公开(公告)号：US10796988B2

公开(公告)日：2020-10-06

申请号：US16002740

申请日：2018-06-07

Applicant: Intel Corporation

Inventor： Robert Starkston ,  Debendra Mallik ,  John S. Guzek ,  Chia-Pin Chiu ,  Deepak Kulkarni ,  Ravi V. Mahajan

IPC: H01L23/52 ,  H01L23/522 ,  H01L25/00 ,  H01L23/00 ,  H01L25/065 ,  H01L23/538 ,  H01L21/56 ,  H01L25/18

Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

公开(公告)号：US10763216B2

公开(公告)日：2020-09-01

申请号：US16677533

申请日：2019-11-07

Applicant: Intel Corporation

Inventor： Henning Braunisch ,  Chia-Pin Chiu ,  Aleksandar Aleksov ,  Hinmeng Au ,  Stefanie M. Lotz ,  Johanna M. Swan ,  Sujit Sharan

IPC: H01L23/538 ,  H01L23/13 ,  H01L23/00 ,  H01L25/065 ,  H01L21/683

Abstract: A multi-chip package includes a substrate (110) having a first side (111), an opposing second side (112), and a third side (213) that extends from the first side to the second side, a first die (120) attached to the first side of the substrate and a second die (130) attached to the first side of the substrate, and a bridge (140) adjacent to the third side of the substrate and attached to the first die and to the second die. No portion of the substrate is underneath the bridge. The bridge creates a connection between the first die and the second die. Alternatively, the bridge may be disposed in a cavity (615, 915) in the substrate or between the substrate and a die layer (750). The bridge may constitute an active die and may be attached to the substrate using wirebonds (241, 841, 1141, 1541).

公开(公告)号：US20200211927A1

公开(公告)日：2020-07-02

申请号：US16233808

申请日：2018-12-27

Applicant: Intel Corporation

Inventor： Zhimin Wan ,  Cheng Xu ,  Yikang Deng ,  Junnan Zhao ,  Ying Wang ,  Chong Zhang ,  Kyu Oh Lee ,  Chandra Mohan Jha ,  Chia-Pin Chiu

IPC: H01L23/473 ,  H01L21/48

Abstract: Microelectronic assemblies that include a cooling channel, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a package substrate having a surface, a die having a surface, and a fluidic channel between the surface of the die and the surface of the package substrate, wherein a top surface of the fluidic channel is defined by the surface of the die and a bottom surface of the fluidic channel is defined by the surface of the package substrate. In some embodiments, a microelectronic assembly may include a package substrate having a surface; a die having a surface; and an interposer having a fluidic channel between the surface of the die and the surface of the package substrate.

公开(公告)号：US20190393180A1

公开(公告)日：2019-12-26

申请号：US16561965

申请日：2019-09-05

Applicant: Intel Corporation

Inventor： Weng Hong Teh ,  Chia-Pin Chiu

IPC: H01L23/00 ,  H01L23/31 ,  H01L25/18 ,  H01L23/50 ,  H01L25/16 ,  H01L23/538

Abstract: Discussed generally herein are devices that include high density interconnects between dice and techniques for making and using those devices. In one or more embodiments a device can include a bumpless buildup layer (BBUL) substrate including a first die at least partially embedded in the BBUL substrate, the first die including a first plurality of high density interconnect pads. A second die can be at least partially embedded in the BRIM substrate, the second die including a second plurality of high density interconnect pads. A high density interconnect element can be embedded in the BBUL substrate, the high density interconnect element including a third plurality of high density interconnect pads electrically coupled to the first and second plurality of high density interconnect pads.

