公开(公告)号：EP1593160A4

公开(公告)日：2006-03-15

申请号：EP04709743

申请日：2004-02-10

Applicant: CANON KK

Inventor： WATANABE MINORU ,  MORISHITA MASAKAZU ,  MOCHIZUKI CHIORI ,  ISHII TAKAMASA ,  NOMURA KEIICHI

IPC: G01T1/20 ,  G01T1/24 ,  H01L27/12 ,  H01L27/14 ,  H01L27/146 ,  H01L29/786 ,  H04N5/32 ,  H04N5/365 ,  H04N5/369 ,  H04N5/374 ,  H04N5/335

CPC classification number: H01L27/12 ,  H01L27/14643 ,  H04N5/32

Abstract: In a solid state image pickup apparatus with a photodetecting device and one or more thin film transistors connected to the photodetecting device formed in one pixel, a part of the photodetecting device is formed overlaminated and arranged onto at least a part of the thin film transistor, and the thin film transistor is constructed by a source electrode, a drain electrode, a first gate electrode, and a second gate electrode arranged on the side opposite to the first gate electrode with respect to the source electrode and the drain electrode, and the first gate electrode is connected to the second gate electrode every pixel, thereby, suppressing an adverse effect of the photodetecting device laminated ontoon the TFT, a leakage at turn-off TFT, variation in a threshold voltage of the TFT due to an external electric field, and accurately transferring photo carrier to a signal processing circuit.

Abstract translation: 在具有受光器件的固态摄像装置和与形成在一个像素中的受光器件连接的一个以上的薄膜晶体管的情况下，在该薄膜晶体管的至少一部分上形成有受光器件的一部分， 薄膜晶体管由源电极，漏电极，第一栅电极和第二栅电极构成，第二栅电极相对于源电极和漏极布置在与第一栅电极相反的一侧，第一栅极为 连接到每个像素的第二栅电极，从而抑制光电检测器件对TFT的不利影响，关断TFT处的泄漏，由于外部电场引起的TFT的阈值电压的变化，以及精确地传输照片 载波到信号处理电路。

公开(公告)号：EP0766317A3

公开(公告)日：1998-12-23

申请号：EP96115469

申请日：1996-09-26

Applicant: CANON KK

Inventor： KOBAYASHI ISAO ,  FUNAKOSHI AKIRA ,  TAGO AKIRA ,  KAIFU NORIYUKI ,  TAKEDA SHINICHI ,  TAKAMI EIICHI ,  MORISHITA MASAKAZU ,  HAYASHI SHINICHI ,  MOCHIZUKI CHIORI ,  ENDO TADAO ,  TAMURA TOSHIKAZU ,  TASHIRO KAZUAKI

IPC: G01J1/44 ,  G01T1/24 ,  H01L21/02 ,  H01L27/12 ,  H01L27/146 ,  H04N1/028 ,  H04N1/04 ,  H04N5/335 ,  H04N5/369 ,  H04N9/07 ,  H01L31/0232 ,  H01L31/115

CPC classification number: H01L27/14609 ,  H01L27/14623 ,  H01L27/14663

Abstract: A photoelectric conversion apparatus comprises a plurality of substrates (1). Each of the substrates has a a plurality of photoelectric conversion elements on a rear surface thereof on a base (2). A light-absorbing member (3) is provided on at least one of a front surface and end faces of the substrates.

公开(公告)号：EP1687971A4

公开(公告)日：2010-04-21

申请号：EP04799716

申请日：2004-11-10

Applicant: CANON KK

Inventor： ISHII TAKAMASA ,  MORISHITA MASAKAZU ,  MOCHIZUKI CHIORI ,  WATANABE MINORU ,  NOMURA KEIICHI

IPC: G01T1/20 ,  G01T1/24 ,  H01L27/14 ,  H01L27/146 ,  H04N5/32 ,  H04N5/335 ,  H04N5/374

CPC classification number: H04N5/3745 ,  H01L27/14632 ,  H01L27/14658 ,  H01L27/14663 ,  H04N5/35527

Abstract: Sensitivity is freely changeable to another one in correspondence to a photographing mode, and both still image photographing and moving image photographing for example which are largely different from each other in dosage of exposure to radiation and which are also different from each other in required sensitivity are carried out so as to meet that request. A source or drain electrode of a TFT 21 is connected to a signal output circuit 3 through a signal line 14a and an IC 5. A source/drain of a TFT 23 is connected to the signal output circuit 3 through a signal line 14b and the IC 5. Thus, in each pixel 6, any one of the signal lines 14a and 14b is freely selectable when a signal is read out.

公开(公告)号：EP0791964A3

公开(公告)日：1998-11-18

申请号：EP97102879

申请日：1997-02-21

Applicant: CANON KK

Inventor： ENDO TADAO ,  FUNAKOSHI AKIRA ,  TAGO AKIRA ,  TAKEDA SHINICHI ,  TAKAMI EIICHI ,  MORISHITA MASAKAZU ,  HAYASHI SHINICHI ,  MOCHIZUKI CHIORI ,  TAMURA TOSHIKAZU ,  WATANABE MINORU

IPC: G01T1/20 ,  H01J35/10 ,  H01L27/00 ,  H01L27/14 ,  H01L27/144 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/115 ,  H04N5/32

CPC classification number: H01L27/14663 ,  H01L27/1446 ,  H01L27/14618 ,  H01L27/14623 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14676 ,  H01L31/02 ,  H01L31/02322 ,  H01L31/024 ,  H01L31/085 ,  H01L31/115 ,  H01L2924/0002 ,  H04N5/32 ,  H01L2924/00

Abstract: In a photoelectric conversion device including peripheral ICs, the peripheral ICs are in thermal contact with a substrate having photoelectric conversion elements and a chassis, which covers the peripheral ICs and has high thermal conductivity, via a thermal conductive member, so as to eliminate adverse influences of heat produced by the peripheral ICs such as a low S/N ratio.

