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公开(公告)号:AU2002360756A1
公开(公告)日:2003-07-24
申请号:AU2002360756
申请日:2002-12-26
Applicant: LAM RES CORP
Inventor: GOTKIS YEHIEL , KISTLER RODNEY , ROMM LEONID , LIN TE HUA
IPC: H01L21/3205 , H01L21/304 , H01L21/321 , H01L21/768 , H01L21/4763
Abstract: Methods for fabricating semiconductor structures having LowK dielectric properties are provided. In one example, a copper dual damascene structure is fabricated in a LowK dielectric insulator including forming a capping film over the insulator before features are defined therein. After the copper is formed in the features, the copper overburden is removed using ultra-gentle CMP, and then the barrier is removed using a dry etch process. Following barrier removal, a second etch is performed to thin the capping film. The thinning is configured to reduce the thickness of the capping film without removal, and thereby reducing the K-value of the LowK dielectric structure.