公开(公告)号：US10510669B2

公开(公告)日：2019-12-17

申请号：US15876080

申请日：2018-01-19

Applicant: Intel Corporation

Inventor： Henning Braunisch ,  Chia-Pin Chiu ,  Aleksandar Aleksov ,  Hinmeng Au ,  Stefanie M. Lotz ,  Johanna M. Swan ,  Sujit Sharan

IPC: H01L23/538 ,  H01L23/13 ,  H01L23/00 ,  H01L25/065 ,  H01L21/683

Abstract: A multi-chip package includes a substrate (110) having a first side (111), an opposing second side (112), and a third side (213) that extends from the first side to the second side, a first die (120) attached to the first side of the substrate and a second die (130) attached to the first side of the substrate, and a bridge (140) adjacent to the third side of the substrate and attached to the first die and to the second die. No portion of the substrate is underneath the bridge. The bridge creates a connection between the first die and the second die. Alternatively, the bridge may be disposed in a cavity (615, 915) in the substrate or between the substrate and a die layer (750). The bridge may constitute an active die and may be attached to the substrate using wirebonds (241, 841, 1141, 1541).

公开(公告)号：US10320051B2

公开(公告)日：2019-06-11

申请号：US15638715

申请日：2017-06-30

Applicant: Intel Corporation

Inventor： Chia-Pin Chiu

IPC: H01Q1/02 ,  H05K7/20

Abstract: A massive array antenna apparatus is configured with a cantilevered heat pipe that allows a semiconductive millimeter-wave device to move independently from a heat-sink base during thermal expansion and contraction.

公开(公告)号：US10256211B2

公开(公告)日：2019-04-09

申请号：US14655688

申请日：2014-07-28

Applicant: INTEL CORPORATION

Inventor： Chuan Hu ,  Chia-Pin Chiu ,  Johanna Swan

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/00 ,  H01L23/31 ,  H01L21/56 ,  H01L23/538 ,  H01L21/48 ,  H01L23/498

Abstract: An apparatus is described having a build-up layer. The build-up layer has a pad side of multiple die pressed into a bottom side of the build-up layer. The multiple die have wide pads to facilitate on wafer testing of the multiple die. The wide pads are spaced a minimum distance permitted by a manufacturing process used to manufacture their respective die. The build-up layer above the wide pads is removed. The apparatus also includes metallization on a top side of the build-up layer that substantially fills regions above the wide pads. The metallization includes lands above the wide pads and multiple wires between the wide pads.

公开(公告)号：US20170053887A1

公开(公告)日：2017-02-23

申请号：US15255351

申请日：2016-09-02

Applicant: Intel Corporation

Inventor： Weng Hong Teh ,  Chia-Pin Chiu

IPC: H01L23/00 ,  H01L23/538 ,  H01L23/31 ,  H01L23/50 ,  H01L25/18

CPC classification number: H01L24/25 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3128 ,  H01L23/50 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/24 ,  H01L25/16 ,  H01L25/18 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/2501 ,  H01L2224/2505 ,  H01L2224/2512 ,  H01L2224/255 ,  H01L2224/73209 ,  H01L2224/81005 ,  H01L2224/92133 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/141 ,  H01L2924/1431 ,  H01L2924/1461 ,  H01L2924/15151 ,  H01L2924/15192 ,  H01L2924/15747 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/00

Abstract: Discussed generally herein are devices that include high density interconnects between dice and techniques for making and using those devices. In one or more embodiments a device can include a bumpless buildup layer (BBUL) substrate including a first die at least partially embedded in the BBUL substrate, the first die including a first plurality of high density interconnect pads. A second die can be at least partially embedded in the BBUL substrate, the second die including a second plurality of high density interconnect pads. A high density interconnect element can be embedded in the BBUL substrate, the high density interconnect element including a third plurality of high density interconnect pads electrically coupled to the first and second plurality of high density interconnect pads.

