公开(公告)号：ES2131081T3

公开(公告)日：1999-07-16

申请号：ES93106028

申请日：1993-04-14

Applicant: CANON KK

Inventor： MATSUDA KOICHI ,  SANO MASAFUMI ,  MURAKAMI TSUTOMU

IPC: H01L31/04 ,  H01L31/0376 ,  H01L31/065 ,  H01L31/075 ,  H01L31/076

Abstract: A pin junction photovoltaic device comprising a substrate and a pin junction semiconductor active layer region disposed on said substrate, said pin junction semiconductor active layer region comprising a p-type semiconductor layer (105) composed of a p-type non-single crystalline semiconductor material, an i-type semiconductor layer composed of an i-type non-single crystalline semiconductor material, and an n-type semiconductor layer (103) composed of an n-type non-single crystalline semiconductor material, characterized in that (a) a buffer layer (118) comprising a non-single crystalline silicon semiconductor material substantially not containing germanium atoms is interposed between said p-type semiconductor layer and said i-type semiconductor layer, (b) a buffer layer (117) comprising a non-single crystalline silicon semiconductor material substantially not containing germanium atoms is interposed between said i-type semiconductor layer and said n-type semiconductor layer, and said i-type semiconductor layer is formed of an amorphous silicon germanium semiconductor material containing the germanium atoms in an amount of 20 to 70 atomic % in the entire region in which the concentration distribution of the germanium atoms in the thickness direction is varied while providing a maximum concentration point.

公开(公告)号：AT178432T

公开(公告)日：1999-04-15

申请号：AT93106028

申请日：1993-04-14

Applicant: CANON KK

Inventor： MATSUDA KOICHI ,  SANO MASAFUMI ,  MURAKAMI TSUTOMU

IPC: H01L31/04 ,  H01L31/0376 ,  H01L31/065 ,  H01L31/075 ,  H01L31/076

Abstract: A pin junction photovoltaic device comprising a substrate and a pin junction semiconductor active layer region disposed on said substrate, said pin junction semiconductor active layer region comprising a p-type semiconductor layer (105) composed of a p-type non-single crystalline semiconductor material, an i-type semiconductor layer composed of an i-type non-single crystalline semiconductor material, and an n-type semiconductor layer (103) composed of an n-type non-single crystalline semiconductor material, characterized in that (a) a buffer layer (118) comprising a non-single crystalline silicon semiconductor material substantially not containing germanium atoms is interposed between said p-type semiconductor layer and said i-type semiconductor layer, (b) a buffer layer (117) comprising a non-single crystalline silicon semiconductor material substantially not containing germanium atoms is interposed between said i-type semiconductor layer and said n-type semiconductor layer, and said i-type semiconductor layer is formed of an amorphous silicon germanium semiconductor material containing the germanium atoms in an amount of 20 to 70 atomic % in the entire region in which the concentration distribution of the germanium atoms in the thickness direction is varied while providing a maximum concentration point.

公开(公告)号：CA2102948C

公开(公告)日：1998-10-27

申请号：CA2102948

申请日：1993-11-12

Applicant: CANON KK

Inventor： SAITO KEISHI ,  AOIKE TATSUYUKI ,  SANO MASAFUMI ,  NIWA MITSUYUKI ,  HAYASHI RYO ,  TONOGAKI MASAHIKO

IPC: H01L31/0392 ,  H01L31/052 ,  H01L31/065 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20

Abstract: The present invention is directed to provide a photovoltaic element in which the open-circuit voltage and the carrier range of holes are improved by preventing the recombination of photoexcited carriers. The photovoltaic element composed of a p-type layer, an i-type layer of a lamination structure consisting of an i-type layer by RFPCVD on the p-type layer side and an i-type layer by microwave (.mu.W) PCVD on the n-type layer side, or an i-type layer by microwave (.mu.w) PCVD on the p-type layer side and an i-type layer by RFPCVD on the n-type layer side, characterized in that the i-type layer by .mu.WPCVD is one formed by a .mu.WPCVD in which a lower .mu.W energy and a higher RF energy than .mu.W energy to decompose source gas at 100% are simultaneously applied to a source gas containing Si and Ge at a pressure of 50mTorr or less, such that the minimum values of bandgap is biased toward the p-type layer side off the center of the i-type layer, and the i-type layer by RFPCVD is one formed 30nm thick or less by a RFPCVD using a source gas containing a silicon containing gas at a deposition rate of 2nm/sec or less.

