G01N21/21 ,  G01N21/88 ,  G03F7/20

CPC classification number: G01N21/21 ,  G01N21/8806 ,  G01N2021/8848 ,  G03F7/70191 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633

Abstract: An inspection apparatus, method, and system are described herein. An example inspection apparatus includes an optical system and an imaging system. The optical system may be configured to output an illumination beam incident on a target including one or more features, the illumination beam polarized with a first polarization when incident on the target. The imaging system may be configured to obtain intensity data representing at least a portion of the illumination beam scattered by the one or more features, where the portion of the illumination beam has a second polarization orthogonal to the first polarization. The inspection apparatus may be further configured to generate image data representing an image of each of the feature(s) based on the intensity data, and determine a measurement of a parameter of interest associated with the feature(s) based on an amount of the portion of the illumination beam having the second polarization.

公开(公告)号：US20180335704A1

公开(公告)日：2018-11-22

申请号：US15970858

申请日：2018-05-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Hugo Augustinus Joseph CRAMER

IPC: G03F7/20 ,  G01B11/26

CPC classification number: G03F7/70616 ,  G03F7/70625 ,  G03F7/70633 ,  G03F9/7007

Abstract: Methods and apparatuses for measuring a target formed on a substrate. The target includes an alignment structure and a metrology structure. In one method, a first measurement process is performed that includes illuminating the target with first radiation and detecting radiation resulting from scattering of the first radiation from the target. A second measurement process includes illuminating the target with second radiation and detecting radiation resulting from scattering of the second radiation from the target. The first measurement process detects a position of the alignment structure. The second measurement process uses the position of the alignment structure detected by the first measurement process to align a radiation spot of the second radiation onto a desired location within the metrology structure.

公开(公告)号：US20160154319A1

公开(公告)日：2016-06-02

申请号：US14906898

申请日：2014-08-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Seyed Iman MOSSAVAT ,  Hugo Augustinus Joseph CRAMER ,  Willem Jan GROOTJANS ,  Adriaan Johan VAN LEEST

IPC: G03F7/20

CPC classification number: G03F7/705 ,  G01N21/956 ,  G01N21/95607 ,  G03F7/70625 ,  G03F9/7092

Abstract: Methods and inspection apparatus and computer program products for assessing a quality of reconstruction of a value of a parameter of interest of a structure, which may be applied for example in metrology of microscopic structures. It is important the reconstruction provides a value of a parameter of interest (e.g. a CD) of the structure which is accurate as the reconstructed value is used to monitor and/or control a lithographic process. This is a way of assessing a quality of reconstruction (803) of a value of a parameter of interest of a structure which does not require the use of a scanning electron microscope, by predicting (804) values of the parameter of interest of structures using reconstructed values of parameters of structures, and by comparing (805) the predicted values of the parameter of interest and the reconstructed values of the parameter of interest.

Abstract translation: 用于评估结构的感兴趣参数的值的重建质量的方法和检查装置和计算机程序产品，其可以应用于例如微观结构的计量学。 重要的是，重建提供了结构的关注参数（例如CD）的值，该值是精确的，因为重建值用于监视和/或控制光刻过程。 这是通过预测（804）结构的感兴趣的参数的值来评估不需要使用扫描电子显微镜的结构的感兴趣参数的值的重建质量（803）的方法， 通过比较（805）感兴趣参数的预测值和感兴趣参数的重建值，重建结构参数值。

公开(公告)号：US20160026096A1

公开(公告)日：2016-01-28

申请号：US14753642

申请日：2015-06-29

Applicant: ASML Netherlands B.V.

Inventor： Alok VERMA ,  Hugo Augustinus Joseph CRAMER

IPC: G03F7/20 ,  G01N21/47

CPC classification number: G03F7/70558 ,  G01N21/4738 ,  G01N21/4785 ,  G01N2021/4735 ,  G03F7/70625 ,  G03F7/70683 ,  G03F7/7085

Abstract: A method of determining exposure dose of a lithographic apparatus used in a lithographic process on a substrate, the method comprising the steps: (a) receiving a substrate comprising first and second structures produced using the lithographic process; (b) detecting scattered radiation while illuminating the first structure with radiation to obtain a first scatterometer signal; (c) detecting scattered radiation while illuminating the second structure with radiation to obtain a second scatterometer signal; (d) using the first and second scatterometer signals to determine an exposure dose value used to produce said first and second structures wherein the first structure has a first periodic characteristic with spatial characteristics and yet at least another second periodic characteristic with spatial characteristics designed to be affected by the exposure dose and the second structure has a first periodic characteristic with spatial characteristics and yet at least another second periodic characteristic with spatial characteristics designed to be affected by the exposure dose wherein the exposure dose affects the exposure dose affected spatial characteristics of the first and second structures in a different manner.

