METHODS FOR FABRICATING INTERCONNECT STRUCTURES HAVING LOW K DIELECTRIC PROPERTIES

    公开(公告)号:AU2002360756A1

    公开(公告)日:2003-07-24

    申请号:AU2002360756

    申请日:2002-12-26

    Applicant: LAM RES CORP

    Abstract: Methods for fabricating semiconductor structures having LowK dielectric properties are provided. In one example, a copper dual damascene structure is fabricated in a LowK dielectric insulator including forming a capping film over the insulator before features are defined therein. After the copper is formed in the features, the copper overburden is removed using ultra-gentle CMP, and then the barrier is removed using a dry etch process. Following barrier removal, a second etch is performed to thin the capping film. The thinning is configured to reduce the thickness of the capping film without removal, and thereby reducing the K-value of the LowK dielectric structure.

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