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    一种托盘及其加工工艺
    3.
    发明公开
    一种托盘及其加工工艺 无效

    公开(公告)号：CN106754247A

    公开(公告)日：2017-05-31

    申请号：CN201611139705.7

    申请日：2016-12-12

    Applicant: 中国科学院微电子研究所

    Inventor： 刘明 ,  赵盛杰 ,  牛洁斌 ,  李海亮 ,  胡媛 ,  张凯平 ,  张培文 ,  路程 ,  刘宇

    IPC: C12M1/00 ,  B81C1/00

    CPC classification number: C12M1/00 ,  B81C1/00444 ,  B81C1/005 ,  B81C2201/0101 ,  B81C2201/0102 ,  B81C2201/0111

    Abstract: 本发明属于微纳加工技术领域，公开了一种托盘及其加工工艺，加工工艺包括以下步骤：绘制版图，版图上孔洞的尺寸与观测样本的尺寸相匹配；使用版图对石英基片进行曝光；对石英基片进行显影、定影处理；沉积金属铬；去除光刻胶以使与版图的孔洞对应部位的金属铬被剥离；以金属铬为掩模，在石英基片上刻蚀形成孔洞；去除石英基片上残余的金属铬。托盘采用石英基片构成，石英基片上设置有孔洞，孔洞的尺寸与观测样本的尺寸相匹配。本发明解决了现有技术中生物样品观测时使用多个或不同规格的样品载体，导致样品容易产生混淆且检测成本较高的问题。本发明达到了有效提高试验效率和针对性、降低检测成本的技术效果。

    METHOD FOR MANUFACTURING MEMS TORSIONAL ELECTROSTATIC ACTUATOR
    8.
    发明公开
    METHOD FOR MANUFACTURING MEMS TORSIONAL ELECTROSTATIC ACTUATOR 审中-公开

    公开(公告)号：EP3228584A4

    公开(公告)日：2018-07-04

    申请号：EP15865926

    申请日：2015-07-31

    Applicant: CSMC TECHNOLOGIES FAB1 CO LTD

    Inventor： JING ERRONG

    IPC: B81C1/00

    CPC classification number: B81C1/00182 ,  B81B3/0021 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2203/058 ,  B81C1/00603 ,  B81C2201/0109 ,  B81C2201/0111

    Abstract: A method for manufacturing an MEMS torsional electrostatic actuator comprises: providing a substrate (10), wherein the substrate (10) comprises a first silicon layer (100), a buried oxide layer (200) and a second silicon layer (300) that are laminated sequentially; patterning the first silicon layer (100) and exposing the buried oxide layer (200) to form a rectangular upper electrode plate (120) separated from a peripheral region (140), wherein the upper electrode plate (120) and the peripheral region (140) are connected by only using a cantilever beam (130), and forming, on the peripheral region (140), a recessed portion (110) exposing the buried oxide layer (200); patterning the second silicon layer (300) and exposing the buried oxide layer (200) to form a back cavity (310), wherein the back cavity (310) is located in a region of the second silicon layer (300) corresponding to the upper electrode plate (120), covers 40% to 60% of the area of the region corresponding to the upper electrode plate (120), and is close to one end of the cantilever beam (130); exposing the second silicon layer (300), and suspending the upper electrode plate (120) and the cantilever beam (130); and respectively forming an upper contact electrode (400) and a lower contact electrode (500) on the second silicon layer (300).

    MEMS ACOUSTIC TRANSDUCER WITH COMBFINGERED ELECTRODES AND CORRESPONDING MANUFACTURING PROCESS
    9.
    发明公开
    MEMS ACOUSTIC TRANSDUCER WITH COMBFINGERED ELECTRODES AND CORRESPONDING MANUFACTURING PROCESS 审中-公开
    具有梳状电极的MEMS声学换能器及相应的制造工艺

    公开(公告)号：EP3247134A1

    公开(公告)日：2017-11-22

    申请号：EP16206878.7

    申请日：2016-12-23

    Applicant: STMicroelectronics S.r.l.

