公开(公告)号：US20210255548A1

公开(公告)日：2021-08-19

申请号：US17313135

申请日：2021-05-06

Applicant: ASML Netherlands B.V.

Inventor： Venugopal VELLANKI ,  Vivek Kumar JAIN ,  Stefan HUNSCHE

IPC: G03F7/20 ,  G06N20/00 ,  G06F30/398 ,  G03F1/60 ,  G03F1/84

Abstract: A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including: determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.

公开(公告)号：US20200348605A1

公开(公告)日：2020-11-05

申请号：US16931002

申请日：2020-07-16

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus MATHIJSSEN ,  Stefan HUNSCHE ,  Markus Gerardus Martinus Maria VAN KRAAIJ

IPC: G03F7/20 ,  G03F7/213 ,  G03F7/22

Abstract: Disclosed is an inspection apparatus for use in lithography. It comprises a support for a substrate carrying a plurality of metrology targets; an optical system for illuminating the targets under predetermined illumination conditions and for detecting predetermined portions of radiation diffracted by the targets under the illumination conditions; a processor arranged to calculate from said detected portions of diffracted radiation a measurement of asymmetry for a specific target; and a controller for causing the optical system and processor to measure asymmetry in at least two of said targets which have different known components of positional offset between structures and smaller sub-structures within a layer on the substrate and calculate from the results of said asymmetry measurements a measurement of a performance parameter of the lithographic process for structures of said smaller size. Also disclosed are substrates provided with a plurality of novel metrology targets formed by a lithographic process.

公开(公告)号：US20200096871A1

公开(公告)日：2020-03-26

申请号：US16696263

申请日：2019-11-26

Applicant: ASML Netherlands B.V.

Inventor： Venugopal VELLANKI ,  Vivek Kumar JAIN ,  Stefan HUNSCHE

IPC: G03F7/20 ,  G06N20/00 ,  G03F1/60 ,  G03F1/84

Abstract: A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including; determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.

公开(公告)号：US20190147127A1

公开(公告)日：2019-05-16

申请号：US16300380

申请日：2017-04-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Jing SU ,  Yi ZOU ,  Chenxi LIN ,  Stefan HUNSCHE ,  Marinus JOCHEMSEN ,  Yen-Wen LU ,  Lin Lee CHEONG

IPC: G06F17/50 ,  G03F7/20 ,  G06N20/00 ,  G06T7/00

Abstract: Methods of identifying a hot spot from a design layout or of predicting whether a pattern in a design layout is defective, using a machine learning model. An example method disclosed herein includes obtaining sets of one or more characteristics of performance of hot spots, respectively, under a plurality of process conditions, respectively, in a device manufacturing process; determining, for each of the process conditions, for each of the hot spots, based on the one or more characteristics under that process condition, whether that hot spot is defective; obtaining a characteristic of each of the process conditions; obtaining a characteristic of each of the hot spots; and training a machine learning model using a training set including the characteristic of one of the process conditions, the characteristic of one of the hot spots, and whether that hot spot is defective under that process condition.

公开(公告)号：US20190146358A1

公开(公告)日：2019-05-16

申请号：US16300314

申请日：2017-04-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Marinus JOCHEMSEN ,  Scott Anderson MIDDLEBROOKS ,  Stefan HUNSCHE ,  Te-Sheng WANG

IPC: G03F7/20

Abstract: A method including obtaining an image of a plurality of structures on a substrate, wherein each of the plurality of structures is formed onto the substrate by transferring a corresponding pattern of a design layout; obtaining, from the image, a displacement for each of the structures with respect to a reference point for that structure; and assigning each of the structures into one of a plurality of groups based on the displacement.

公开(公告)号：US20170336713A1

公开(公告)日：2017-11-23

申请号：US15533309

申请日：2015-11-13

Applicant: ASML Netherlands B.V.

Inventor： Scott Anderson MIDDLEBROOKS ,  Markus Gerardus Martinus Maria VAN KRAAJI ,  Adrianus Cornelis Matheus KOOPMAN ,  Stefan HUNSCHE ,  Willem Marie Julia Marcel COENE

IPC: G03F7/20 ,  G06T7/12 ,  G06T7/60

CPC classification number: G03F7/705 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/7065 ,  G06T7/12 ,  G06T7/149 ,  G06T7/60 ,  G06T2207/10061 ,  G06T2207/20161 ,  G06T2207/30148

Abstract: A method and apparatus of detection, registration and quantification of an image. The method may include obtaining an image of a lithographically created structure, and applying a level set method to an object, representing the structure, of the image to create a mathematical representation of the structure. The method may include obtaining a first dataset representative of a reference image object of a structure at a nominal condition of a parameter, and obtaining second dataset representative of a template image object of the structure at a non-nominal condition of the parameter. The method may further include obtaining a deformation field representative of changes between the first dataset and the second dataset. The deformation field may be generated by transforming the second dataset to project the template image object onto the reference image object. A dependence relationship between the deformation field and change in the parameter may be obtained.