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公开(公告)号：WO2015090721A1
公开(公告)日：2015-06-25
申请号：PCT/EP2014/074003
申请日：2014-11-07
Applicant: ASML NETHERLANDS B.V.
IPC: G03F7/20
CPC classification number: G03F7/70616 , G03F7/70625 , G03F7/70633
Abstract: Disclosed is a method of correcting an image characteristic of a substrate onto which one or more product features have been formed using a lithographic process, and an associated inspection apparatus method. The method comprises measuring an error in said image characteristic of said substrate; and determining corrections for a subsequent formation of the product features based upon the measured error and a characteristic of one or more of said product feature(s).
Abstract translation: 公开了一种使用光刻工艺校正已经形成了一个或多个产品特征的基板的图像特性的方法，以及相关联的检查装置方法。 该方法包括测量所述衬底的所述图像特性中的误差; 以及基于所测量的误差和一个或多个所述产品特征的特征来确定随后形成所述产品特征的校正。
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公开(公告)号：EP3945367A1
公开(公告)日：2022-02-02
申请号：EP20188802.1
申请日：2020-07-31
Applicant: ASML Netherlands B.V.
Inventor： NIKOLSKI, Pioter , THEEUWES, Thomas , CORRADI, Antonio
IPC: G03F7/20
Abstract: Disclosed is a method of determining a process window within a process space comprising obtaining (630) contour data (635) relating to features to be provided to a substrate (625) across a plurality of layers, for each of a plurality of process conditions (600) associated with providing the features across said plurality of layers, and failure mode data (650) describing constraints on the contour data across the plurality of layers. The failure mode data is applied to the contour data to determine (640) a failure count for each process condition; and the process window is determined by associating each process condition to its corresponding failure count. Also disclosed is a method of determining an actuation constrained subspace of the process window based on actuation constraints imposed by the plurality of actuators.
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公开(公告)号：EP4174577A1
公开(公告)日：2023-05-03
申请号：EP21205825.9
申请日：2021-11-01
Applicant: ASML Netherlands B.V.
Inventor： BASTANI, Vahid , KNOPS, Raoul, Maarten, Simon , THEEUWES, Thomas , URBANCZYK, Adam, Jan , WILDENBERG, Jochem, Sebastiaan , VAN WIJK, Robert Jan
IPC: G03F7/20
Abstract: Disclosed is a method of determining a performance parameter distribution and/or associated quantile function. The method comprises obtaining a quantile function prediction model operable to predict a quantile value for a substrate position and given quantile probability such that the predicted quantile values vary monotonically as a function of quantile probability and using the trained quantile function prediction model to predict quantile values for a plurality of different quantile probabilities for one or more substrate positions.
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公开(公告)号：EP4427097A1
公开(公告)日：2024-09-11
申请号：EP22790548.6
申请日：2022-09-30
Applicant: ASML Netherlands B.V.
Inventor： BASTANI, Vahid , KNOPS, Raoul, Maarten, Simon , THEEUWES, Thomas , URBANCZYK, Adam, Jan , WILDENBERG, Jochem, Sebastiaan , VAN WIJK, Robert Jan
IPC: G03F7/20
CPC classification number: G03F7/705 , G03F7/70625
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公开(公告)号：EP3489756A1
公开(公告)日：2019-05-29
申请号：EP17203287.2
申请日：2017-11-23
Applicant: ASML Netherlands B.V.
Inventor： TSIATMAS, Anagnostis , HINNEN, Paul, Christiaan , MC NAMARA, Elliott, Gerard , THEEUWES, Thomas , DE LA FUENTE VALENTIN, Maria, Isabel , SHAHRJERDY, Mir, Homayoun , DEN BOEF, Arie, Jeffrey , WANG, Shu-jin
IPC: G03F7/20
Abstract: A method including: obtaining a detected representation of radiation redirected by each of a plurality of structures from a substrate additionally having a device pattern thereon, wherein each structure has an intentional different physical configuration of the respective structure than the respective nominal physical configuration of the respective structure, wherein each structure has geometric symmetry at the respective nominal physical configuration, wherein the intentional different physical configuration of the structure causes an asymmetric optical characteristic distribution and wherein a patterning process parameter measures change in the physical configuration; and determining a value, based on the detected representations and based on the intentional different physical configurations, to setup, monitor or correct a measurement recipe for determining the patterning process parameter.