    Inventor： VARISCO, Igor ,  LAMAGNA, Luca ,  ADORNO, Silvia ,  PERLETTI, Matteo ,  GATTERE, Gabriele ,  VALZASINA, Carlo ,  CONTI, Sebastiano

    IPC: H04R19/00 ,  H04R31/00 ,  B81C1/00

    CPC classification number: H04R19/005 ,  B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0136 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2203/053 ,  B81C1/00158 ,  B81C1/00166 ,  B81C2201/0109 ,  B81C2201/0111 ,  B81C2201/0133 ,  G01H11/06 ,  H04R31/00 ,  H04R2201/003 ,  H04R2201/023

    Abstract: A MEMS acoustic transducer (20) provided with: a substrate (21) of semiconductor material, having a back surface (21b) and a front surface (21a) opposite with respect to a vertical direction (z); a first cavity (22) formed within the substrate (21), which extends from the back surface (21b) to the front surface (21a); a membrane (23) which is arranged at the upper surface (21a), suspended above the first cavity (22) and anchored along a perimeter thereof to the substrate (21); and a combfingered electrode arrangement (28) including a number of mobile electrodes (29) coupled to the membrane (23) and a number of fixed electrodes (30) coupled to the substrate (21) and facing respective mobile electrodes (29) for forming a sensing capacitor, wherein a deformation of the membrane (23) as a result of incident acoustic pressure waves causes a capacitive variation (ΔC) of the sensing capacitor. In particular, the combfingered electrode arrangement lies vertically with respect to the membrane (23) and extends parallel thereto.

    Abstract translation: 一种MEMS声换能器（20），其设置有：半导体材料的衬底（21），其具有相对于竖直方向（z）相对的后表面（21b）和前表面（21a）; 形成在所述基板（21）内的从所述背面（21b）延伸到所述前表面（21a）的第一空腔（22）; 设置在所述上​​表面（21a）处并悬挂在所述第一腔体（22）上方并沿其周边锚定到所述基底（21）的膜（23）; 以及包括耦合到所述膜（23）的多个可动电极（29）和耦合到所述衬底（21）并且面向相应的可动电极（29）以形成的多个固定电极（30）的梳状指状电极布置 感测电容器，其中由于入射声压波导致膜（23）的变形导致感测电容器的电容变化（ΔC）。 特别地，梳形电极装置相对于膜（23）垂直放置并且与其平行地延伸。

    METHOD FOR MANUFACTURING MEMS TORSIONAL ELECTROSTATIC ACTUATOR
    10.
    发明公开
    METHOD FOR MANUFACTURING MEMS TORSIONAL ELECTROSTATIC ACTUATOR 审中-公开
    制造MEMS扭转静电驱动器的方法

    公开(公告)号：EP3228584A1

    公开(公告)日：2017-10-11

    申请号：EP15865926.8

    申请日：2015-07-31

    Applicant: CSMC Technologies Fab1 Co., Ltd.

    Inventor： JING, Errong

    IPC: B81C1/00

    CPC classification number: B81C1/00182 ,  B81B3/0021 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81B2203/058 ,  B81C1/00603 ,  B81C2201/0109 ,  B81C2201/0111

    Abstract: A method for manufacturing an MEMS torsional electrostatic actuator comprises: providing a substrate (10), wherein the substrate (10) comprises a first silicon layer (100), a buried oxide layer (200) and a second silicon layer (300) that are laminated sequentially; patterning the first silicon layer (100) and exposing the buried oxide layer (200) to form a rectangular upper electrode plate (120) separated from a peripheral region (140), wherein the upper electrode plate (120) and the peripheral region (140) are connected by only using a cantilever beam (130), and forming, on the peripheral region (140), a recessed portion (110) exposing the buried oxide layer (200); patterning the second silicon layer (300) and exposing the buried oxide layer (200) to form a back cavity (310), wherein the back cavity (310) is located in a region of the second silicon layer (300) corresponding to the upper electrode plate (120), covers 40% to 60% of the area of the region corresponding to the upper electrode plate (120), and is close to one end of the cantilever beam (130); exposing the second silicon layer (300), and suspending the upper electrode plate (120) and the cantilever beam (130); and respectively forming an upper contact electrode (400) and a lower contact electrode (500) on the second silicon layer (300).

    Abstract translation: 一种用于制造MEMS扭转静电致动器的方法，包括：提供衬底（10），其中衬底（10）包括第一硅层（100），掩埋氧化物层（200）和第二硅层 依次层压; 图案化第一硅层（100）并暴露掩埋氧化物层（200）以形成与外围区域（140）分离的矩形上电极板（120），其中上电极板（120）和外围区域 ）通过仅使用悬臂梁（130）连接，并且在外围区域（140）上形成暴露掩埋氧化物层（200）的凹陷部分（110）; 图案化第二硅层（300）并暴露掩埋氧化物层（200）以形成后腔（310），其中后腔（310）位于第二硅层（300）的对应于第一硅层 所述电极板120覆盖所述上电极板120对应区域面积的40％〜60％，并靠近所述悬臂梁130的一端。 暴露第二硅层（300），并悬挂上电极板（120）和悬臂梁（130）; 并在第二硅层（300）上分别形成上接触电极（400）和下接触电极（500）。

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