公开(公告)号：WO2009126263A1

公开(公告)日：2009-10-15

申请号：PCT/US2009/002181

申请日：2009-04-08

Applicant: CORNELL UNIVERSITY ,  LAL, Amit ,  ARDANUC, Serhan, M.

Inventor： LAL, Amit ,  ARDANUC, Serhan, M.

IPC: H02N6/00

CPC classification number: G02B7/1821 ,  B81B3/0054 ,  B81B2201/042 ,  B81B2203/058 ,  F24S23/80 ,  F24S30/452 ,  F24S2023/85 ,  G02B7/182 ,  G02B26/0841 ,  H01L31/0543 ,  H01L31/0547 ,  Y02E10/47 ,  Y02E10/52

Abstract: A system (120) for reflecting or redirecting incident light, microwave or sound energy includes a first substrate (144) configured to support an array of reflective elements (130) that can be angularly displaced through a range of substantially (90) degrees in response to a reflector angle control signal and a controller programmed to generate the reflector angle control signal to achieve desired incident energy, beam or wavefront re-direction. The reflective elements (130) preferably comprise MEMS micro-reflector elements hingedly or movably attached to the first substrate (130) and define a reflective surface that is aimed at the source of incident light, microwave or sound energy.

Abstract translation: 用于反射或重定向入射光，微波或声能的系统（120）包括被配置为支撑反射元件阵列（130）的第一衬底（144），所述反射元件阵列可以在基本上（90）度的范围内成角度地移位 反射器角度控制信号和控制器被编程以产生反射器角度控制信号以实现期望的入射能量，波束或波前重新定向。 反射元件（130）优选地包括铰链地或可移动地附接到第一基板（130）并且限定针对入射光源，微波或声能源的反射表面的MEMS微反射器元件。

公开(公告)号：WO2022245462A2

公开(公告)日：2022-11-24

申请号：PCT/US2022/025586

申请日：2022-04-20

Applicant: CORNELL UNIVERSITY

Inventor： LAL, Amit ,  LIU, Yutong ,  HWANG, Juneho ,  KUO, Justin

IPC: G01S15/89 ,  G01N29/34 ,  G06N3/063 ,  G01N29/06 ,  G06N20/10 ,  A61B8/00 ,  G06J1/00 ,  G06N20/00

Abstract: An ultrasonic computation apparatus includes first and second ultrasonic transducer arrays arranged on opposing ends thereof, and further comprises first and second ultrasonic propagation regions arranged between the first and second ultrasonic transducer arrays and proximate respective ones of the first and second ultrasonic transducer arrays, and an intermediate computational structure arranged between the first and second ultrasonic propagation regions. Respective first and second input signals applied to respective ones of the first and second ultrasonic transducer arrays cause propagation of corresponding ultrasonic waves through the respective first and second ultrasonic propagation regions towards the intermediate computational structure. The intermediate computational structure is configured to receive the propagating ultrasonic waves from the respective first and second ultrasonic propagation regions and to generate from the received propagating ultrasonic waves an additional signal that is a function of the first and second signals.

公开(公告)号：WO2017161220A1

公开(公告)日：2017-09-21

申请号：PCT/US2017/022870

申请日：2017-03-17

Applicant: CORNELL UNIVERSITY

Inventor： LAL, Amit ,  ABDELMEJEED, Mamdouh ,  KUO, Justin

IPC: H03H9/13 ,  H03H9/30 ,  H03H9/02

CPC classification number: H03H9/30 ,  H03H9/02102 ,  H03H9/131

Abstract: A CMOS compatible GHz ultrasonic pulse/echo transmit-receive ultrasonic delay element demonstrating less than

Abstract translation: CMOS兼容的GHz超声波脉冲/回波发射 - 接收超声波延迟元件表现出随时间小于6ppm的稳定性并且在两个温度下具有零温度延迟系数。 延迟元件包括一个或多个不需要释放步骤的CMOS兼容压电换能器，其发送和/或接收GHz超声波波包。 体衬底对穿过衬底传输的GHz超声波包具有低损耗，并使用衍射现象来检索多次反射。

公开(公告)号：WO2017066436A3

公开(公告)日：2017-04-20

申请号：PCT/US2016/056826

申请日：2016-10-13

Applicant: CORNELL UNIVERSITY

Inventor： LAL, Amit ,  MOLNAR, Alyosha

IPC: H01L41/113 ,  H01L41/187 ,  H01H1/00 ,  H01H59/00 ,  H02N2/18

Abstract: A zero power sensor node includes a sensor suite including two or more different types of zero power sensors, particularly including at least two of a zero power PZT-bimorph accelerometer, a zero power PZT-bimorph rotation sensor, a zero power PZT-bimorph magnetic sensor, a zero power PZT-bimorph gyroscope, and a zero power acoustic sensor, which may be a PZT-bimorph acoustic sensor or an resonant cavity, and a near zero power-consuming, multi gate electrostatic switch. The node output can send a wake-up signal to trigger a higher power consuming device.

