公开(公告)号：US12154715B2

公开(公告)日：2024-11-26

申请号：US17873518

申请日：2022-07-26

Applicant: Intel Corporation

Inventor： Cheng Xu ,  Kyu-Oh Lee ,  Junnan Zhao ,  Rahul Jain ,  Ji Yong Park ,  Sai Vadlamani ,  Seo Young Kim

IPC: H01F27/28 ,  H01F27/02 ,  H01F27/24 ,  H05K1/18

Abstract: Embodiments include an inductor that comprises an inductor trace and a magnetic body surrounding the inductor trace. In an embodiment, the magnetic body comprises a first step surface and a second step surface. Additional embodiments include an inductor that includes a barrier layer. In an embodiment, an inductor trace is formed over a first surface of the barrier layer. Embodiments include a first magnetic body over the inductor trace and the first surface of the barrier layer, and a second magnetic body over a second surface of the barrier layer opposite the first surface. In an embodiment, a width of the second magnetic body is greater than a width of the first magnetic body.

公开(公告)号：US11830809B2

公开(公告)日：2023-11-28

申请号：US16829336

申请日：2020-03-25

Applicant: Intel Corporation

Inventor： Ying Wang ,  Yikang Deng ,  Junnan Zhao ,  Andrew James Brown ,  Cheng Xu ,  Kaladhar Radhakrishnan

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H01L49/02

CPC classification number: H01L23/5227 ,  H01L23/5226 ,  H01L23/5283 ,  H01L23/53209 ,  H01L23/53228 ,  H01L28/10

Abstract: Disclosed herein are magnetic structures in integrated circuit (IC) package supports, as well as related methods and devices. For example, in some embodiments, an IC package support may include a conductive line, a magnetic structure around the conductive line, and material stubs at side faces of the magnetic structure.

公开(公告)号：US11355459B2

公开(公告)日：2022-06-07

申请号：US15982652

申请日：2018-05-17

Applicant: Intel Corporation

Inventor： Kyu-Oh Lee ,  Sai Vadlamani ,  Rahul Jain ,  Junnan Zhao ,  Ji Yong Park ,  Cheng Xu ,  Seo Young Kim

IPC: H01L23/60 ,  H01L23/64 ,  H01L23/498 ,  H01L21/48 ,  H01L23/00 ,  H01F1/12 ,  H01F41/14

Abstract: Techniques for fabricating a semiconductor package having magnetic materials embedded therein are described. For one technique, fabrication of package includes: forming a pad and a conductive line on a build-up layer; forming a raised pad structure on the build-up layer, the raised pad comprising a pillar structure on the pad; encapsulating the conductive line and the raised pad structure in a magnetic film comprising one or more magnetic fillers; planarizing a top surface of the magnetic film until top surfaces of the raised pad structure and the magnetic film are co-planar; depositing a primer layer on the top surfaces; removing one or more portions of the primer layer above the raised pad structure to create an opening; and forming a via in the opening on the raised pad structure. The primer layer may comprise one or more of a build-up layer, a photoimageable dielectric layer, and a metal mask.

公开(公告)号：US11276634B2

公开(公告)日：2022-03-15

申请号：US16607601

申请日：2017-05-23

Applicant: Intel Corporation

Inventor： Srinivas V. Pietambaram ,  Rahul N. Manepalli ,  David Unruh ,  Frank Truong ,  Kyu Oh Lee ,  Junnan Zhao ,  Sri Chaitra Jyotsna Chavali

IPC: H01L23/498 ,  H01L23/14 ,  H01L21/48

Abstract: Disclosed herein are integrated circuit (IC) package substrates formed with a dielectric bi-layer, and related devices and methods. In some embodiments, an IC package substrate is fabricated by: forming a raised feature on a conductive layer; forming a dielectric bi-layer on the conductive layer, where the dielectric bi-layer includes a first sub-layer having a first material property and a second sub-layer having a second material property, and where the top surface of the second sub-layer is substantially planar with the top surface of the raised feature; and removing the first sub-layer until the second material property is detected to reveal the conductive feature. In some embodiments, an IC package substrate is fabricated by: forming a dielectric bi-layer on a patterned conductive layer, where the first sub-layer is less susceptible to removal than the second sub-layer; forming an opening in the dielectric bi-layer; etching; and forming a via having vertical sidewalls.

