公开(公告)号：AU2002360756A1

公开(公告)日：2003-07-24

申请号：AU2002360756

申请日：2002-12-26

Applicant: LAM RES CORP

Inventor： GOTKIS YEHIEL ,  KISTLER RODNEY ,  ROMM LEONID ,  LIN TE HUA

IPC: H01L21/3205 ,  H01L21/304 ,  H01L21/321 ,  H01L21/768 ,  H01L21/4763

Abstract: Methods for fabricating semiconductor structures having LowK dielectric properties are provided. In one example, a copper dual damascene structure is fabricated in a LowK dielectric insulator including forming a capping film over the insulator before features are defined therein. After the copper is formed in the features, the copper overburden is removed using ultra-gentle CMP, and then the barrier is removed using a dry etch process. Following barrier removal, a second etch is performed to thin the capping film. The thinning is configured to reduce the thickness of the capping film without removal, and thereby reducing the K-value of the LowK dielectric structure.