Patent search ap:("IBM") AND inv:"JACKSON THOMAS NELSON" Page 3

21.

发明专利
METHOD OF FORMING A SUBMICRON WIDTH CONDUCTOR AND METHOD OF FORMING A FIELD EFFECT TRANSISTOR INCORPORATING SUCH A CONDUCTOR AS A GATE ELECTRODE 未知

公开(公告)号：DE3367696D1

公开(公告)日：1987-01-02

申请号：DE3367696

申请日：1983-12-01

Applicant: IBM

Inventor： JACKSON THOMAS NELSON

IPC: H01L29/812 , H01L21/033 , H01L21/265 , H01L21/28 , H01L21/285 , H01L21/338 , H01L29/417 , H01L29/64

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