公开(公告)号：DE3568110D1

公开(公告)日：1989-03-09

申请号：DE3568110

申请日：1985-06-19

Applicant: IBM

Inventor： SOLOMON PAUL MICHAEL

IPC: H01L29/80 ,  H01L29/205 ,  H01L29/36 ,  H01L29/861 ,  H01L29/90

公开(公告)号：DE3378944D1

公开(公告)日：1989-02-16

申请号：DE3378944

申请日：1983-02-01

Applicant: IBM

Inventor： SOLOMON PAUL MICHAEL

IPC: H01L29/73 ,  H01L21/331 ,  H01L21/338 ,  H01L29/201 ,  H01L29/76 ,  H01L29/778 ,  H01L29/80 ,  H01L29/812 ,  H01L29/10 ,  H01L29/72

Abstract: O A field induced base ballistic majority carrier transfer transistor comprises first and second epitaxial semi- conductor regions (1, 2) of the same conductivity type, the conductivity of the second region (2) being lower than that of the first region (1) and the second region having a lower energy bandgap than the first region. An emitter electrode (5) is connected, via a high conductivity region (3) epitaxial with the second region (2), to the side of the second region remote from the interface (8). A base electrode (6) makes contact with a part of the second region adjacent the interface (8), and a collector electrode (7) is connected to the side of the first region (1) remote from the interface (8).If the transistor is formed of n-type materials, application of a bias voltage across the emitter and base electrodes produces an accumulation layer (9) which serves as the base of the transistor, in the second region (2) adjacent the interface (8).

公开(公告)号：DE3269791D1

公开(公告)日：1986-04-17

申请号：DE3269791

申请日：1982-05-28

Applicant: IBM

Inventor： SOLOMON PAUL MICHAEL ,  WIEDMANN SIEGFRIED KURT

IPC: H03K17/60 ,  H03K19/00 ,  H03K19/013 ,  H03K19/088