公开(公告)号：EP2033221A4

公开(公告)日：2013-03-27

申请号：EP07744968

申请日：2007-06-04

Applicant: CANON KK

Inventor： MOCHIZUKI CHIORI ,  WATANABE MINORU ,  ISHII TAKAMASA ,  MORISHITA MASAKAZU

IPC: H01L27/14 ,  G01T1/24 ,  H01L27/146

CPC classification number: G01T1/241 ,  H01L27/14632 ,  H01L27/14658 ,  H01L27/14659 ,  H01L27/14663

公开(公告)号：EP1593158A4

公开(公告)日：2008-04-16

申请号：EP04709730

申请日：2004-02-10

Applicant: CANON KK

Inventor： NOMURA KEIICHI ,  MORISHITA MASAKAZU ,  MOCHIZUKI CHIORI ,  WATANABE MINORU ,  ISHII TAKAMASA

IPC: H01L27/14 ,  H01L27/146 ,  H01L27/144 ,  H01L31/10 ,  H04N3/15 ,  H04N5/32

CPC classification number: H04N5/32 ,  H01L27/14603 ,  H01L27/14658

Abstract: A solid-state image pickup device according to the present invention has a plurality of photoelectric conversion elements and a plurality of switching elements, characterized in that the photoelectric conversion element is formed above at least one switching element, and a shielding electrode layer is disposed between the switching elements and the photoelectric conversion elements. Further, a radiation image pickup device according to the present invention has a radiation conversion layer for directly converting radiation into electric charges, and a plurality of switching elements, and is characterized in that the radiation conversion layer is formed above one or more switching elements, and a shielding electrode layer is disposed between the switching elements and the radiation conversion layer.

公开(公告)号：EP1593159A4

公开(公告)日：2007-09-12

申请号：EP04709735

申请日：2004-02-10

Applicant: CANON KK

Inventor： MOCHIZUKI CHIORI ,  MORISHITA MASAKAZU ,  WATANABE MINORU ,  ISHII TAKAMASA ,  NOMURA KEIICHI

IPC: H01L27/146 ,  H04N5/32 ,  G01T1/24

CPC classification number: H01L27/14658 ,  H04N5/32

Abstract: In a radiation image pickup device including: sensor element for converting radiation into an electrical signal; and a thin film transistor connected to the sensor element, an electrode of the sensor element connected to the thin film transistor is disposed above the thin film transistor, and that the thin film transistor has a top gate type structure in which a semiconductor layer, a gate insulating layer, and a gate electrode layer are laminated in this order on a substrate, so that a channel portion of the thin film transistor is protected by a gate electrode, thereby providing Stable TFT characteristics without undesirable turning ON any of the TFT elements due to the back gate effect by the fluctuation in electric potentials corresponding to outputs from the sensor electrodes, and thereby greatly improving image quality.

公开(公告)号：DE69738147D1

公开(公告)日：2007-10-31

申请号：DE69738147

申请日：1997-02-21

Applicant: CANON KK

Inventor： ENDO TADAO ,  FUNAKOSHI AKIRA ,  TAGO AKIRA ,  TAKEDA SHINICHI ,  TAKAMI EIICHI ,  MORISHITA MASAKAZU ,  HAYASHI SHINICHI ,  MOCHIZUKI CHIORI ,  TAMURA TOSHIKAZU ,  WATANABE MINORU

IPC: G01T1/20 ,  H01L27/144 ,  H01J35/10 ,  H01L27/00 ,  H01L27/14 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/024 ,  H01L31/115 ,  H04N5/32

公开(公告)号：DE69636404D1

公开(公告)日：2006-09-14

申请号：DE69636404

申请日：1996-10-18

Applicant: CANON KK

Inventor： HAYASHI SHINICHI ,  FUNAKOSHI AKIRA ,  TAGO AKIRA ,  OKADA SATOSHI ,  TAKEDA SHINICHI ,  TAKAMI EIICHI ,  MORISHITA MASAKAZU ,  MOCHIZUKI CHIORI ,  ENDO TADAO ,  TAMURA TOSHIKAZU

IPC: G01J1/44 ,  H01L31/0203 ,  G01T1/20 ,  H01L27/14 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/042 ,  H01L31/09 ,  H01L31/14 ,  H04N1/028 ,  H04N1/04 ,  H04N5/335 ,  H05K3/30

公开(公告)号：DE69618518D1

公开(公告)日：2002-02-21

申请号：DE69618518

申请日：1996-09-26

Applicant: CANON KK

Inventor： KOBAYASHI ISAO ,  FUNAKOSHI AKIRA ,  TAGO AKIRA ,  KAIFU NORIYUKI ,  TAKEDA SHINICHI ,  TAKAMI EIICHI ,  MORISHITA MASAKAZU ,  HAYASHI SHINICHI ,  MOCHIZUKI CHIORI ,  ENDO TADAO ,  TAMURA TOSHIKAZU ,  TASHIRO KAZUAKI

IPC: G01J1/44 ,  G01T1/24 ,  H01L21/02 ,  H01L27/12 ,  H01L27/146 ,  H04N1/028 ,  H04N1/04 ,  H04N5/335 ,  H04N5/369 ,  H04N9/07 ,  H01L31/0232 ,  H01L31/115 ,  H01L31/0216 ,  G01T1/00

Abstract: A photoelectric conversion apparatus comprises a plurality of substrates. Each of the substrates has a a plurality of photoelectric conversion elements on a rear surface thereof on a base. A light-absorbing member is privoded on at least one of a front surface and end faces of the substrate.