中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

34 records (took 0.039 seconds)

    MICRORESONANTOR SYSTEMS AND METHODS OF FABRICATING THE SAME
    21.
    发明申请
    MICRORESONANTOR SYSTEMS AND METHODS OF FABRICATING THE SAME 审中-公开
    微型助剂系统及其制备方法

    公开(公告)号：WO2009017770A3

    公开(公告)日：2009-04-02

    申请号：PCT/US2008009225

    申请日：2008-07-30

    Applicant: HEWLETT PACKARD DEVELOPMENT CO ,  TAN MICHAEL ,  WANG SHIH-YUAN ,  STEWART DUNCAN ,  FATTAL DAVID

    Inventor： TAN MICHAEL ,  WANG SHIH-YUAN ,  STEWART DUNCAN ,  FATTAL DAVID

    IPC: H01S3/08 ,  H01S3/109

    CPC classification number: H01S5/1075 ,  B82Y20/00 ,  G02B6/12007 ,  H01S5/026 ,  H01S5/0424 ,  H01S5/1032 ,  H01S5/1042 ,  H01S5/34306

    Abstract: Various embodiments of the present invention are related to microresonator systems and to methods of fabricating the microresonator systems. In one embodiment, a microresonator system (200) comprises a substrate (206) having a top surface layer (204) and at least one waveguide (214,216) embedded in the substrate and positioned adjacent to the top surface layer of the substrate. The microresonator system also includes a microresonator (202,402) having a top layer (218), an intermediate layer (222), a bottom layer (220), a peripheral region, and a peripheral coating (224). The bottom layer (220) of the microresonator is attached to and in electrical communication with the top surface layer (204) of the substrate. The microresonator is positioned so that at least a portion of the peripheral region is located above the at least one waveguide (214, 216). The peripheral coating (224) covers at least a portion of the peripheral surface and has a relatively lower index of refraction than the top, intermediate, and bottom layers of the microresonator.

    Abstract translation: 本发明的各种实施例涉及微谐振器系统和制造微谐振器系统的方法。 在一个实施例中，微谐振器系统（200）包括具有顶表面层（204）和至少一个波导（214,216）的衬底（206），所述波导嵌入衬底中并且与衬底的顶表面层相邻定位。 微谐振器系统还包括具有顶层（218），中间层（222），底层（220），周边区域和周边涂层（224）的微谐振器（202,402）。 微谐振器的底层（220）附着于基底的顶表面层（204）并与之电连通。 微谐振器被定位成使得外围区域的至少一部分位于至少一个波导（214,216）的上方。 外围涂层（224）覆盖周边表面的至少一部分并且具有比微谐振器的顶层，中间层和底层低的折射率。

    ELECTRIC-FIELD-ENHANCEMENT STRUCTURE AND DETECTION APPARATUS USING SAME
    22.
    发明申请
    ELECTRIC-FIELD-ENHANCEMENT STRUCTURE AND DETECTION APPARATUS USING SAME 审中-公开
    使用相同的电场增强结构和检测装置

    公开(公告)号：WO2009002524A2

    公开(公告)日：2008-12-31

    申请号：PCT/US2008007934

    申请日：2008-06-25

    Applicant: HEWLETT PACKARD DEVELOPMENT CO ,  FATTAL DAVID ,  LI ZHIYONG ,  TONG WILLIAM ,  STEWART DUNCAN ,  BLACXSTOCK JASON

    Inventor： FATTAL DAVID ,  LI ZHIYONG ,  TONG WILLIAM ,  STEWART DUNCAN ,  BLACXSTOCK JASON

    IPC: G01J3/44

    CPC classification number: G02B6/1226 ,  B82Y15/00 ,  B82Y20/00 ,  G01N21/35 ,  G01N21/554 ,  G01N21/658 ,  G02B5/008

    Abstract: Various aspects of the prsent invention are directed to electric-field-enhancement structures (100) and detection apparatuses (600, 700, 800) that employ such electric-field-enhancement structures. In one aspect of the present invention, an electric-field-enhancement structure (100) includes a substrate (102) having a surface (104). The substrate (102) is capable of supporting a planar mode (114) having a planar-mode frequency. A plurality of nanofeatures (106) is associated with the surface (104), and each of nanofeatures (106) exhibits a localized-surface-plasmon mode (116) having a localized-surface-plasmon frequency approximately equal to the planar-mode frequency.