公开(公告)号：WO2014014968A1

公开(公告)日：2014-01-23

申请号：PCT/US2013/050772

申请日：2013-07-16

Applicant: CORNELL UNIVERSITY

Inventor： LAL, Amit ,  ARDANUC, Serhan ,  HOOPLE, Jason, T. ,  KUO, Justin, C.

IPC: H01L27/00 ,  H01L21/77

CPC classification number: B06B1/0292 ,  B06B1/0622 ,  H04B11/00 ,  H04R17/00

Abstract: Methods, devices and systems are disclosed for implementing ultrasonic communications in an integrated circuit. In one aspect, the disclosed technology integrates piezoelectric and electrostatic actuator arrays into IC chips to form sonar arrays that transmit from one location in chip to another, which can allows for tunable sonic communication links between any two points. For example, the sonar elements can also be used to transmit signals from one chip to another through a common substrate, while making use of the frequency- selective nature of acoustic transducers and waveguides to communicate to multiple receivers over different frequency bands at the same time, e.g., via frequency division multiplexing.

Abstract translation: 公开了用于在集成电路中实现超声波通信的方法，装置和系统。 在一个方面，所公开的技术将压电和静电致动器阵列集成到IC芯片中，以形成从芯片中的一个位置传输到另一个的声纳阵列，这可以允许在任何两个点之间的可调音频通信链路。 例如，声纳元件也可用于通过公共衬底将信号从一个芯片传输到另一个芯片，同时利用声换能器和波导的频率选择性质同时在不同频带上与多个接收器通信 ，例如通过频分复用。

公开(公告)号：WO2012009550A2

公开(公告)日：2012-01-19

申请号：PCT/US2011/044032

申请日：2011-07-14

Applicant: CORNELL UNIVERSITY ,  LAL, Amit ,  ABHISHEK, Ramkumar

Inventor： LAL, Amit ,  ABHISHEK, Ramkumar

IPC: G01N33/49 ,  G01N29/036 ,  G01N29/24 ,  G01N11/02

CPC classification number: G01N11/16 ,  G01N29/036 ,  G01N29/2437 ,  G01N2291/02818

Abstract: An ultrasonic or acoustic viscosity sensor or viscometer is provided that can be used to accurately measure viscosity for fluid samples of less than 1 µl in volume. Methods for measuring viscosity for fluid samples of less than 1 µl in volume are also provided. The viscosity sensor and methods based thereon enable simultaneous measurement of bulk and dynamic (shear-rate dependent) viscosity of a non-Newtonian fluid. Bulk and dynamic viscosity of the non-Newtonian fluid can be measured simultaneously without separating constituents of the fluid, and thus distinguishing the effect of constituents on the viscosity. Dynamic viscosity of the non-Newtonian fluid can be estimated at varying shear rates, to study the deformability of the constituents of the fluid as a function of shear rate.

Abstract translation: 提供超声波或声学粘度传感器或粘度计，其可用于精确测量体积小于1微升的流体样品的粘度。 还提供了测量体积小于1微升的流体样品粘度的方法。 粘度传感器和基于其的方法能够同时测量非牛顿流体的体积和动态（与剪切速率相关的）粘度。 非牛顿流体的体积和动力粘度可以同时测量，而不分离流体成分，从而区分成分对粘度的影响。 可以在不同的剪切速率下估算非牛顿流体的动态粘度，以研究作为剪切速率的函数的流体成分的可变形性。

公开(公告)号：WO2019226881A1

公开(公告)日：2019-11-28

申请号：PCT/US2019/033724

申请日：2019-05-23

Applicant: CORNELL UNIVERSITY

Inventor： LAL, Amit

IPC: H01L41/083 ,  H01L41/02 ,  H01L41/08 ,  H01L41/16

Abstract: A device configured for low-energy ultrasonic 2D Fourier transform analysis, comprising: (i) a first layer comprising an array of piezoelectric pixels; (ii) a second layer comprising an array of piezoelectric pixels; (iii) a third layer, positioned between the first and second layers, comprising a bulk ultrasonic transmission medium; wherein the second layer of array of piezoelectric pixels is in the Fourier plane of an input signal of the first layer array of piezoelectric pixels.

