公开(公告)号：EP1846947A4

公开(公告)日：2009-04-15

申请号：EP05852630

申请日：2005-12-02

Applicant: IBM

Inventor： VEREECKEN PHILIPPE M ,  BASKER VEERARAGHAVAN ,  CABRAL CYRIL JR ,  COOPER EMANUEL I ,  DELIGIANNI HARIKLIA ,  FRANK MARTIN M ,  JAMMY RAJARAO ,  PARUCHURI VAMSI KRISHNA ,  SAENGER KATHERINE L ,  SHAO XIAOYAN

IPC: H01L21/302 ,  H01L29/745

CPC classification number: H01L21/2885 ,  C25D3/50 ,  C25D5/02 ,  C25D5/024 ,  C25D5/54 ,  C25D7/123 ,  C25D9/04 ,  C25F3/14 ,  H01L21/28079 ,  H01L21/28114 ,  H01L21/76885 ,  H01L29/513 ,  H01L29/517 ,  H01L29/78648

Abstract: A method for electroplating a gate metal (9) or other conducting or semiconducting material on a gate dielectric (2) is provided. The method involves selecting a substrate (3, 4), dielectric layer, and electrolyte solution or melt, wherein the combination of the substrate, dielectric layer, and electrolyte solution or melt allow an electrochemical current to be generated at an interface between the dielectric layer and the electrolyte solution or melt.

公开(公告)号：EP2126920A4

公开(公告)日：2010-03-10

申请号：EP07838782

申请日：2007-09-25

Applicant: IBM

Inventor： DELIGIANNI HARIKLIA ,  HUANG QIANG ,  ROMANKIW LUBOMYR T

IPC: G11C11/00

CPC classification number: G11C19/0808 ,  G11C11/161 ,  G11C11/1675 ,  Y10S977/933

公开(公告)号：EP2232548A4

公开(公告)日：2013-02-27

申请号：EP08866597

申请日：2008-12-22

Applicant: IBM

Inventor： BASKER VEERARAGHAVAN S ,  PARUCHURI VAMSI ,  COTTE JOHN M ,  FURUKAWA TOSHIHARU ,  TONTI WILLIAM ,  DELIGIANNI HARIKLIA

IPC: H01L21/8238 ,  H01L29/66

CPC classification number: H01L21/823842 ,  H01L29/517 ,  H01L29/66545

公开(公告)号：WO2011029706A3

公开(公告)日：2011-09-15

申请号：PCT/EP2010062081

申请日：2010-08-19

Applicant: IBM ,  IBM UK ,  VAIDYANATHAN RAMAN ,  DELIGIANNI HARIKLIA ,  HOVEL HAROLD JOHN

Inventor： VAIDYANATHAN RAMAN ,  DELIGIANNI HARIKLIA ,  HOVEL HAROLD JOHN

IPC: H01L31/18 ,  H01L31/032 ,  H01L31/0336

CPC classification number: H01L31/0749 ,  H01L31/0322 ,  Y02E10/541

Abstract: A method of reducing the loss of elements of a photovoltaic thin film structure during an annealing process, includes depositing a thin film on a substrate, wherein the thin film includes a single chemical element or a chemical compound, coating the thin film with a protective layer to form a coated thin film structure, wherein the protective layer prevents part of the single chemical element or part of the chemical compound from escaping during an annealing process, and annealing the coated thin film structure to form a coated photovoltaic thin film structure, wherein the coated photovoltaic thin film retains the part of the single chemical element or the part of the chemical compound that is prevented from escaping during the annealing by the protective layer..

Abstract translation: 在退火过程中减少光伏薄膜结构元件损耗的方法包括在基底上沉积薄膜，其中薄膜包括单一化学元素或化学化合物，用保护层涂覆薄膜 以形成涂覆的薄膜结构，其中所述保护层在退火过程期间防止单个化学元素或部分化合物的一部分逸出，并且对涂覆的薄膜结构进行退火以形成涂覆的光伏薄膜结构，其中 涂覆的光伏薄膜保留单一化学元素的一部分或化学化合物的部分在退火过程中通过保护层防止逸出。

公开(公告)号：EP1841558A4

公开(公告)日：2012-04-04

申请号：EP05852628

申请日：2005-12-02

Applicant: IBM

Inventor： ANDRICACOS PANAYOTIS C ,  CANAPERI DONALD F ,  COOPER ENAMUEL I ,  COTTE JOHN M ,  DELIGIANNI HARIKLIA ,  ECONOMIKOS LAERTIS ,  EDELSTEIN DANIEL C ,  FRANZ SILVIA ,  PRANATHARTHIHARAN BALASUBRAMANIAN ,  KRISHNAN MAHADEVAIYER ,  MANSSON ANDREW P ,  WALTON ERICK G ,  WEST ALAN C

IPC: B23H3/00 ,  B23H5/08

CPC classification number: C25F3/02 ,  B23H5/08 ,  C09G1/04 ,  H01L21/32125

公开(公告)号：WO2012028416A3

公开(公告)日：2012-09-13

申请号：PCT/EP2011063561

申请日：2011-08-05

Applicant: IBM ,  IBM UK ,  AHMED SHAFAAT ,  DELIGIANNI HARIKLIA

Inventor： AHMED SHAFAAT ,  DELIGIANNI HARIKLIA

IPC: C25D3/54 ,  C25D3/56 ,  H01L21/02

CPC classification number: C25D3/54 ,  C25D3/56

Abstract: Solutions and processes for electrodepositing gallium or gallium alloys includes a plating bath free of complexing agents including a gallium salt, an indium salt, a combination thereof, and a combination of any of the preceding salts with copper, an acid, and a solvent, wherein the pH of the solution is in a range selected from the group consisting of from about zero to about 2.6 and greater than about 12.6 to about 14. An optional metalloid may be included in the solution.

