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    METHOD OF CREATING MEMS DEVICE CAVITIES BY A NON-ETCHING PROCESS
    23.
    发明申请
    METHOD OF CREATING MEMS DEVICE CAVITIES BY A NON-ETCHING PROCESS 失效
    通过非蚀刻过程创建MEMS器件CAVI的方法

    公开(公告)号：US20100271688A1

    公开(公告)日：2010-10-28

    申请号：US12831898

    申请日：2010-07-07

    Applicant: Chun-Ming Wang ,  Jeffrey Lan ,  Teruo Sasagawa

    Inventor： Chun-Ming Wang ,  Jeffrey Lan ,  Teruo Sasagawa

    IPC: G02F1/19

    CPC classification number: B81C1/00047 ,  B81B2201/047 ,  B81C2201/0108 ,  B81C2201/0111 ,  G02B26/001

    Abstract: MEMS devices (such as interferometric modulators) may be fabricated using a sacrificial layer that contains a heat vaporizable polymer to form a gap between a moveable layer and a substrate. One embodiment provides a method of making a MEMS device that includes depositing a polymer layer over a substrate, forming an electrically conductive layer over the polymer layer, and vaporizing at least a portion of the polymer layer to form a cavity between the substrate and the electrically conductive layer. Another embodiment provides a method for making an interferometric modulator that includes providing a substrate, depositing a first electrically conductive material over at least a portion of the substrate, depositing a sacrificial material over at least a portion of the first electrically conductive material, depositing an insulator over the substrate and adjacent to the sacrificial material to form a support structure, and depositing a second electrically conductive material over at least a portion of the sacrificial material, the sacrificial material being removable by heat-vaporization to thereby form a cavity between the first electrically conductive layer and the second electrically conductive layer.

    Abstract translation: 可以使用包含热可汽化聚合物以在可移动层和基底之间形成间隙的牺牲层来制造MEMS器件（例如干涉式调制器）。 一个实施例提供了一种制造MEMS器件的方法，该MEMS器件包括在衬底上沉积聚合物层，在聚合物层上形成导电层，并蒸发聚合物层的至少一部分以在衬底和电 导电层。 另一个实施例提供了制造干涉式调制器的方法，该方法包括提供衬底，在衬底的至少一部分上沉积第一导电材料，在第一导电材料的至少一部分上沉积牺牲材料，沉积绝缘体 在所述衬底上并且邻近所述牺牲材料以形成支撑结构，以及在所述牺牲材料的至少一部分上沉积第二导电材料，所述牺牲材料可通过热蒸发而被去除，从而在所述第一电 导电层和第二导电层。

    Method for fabricating a pole tip in a magnetic transducer
    28.
    发明授权
    Method for fabricating a pole tip in a magnetic transducer 有权
    在磁换能器中制造极尖的方法

    公开(公告)号：US07186348B2

    公开(公告)日：2007-03-06

    申请号：US10882883

    申请日：2004-06-30

    Applicant: Tsung Yuan Chen ,  David Patrick Druist ,  Quang Le ,  Kim Y. Lee ,  Chun-Ming Wang ,  Howard Gordon Zolla

    Inventor： Tsung Yuan Chen ,  David Patrick Druist ,  Quang Le ,  Kim Y. Lee ,  Chun-Ming Wang ,  Howard Gordon Zolla

    IPC: G11B5/187

    CPC classification number: G11B5/3163 ,  G11B5/1278 ,  G11B5/3116 ,  Y10T29/49032

    Abstract: A method for fabricating a magnetic head with a trapezoidal shaped pole piece tip is described. The body of the main pole piece is deposited, then one or more layers for the pole piece tip are deposited. A bed material is deposited over the pole piece tip material. A void is formed in the bed material over the area for the pole piece tip. The void is filled with an ion-milling resistant material such as alumina preferably using atomic layer deposition or atomic layer chemical vapor deposition. The excess ion-milling resistant material and the bed material are removed. The result is an ion-milling mask formed over the area for the pole piece tip. Ion milling is then used to remove the unmasked material in the pole piece tip layer and to form a beveled pole piece tip and preferably a beveled face on the main pole piece.

    Abstract translation: 描述了制造具有梯形极片尖端的磁头的方法。 沉积主极片的主体，然后沉积用于极片尖端的一个或多个层。 床材料沉积在极片末端材料上。 在用于极片尖端的区域上的床材料中形成空隙。 空隙填充有耐离子碾磨材料，例如氧化铝，优选使用原子层沉积或原子层化学气相沉积。 除去过量的抗离子碾磨材料和床料。 结果是在极片尖端的区域上形成离子铣削掩模。 然后使用离子铣削去除极片末端层中的未掩模材料，并且在主极片上形成斜面极片末端，并且优选地形成斜面。

    Method for fabricating passivation layer
    30.
    发明授权
    Method for fabricating passivation layer 有权
    钝化层制造方法

    公开(公告)号：US07166542B2

    公开(公告)日：2007-01-23

    申请号：US10707112

    申请日：2003-11-21

    Applicant: Ming-Hung Lo ,  Liang-Pin Chou ,  Chun-Ming Wang ,  Li-Fu Chen

    Inventor： Ming-Hung Lo ,  Liang-Pin Chou ,  Chun-Ming Wang ,  Li-Fu Chen

    IPC: H01L21/31 ,  H01L21/469

    CPC classification number: H01L21/76834 ,  H01L21/76832

    Abstract: A method of fabricating a passivation layer is provided. A substrate with a plurality of device structures and at least an interconnect thereon is provided. A patterned metallic layer is formed over the interconnection layer. A plasma-enhanced chemical vapor deposition process is performed to form a first passivation over the metallic layer such that the processing pressure is higher (and/or the processing power is lower) than the pressure (the power) used in prior art. A moisture impermeable second passivation is formed over the first passivation layer. With the first passivation formed in a higher processing pressure (and/or lower processing power), damages to metallic layers or devices due to plasma bombardment is minimized.

    Abstract translation: 提供一种制造钝化层的方法。 提供具有多个器件结构并且至少在其上的互连的衬底。 在互连层上形成图案化的金属层。 执行等离子体增强化学气相沉积工艺以在金属层上形成第一钝化，使得处理压力比现有技术中使用的压力（功率）更高（和/或处理能力较低）。 在第一钝化层上形成不透水的第二钝化。 由于在较高的处理压力（和/或较低的处理能力）下形成的第一钝化，由于等离子体轰击而对金属层或器件造成的损害最小化。

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