公开(公告)号：WO2017151869A1

公开(公告)日：2017-09-08

申请号：PCT/US2017/020374

申请日：2017-03-02

Applicant: CORNELL UNIVERSITY

Inventor： LAL, Amit ,  ARDANUC, Serhan Mehmet

IPC: G01P15/02 ,  G01P15/097

Abstract: A SAW-based inertial sensor incorporates a curved SAW drive resonator and graphene electrodes to increase the Coriolis force on a pillar array and generate secondary SAW waves that create a strain-induced hyperfine frequency transition in an enclosed alkali atom vapor, in conjunction with an integrated FP resonator to measure very small inertial signals corresponding to 10 μg and 0.01 °/hr, representing a dynamic range of 10 orders of magnitude.

Abstract translation: 基于SAW的惯性传感器包括弯曲的SAW驱动谐振器和石墨烯电极以增加柱体阵列上的科里奥利力并且产生在封闭的碱中产生应变诱导的超精细频率转变的次级SAW波 原子蒸气与集成FP谐振器一起测量非常小的对应于10μg和0.01°/小时的惯性信号，代表10个数量级的动态范围。

公开(公告)号：WO2013090887A1

公开(公告)日：2013-06-20

申请号：PCT/US2012/070048

申请日：2012-12-17

Applicant: CORNELL UNIVERSITY

Inventor： LAL, Amit ,  AMPONSAH, Kwame

IPC: B81B3/00 ,  B81C1/00 ,  B81B7/00 ,  G01N37/00 ,  G01B21/30 ,  G01Q70/00

CPC classification number: G01Q20/00 ,  G01Q10/00 ,  G01Q60/30 ,  G01Q70/06 ,  G01Q70/08

Abstract: A multi-tip nano-probe apparatus and a method for probing a sample while using the multi-tip nano-probe apparatus each employ located over a substrate: (1) an immovable probe tip with respect to the substrate; (2) a movable probe tip with respect to the substrate; and (3) a motion sensor that is coupled with the movable probe tip. The multi-tip nano-probe apparatus and related method provide for improved sample probing due to close coupling of the motion sensor with the movable probe tip, and also retractability of the movable probe tip with respect to the immovable probe tip.

Abstract translation: 使用多头纳米探针装置的多尖端纳米探针装置和探测样品的方法各自使用位于基底上方：（1）相对于基底的不可移动的探针尖端; （2）相对于基板的可动探针尖端; 和（3）与可移动探针尖端连接的运动传感器。 多尖头纳米探针装置和相关方法提供了由于运动传感器与可移动探针尖端的紧密耦合而引起的改进的样本探测，以及可移动探针尖端相对于不可移动的探针尖端的伸缩性。

公开(公告)号：WO2011063228A2

公开(公告)日：2011-05-26

申请号：PCT/US2010/057422

申请日：2010-11-19

Applicant: CORNELL UNIVERSITY ,  LAL, Amit ,  TIN, Steven

Inventor： LAL, Amit ,  TIN, Steven

IPC: G21H1/00

CPC classification number: G21H1/06

Abstract: An exemplary thinned-down betavoltaic device includes an N+ doped silicon carbide (SiC) substrate having a thickness between about 3 to 50 microns, an electrically conductive layer disposed immediately adjacent the bottom surface of the SiC substrate; an N- doped SiC epitaxial layer disposed immediately adjacent the top surface of the SiC substrate, a P+ doped SiC epitaxial layer disposed immediately adjacent the top surface of the N- doped SiC epitaxial layer, an ohmic conductive layer disposed immediately adjacent the top surface of the P+ doped SiC epitaxial layer, and a radioisotope layer disposed immediately adjacent the top surface of the ohmic conductive layer. The radioisotope layer can be 63 Ni, 147 Pm, or 3 H. Devices can be stacked in parallel or series. Methods of making the devices are disclosed.

Abstract translation: 示例性的薄化的贝塔伏特装置包括具有约3至50微米之间的厚度的N +掺杂的碳化硅（SiC）衬底，紧邻SiC衬底的底部表面设置的导电层; 紧邻SiC衬底的顶表面设置的N掺杂SiC外延层，紧邻N掺杂SiC外延层的顶表面设置的P +掺杂SiC外延层，与N掺杂SiC外延层的顶表面直接相邻设置的欧姆导电层 P +掺杂的SiC外延层以及紧邻欧姆导电层的顶表面设置的放射性同位素层。 放射性同位素层可以是63 N，147 Pm或3 H。 器件可以并联或串联堆叠。 披露了制造这些设备的方法。