公开(公告)号：CA2056087C

公开(公告)日：1998-01-27

申请号：CA2056087

申请日：1991-11-25

Applicant: CANON KK

Inventor： MORISHITA MASAKAZU ,  OHZU HAYAO ,  SUGAWA SHIGETOSHI ,  HASHIMOTO SEIJI

IPC: H01L27/146 ,  H01L31/10 ,  H04N5/335 ,  H04N5/349 ,  H04N5/353 ,  H04N5/357 ,  H04N5/363 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  H01L27/148 ,  B41J2/015

Abstract: A photoelectric converting device provided with a control electrode area of a semiconductor of a first conductive type and at least two main electrode areas of a semiconductor of a second conductive type different from the first conductive type, and capable of accumulating photo-generated carriers in the control electrode area. The control electrode area becomes substantially depleted at the resetting operation.

公开(公告)号：DE69127644D1

公开(公告)日：1997-10-23

申请号：DE69127644

申请日：1991-03-01

Applicant: CANON KK

Inventor： YAMANOBE MASATO ,  SUGAWA SHIGETOSHI

IPC: H01L27/146 ,  H01L31/107

Abstract: A photoelectric transfer device comprises a light-absorbing layer which absorbs incident light to generate carriers a multiplying layer which multiplies the carriers and a light-shielding layer provided between the photoabsorbing layer and the multiplying layer.

公开(公告)号：DE69211164D1

公开(公告)日：1996-07-11

申请号：DE69211164

申请日：1992-01-10

Applicant: CANON KK

Inventor： SUGAWA SHIGETOSHI ,  GOFUKU IHACHIRO

IPC: H01L27/146 ,  H01L31/0376 ,  H01L31/10 ,  H01L31/105 ,  H01L31/20 ,  H01L31/0368

公开(公告)号：DE3751285T2

公开(公告)日：1995-10-12

申请号：DE3751285

申请日：1987-09-16

Applicant: CANON KK

Inventor： SUGAWA SHIGETOSHI ,  TANAKA NOBUYOSHI ,  SUZUKI TOSHIJI ,  ISHIZAKI AKIRA

IPC: H01L27/146 ,  H04N5/369 ,  H04N3/15

Abstract: In a photoelectric converter of the type having a plurality of photosensors and a plurality of signal output lines for picking up signals from the photosensors, wherein the signals are picked up through signal output terminals smaller in number than that of the signal output lines, the photoelectric converter is characterized by that the signal output lines each have switch means for switching the signal output line and connecting a desired signal output line to a signal output terminal.

公开(公告)号：CA1333091C

公开(公告)日：1994-11-15

申请号：CA523041

申请日：1986-11-14

Applicant: CANON KK

Inventor： OHZU HAYAO ,  SUZUKI TOSHIJI ,  ISHIZAKI AKIRA ,  TANAKA NOBUYOSHI ,  SUGAWA SHIGETOSHI ,  HASHIMOTO SEIJI ,  HARADA TADANORI

IPC: H04N5/359 ,  H04N5/361 ,  H04N5/374 ,  H04N5/378 ,  H04N5/335

Abstract: In a photoelectric transducer apparatus having a plurality of photoelectric transducer elements each having a capacitor electrode formed on a control electrode of a corresponding semiconductor transistor, the apparatus being adapted to sequentially select each element in units of lines, to control a potential of the control electrode of the selected photoelectric transducer element through the capacitor electrode, to store carriers in the control electrode region, and to read out a signal component corresponding to the amount of charge, the apparatus includes: optical information storing means for storing optical information read out from the photoelectric transducer element; and dark voltage storing means for storing a voltage corresponding to a dark voltage read out from the photoelectric transducer element, and actual optical information stored in the optical information storing means and information corresponding to the dark voltage component stored in the dark voltage storing means are simultaneously read out onto different information output lines.

