公开(公告)号：DE4445346C2

公开(公告)日：2001-08-23

申请号：DE4445346

申请日：1994-12-19

Applicant: KOREA ELECTRONICS TELECOMM ,  KOREA TELECOMM AUTHORITY SEOUL

Inventor： RYUM BYUNG-RYUL ,  CHO DEOK-HO ,  HAN TAE-HYEON ,  LEE SOO-MIN ,  KWON OH-JOON

IPC: H01L21/331 ,  H01L29/737 ,  H01L29/732

Abstract: Disclosed is a fabrication of a hetero-junction bipolar transistor in which a base parasitic capacitance is fully reduced by using a metallic silicide as a base, comprising the steps of injecting an impurity in a silicon substrate to form a conductive buried collector region; growing a collector epitaxial layer on the buried collector region and forming a field oxide layer; selectively injecting an impurity into the collector epitaxial layer to form a collector sinker; sequentially forming a base layer and an first oxide layer thereon; patterning the first oxide layer to define an extrinsic base region; ion-implanting an impurity in the extrinsic base region using a patterned oxide layer as a mask and removing the patterned oxide layer; depositing a metallic silicide film thereon to form a base electrode thin film; forming a capping oxide layer of about 500 ANGSTROM thickness only on the base electrode thin film; forming an isolating oxide layer thereon and sequentially and selectively removing the isolating oxide layer, the capping oxide layer, the base electrode thin film and the base layer using a patterned photomask to form a pattern, the isolating oxide layer being provided to electrically isolate base and emitter; forming a side wall oxide layer at both side edges of the pattern; removing a portion of the isolating oxide layer to define an emitter region; forming a passivation layer thereon and selectively removing the passivation layer to form contact holes; and depositing a polysilicon layer doped with impurity ions in the contact holes to form electrodes.

公开(公告)号：DE4444609C2

公开(公告)日：2001-08-02

申请号：DE4444609

申请日：1994-12-14

Applicant: KOREA ELECTRONICS TELECOMM ,  KOREA TELECOMM AUTHORITY SEOUL

Inventor： RYUM BYUNG-RYUL ,  HAN TAE-HYEON ,  LEE SOO-MIN ,  CHO DEOK-HO ,  KANG JIN-YOUNG

IPC: H01L21/316 ,  H01L21/32 ,  H01L21/76 ,  H01L21/762

Abstract: Disclosed is a device isolating method of a semiconductor device, comprising the steps of sequentially forming a pad oxide film, a polysilicon film and an insulating layer, on a silicon substrate, said insulating layer being composed of a first silicon oxide film, a nitride film and a second silicon oxide film formed sequentially on the polysilicon film; defining active and inactive regions by using a patterned photomask; removing the insulating layer only on the inactive region so as to expose a surface of the polysilicon film; forming a side wall at both edges of the insulating layer on the active region, said side wall being composed of a nitride film; depositing a third silicon oxide film on the surface of the polysilicon film; removing the side wall and etching the substrate to a predetermined depth to form a trench; filling an insulating material into the trench and depositing it up to the second silicon oxide so as to form an insulating film for isolating; simultaneously removing the second silicon oxide film and the silicon oxide film and removing the polysilicon film only the inactive region; performing a thermal oxidation to form a field oxide film on the inactive region; and sequentially removing the isolating layer and the polysilicon film formed on the active region. Because the active region is defined using an insulator-filled shallow trench before performing thermal oxidation, no oxygen is penetrated into the active region during the thermal oxidation, whereby a field oxide film can be formed without occurrence of a Bird's beak.

公开(公告)号：GB2295487B

公开(公告)日：1997-12-03

申请号：GB9425223

申请日：1994-12-14

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： RYUM BYUNG-RYUL ,  HAN TAE-HYEON ,  LEE SOO-MIN ,  CHO DEOK-HO ,  KANG JIN-YOUNG

IPC: H01L21/316 ,  H01L21/32 ,  H01L21/76 ,  H01L21/762

Abstract: Disclosed is a device isolating method of a semiconductor device, comprising the steps of sequentially forming a pad oxide film, a polysilicon film and an insulating layer, on a silicon substrate, said insulating layer being composed of a first silicon oxide film, a nitride film and a second silicon oxide film formed sequentially on the polysilicon film; defining active and inactive regions by using a patterned photomask; removing the insulating layer only on the inactive region so as to expose a surface of the polysilicon film; forming a side wall at both edges of the insulating layer on the active region, said side wall being composed of a nitride film; depositing a third silicon oxide film on the surface of the polysilicon film; removing the side wall and etching the substrate to a predetermined depth to form a trench; filling an insulating material into the trench and depositing it up to the second silicon oxide so as to form an insulating film for isolating; simultaneously removing the second silicon oxide film and the silicon oxide film and removing the polysilicon film only the inactive region; performing a thermal oxidation to form a field oxide film on the inactive region; and sequentially removing the isolating layer and the polysilicon film formed on the active region. Because the active region is defined using an insulator-filled shallow trench before performing thermal oxidation, no oxygen is penetrated into the active region during the thermal oxidation, whereby a field oxide film can be formed without occurrence of a Bird's beak.

公开(公告)号：DE4445345C2

公开(公告)日：2001-08-23

申请号：DE4445345

申请日：1994-12-19

Applicant: KOREA ELECTRONICS TELECOMM ,  KOREA TELECOMM AUTHORITY SEOUL

Inventor： RYUM BYUNG-RYUL ,  HAN TAE-HYEON ,  CHO DEOK-HO ,  LEE SOO-MIN ,  LEE SEONG-HEARN ,  KANG JIN-YOUNG

IPC: H01L21/331 ,  H01L21/762 ,  H01L29/732 ,  H01L29/737

Abstract: Disclosed is a fabrication of a bipolar transistor using an enhanced trench isolation so as to improve integration and performance thereof, comprising the steps of sequentially etching back portions corresponding to a trench using a trench forming mask to a predetermined depth of the buried collector to form the trench; filling an isolation insulating layer into the trench; polishing the isolation insulating layer up to a surface of the silicon oxide layer; sequentially forming a second insulating layer on the isolating insulating layer and the silicon oxide layer; removing the first polysilicon layer and the first insulating layer formed on an inactive region other than an active region defined by the trench; thermal-oxidizing the collector layer formed on the inactive region to form a thermal oxide layer; removing the second insulating layer and sequentially forming a third polysilicon, a third insulating layer and a second nitride layer; etching back layers formed on a portion of the first insulating layer to form an opening in the active region; forming a first side wall on both edges of the opening and removing the first insulating layer; forming an intrinsic base at a region where the first insulating layer is removed to electrically connect the intrinsic base with an extrinsic base in self-alignment; forming a second side wall on both sides of the first side wall; and forming an emitter layer on the intrinsic base.