    Abstract translation: 本发明的各个方面涉及采用这种电场增强结构的电场增强结构（100）和检测装置（600,700,800）。 在本发明的一个方面，电场增强结构（100）包括具有表面（104）的基底（102）。 基板（102）能够支撑具有平面模式频率的平面模式（114）。 多个纳米尺度（106）与表面（104）相关联，并且纳米尺度（106）中的每一个表现出具有近似等于平面模式频率的局部表面等离子体激元频率的局部表面等离子体模式（116） 。

    TUNNELING-RESISTOR-JUNCTION-BASED MICROSCALE/NANOSCALE DEMULTIPLEXER ARRAYS
    23.
    发明申请
    TUNNELING-RESISTOR-JUNCTION-BASED MICROSCALE/NANOSCALE DEMULTIPLEXER ARRAYS 审中-公开
    基于隧穿 - 电阻 - 结点的微型/纳米级解复用器阵列

    公开(公告)号：WO2007089802A2

    公开(公告)日：2007-08-09

    申请号：PCT/US2007002577

    申请日：2007-01-30

    Applicant: HEWLETT PACKARD DEVELOPMENT CO ,  ROBINETT WARREN ,  SNIDER GREGORY S ,  STEWART DUNCAN ,  STRAZNICKY JOSEPH

    Inventor： ROBINETT WARREN ,  SNIDER GREGORY S ,  STEWART DUNCAN ,  STRAZNICKY JOSEPH

    CPC classification number: G11C8/10 ,  G11C13/0023 ,  H03M13/51

    Abstract: Various embodiments of the present invention are directed to demultiplexers that include tunneling resistor nanowire junctions, and to nanowire addressing methods for reliably addressing nanowire signal lines in nanoscale and mixed-scale demultiplexers. In one embodimentof the present invention, an encoder-demulriplexer comprises a number of input signal lines and an encoder (1304) that generates an n-bit-constant-weight-code code-word internal address (1320, 1506, 1704) for each different input address (1318, 1702) received on the input signal lines. The encoder-demultiplexer also includes n microscale signal lines (1306-1311) on which an n-bit-constant-weight-code code word internal address is out put by the encoder and a number of encoder-demultiplexer-addressed nanowire signal lines interconnected with then microscale signal lines (1306-1311) via tunneling resistor junctions, the encoder-demultiplexer-addressed nanowire signal lines each associated with an n-bit-constant-weight-code code-word internal adress (1320, 1506, 1704).

    Abstract translation: 本发明的各种实施例涉及包括隧道电阻器纳米线结的解复用器，并且涉及用于在纳米级和混合尺度解复用器中可靠地寻址纳米线信号线的纳米线寻址方法。 在本发明的一个实施例中，编码器 - 解复用器包括多个输入信号线和编码器（1304），编码器（1304）为每个输入信号线生成n位恒定加权码字内部地址（1320,1506,1704） 在输入信号线上接收不同的输入地址（1318,1702）。 编码器 - 解复用器还包括n个微型信号线（1306-1311），编码器输出n位恒定加权码字内部地址，并且编码器 - 解复用器寻址的纳米线信号线互连 与经由隧道电阻器结的微米级信号线（1306-1311）相连，所述编码器 - 解复用器寻址的纳米线信号线均与n位恒定重量码码字内部地址（1320,1506,1704）相关联。

    CONTACT LITHOGRAPHY APPARATUS, SYSTEM AND METHOD
    26.
    发明申请
    CONTACT LITHOGRAPHY APPARATUS, SYSTEM AND METHOD 审中-公开
    联系人地平线设备，系统和方法

    公开(公告)号：WO2008048215A3

    公开(公告)日：2008-07-24

    申请号：PCT/US2006028299

    申请日：2006-07-21

    Applicant: HEWLETT PACKARD DEVELOPMENT CO ,  STEWART DUNCAN ,  WU WEI

    Inventor： STEWART DUNCAN ,  WU WEI

    IPC: G03F7/00 ,  G03F7/20

    CPC classification number: G03F7/7035 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

    Abstract: A contact lithography apparatus (100,220), system (200) and method (300) use a deformation (320) to facilitate pattern transfer (300). The apparatus (100,220), system (200) and method 300 include a spacer (120,226) that provides a spaced apart parallel and proximal orientation 310 of lithographic elements, such as a mask (110,228a,222) and a substrate (130,228b,224), when in mutual contact with the spacer (120,226). One or more of the mask (110,228a,222), the substrate (130,228b,224) and the spacer (120,226) is deformable, such that deformation (320) thereof facilitates the pattern transfer (300).

    Abstract translation: 接触光刻设备（100,220），系统（200）和方法（300）使用变形（320）以便于图案转印（300）。 设备（100,220），系统（200）和方法300包括间隔物（120,226），其提供光刻元件的间隔开的平行和近端取向310，例如掩模（110,228a，222）和基底（130,228b， 224），当与间隔物（120,226）相互接触时。 掩模（110,228a，222），基板（130,228b，224）和间隔件（120,226）中的一个或多个可变形，使得其变形（320）有助于图案转印（300）。

Patent Agency Ranking