公开(公告)号：JPH06310697A

公开(公告)日：1994-11-04

申请号：JP10117993

申请日：1993-04-27

Applicant: HAMAMATSU PHOTONICS KK

Inventor： NODA KOJI ,  YAMANAKA TATSUMI

IPC: H01L27/146

Abstract: PURPOSE:To prevent light obliquely entering a light-receiving surface from entering as far as the joint of PN junction and surface oxide film by forming a polysilicon film having shading properties so that the polysilicon film covers a stepped part by the thin and thick parts of silicon oxide film. CONSTITUTION:P-type impurity layer 11 is buried in the predetermined surface layer part of N-type semiconductor substrate 10 and silicon oxide film 12 is further laminated on the P-type impurity layer 11 and N-type semiconductor substrate 10. In this case, the silicon oxide film 12 is formed into a stepped shape, in which the oxide film is thin in a light-receiving region W and its peripheral region w1 and thick outside these regions. Also, a polysilicon film 13 being a shading film to be laminated outside the light-recovering region W along the stepped shape of the region is formed on the upside of the silicon oxide film 12. Thus, it is possible to prevent light entering obliquely from entering the joint of PN junction and silicon oxide film.

公开(公告)号：JPH04111480A

公开(公告)日：1992-04-13

申请号：JP23020490

申请日：1990-08-31

Applicant: HAMAMATSU PHOTONICS KK

Inventor： TOMITA TOSHIHIKO ,  TANAKA HITOSHI ,  YAMANAKA TATSUMI ,  INOSE YUKIO

IPC: H01L31/16

Abstract: PURPOSE:To make the electric field between electrodes uniform so as to make the error in position detection small by putting a semiconductor layer and a signal takeout electrode in specified structure, in a two-dimensional light position detector which forms said semiconductor layer by doping the surface of the light receiving pat of the first conductivity type (for example, N type) of a semiconductor substrate with second conductivity type(for example, P type) of impurities. CONSTITUTION:A comb-shaped striped pattern 13 comprises branched conductors 13c to become comb teeth, a P-type base resistor 13r, which is connected to one part each of them, and signal takeout electrodes 13e, which are connected to both ends of the P-type base resistor 13r. On the other hand, a striped pattern 14 comprises a pair of electrodes 14e for taking out signals such as Al, etc., which are extended in X direction, and a plurality of P-type resistors 14r, which are arranged in stripe shape between these signal takeout electrodes 14e. The coordinate position in X direction can be specified by the current value outputted in parts from the signal takeout electrodes 13e through the P-type base resistor 13r. Moreover, the coordinate position in Y direction can be specified by the current values outputted in parts from the signal takeout electrode 14e through the P-type resistor 14r.