Abstract translation: 一种确定在光刻工艺中使用的光刻设备在衬底上的曝光剂量的方法，所述方法包括以下步骤：（a）接收包含使用光刻工艺制备的第一和第二结构的衬底; （b）在用辐射照射第一结构的同时检测散射的辐射以获得第一散射仪信号; （c）在用辐射照射第二结构的同时检测散射的辐射，以获得第二散射仪信号; （d）使用第一和第二散射仪信号来确定用于产生所述第一和第二结构的曝光剂量值，其中所述第一结构具有具有空间特性的第一周期特性，并且至少另外具有空间特性的另一第二周期特性被设计为 受曝光剂量的影响，第二结构具有空间特性的第一周期性特征，而至少具有设计为受曝光剂量影响的空间特征的另一第二周期特性，其中曝光剂量影响曝光剂量影响第一 和第二结构以不同的方式。

公开(公告)号：US20140139814A1

公开(公告)日：2014-05-22

申请号：US14149723

申请日：2014-01-07

Applicant: ASML Netherlands B.V.

Inventor： Hugo Augustinus Joseph CRAMER ,  Arie Jeffrey DEN BOEF ,  Henricus Johanne Lambertus MEGENS ,  Hendrik Jan Hidde SMILDE ,  Adrianus Johanne Hendrikus SCHELLEKENS ,  Michael KUBIS

IPC: G03F7/20 ,  G01N21/88

CPC classification number: G03F7/70641 ,  G01B11/02 ,  G01B11/22 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47 ,  G01N21/88 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065

Abstract: In a method of determining the focus of a lithographic apparatus used in a lithographic process on a substrate, the lithographic process is used to form a structure on the substrate, the structure having at least one feature which has an asymmetry in the printed profile which varies as a function of the focus of the lithographic apparatus on the substrate. A first image of the periodic structure is formed and detected while illuminating the structure with a first beam of radiation. The first image is formed using a first part of non-zero order diffracted radiation. A second image of the periodic structure is formed and detected while illuminating the structure with a second beam of radiation. The second image is formed using a second part of the non-zero order diffracted radiation which is symmetrically opposite to the first part in a diffraction spectrum. The ratio of the intensities of the measured first and second portions of the spectra is determined and used to determine the asymmetry in the profile of the periodic structure and/or to provide an indication of the focus on the substrate. In the same instrument, an intensity variation across the detected portion is determined as a measure of process-induced variation across the structure. A region of the structure with unwanted process variation can be identified and excluded from a measurement of the structure.

Abstract translation: 在确定在基板上的光刻工艺中使用的光刻设备的焦点的方法中，使用光刻工艺在基板上形成结构，该结构具有至少一个特征，该特征在印刷图案中具有不对称性 作为光刻设备在基板上的焦点的函数。 在用第一辐射束照射结构的同时形成和检测周期性结构的第一图像。 第一图像使用非零阶衍射辐射的第一部分形成。 在用第二辐射束照射结构的同时形成和检测周期性结构的第二图像。 使用在衍射光谱中与第一部分对称相对的非零级衍射辐射的第二部分形成第二图像。 确定测量的第一和第二部分光谱的强度的比率并用于确定周期性结构的轮廓的不对称性和/或提供焦点在基底上的指示。 在相同的仪器中，被检测部分的强度变化被确定为整个结构的过程引起的变化的量度。 可以从结构的测量中识别并排除具有不期望的工艺变化的结构区域。

公开(公告)号：US20240345489A1

公开(公告)日：2024-10-17

申请号：US18291534

申请日：2022-06-08

Applicant: ASML Netherlands B.V.

Inventor： Vasco Tomas TENNER ,  Hugo Augustinus Joseph CRAMER ,  Teunis Willem TUKKER ,  Bastiaan Lambertus Wilhelmus Marinus VAN DE VEN

IPC: G03F7/00

CPC classification number: G03F7/706851 ,  G03F7/7065 ,  G03F7/706849

Abstract: Disclosed is a metrology device operable to measure a sample with measurement radiation and associated method. The metrology device comprises: an illumination branch operable to propagate measurement radiation to a sample, a detection branch operable to propagate one or more components of scattered radiation, scattered from said sample as a result of illumination of the sample by said measurement radiation; and a dispersive arrangement in either of said illumination branch or said detection branch. The dispersive arrangement is arranged to maintain one or more components of said scattered radiation at substantially a same respective location in a detection pupil plane over a range of wavelength values for said measurement radiation.