公开(公告)号：US12130246B2

公开(公告)日：2024-10-29

申请号：US17419653

申请日：2019-12-19

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus Mathijssen ,  Arie Jeffrey Den Boef ,  Kaustuve Bhattacharyya

IPC: G01N23/20 ,  G03F7/00 ,  G06T5/10

CPC classification number: G01N23/20 ,  G03F7/70633 ,  G06T5/10 ,  G06T2207/30148

Abstract: A method includes receiving an image formed in a metrology apparatus wherein the image comprises at least the resulting effect of at least two diffraction orders, and processing the image wherein the processing comprises at least a filtering step, for example a Fourier filter. The process of applying a filter may be obtained also by placing an aperture in the detection branch of the metrology apparatus.

公开(公告)号：US12061421B2

公开(公告)日：2024-08-13

申请号：US17629053

申请日：2020-07-17

Applicant: ASML Netherlands B.V.

Inventor： Arie Jeffrey Den Boef ,  Kaustuve Bhattacharyya ,  Keng-Fu Chang ,  Simon Gijsbert Josephus Mathijssen

IPC: G03F7/00

CPC classification number: G03F7/70633

Abstract: Methods and systems for determining information about a target structure are disclosed. In one arrangement, a value of an asymmetry indicator for the target structure is obtained. The value of the asymmetry indicator represents an amount of an overlay independent asymmetry in the target structure. An error in an initial overlay measurement performed on the target structure at a previous time is estimated. The estimation is performed using the obtained value of the asymmetry indicator and a relationship between values of the asymmetry indicator and overlay measurement errors caused at least partially by overlay independent asymmetries. An overlay in the target structure is determined using the initial overlay measurement and the estimated error.

公开(公告)号：US12013647B2

公开(公告)日：2024-06-18

申请号：US17419648

申请日：2019-12-24

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus Mathijssen ,  Marc Johannes Noot ,  Kaustuve Bhattacharyya ,  Arie Jeffrey Den Boef ,  Grzegorz Grzela ,  Timothy Dugan Davis ,  Olger Victor Zwier ,  Ralph Timotheus Huijgen ,  Peter David Engblom ,  Jan-Willem Gemmink

IPC: G03F7/00 ,  G01N21/47 ,  G06T7/00

CPC classification number: G03F7/70633 ,  G01N21/47 ,  G06T7/0004 ,  G01N2021/4735 ,  G06T2207/30148

Abstract: A method provides the steps of receiving an image from a metrology tool, determining individual units of said image and discriminating the units which provide accurate metrology values. The images are obtained by measuring the metrology target at multiple wavelengths. The discrimination between the units, when these units are pixels in said image, is based on calculating a degree of similarity between said units.

公开(公告)号：US11886125B2

公开(公告)日：2024-01-30

申请号：US17800346

申请日：2021-02-02

Applicant: ASML NETHERLANDS B.V.

Inventor： Simon Gijsbert Josephus Mathijssen ,  Kaustuve Bhattacharyya

IPC: G03F7/00

CPC classification number: G03F7/70625

Abstract: A method of inferring a value for at least one local uniformity metric relating to a product structure, the method including: obtaining intensity data including an intensity image relating to at least one diffraction order obtained from a measurement on a target; obtaining at least one intensity distribution from the intensity image; determining, from the at least one intensity distribution, an intensity indicator expressing a variation of either intensity over the at least one diffraction order, or a difference in intensity between two complimentary diffraction orders over the intensity image; and inferring the value for the at least one local uniformity metric from the intensity indicator.

公开(公告)号：US10788766B2

公开(公告)日：2020-09-29

申请号：US16611500

申请日：2018-03-06

Applicant: ASML Netherlands B.V.

Inventor： Sebastianus Adrianus Goorden ,  Simon Reinald Huisman ,  Duygu Akbulut ,  Alessandro Polo ,  Simon Gijsbert Josephus Mathijssen

IPC: G03B27/54 ,  G03F9/00 ,  G01B11/27 ,  G03F7/20

Abstract: Disclosed is a metrology sensor apparatus and associated method. The metrology sensor apparatus comprises an illumination system operable to illuminate a metrology mark on a substrate with illumination radiation having a first polarization state and an optical collection system configured to collect scattered radiation, following scattering of the illumination radiation by the metrology mark. The metrology mark comprises a main structure and changes, relative to the first polarization state, at least one of a polarization state of a first portion of the scattered radiation predominately resultant from scattering by the main structure and a polarization state of a second portion of radiation predominately resultant from scattering by one or more features other than the main structure, such that the polarization state of the first portion of the scattered radiation is different to the polarization state of the second portion of the scattered radiation. The metrology sensor apparatus further comprises an optical filtering system which filters out the second portion of the scattered radiation based on its polarization state.

公开(公告)号：US10607873B2

公开(公告)日：2020-03-31

申请号：US16086367

申请日：2017-03-23

Applicant: ASML NETHERLANDS B.V.