公开(公告)号：US20210111166A1

公开(公告)日：2021-04-15

申请号：US17129269

申请日：2020-12-21

Applicant: Intel Corporation

Inventor： Chong Zhang ,  Cheng Xu ,  Junnan Zhao ,  Ying Wang ,  Meizi Jiao

IPC: H01L25/16 ,  H01L23/538 ,  H01L49/02 ,  H01L23/498 ,  H01L21/56 ,  H01L23/528

Abstract: Microelectronic assemblies, related devices, and methods are disclosed herein. In some embodiments, a microelectronic assembly may include a die having a first surface and an opposing second surface; a capacitor having a surface, wherein the surface of the capacitor is coupled to the first surface of the die; and a conductive pillar coupled to the first surface of the die. In some embodiments, a microelectronic assembly may include a capacitor in a first dielectric layer; a conductive pillar in the first dielectric layer; a first die having a surface in the first dielectric layer; and a second die having a surface in a second dielectric layer, wherein the second dielectric layer is on the first dielectric layer, and wherein the surface of the second die is coupled to the capacitor, to the surface of the first die, and to the conductive pillar.

公开(公告)号：US20200075473A1

公开(公告)日：2020-03-05

申请号：US16607601

申请日：2017-05-23

Applicant: Intel Corporation

Inventor： Srinivas V. Pietambaram ,  Rahul N. Manepalli ,  David Unruh ,  Frank Truong ,  Kyu Oh Lee ,  Junnan Zhao ,  Sri Chaitra Jyotsna Chavali

IPC: H01L23/498 ,  H01L23/14 ,  H01L21/48

Abstract: Disclosed herein are integrated circuit (IC) package substrates formed with a dielectric bi-layer, and related devices and methods. In some embodiments, an IC package substrate is fabricated by: forming a raised feature on a conductive layer; forming a dielectric bi-layer on the conductive layer, where the dielectric bi-layer includes a first sub-layer having a first material property and a second sub-layer having a second material property, and where the top surface of the second sub-layer is substantially planar with the top surface of the raised feature; and removing the first sub-layer until the second material property is detected to reveal the conductive feature. In some embodiments, an IC package substrate is fabricated by: forming a dielectric bi-layer on a patterned conductive layer, where the first sub-layer is less susceptible to removal than the second sub-layer; forming an opening in the dielectric bi-layer; etching; and forming a via having vertical sidewalls.

公开(公告)号：US11721677B2

公开(公告)日：2023-08-08

申请号：US16234302

申请日：2018-12-27

Applicant: Intel Corporation

Inventor： Chong Zhang ,  Cheng Xu ,  Junnan Zhao ,  Ying Wang ,  Meizi Jiao

IPC: H01L21/00 ,  H01L25/16 ,  H01L23/538 ,  H01L49/02 ,  H01L23/498 ,  H01L21/56 ,  H01L23/528

CPC classification number: H01L25/16 ,  H01L21/568 ,  H01L23/49811 ,  H01L23/528 ,  H01L23/5386 ,  H01L28/40 ,  H01L2224/1623 ,  H01L2224/16265

Abstract: Microelectronic assemblies, related devices, and methods are disclosed herein. In some embodiments, a microelectronic assembly may include a die having a first surface and an opposing second surface; a capacitor having a surface, wherein the surface of the capacitor is coupled to the first surface of the die; and a conductive pillar coupled to the first surface of the die. In some embodiments, a microelectronic assembly may include a capacitor in a first dielectric layer; a conductive pillar in the first dielectric layer; a first die having a surface in the first dielectric layer; and a second die having a surface in a second dielectric layer, wherein the second dielectric layer is on the first dielectric layer, and wherein the surface of the second die is coupled to the capacitor, to the surface of the first die, and to the conductive pillar.

