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公开(公告)号：US09611539B2
公开(公告)日：2017-04-04
申请号：US13749791
申请日：2013-01-25
Applicant: APPLIED MATERIALS, INC.
Inventor： Zhenbin Ge , Alan Ritchie , Adolph Miller Allen
CPC classification number: C23C14/35 , C23C14/046 , C23C14/345 , C23C14/3492 , C23C14/351 , H01J37/32706 , H01J37/3299 , H01J37/3405
Abstract: Methods and apparatus for depositing a metal-containing layer on a substrate are provided herein. In some embodiments, a method of processing a substrate in a physical vapor deposition (PVD) chamber includes applying RF power at a VHF frequency to a target comprising a metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas; optionally applying a DC power to the target to direct the plasma towards the target; sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms; and controlling the plasma sheath voltage between the plasma and the substrate to form a metal-containing layer having a desired crystal structure and or desired morphology on feature structures.
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公开(公告)号：US12136544B2
公开(公告)日：2024-11-05
申请号：US17865144
申请日：2022-07-14
Applicant: Applied Materials, Inc.
Inventor： Anthony Chih-Tung Chan , Adolph Miller Allen , Mehul Chauhan , Goichi Yoshidome
Abstract: Methods and apparatus for generating a magnetic field external to a physical vapor deposition (PVD) chamber to improve etch or deposition uniformity on a substrate disposed inside of the PVD chamber are provided herein. In some embodiments, a process chamber, includes a chamber body defining an interior volume therein; a pedestal disposed in the interior volume for supporting a substrate; a coil disposed in the interior volume above the pedestal; and an external magnet assembly, comprising: a housing coupled to the chamber body; and a plurality of magnets disposed external to the chamber body coupled to the housing and arranged asymmetrically about the chamber body.
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公开(公告)号：US20230222264A1
公开(公告)日：2023-07-13
申请号：US17571370
申请日：2022-01-07
Applicant: APPLIED MATERIALS, INC.
Inventor： Rohit Mahakali , Elizabeth Kathryn Neville , Adolph Miller Allen , Xiaoxiong Yuan , Weize Hu , Karthik Ramanathan
CPC classification number: G06F30/27 , H01L21/67276 , H01L21/67155 , H01L21/67248
Abstract: A method includes receiving, from sensors, sensor data associated with processing a substrate via a processing chamber of substrate processing equipment. The sensor data includes a first subset received from one or more first sensors and a second subset received from one or more second sensors, the first subset being mapped to the second subset. The method further includes identifying model input data and model output data. The model output data is output from a physics-based model based on model input data. The method further includes training a machine learning model with data input including the first subset and the model input data, and target output data including the second subset and the model output data to tune calibration parameters of the machine learning model. The calibration parameters are to be used by the physics-based model to perform corrective actions associated with the processing chamber.
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24.发明授权公开(公告)号：US10858727B2
公开(公告)日：2020-12-08
申请号：US15600247
申请日：2017-05-19
Applicant: Applied Materials, Inc.
Inventor： Jingjing Liu , Zhong Qiang Hua , Adolph Miller Allen , Michael W. Stowell , Srinivas D. Nemani , Chentsau Ying , Bhargav Citla , Viachslav Babayan , Andrej Halabica
IPC: H01J37/34 , C23C14/06 , C23C14/35 , H01J37/32 , C23C14/54 , H01L21/311 , H01L21/02 , H01L21/033 , C23C14/34
Abstract: A deposited amorphous carbon film includes at least 95% carbon. A percentage of sp3 carbon-carbon bonds present in the amorphous carbon film exceeds 30%, and a hydrogen content of the amorphous carbon film is less than 5%. A process of depositing amorphous carbon on a workpiece includes positioning the workpiece within a process chamber and positioning a magnetron assembly adjacent to the process chamber. The magnetron assembly projects a magnetic field into the process chamber. The method further includes providing a carbon target such that the magnetic field extends through the carbon target toward the workpiece. The method further includes providing a source gas to the process chamber, and providing pulses of DC power to a plasma formed from the source gas within the process chamber. The pulses of DC power are supplied in pulses of 40 microseconds or less, that repeat at a frequency of at least 4 kHz.
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25.发明授权公开(公告)号：US10763090B2
公开(公告)日：2020-09-01
申请号：US15237414
申请日：2016-08-15
Applicant: Applied Materials, Inc.
Inventor： Adolph Miller Allen , Lara Hawrylchak , Zhigang Xie , Muhammad M. Rasheed , Rongjun Wang , Xianmin Tang , Zhendong Liu , Tza-Jing Gung , Srinivas Gandikota , Mei Chang , Michael S. Cox , Donny Young , Kirankumar Savandaiah , Zhenbin Ge
Abstract: Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.
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Patent Agency Ranking
公开(公告)号：US10347475B2
公开(公告)日：2019-07-09
申请号：US14846951
申请日：2015-09-07
Applicant: Applied Materials, Inc.