Inventor： Eric Anthony Janda ,  Cayetano Sánchez-Fabrés Cobaleda ,  Bernd Peter Geh ,  Simon Gijsbert Josephus Mathijssen

IPC: G03F9/00 ,  H01L21/67 ,  H01L21/68 ,  G03F7/20

Abstract: A method including directing, by an optical system, an illumination beam to a surface of a substrate, providing relative motion between the directed illumination beam and the substrate until the directed illumination beam is illuminated on a grating underneath an edge or a notch of the substrate, diffracting, by the grating, at least a portion of the illumination beam, and detecting, by the detector, the diffracted illumination.

公开(公告)号：US10451978B2

公开(公告)日：2019-10-22

申请号：US16010320

申请日：2018-06-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Kaustuve Bhattacharyya ,  Simon Gijsbert Josephus Mathijssen ,  Marc Johannes Noot ,  Arie Jeffrey Den Boef ,  Mohammadreza Hajiahmadi ,  Farzad Farhadzadeh

IPC: G03B27/42 ,  G03F7/20 ,  G01B11/27

Abstract: A method including: for a metrology target, having a first biased target structure and a second differently biased target structure, created using a patterning process, obtaining metrology data including signal data for the first target structure versus signal data for the second target structure, the metrology data being obtained for a plurality of different metrology recipes and each metrology recipe specifying a different parameter of measurement; determining a statistic, fitted curve or fitted function through the metrology data for the plurality of different metrology recipes as a reference; and identifying at least two different metrology recipes that have a variation of the collective metrology data of the at least two different metrology recipes from a parameter of the reference that crosses or meets a certain threshold.

公开(公告)号：US10267744B2

公开(公告)日：2019-04-23

申请号：US15641579

申请日：2017-07-05

Applicant: ASML Netherlands B.V.

Inventor： Patricius Aloysius Jacobus Tinnemans ,  Nan Lin ,  Sander Bas Roobol ,  Simon Gijsbert Josephus Mathijssen

IPC: G02F1/35 ,  G01N21/47 ,  G01N21/88 ,  G01N21/956 ,  G03F7/20

Abstract: Disclosed is an illumination source for generating measurement radiation for an inspection apparatus. The source generates at least first measurement radiation and second measurement radiation such that the first measurement radiation and the second measurement radiation interfere to form combined measurement radiation modulated with a beat component. The illumination source may be a HHG source. Also disclosed is an inspection apparatus comprising such a source and an associated inspection method.

公开(公告)号：US20190107785A1

公开(公告)日：2019-04-11

申请号：US16155424

申请日：2018-10-09

Applicant: ASML Netherlands B.V.

Inventor： Narjes JAVAHERI ,  Mohammadreza Hajiahmadi ,  Murat Bozkurt ,  Alberto Da Costa Assafrao ,  Marc Johannes Noot ,  Simon Gijsbert Josephus Mathijssen ,  Jin Lian

IPC: G03F7/20 ,  G01B11/24 ,  G01B11/30 ,  G01N21/47

Abstract: Disclosed is a method, and associated apparatuses, for measuring a parameter of interest relating to a structure having at least two layers. The method comprises illuminating the structure with measurement radiation and detecting scattered radiation having been scattered by said structure. The scattered radiation comprises normal and complementary higher diffraction orders. A scatterometry model which relates a scattered radiation parameter to at least a parameter of interest and an asymmetry model which relates the scattered radiation parameter to at least one asymmetry parameter are defined, the asymmetry parameter relating to one or more measurement system errors and/or an asymmetry in the target other than a misalignment between the two layers. A combination of the scatterometry model and asymmetry model is used to determine a system of equations, and the system of equations is then solved for the parameter of interest.

公开(公告)号：US09835954B2

公开(公告)日：2017-12-05

申请号：US14892880

申请日：2014-05-02

Applicant: ASML Netherlands B.V.

Inventor： Erik Willem Bogaart ,  Franciscus Godefridus Casper Bijnen ,  Arie Jeffrey Den Boef ,  Simon Gijsbert Josephus Mathijssen

IPC: G03F7/00 ,  G01N21/95 ,  G03F7/20 ,  G01N21/956 ,  G01N21/65

CPC classification number: G03F7/70483 ,  G01N21/9501 ,  G01N21/956 ,  G01N2021/656 ,  G03F7/70625

Abstract: A substrate is provided with device structures and metrology structures (800). The device structures include materials exhibiting inelastic scattering of excitation radiation of one or more wavelengths. The device structures include structures small enough in one or more dimensions that the characteristics of the inelastic scattering are influenced significantly by quantum confinement. The metrology structures (800) include device-like structures (800b) similar in composition and dimensions to the device features, and calibration structures (800a). The calibration structures are similar to the device features in composition but different in at least one dimension. Using an inspection apparatus and method implementing Raman spectroscopy, the dimensions of the device-like structures can be measured by comparing spectral features of radiation scattered inelastically from the device-like structure and the calibration structure.