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Patent Agency Ranking26.发明公开
公开(公告)号：EP3279735A1
公开(公告)日：2018-02-07
申请号：EP16182166.5
申请日：2016-08-01
Applicant: ASML Netherlands B.V.
Inventor： THEEUWES, Thomas , CRAMER, Hugo, Augustinus, Joseph
IPC: G03F7/20
CPC classification number: G03F7/70625 , G01N21/956 , G01N2021/95676
Abstract: Disclosed is a method of reconstructing a characteristic of a structure formed on a substrate by a lithographic process, and an associated metrology apparatus. The method comprises combining measured values of a first parameter associated with the lithographic process to obtain an estimated value of the first parameter; and reconstructing at least a second parameter associated with the characteristic of the structure using the estimated value of the first parameter and a measurement of the structure. The combining step may comprise modeling a variation of the first parameter to obtain a parameter model or fingerprint of the first parameter.
Abstract translation: 公开了一种通过光刻工艺重构形成在衬底上的结构的特性的方法，以及相关的度量装置。 该方法包括组合与光刻过程相关联的第一参数的测量值以获得第一参数的估计值; 以及使用所述第一参数的所述估计值和所述结构的测量来重建与所述结构的所述特性相关联的至少第二参数。 组合步骤可以包括对第一参数的变化进行建模以获得第一参数的参数模型或指纹。
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公开(公告)号：EP4285186A1
公开(公告)日：2023-12-06
申请号：EP21844025.3
申请日：2021-12-23
Applicant: ASML Netherlands B.V.
Inventor： THEEUWES, Thomas , WILDENBERG, Jochem, Sebastiaan , ZHANG, Lei , VAN ITTERSUM, Ronald
IPC: G03F7/20
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公开(公告)号：EP3588190A1
公开(公告)日：2020-01-01
申请号：EP18179450.4
申请日：2018-06-25
Applicant: ASML Netherlands B.V.
Abstract: Disclosed is a method for assigning features into at least first features and second features, said first features being for at least one first patterning device configured for use in a lithographic process to form corresponding first structures on a substrate and second features being for at least one second patterning device configured for use in a lithographic process to form corresponding second structures on a substrate, wherein said method comprises assigning said features into said first features and said second features based on a patterning characteristic of the features.
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公开(公告)号：EP3293575A1
公开(公告)日：2018-03-14
申请号：EP16188370.7
申请日：2016-09-12
Applicant: ASML Netherlands B.V.
IPC: G03F7/20
CPC classification number: G03F7/70641 , G03F7/70625 , G03F7/70683
Abstract: A method of evaluating a patterning process, the method including: obtaining the result of a first measurement of a first metrology target; obtaining the result of a second measurement of a second metrology target, the second metrology target having a structural difference from the first metrology target that generates a sensitivity difference and/or an offset, of a process parameter of the patterning process between the first and second metrology targets; and determining, by a computer system, a value pertaining to the patterning process based on the results of the first and second measurements.
Abstract translation: 一种评估构图过程的方法，该方法包括：获得第一度量衡目标的第一测量结果; 获得第二度量衡目标的第二测量结果，第二度量衡目标具有与第一度量衡目标的结构差异，所述第二度量衡量目标产生第一和第二测量目标之间的图案化过程的过程参数的灵敏度差异和/或偏移量 度量衡目标; 以及由计算机系统基于第一和第二测量的结果确定与图案化过程有关的值。
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公开(公告)号：EP4036646A1
公开(公告)日：2022-08-03
申请号：EP21154358.2
申请日：2021-01-29
Applicant: ASML Netherlands B.V.
Inventor： THEEUWES, Thomas , WILDENBERG, Jochem, Sebastiaan , ZHANG, Lei , VAN ITTERSUM, Ronald
IPC: G03F7/20
Abstract: Disclosed is a method of determining a performance parameter or a parameter derived therefrom, the performance parameter being associated with a performance of a lithographic process for forming one or more structures on a substrate subject to the lithographic process. The method comprises obtaining a probability description distribution comprising a plurality of probability descriptions of the performance parameter, each probability description corresponding to a different position on the substrate and decomposing each probability description into a plurality of component probability descriptions to obtain a plurality of component probability description distributions. A component across-substrate-area model is determined for each of said plurality of component probability descriptions, which models its respective component probability description across a substrate area; and a value for said performance parameter or parameter derived therefrom is determined based on the component across-substrate-area models.
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