公开(公告)号：DE3689707T2

公开(公告)日：1994-07-14

申请号：DE3689707

申请日：1986-11-14

Applicant: CANON KK

Inventor： OHZU HAYAO ,  SUZUKI TOSHIJI ,  ISHIZAKI AKIRA ,  TANAKA NOBUYOSHI ,  SUGAWA SHIGETOSHI ,  HASHIMOTO SEIJI ,  HARADA TADANORI

IPC: H04N5/359 ,  H04N5/361 ,  H04N5/374 ,  H04N5/378 ,  H04N5/217 ,  H04N3/15

Abstract: In a photoelectric transducer apparatus having a plurality of photoelectric transducer elements each having a capacitor electrode formed on a control electrode of a corresponding semiconductor transistor, the apparatus being adapted to sequentially select each element in units of lines, to control a potential of the control electrode of the selected photoelectric transducer element through the capacitor electrode, to store carriers in the control electrode region, and to read out a signal component corresponding to the amount of charge, the apparatus includes: optical information storing means for storing optical information read out from the photoelectric transducer element; and dark voltage storing means for storing a voltage corresponding to a dark voltage read out from the photoelectric transducer element, and actual optical information stored in the optical information storing means and information corresponding to the dark voltage component stored in the dark voltage storing means are simultaneously read out onto different information output lines.

公开(公告)号：AT102775T

公开(公告)日：1994-03-15

申请号：AT86308920

申请日：1986-11-14

Applicant: CANON KK

Inventor： OHZU HAYAO ,  SUZUKI TOSHIJI ,  ISHIZAKI AKIRA ,  TANAKA NOBUYOSHI ,  SUGAWA SHIGETOSHI ,  HASHIMOTO SEIJI ,  HARADA TADANORI

IPC: H04N5/361 ,  H04N5/374 ,  H04N5/378 ,  H04N5/217 ,  H04N3/15

公开(公告)号：CA2059197A1

公开(公告)日：1992-07-12

申请号：CA2059197

申请日：1992-01-10

Applicant: CANON KK

Inventor： SUGAWA SHIGETOSHI

IPC: H01L27/146 ,  H01L31/107 ,  H01L31/20

Abstract: A photoelectric converting device has a photoelectric converting part which consists of a light absorbing layer of a predetermined forbidden band width Eg1 and a carrier multiplying layer, positioned in laminate structure between charge injection blocking layers. The multiplying layer is composed of a layer or plural layers with a stepback structure of the forbidden band width having a minimum width Eg2 and a maximum width Eg3 in alternate manner and showing a continuous variation therebetween in each layer. The charge injection blocking layers, light absorbing layer and carrier multiplying layer are composed of non-monocrystalline semiconductors and at least having the minimum forbidden band width Eg2 and/or the maximum forbidden band width Eg3 contain a microcrystalline structure.

公开(公告)号：DE69839899D1

公开(公告)日：2008-09-25

申请号：DE69839899

申请日：1998-09-28

Applicant: CANON KK

Inventor： KOCHI TETSUNOBU ,  UENO ISAMU ,  KOIZUMI TORU ,  HIYAMA HIROKI ,  SUGAWA SHIGETOSHI ,  OGAWA KATSUHISA ,  SAKURAI KATSUHITO

IPC: H01L27/146 ,  H04N5/355 ,  H04N5/363 ,  H04N5/365 ,  H04N5/374 ,  H04N5/3745

Abstract: In a photoelectric conversion device having a plurality of pixel cells each of which includes a photoelectric conversion element (901), a first switch (911) for transferring charge generated by the photoelectric conversion element, a field effect transistor (903), having a gate area for receiving the transferred charge, for outputting a signal corresponding to the charge stored in the gate area, and a second switch (902) for resetting the gate area of the field effect transistor, it is determined that the threshold voltages of the first switch and the second are different from the threshold voltage of the field effect transistor.

公开(公告)号：DE69334103D1

公开(公告)日：2007-02-22

申请号：DE69334103

申请日：1993-02-26

Applicant: CANON KK

Inventor： SONO KOICHI ,  MIYAWAKI MAMORU ,  ISHIZAKI AKIRA ,  OGAWA KATSUHISA ,  SAKURAI KATSUHITO ,  SUGAWA SHIGETOSHI ,  KONDO SHIGEKI

IPC: G02F1/1337 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368

Abstract: A liquid crystal display device comprises, at least, in a part of a close periphery of the display area of a pixel electrode substrate, a step substantially same as that of the display area.