公开(公告)号：EP3714330A1

公开(公告)日：2020-09-30

申请号：EP18796955.5

申请日：2018-11-07

Applicant: ASML Netherlands B.V.

Inventor： NASALEVICH, Maxim Aleksandrovich ,  KURGANOVA, Evgenia ,  NOTENBOOM, Arnoud Willem ,  PÉTER, Mária ,  VAN ZWOL, Pieter-Jan ,  VLES, David Ferdinand

IPC: G03F7/20

公开(公告)号：EP3449312A1

公开(公告)日：2019-03-06

申请号：EP17717149.3

申请日：2017-04-12

Applicant: ASML Netherlands B.V.

Inventor： NASALEVICH, Maxim, Aleksandrovich ,  ABEGG, Erik, Achilles ,  BANERJEE, Nirupam ,  BLAUW, Michiel, Alexander ,  BROUNS, Derk, Servatius, Gertruda ,  JANSSEN, Paul ,  KRUIZINGA, Matthias ,  LENDERINK, Egbert ,  MAXIM, Nicolae ,  NIKIPELOV, Andrey ,  NOTENBOOM, Arnoud, Willem ,  PILIEGO, Claudia ,  PÉTER, Mária ,  RISPENS, Gijsbert ,  SCHUH, Nadja ,  VAN DE KERKHOF, Marcus, Adrianus ,  VAN DER ZANDE, Willem, Joan ,  VAN ZWOL, Pieter-Jan ,  VERBURG, Antonius, Willem ,  VERMEULEN, Johannes, Petrus, Martinus, Bernardus ,  VLES, David, Ferdinand ,  VOORTHUIJZEN, Willem-Pieter ,  ZDRAVKOV, Alexandar, Nikolov

IPC: G03F1/24 ,  G03F1/62 ,  G03F7/20

公开(公告)号：EP3391139A1

公开(公告)日：2018-10-24

申请号：EP16806058.0

申请日：2016-12-02

Applicant: ASML Netherlands B.V. ,  ASML Holding N.V.

Inventor： VLES, David, Ferdinand ,  ABEGG, Erik, Achilles ,  BENDIKSEN, Aage ,  BROUNS, Derk, Servatius, Gertruda ,  GOVIL, Pradeep K. ,  JANSSEN, Paul ,  NASALEVICH, Maxim, Aleksandrovich ,  NOTENBOOM, Arnoud, Willem ,  PÉTER, Mária ,  VAN DE KERKHOF, Marcus, Adrianus ,  VAN DER ZANDE, Willem, Joan ,  VAN ZWOL, Pieter-Jan ,  VERMEULEN, Johannes, Petrus, Martinus, Bernardus ,  VOORTHUIJZEN, Willem-Pieter ,  WILEY, James, Norman

IPC: G03F1/62 ,  G03F7/20 ,  G03F1/22

CPC classification number: G03F1/64 ,  G03F1/22 ,  G03F1/62 ,  G03F7/7085 ,  G03F7/70916 ,  G03F7/70983

Abstract: A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle includes at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle.

公开(公告)号：EP3391138A1

公开(公告)日：2018-10-24

申请号：EP16805430.2

申请日：2016-12-02

Applicant: ASML Netherlands B.V.

Inventor： VAN ZWOL, Pieter-Jan ,  DE GRAAF, Dennis ,  JANSSEN, Paul ,  PÉTER, Mária ,  VAN DE KERKHOF, Marcus Adrianus ,  VAN DER ZANDE, Willem Joan ,  VLES, David Ferdinand ,  VOORTHUIJZEN, Willem-Pieter

IPC: G03F1/24 ,  G03F1/62 ,  G03F7/20

CPC classification number: G03F1/24 ,  G03F1/62 ,  G03F7/70916 ,  G03F7/70983

Abstract: A membrane for EUV lithography, the membrane having a thickness of no more than 200 nm and comprising a stack comprising: at least one silicon layer; and at least one silicon compound layer made of a compound of silicon and an element selected from the group consisting of boron, phosphorous, bromine

公开(公告)号：EP3164764A1

公开(公告)日：2017-05-10

申请号：EP15736224.5

申请日：2015-07-02

Applicant: ASML Netherlands B.V.

Inventor： NIKIPELOV, Andrey, Alexandrovich ,  BANINE, Vadim, Yevgenyevich ,  BENSCHOP, Jozef, Petrus, Henricus ,  BOOGAARD, Arjen ,  DHALLUIN, Florian, Didier, Albin ,  KUZNETSOV, Alexey, Sergeevich ,  PÉTER, Mária ,  SCACCABAROZZI, Luigi ,  VAN DER ZANDE, Willem, Joan ,  VAN ZWOL, Pieter-Jan ,  YAKUNIN, Andrei, Mikhailovich

IPC: G03F7/20 ,  G03F1/00 ,  G03F1/62 ,  G02B5/08 ,  G02B5/20

CPC classification number: G03F1/62 ,  G02B5/1838 ,  G02B5/208 ,  G03F1/24 ,  G03F1/38 ,  G03F7/70191 ,  G03F7/70316 ,  G03F7/70575 ,  G03F7/70891 ,  G03F7/70916 ,  G03F7/70958 ,  G03F7/70983

Abstract: A membrane transmissive to EUV radiation, which may be used as a pellicle or spectral filter in a lithographic apparatus. The membrane includes one or more high doped regions wherein the membrane is doped with a dopant concentration greater than 1017 cm−3, and one or more regions with low (or no) doping. The membrane may have a main substrate having low doping and one or more additional layers, wherein the high doped regions are comprised within some or all of the additional layers.

Abstract translation: 公开了一种透射EUV辐射的膜，其可以用作光刻设备中的薄膜或光谱滤光片。 膜包括一个或多个高掺杂区，其中所述膜掺杂有大于1017cm -3的掺杂剂浓度，以及一个或多个掺杂区低（或不掺杂）的区。 膜可以具有低掺杂的主基板和一个或多个附加层，其中所述高掺杂区包含在所述附加层的一些或全部内。