Abstract:
A lithographic apparatus is disclosed including a liquid supply system configured to at least partly fill a space between the projection system and the substrate with a liquid, an outlet configured to remove a mixture of liquid and gas passing through a gap between a liquid confinement structure of the liquid supply system and the substrate, and an evacuation system configured to draw the mixture through the outlet, the evacuation system having a separator tank arranged to separate liquid from gas in the mixture and a separator tank pressure controller, connected to a non-liquid-filled region of the separator tank, configured to maintain a stable pressure within the non-liquid-filled region.
Abstract:
An exposure apparatus configured to project each of a plurality of radiation beams onto a respective location on a target, the plurality of radiation beams forming a desired dose pattern via a plurality of spot exposures, the nominal position of a characteristic point in the dose distribution of each of the spot exposures lying at points defining a first grid. The apparatus has, or is provided data from, a controller configured to: calculate a target intensity value for each of the plurality of radiation beams to expose the target to the desired dose pattern, the calculation using as input a rasterized representation of the desired dose pattern, the rasterized representation including a dose value defined at each of a plurality of points on a second grid, the first and second grids having the same geometry, and control the exposure apparatus to emit beams with the target intensity values.
Abstract:
Disclosed is a method of improving a measurement of a parameter of interest. The method comprises obtaining metrology data comprising a plurality of measured values of the parameter of interest, relating to one or more targets on a substrate, each measured value relating to a different measurement combination of a target of said one or more targets and a measurement condition used to measure that target and asymmetry metric data relating to asymmetry for said one or more targets. A respective relationship is determined for each of said measurement combinations relating a true value for the parameter of interest to the asymmetry metric data, based on an assumption that there is a common true value for the parameter of interest over said measurement combinations. These relationships are used to improve a measurement of the parameter of interest.
Abstract:
Disclosed is a method of determining a characteristic of interest relating to a structure on a substrate formed by a lithographic process, the method comprising: obtaining an input image of the structure; and using a trained neural network to determine the characteristic of interest from said input image. Also disclosed is a reticle comprising a target forming feature comprising more than two sub-features each having different sensitivities to a characteristic of interest when imaged onto a substrate to form a corresponding target structure on said substrate. Related methods and apparatuses are also described.
Abstract:
Disclosed is a method for obtaining a computationally determined interference electric field describing scattering of radiation by a pair of structures comprising a first structure and a second structure on a substrate. The method comprises determining a first electric field relating to first radiation scattered by the first structure; determining a second electric field relating to second radiation scattered by the second structure; and computationally determining the interference of the first electric field and second electric field, to obtain a computationally determined interference electric field.
Abstract:
A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.
Abstract:
A method of characterizing a deformation of a plurality of substrates is described. The method includes: measuring, for a plurality of n different alignment measurement parameters λ and for a plurality of substrates, a position of the alignment marks; determining a positional deviation as the difference between the n alignment mark position measurements and a nominal alignment mark position; grouping the positional deviations into data sets; determining an average data set; subtracting the average data set from the data sets to obtain a plurality of variable data sets; performing a blind source separation method on the variable data sets, thereby decomposing the variable data sets into a set of eigenwafers representing principal components of the variable data sets; and subdividing the set of eigenwafers into a set of mark deformation eigenwafers and a set of substrate deformation eigenwafers.
Abstract:
A method for converting a vector-based representation of a desired device pattern for an exposure apparatus, a lithography or exposure apparatus, an apparatus and method to provide data to a programmable patterning device, and a device manufacturing method. In an embodiment, the method for converting outputs a rasterized representation of the desired dose pattern of radiation corresponding to the desired device pattern, wherein the vector-based representation includes primitive data identifying one or more primitive patterns; and instance data identifying how at least a portion of the desired device pattern is formed from one or more instances of each identified primitive pattern, the method including forming a rasterized primitive of each primitive pattern identified in the primitive data, and forming the rasterized representation by storing each rasterized primitive in association with the instance data corresponding to that rasterized primitive.
Abstract:
Apparatus, systems, and methods are used for detecting the alignment of a feature on a substrate using a polarization independent interferometer. The apparatus, system, and methods include optical elements that receive light that has diffracted or scattered from a mark on a substrate. The optical elements may split the diffracted light into multiple subbeams of light which are detected by one or more detectors. The diffracted light may be combined optically or during processing after detection. The system may determine alignment and/or overlay based on the received diffracted light having any polarization angle or state.
Abstract:
An alignment sensor for a lithographic apparatus is arranged and constructed to measure an alignment of a movable part of the lithographic apparatus in respect of a stationary part of the lithographic apparatus. The alignment sensor comprises a light source configured to generate a pulse train at a optical wavelength and a pulse repetition frequency, a non-linear optical element, arranged in an optical propagation path of the pulse train, the non-linear optical element configured to transform the pulse train at the optical wavelength into a transformed pulse train in an optical wavelength range, an optical imaging system configured to project the transformed pulse train onto an alignment mark comprising a diffraction grating; a detector to detect a diffraction pattern as diffracted by the diffraction grating, and a data processing device configured to derive alignment data from the detected diffraction pattern as detected by the detector.