Inspection Method and Apparatus, Lithographic System and Device Manufacturing Method
    8.
    发明申请
    Inspection Method and Apparatus, Lithographic System and Device Manufacturing Method 审中-公开
    检验方法和仪器,平版印刷系统和器件制造方法

    公开(公告)号:US20150177166A1

    公开(公告)日:2015-06-25

    申请号:US14416484

    申请日:2013-06-18

    CPC classification number: G01N23/203 G03F7/70058 G03F7/70625 H01J37/26

    Abstract: An inspection method determines values of profile parameters of substrate patterns. A baseline substrate with a baseline pattern target (BP) is produced that has a profile described by profile parameters, for example CD (median critical dimension), SWA (side wall angle) and RH (resist height). Scatterometry is used to obtain first and second signals from first and second targets. Values of differential pattern profile parameters are calculated using a Bayesian differential cost function based on a difference between the baseline pupil and the perturbed pupil and dependence of the pupil on pattern profile parameters. For example, the difference is measured between a baseline process and a perturbed process for stability control of a lithographic process. Fed-forward differential stack parameters are also calculated from observations of stack targets on the same substrates as the pattern targets.

    Abstract translation: 检查方法确定基板图案的轮廓参数的值。 产生具有基线图案目标(BP)的基准基底,其具有通过轮廓参数描述的轮廓,例如CD(中值临界尺寸),SWA(侧壁角)和RH(抗蚀剂高度)。 散射法用于获得第一和第二个目标的第一和第二信号。 使用贝叶斯差分成本函数,基于基线瞳孔和扰动瞳孔之间的差异以及瞳孔对图形轮廓参数的依赖性来计算微分图案轮廓参数的值。 例如,在光刻工艺的稳定性控制的基线工艺和扰动工艺之间测量差异。 前馈差分堆栈参数也是通过与模式目标相同的基板上的堆叠目标的观察来计算的。

    METHOD AND APPARATUS FOR MEASURING ASYMMETRY OF A MICROSTRUCTURE, POSITION MEASURING METHOD, POSITION MEASURING APPARATUS, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD
    9.
    发明申请
    METHOD AND APPARATUS FOR MEASURING ASYMMETRY OF A MICROSTRUCTURE, POSITION MEASURING METHOD, POSITION MEASURING APPARATUS, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD 有权
    用于测量微结构不对称的方法和装置,位置测量方法,位置测量装置,平面设备和装置制造方法

    公开(公告)号:US20150176979A1

    公开(公告)日:2015-06-25

    申请号:US14421434

    申请日:2013-07-17

    Abstract: A lithographic apparatus includes an alignment sensor including a self-referencing interferometer for reading the position of an alignment target comprising a periodic structure. An illumination optical system for focusing radiation into a spot on said structure. An asymmetry detection optical system receives a share of positive and negative orders of radiation diffracted by the periodic structure, and forms first and second images of said spot on first and second detectors respectively, wherein said negative order radiation is used to form the first image and said positive order radiation is used to form the second image. A processor for processing together signals from said first and second detectors representing intensities of said positive and negative orders to produce a measurement of asymmetry in the periodic structure. The asymmetry measurement can be used to improve accuracy of the position read by the alignment sensor.

    Abstract translation: 光刻设备包括对准传感器,其包括用于读取包括周期性结构的对准目标位置的自参考干涉仪。 一种照明光学系统,用于将辐射聚焦到所述结构上的光斑中。 不对称检测光学系统接收通过周期性结构衍射的辐射的正数和负数的共享,并分别在第一和第二检测器上形成所述光斑的第一和第二图像,其中所述负序辐射用于形成第一图像, 所述正阶辐射用于形成第二图像。 用于处理来自所述第一和第二检测器的信号的处理器,其表示所述正序和负序的强度,以产生周期性结构中的不对称性的测量。 可以使用不对称测量来提高由对准传感器读取的位置的精度。

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