公开(公告)号：US11696407B2

公开(公告)日：2023-07-04

申请号：US17560004

申请日：2021-12-22

Applicant: Intel Corporation

Inventor： Chong Zhang ,  Ying Wang ,  Junnan Zhao ,  Cheng Xu ,  Yikang Deng

IPC: H01L23/495 ,  H05K1/16 ,  H01L23/498 ,  H01L21/48 ,  H05K1/11 ,  H05K3/00 ,  H05K3/42 ,  H01F41/04 ,  H01F27/28 ,  H01F17/00 ,  H05K3/06 ,  H01L23/00

CPC classification number: H05K1/165 ,  H01F17/0013 ,  H01F27/2804 ,  H01F41/041 ,  H01F41/046 ,  H01L21/486 ,  H01L23/49827 ,  H01L23/49838 ,  H05K1/115 ,  H05K3/0026 ,  H05K3/0047 ,  H05K3/422 ,  H01F2017/002 ,  H01L23/49816 ,  H01L24/16 ,  H01L2224/16225 ,  H01L2924/1427 ,  H01L2924/19042 ,  H01L2924/19102 ,  H05K3/06 ,  H05K2201/10378 ,  H05K2201/10734 ,  H05K2203/072 ,  H05K2203/107

Abstract: Embodiments may include inductors with embedded magnetic cores and methods of making such inductors. In an embodiment, an integrated circuit package may include an integrated circuit die with a multi-phase voltage regulator electrically coupled to the integrated circuit die. In such embodiments, the multi-phase voltage regulator may include a substrate core and a plurality of inductors. The inductors may include a conductive through-hole disposed through the substrate core and a plugging layer comprising a dielectric material surrounding the conductive through-hole. In an embodiment, a magnetic sheath is formed around the plugging layer. In an embodiment, the magnetic sheath is separated from the plated through hole by the plugging layer. Additionally, a first layer comprising a dielectric material may be disposed over a first surface of the magnetic sheath, and a second layer comprising a dielectric material may be disposed over a second surface of the magnetic sheath.

公开(公告)号：US20230187205A1

公开(公告)日：2023-06-15

申请号：US18165422

申请日：2023-02-07

Applicant: Intel Corporation

Inventor： Ying Wang ,  Chong Zhang ,  Meizi Jiao ,  Junnan Zhao ,  Cheng Xu ,  Yikang Deng

IPC: H01L21/02 ,  H01L23/522 ,  H01L23/00 ,  H01L21/768 ,  H01L23/498

CPC classification number: H01L21/02422 ,  H01L23/5226 ,  H01L24/09 ,  H01L24/17 ,  H01L21/76816 ,  H01L23/49827 ,  H01L23/49894

Abstract: Embodiments may relate to a semiconductor package that includes a die and a glass core coupled with the die. The glass core may include a cavity with an interconnect structure therein. The interconnect structure may include pads on a first side that are coupled with the die, and pads on a second side opposite the first side. Other embodiments may be described and/or claimed.

公开(公告)号：US11335632B2

公开(公告)日：2022-05-17

申请号：US15857238

申请日：2017-12-28

Applicant: Intel Corporation

Inventor： Prithwish Chatterjee ,  Junnan Zhao ,  Sai Vadlamani ,  Ying Wang ,  Rahul Jain ,  Andrew J. Brown ,  Lauren A. Link ,  Cheng Xu ,  Sheng C. Li

IPC: H01L27/28 ,  H01L23/498 ,  H01L21/48 ,  H01F27/28 ,  H01F41/04 ,  H01L25/16 ,  H01L23/00

Abstract: Methods/structures of forming in-package inductor structures are described. Embodiments include a substrate including a dielectric material, the substrate having a first side and a second side. A conductive trace is located within the dielectric material. A first layer is on a first side of the conductive trace, wherein the first layer comprises an electroplated magnetic material, and wherein a sidewall of the first layer is adjacent the dielectric material. A second layer is on a second side of the conductive trace, wherein the second layer comprises the electroplated magnetic material, and wherein a sidewall of the second layer is adjacent the dielectric material.