Inventor： Kathleen Scheible , Michael Allen Flanigan , Goichi Yoshidome , Adolph Miller Allen , Christopher Pavloff
IPC: H01J37/34 , H01L21/687 , C23C14/34 , C23C14/50
Abstract: A holding assembly for retaining a deposition ring about a periphery of a substrate support in a substrate processing chamber, the deposition ring comprising a peripheral recessed pocket with a holding post. The holding assembly comprises a restraint beam capable of being attached to the substrate support, the restraint beam comprising two ends, and an anti-lift bracket. The anti-lift bracket comprises a block comprising a through-channel to receive an end of a restraint beam, and a retaining hoop attached to the block, the retaining hoop sized to slide over and encircle the holding post in the peripheral recessed pocket of the deposition ring.
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27.发明授权公开(公告)号：US10266940B2
公开(公告)日：2019-04-23
申请号：US15050409
申请日：2016-02-22
Applicant: APPLIED MATERIALS, INC.
Inventor： Zhenbin Ge , Vivek Gupta , Adolph Miller Allen , Ryan Hanson
Abstract: In some embodiments a method of depositing a metal-containing layer atop a substrate disposed in a physical vapor deposition (PVD) chamber includes: providing a plasma forming gas to a processing region of the PVD chamber; providing a first amount of RF power to a target assembly disposed opposite the substrate to form a plasma within the processing region of the PVD chamber; sputtering source material from the target assembly to deposit a metal-containing layer onto the substrate, wherein the source material is at a first erosion state; and tuning an auto capacitance tuner coupled to a substrate support while sputtering source material to maintain an ion energy at a surface of the substrate within a predetermined range as the target erodes from the first erosion state to a second erosion state.
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公开(公告)号：US09991101B2
公开(公告)日：2018-06-05
申请号：US14725527
申请日：2015-05-29
Applicant: APPLIED MATERIALS, INC.
Inventor： William Johanson , Brij Datta , Fuhong Zhang , Adolph Miller Allen , Yu Y. Liu , Prashanth Kothnur
CPC classification number: H01J37/3405 , C23C14/35 , H01J37/3452 , H01J37/3455 , H01J37/3461
Abstract: Methods and apparatus for a magnetron assembly are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis and rotatable about the central axis, a closed loop magnetic pole coupled to a first surface of the shunt plate and disposed 360 degrees along a peripheral edge of the shunt plate, and an open loop magnetic pole coupled at a the first surface of the shunt plate wherein the open loop magnetic pole comprises two rows of magnets disposed about the central axis.
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公开(公告)号：US09660185B2
公开(公告)日：2017-05-23
申请号：US15157120
申请日：2016-05-17
Applicant: Applied Materials, Inc.
Inventor： Roman Gouk , Steven Verhaverbeke , Alexander Kontos , Adolph Miller Allen , Kevin Moraes
IPC: B44C1/22 , H01L43/12 , G11B5/74 , G11B5/855 , H01F41/34 , H01L21/285 , H01L21/308
CPC classification number: H01L43/12 , G11B5/746 , G11B5/855 , G11C11/16 , H01F41/34 , H01L21/2855 , H01L21/3081
Abstract: A method and apparatus for forming a magnetic layer having a pattern of magnetic properties on a substrate is described. The method includes using a metal nitride hardmask layer to pattern the magnetic layer by plasma exposure. The metal nitride layer is patterned using a nanoimprint patterning process with a silicon oxide pattern negative material. The pattern is developed in the metal nitride using a halogen and oxygen containing remote plasma, and is removed after plasma exposure using a caustic wet strip process. All processing is done at low temperatures to avoid thermal damage to magnetic materials.
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公开(公告)号：US20150380223A1
公开(公告)日：2015-12-31
申请号：US14846951
申请日：2015-09-07
Applicant: Applied Materials, Inc.
Inventor： Kathleen Scheible , Michael Allen Flanigan , Goichi Yoshidome , Adolph Miller Allen , Christopher Pavloff
IPC: H01J37/34
CPC classification number: H01J37/3488 , C23C14/3407 , C23C14/50 , H01J37/34 , H01J37/3441 , H01J37/3447 , H01L21/68735
Abstract: A holding assembly for retaining a deposition ring about a periphery of a substrate support in a substrate processing chamber, the deposition ring comprising a peripheral recessed pocket with a holding post. The holding assembly comprises a restraint beam capable of being attached to the substrate support, the restraint beam comprising two ends, and an anti-lift bracket. The anti-lift bracket comprises a block comprising a through-channel to receive an end of a restraint beam, and a retaining hoop attached to the block, the retaining hoop sized to slide over and encircle the holding post in the peripheral recessed pocket of the deposition ring.
Abstract translation: 一种保持组件，用于在衬底处理室中保持沉积环周围的衬底支撑件的周边，所述沉积环包括具有保持柱的外围凹槽。 保持组件包括能够附接到基板支撑件的约束梁，包括两个端部的约束梁和防起重托架。 防起重托架包括一个块体，该块体包括用于接纳约束梁的一端的通道，以及附着在该块上的保持环箍，该保持箍的尺寸适于在保持杆的外周凹槽中滑动并围绕 沉积环。
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