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公开(公告)号：CA2669907A1
公开(公告)日：2008-07-10
申请号：CA2669907
申请日：2007-09-25
Applicant: IBM
Inventor： ROMANKIW LUBOMYR T , DELIGIANNI HARIKLIA , HUANG QIANG
Abstract: A memory storage device that contains alternating first and second ferrom agnetic material layers is provided. Each first ferromagnetic material layer has a first layer thickness (L1) and a first critical current density (JC1) , and each second ferromagnetic material layer has a second layer thickness (L2) and a second critical current density (JC2), provided that JC1
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