Abstract translation: 用于电沉积镓或镓合金的溶液和方法包括不含络合剂的电镀浴，所述络合剂包括镓盐，铟盐，其组合以及任何前述盐与铜，酸和溶剂的组合，其中 溶液的pH值在从约0至约2.6和大于约12.6至约14的范围内选择。溶液中可以包含任选的准金属。

公开(公告)号：EP2100319A4

公开(公告)日：2013-04-03

申请号：EP08712915

申请日：2008-01-02

Applicant: IBM

Inventor： DELIGIANNI HARIKLIA ,  HUANG QIANG ,  HUMMEL JOHN P ,  ROMANKIW LUBOMYR T ,  ROTHWELL MARY B

IPC: H01H51/00

CPC classification number: H01L21/76879 ,  H01L21/2885 ,  Y10S205/925

公开(公告)号：EP2118914A4

公开(公告)日：2012-01-18

申请号：EP07874503

申请日：2007-09-25

Applicant: IBM

Inventor： DELIGIANNI HARIKLIA ,  HUANG QIANG ,  ROMANKIW LUBOMYR T

IPC: H01F1/00 ,  B82Y25/00 ,  C25D5/02 ,  C25D5/10 ,  C25D5/18 ,  H01F10/12 ,  H01F41/26

CPC classification number: C25D5/022 ,  B82Y25/00 ,  C25D3/562 ,  C25D5/10 ,  C25D5/18 ,  H01F1/0072 ,  H01F41/26 ,  Y10S977/762 ,  Y10S977/81 ,  Y10S977/838 ,  Y10T428/12028 ,  Y10T428/12465 ,  Y10T428/12493 ,  Y10T428/12931 ,  Y10T428/12944 ,  Y10T428/12951 ,  Y10T428/12986 ,  Y10T428/24967 ,  Y10T428/2982

公开(公告)号：EP1535296A4

公开(公告)日：2007-04-04

申请号：EP02746591

申请日：2002-06-14

Applicant: IBM

Inventor： DELIGIANNI HARIKLIA ,  GREENBERG DAVID R ,  JAHNES CHRISTOPHER V ,  LUND JENNIFER L ,  SAENGER KATHERINE L ,  VOLANT RICHARD P

IPC: H01H57/00 ,  H01H59/00 ,  H01L21/00

CPC classification number: H01H59/0009

Abstract: A micro-electromechanical switch (MEMS) having a deformable elastomeric element (1) which exhibits a large change in conductivity with a small amount of displacement. The deformable elastomeric element (1) is displaced by an electrostatic force that is applied laterally resulting in a small transverse displacement. The transversal displacement, in turn, pushes a metallic contact (7) against two conductive paths (5, 6), allowing passage of electrical signals. The elastomer (1) is provided on two opposing sids with embedded metallic elements (9, 10), such as impregnated metallic rods, metallic sheets, metallic particles, or conductive paste. Actuation electrodes (18, 8) are placed parallel to the conductive sides of the elastomer. A voltage applied between the conductive side of the elastomer and the respective actuation electrodes (18, 8) generate the electrostatic attractive force that compresses the elastomer (1), creating the transverse displacement that closes the MEMS. The elastomeric based MEMS extends the lifetime of the switch by extending fatigue life of the deformable switch elements.

公开(公告)号：EP1560949A4

公开(公告)日：2007-02-28

申请号：EP03783387

申请日：2003-11-14

Applicant: IBM

Inventor： ECONOMIKOS LAERTIS ,  DELIGIANNI HARIKLIA ,  COTTE JOHN M ,  GRABARZ HENRY J ,  CHEN BOMY

IPC: C25D5/48 ,  C25D7/12 ,  H01L21/288 ,  H01L21/321 ,  H01L21/768 ,  C25D5/22 ,  C25D17/00

CPC classification number: C25D7/123 ,  C25D5/48 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/3212 ,  H01L21/32125 ,  H01L21/7684 ,  Y10S205/917

Abstract: A method and apparatus are described for performing both electroplating of a metal layer and CMP planarization of the layer on a substrate. The apparatus includes a table (10) supporting a polishing pad (20); the table and pad have a plurality of holes (210, 220) forming channels for dispensing an electroplating solution onto the pad. Electroplating anodes (201, 202, 203) are disposed in the channels and in contact with the electroplating solution. A carrier (12) holds the substrate (1) substantially parallel to the top surface of the pad (20) and applies variable mechanical force on the substrate against the pad, so that the spacing between substrate and pad may be less during electroplating than during electroetching.