Abstract:
A photomultiplier has a focusing electrode plate (7) for supporting focusing electrodes, provided between a photocathode (3) and a dynode unit (60). Since the focusing electrode plate has holding springs (7a,7b) which are integrally formed with the focusing electrode plate, resistance-welding becomes unnecessary to prevent field discharge. A concave portion is formed in a main surface of the focusing electrode plate to arrange an insulating member (8a,8b) sandwiched between the focusing electrode plate and the photoelectron incidence side of the dynode unit and partially in contact with the concave portion. With this structure, discharge between the focusing electrode plate and the dynode unit can be prevented.
Abstract:
A photomultiplier is constituted by a photocathode and an electron multiplier having a typical structure in which a dynode unit having a plurality of dynode plates stacked in an incident direction of photoelectrons, an anode plate, and an inverting dynode plate are sequentially stacked. Through holes (101) for injecting a metal vapor are formed in the inverting dynode plate (13) to form secondary electron emitting layers on the surfaces of dynodes supported by the dynode plates, and the photocathode. With this structure, the secondary electron emitting layers are uniformly formed on the surfaces of the dynodes. Therefore, variations in output signals obtained from anodes can be reduced regardless of the positions of the photocathode.
Abstract:
A photomultiplier is constituted by a photocathode and an electron multiplier having a typical structure in which a dynode unit having a plurality of dynode plates stacked in an incident direction of photoelectrons, an anode plate, and an inverting dynode plate are sequentially stacked. Through holes (101) for injecting a metal vapor are formed in the inverting dynode plate (13) to form secondary electron emitting layers on the surfaces of dynodes supported by the dynode plates, and the photocathode. With this structure, the secondary electron emitting layers are uniformly formed on the surfaces of the dynodes. Therefore, variations in output signals obtained from anodes can be reduced regardless of the positions of the photocathode.
Abstract:
A semiconductor photoelectric surface comprises a support substrate (10), a photoelectric surface (30) which is formed by forming multiple semiconductor layers on the support substrate (10), and emits photoelectrons from a photoelectron emitting surface (341) in response to an incident beam for detection, and a film metal electrode (35) which is formed into a film so as to cover at least partially the support substrate (10) and partially the photoelectric surface (30) and is in ohmic contact with the photoelectric surface. The film metal electrode (35) contains titanium. The photoelectron emitting surface (341) which is not covered with the film metal electrode (35) and is an exposed surface of the photoelectric surface (30) has a negative electron affinity.
Abstract:
To prevent the deterioration in sensitivity of the photoelectric surface (20) of an electron tube and maintain stable output for a long time, an ion confinement electrode (22) and an ion trap electrode (23) are provided between the photoelectric surface (20) and a dynode (24a) of a first stage. The potential of the ion confinement electrode (22) is set higher than that of the dynode (24a) of the first stage, while the potential of the ion trap electrode (23) is set equal to or higher than that of the photoelectric surface (20) and lower than that of the dynode (24a) of the first stage. Since the feedback to the photoelectric surface (20) of the positive ions generated in the vicinity of the dynode (24a) of the first stage can be effectively suppressed, the sensitivity of the photoelectric surface (20) is prevented from decreasing, and stable output is maintained for a long time.
Abstract:
PURPOSE:To obtain a peak or bottom level detector in which a peak level or a bottom level of an input signal is detected at a high speed and a detected output is kept for a long time. CONSTITUTION:A 1st peak detection circuit A detects a peak level at a high speed and the storage time of the charge stored in a capacitor CA is short. A 2nd peak detection circuit B has a somewhat slow operating speed and the storage time of the charge stored in a capacitor CB is long. The arithmetic operation circuit C takes the sum of detection outputs of the circuits A, B. Furthermore, a very small current source circuit D extracts very small currents from the capacitors CA, CB and a discharge time constant of the charge stored in the capacitors CA, CB is controlled. A peak level or a bottom level outputted from the arithmetic operation circuit C are provided as an output at a high speed by the circuit A and kept for a long time by the circuits B, D.