Abstract translation: 这里通常讨论的是包括骰子之间的高密度互连和用于制造和使用这些设备的技术的设备。 在一个或多个实施例中，器件可以包括无冲突构建层（BBUL）衬底，其包括至少部分地嵌入在BBUL衬底中的第一管芯，第一管芯包括第一多个高密度互连焊盘。 第二管芯可以至少部分地嵌入在BBUL衬底中，第二管芯包括第二多个高密度互连焊盘。 高密度互连元件可以嵌入在BBUL基板中，高密度互连元件包括电耦合到第一和第二多个高密度互连焊盘的第三多个高密度互连焊盘。

公开(公告)号：US09520376B2

公开(公告)日：2016-12-13

申请号：US14875247

申请日：2015-10-05

Applicant: Intel Corporation

Inventor： Weng Hong Teh ,  Deepak Kulkarni ,  Chia-Pin Chiu ,  Tannaz Harirchian ,  John S. Guzek

IPC: H01L23/28 ,  H01L23/00 ,  H01L23/367 ,  H01L23/433 ,  H01L23/498 ,  H01L23/538 ,  H01L23/36 ,  H01L21/56 ,  H01L23/34 ,  H01L25/18

CPC classification number: H01L24/20 ,  H01L21/56 ,  H01L23/34 ,  H01L23/36 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/49822 ,  H01L23/5389 ,  H01L24/19 ,  H01L25/18 ,  H01L2224/04105 ,  H01L2224/06181 ,  H01L2224/16145 ,  H01L2224/211 ,  H01L2224/32245 ,  H01L2224/73203 ,  H01L2224/73259 ,  H01L2224/73267 ,  H01L2924/10253 ,  H01L2924/15747 ,  H01L2924/00

Abstract: An example includes a die package including a microelectronic die having a lower die surface, an upper die surface parallel to the lower die surface, and a die side, the microelectronic die including an active region and an inactive region. The example optionally includes a heat spreader having a lower heat spreader surface, an upper heat spreader surface parallel to the lower heat spreader surface, and at least one heat spreader side, the heat spreader disposed on the upper surface of the microelectronic die in thermal communication with the inactive region of the die and electrically insulated from the active region. The example optionally includes an encapsulation material encapsulating the die side and the heat spreader side and lower heat spreader surface, the encapsulation material including a lower surface substantially parallel to the die lower surface and an upper surface substantially parallel to the die upper surface.

公开(公告)号：US20160043056A1

公开(公告)日：2016-02-11

申请号：US14886452

申请日：2015-10-19

Applicant: INTEL CORPORATION

Inventor： Chia-Pin Chiu ,  Qing Ma ,  Robert L. Sankman ,  Paul B. Fischer ,  Patrick Morrow ,  William J. Lambert ,  Charles A. Gealer ,  Tyler Osborn

IPC: H01L25/065 ,  H01L23/31 ,  H01L23/15 ,  H01L23/538

CPC classification number: H01L25/0655 ,  H01L21/4803 ,  H01L21/561 ,  H01L21/568 ,  H01L23/15 ,  H01L23/3121 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/24137 ,  H01L2224/2499 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/00

Abstract: A die assembly formed on a thin dielectric sheet is described. In one example, a first and a second die have interconnect areas. A dielectric sheet is over the interconnect areas of the first and the second die. Conductive vias in the dielectric sheet connect with pads of the interconnect areas. A build-up layer over the dielectric sheet includes routing to connect pads of the first die interconnect area to pads of the second die interconnect area through the conductive vias. The dies are mounted to a package substrate through the build-up layers, and a package cover is over the dies, the dielectric sheet, and the build-up layer.

Abstract translation: 描述了形成在薄介电片上的模具组件。 在一个示例中，第一和第二管芯具有互连区域。 电介质片在第一和第二管芯的互连区域之上。 电介质片中的导电孔与连接区的焊盘相连。 电介质片上的堆积层包括通过导电通孔将第一管芯互连区的焊盘连接到第二管芯互连区的焊盘的布线。 模具通过堆积层安装到封装衬底上，并且封装盖在模具，电介质层和堆积层之上。