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公开(公告)号:US20230317621A1
公开(公告)日:2023-10-05
申请号:US17707708
申请日:2022-03-29
Applicant: Intel Corporation
Inventor: Bernd WAIDHAS , David O'SULLIVAN , Georg SEIDEMANN
IPC: H01L23/538 , H01L23/00 , H01L23/15 , H01L25/065 , H01L23/498 , H01L21/48
CPC classification number: H01L23/5384 , H01L24/08 , H01L23/5383 , H01L23/15 , H01L25/0655 , H01L24/05 , H01L24/80 , H01L23/49811 , H01L21/486 , H01L2224/08225 , H01L2224/05647 , H01L2224/80447 , H01L2224/80895
Abstract: Embodiments herein relate to systems, apparatuses, techniques, or processes directed to semiconductor packages that include a glass interposer that includes electrically conductive through glass vias that extend through the interposer. One or more dies may be hybrid bonded to a first side of the glass interposer. In embodiments, the second side of the glass interposer may include a redistribution layer that is electrically coupled with the one or more dies through the through glass vias. Other embodiments may be described and/or claimed.
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公开(公告)号:US20230102133A1
公开(公告)日:2023-03-30
申请号:US17448734
申请日:2021-09-24
Applicant: Intel Corporation
Inventor: Martin OSTERMAYR , Walther LUTZ , Joachim ASSENMACHER , Georg SEIDEMANN
Abstract: A semiconductor die is disclosed, including circuitry comprising a transistor at a frontside of a semiconductor substrate, and a backside inductor at a backside of the semiconductor substrate. The backside inductor is electrically connected to the transistor of the circuitry.
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公开(公告)号:US20220199562A1
公开(公告)日:2022-06-23
申请号:US17131663
申请日:2020-12-22
Applicant: Intel Corporation
Inventor: Bernd WAIDHAS , Andreas WOLTER , Georg SEIDEMANN , Thomas WAGNER
IPC: H01L23/00 , H01L23/31 , H01L23/538
Abstract: Embodiments disclosed herein include electronic package and methods of forming such packages. In an embodiment, an electronic package comprises a mold layer and a first die embedded in the mold layer. In an embodiment, the first die comprises first pads at a first pitch and second pads at a second pitch. In an embodiment, the electronic package further comprises a second die embedded in the mold layer, where the second die comprises third pads at the first pitch and fourth pads at the second pitch. In an embodiment, a bridge die is embedded in the mold layer, and the bridge die electrically couples the second pads to the fourth pads.
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公开(公告)号:US20220108976A1
公开(公告)日:2022-04-07
申请号:US17553679
申请日:2021-12-16
Applicant: Intel Corporation
Inventor: Georg SEIDEMANN , Klaus REINGRUBER , Christian GEISSLER , Sven ALBERS , Andreas WOLTER , Marc DITTES , Richard PATTEN
IPC: H01L25/065 , H01L23/48 , H01L23/00 , H01L25/00 , H01L23/498 , H01L21/48 , H01L23/31 , H01L23/538
Abstract: Embodiments are generally directed to package stacking using chip to wafer bonding. An embodiment of a device includes a first stacked layer including one or more semiconductor dies, components or both, the first stacked layer further including a first dielectric layer, the first stacked layer being thinned to a first thickness; and a second stacked layer of one or more semiconductor dies, components, or both, the second stacked layer further including a second dielectric layer, the second stacked layer being fabricated on the first stacked layer.
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