公开(公告)号：ES2054666T3

公开(公告)日：1994-08-16

申请号：ES87303341

申请日：1987-04-15

Applicant: CANON KK

Inventor： SANO MASAFUMI

IPC: C23C16/02 ,  C23C16/04 ,  C23C16/24 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C30B25/02 ,  C30B28/14 ,  C30B29/06 ,  H01L21/205

公开(公告)号：BRPI0517568A

公开(公告)日：2008-10-14

申请号：BRPI0517568

申请日：2005-11-09

Applicant: CANON KK ,  TOKYO INST TECH

Inventor： SANO MASAFUMI ,  NAKAGAWA KATSUMI ,  HOSONO HIDEO ,  KAMIYA TOSHIO ,  NOMURA KENJI

IPC: H01L29/786 ,  H01L21/363 ,  H01L21/428

Abstract: A novel amorphous oxide film applicable, for example, to an active layer of a TFT is provided. The amorphous oxide film has an electron carrier concentration of less than 10 18 /cm 3 at a temperature of 25° C, wherein the amorphous oxide is any one selected from the group consisting of an oxide containing In, Zn, and Sn; an oxide containing In and Zn; an oxide containing In and Sn; and an oxide containing In, Zn, and Ga. The oxide comprises one type of element or a plurality of elements selected from the group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, and P; or at least one element selected from the group consisting of Ti, Ru, and F.

公开(公告)号：DE69617854T2

公开(公告)日：2002-05-16

申请号：DE69617854

申请日：1996-09-25

Applicant: CANON KK

Inventor： SANO MASAFUMI ,  SAITO KEISHI

IPC: H01L31/052 ,  H01L31/18 ,  H01L31/20

Abstract: A method for producing a photovoltaic device comprises a base member (190) comprising a substrate (100) and a superposingly formed thereon a reflecting layer (101) and a reflection enhancing layer (102), and a pin structure formed of an n-type (103), i-type (104) and p-type (105) semiconductor layers containing silicon atoms and being non-single crystal as crystal structure, the pin structure being repeated at least once on said base member. The method comprises the steps of (a) depositing a material constituting the reflecting layer, at a substrate temperature of from 200 to 500 DEG C to form the reflecting layer; (b) lowering after the step (a) the substrate temperature to 100 DEG C or below; and (c) depositing after the step (b) a material constituting the reflection enhancing layer, on the reflecting layer at a substrate temperature of from 200 to 400 DEG C to form the reflection enhancing layer.

公开(公告)号：AU729609B2

公开(公告)日：2001-02-08

申请号：AU3604897

申请日：1997-08-27

Applicant: CANON KK

Inventor： SANO MASAFUMI ,  NAKAMURA TETSURO

IPC: H01L31/052 ,  H01L31/056 ,  H01L31/076 ,  H01L31/20 ,  H01L31/0392 ,  H01L31/075

Abstract: In a photovoltaic device having a plurality of pin structures, the pin structures comprise a first pin structure, a second pin structure and a third pin structure in the order from the light-incident side, each having an i-type semiconductor layer, and the i-type semiconductor layer of the first pin structure comprises amorphous silicon, the i-type semiconductor layer of the second pin structure comprises microcrystalline silicon and the i-type semiconductor layer of the third pin structure comprises amorphous silicon germanium or microcrystalline silicon germanium. The photovoltaic device according to the present invention provides a superior photoelectric conversion efficiency and less causing photo-deterioration.

公开(公告)号：DE69329328D1

公开(公告)日：2000-10-05

申请号：DE69329328

申请日：1993-11-15

Applicant: CANON KK

Inventor： SAITO KEISHI ,  AOIKE TATSUYUKI ,  SANO MASAFUMI ,  NIWA MITSUYUKI ,  HAYASHI RYO ,  TONOGAKI MASAHIKO

IPC: H01L31/0392 ,  H01L31/052 ,  H01L31/065 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20

Abstract: The present invention is directed to provide a photovoltaic element in which the open-circuit voltage and the carrier range of holes are improved by preventing the recombination of photoexcited carriers. The photovoltaic element composed of a p-type layer, an i-type layer of a lamination structure consisting of an i-type layer by RFPCVD on the p-type layer side and an i-type layer by microwave ( mu W) PCVD on the n-type layer side, or an i-type layer by microwave ( mu W) PCVD on the p-type layer side and an i-type layer by RFPCVD on the n-type layer side, characterized in that the i-type layer by mu WPCVD is one formed by a mu WPCVD in which a lower mu W energy and a higher RF energy than mu W energy to decompose source gas at 100% are simultaneously applied to a source gas containing Si and Ge at a pressure of 50mTorr or less, such that the minimum values of bandgap is biased toward the p-type layer side off the center of the i-type layer, and the i-type layer by RFPCVD is one formed 30nm thick or less by a RFPCVD using a source gas containing a silicon containing gas at a deposition rate of 2nm/sec or less.

公开(公告)号：DE69324183D1

公开(公告)日：1999-05-06

申请号：DE69324183

申请日：1993-04-14

Applicant: CANON KK

Inventor： MATSUDA KOICHI ,  SANO MASAFUMI ,  MURAKAMI TSUTOMU

IPC: H01L31/04 ,  H01L31/0376 ,  H01L31/065 ,  H01L31/075 ,  H01L31/076

Abstract: A pin junction photovoltaic device comprising a substrate and a pin junction semiconductor active layer region disposed on said substrate, said pin junction semiconductor active layer region comprising a p-type semiconductor layer (105) composed of a p-type non-single crystalline semiconductor material, an i-type semiconductor layer composed of an i-type non-single crystalline semiconductor material, and an n-type semiconductor layer (103) composed of an n-type non-single crystalline semiconductor material, characterized in that (a) a buffer layer (118) comprising a non-single crystalline silicon semiconductor material substantially not containing germanium atoms is interposed between said p-type semiconductor layer and said i-type semiconductor layer, (b) a buffer layer (117) comprising a non-single crystalline silicon semiconductor material substantially not containing germanium atoms is interposed between said i-type semiconductor layer and said n-type semiconductor layer, and said i-type semiconductor layer is formed of an amorphous silicon germanium semiconductor material containing the germanium atoms in an amount of 20 to 70 atomic % in the entire region in which the concentration distribution of the germanium atoms in the thickness direction is varied while providing a maximum concentration point.

公开(公告)号：CA1335242C

公开(公告)日：1995-04-18

申请号：CA564839

申请日：1988-04-22

Applicant: CANON KK

Inventor： AOIKE TATSUYUKI ,  SANO MASAFUMI ,  YOSHINO TAKEHITO ,  KARIYA TOSHIMITSU ,  NIINO HIROAKI

IPC: G03G5/082

Abstract: There is provided an improved light receiving member for electrophotography which is made up of an aluminum support and a multilayered light receiving layer exhibiting photoconductivity formed on said aluminum support, wherein said multilayered light receiving layer consists of a lower layer in contact with said support and an upper layer, said lower layer being made of an inorganic material containing at least aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H), and having a part in which said aluminum atoms (Al), silicon atoms (Si), and hydrogen atoms (H) are unevenly distributed across the layer thickness, said upper layer being made of a non-single-crystal material composed of silicon atoms (Si) as the matrix and at least either of hydrogen atoms (H) or halogen atoms (X), and containing at least either of germanium atoms or tin atoms in a layer region in contact with said lower layer. The light receiving member for electrophotography exhibits outstanding electric characteristics, optical characteristics, photoconductive characteristics, durability, image characteristics, and adaptability to use environments.