-
公开(公告)号：JPH1012873A
公开(公告)日：1998-01-16
申请号：JP16710996
申请日：1996-06-27
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： KAMAKURA MASAARI , TOMII KAZUYUKI , SUGIURA YOSHIYUKI , NAGAHAMA HIDEO , HAGIWARA YOSUKE
IPC: H01L29/78
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device in which the drop of breakdown strength due to concentration of electric field can be suppressed and a high breakdown strength IC be realized even when an electrode is led from a drain region over an element isolation region to the outside. SOLUTION: A lateral MOSFET is provided with a p type semiconductor substrate 1, an n type semiconductor epitaxial layer 2 formed on the main surface of the substrate 1, an n type drain areas 5 and 3 formed within the layer 2, a p type region 4 for channel formation surrounding the region 3, and a p type element isolation region 11 for electrically insulating and isolating the respective regions from elements. Then the region 4 is formed circular in a manner to surround the region 5.
-
公开(公告)号：JP2002233998A
公开(公告)日：2002-08-20
申请号：JP2001029329
申请日：2001-02-06
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： YOSHIDA KAZUJI , TOMONARI SHIGEAKI , KAWADA HIROSHI , YOSHIDA HITOSHI , SAITO KIMIAKI , KAMAKURA MASAARI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor micro-actuator of sure operation. SOLUTION: This semiconductor micro-actuator is provided with a semiconductor substrate 3, a flexible part 2 connected to the semiconductor substrate 3 and displacing in a fixed direction according to temperature change, and a movable part 1 connected to the flexible part 2 and displacing according to displacement of the flexible part 2. A surface of the flexible part 2 in a direction roughly perpendicular to a direction of displacement of the flexible part has designated inclination angles T to a base surface of the semiconductor substrate 3 in an initial condition.
-
公开(公告)号：JP2001156350A
公开(公告)日：2001-06-08
申请号：JP33506299
申请日：1999-11-25
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： FUJII KEIKO , KATAYAMA HIRONORI , SAITO KIMIAKI , TOYODA KENJI , TOMONARI SHIGEAKI , KAWADA HIROSHI , YOSHIDA HITOSHI , KAMAKURA MASAARI , YOSHIDA KAZUJI
Abstract: PROBLEM TO BE SOLVED: To enlarge the displacement of a movable part (movable element) with a simple structure. SOLUTION: A semiconductor micro actuator 1A is provided with a movable part 8 comprising four flexible regions 2 which displace according to temperature change and thin films 4A formed on the upper surfaces of the flexible regions 2, and frame-like semiconductor substrate 3 supporting the flexible regions 2 sides of the movable part 8. Here, a heat insulating region 7 is provided between the flexible region 2 and the semiconductor substrate 3, while the thin film 4A on the heat insulating region 7 side is substantially thick. In short, the thin film 4A is provided at a part of the upper surface of flexible region 2 positioned on the heat insulating region 7 side.
-
公开(公告)号：JP2001153252A
公开(公告)日：2001-06-08
申请号：JP33506599
申请日：1999-11-25
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： KAMAKURA MASAARI , TOMONARI SHIGEAKI , KAWADA HIROSHI , YOSHIDA HITOSHI , YOSHIDA KAZUJI , KATAYAMA HIRONORI , SAITO KIMIAKI , FUJII KEIKO , TOYODA KENJI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor micro-valve having good seal performance while thermal efficiency is improved by preventing an outflow of heat to a first substrate from a second substrate provided with a flexible part. SOLUTION: A flexible part 3, when it is heated, is deflected to displace a valve element 4 formed to be linked to the flexible part 3, a distance between an opposed surface 4a of the valve element 4 and a valve seat 7a is changed, so as to control a flow amount of fluid flowing in a through hole 7. At least one of the opposed surface 4a of the valve element and the valve seat 7a is formed with a heat insulation layer 5.
-
公开(公告)号：JP2001141106A
公开(公告)日：2001-05-25
申请号：JP32434799
申请日：1999-11-15
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： KAWADA HIROSHI , TOMONARI SHIGEAKI , YOSHIDA HITOSHI , KAMAKURA MASAARI , YOSHIDA KAZUJI , KATAYAMA HIRONORI , SAITO KIMIAKI , FUJII KEIKO , TOYODA KENJI
IPC: F16K31/70
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor micro valve capable of increasing a thermal resistance with a stiffness secured and obtaining a displacement and force larger than even, and manufacturing method therefor. SOLUTION: A through hole 10 wherefrom a fluid flows into is provided at the central part of a substrate 1. A valve element 11 opposing the through hole 10 is provided at the central part of a substrate 2, forming a narrow gap 13 between a seat part 12 in the upper surface of the through hole 10 and the valve element 11. A flexible part 3 which can be deformed by heat like a bimetal is disposed in such a manner that it surrounds the valve element 11. A frame part 5 of the substrate 2 is disposed about the flexible part 3 in such a manner that it is joined with the substrate 1. A heat insulating area 4 is provided in front and back of the flexible part 3, that is in both the central valve element 11 side and the frame part 5 side of the substrate 2. The heat insulating area 4 in the central valve element 11 side has a lower stiffness and the heat insulating area 4 in the surrounding frame part 5 side has a higher stiffness.
-
Patent Agency Ranking
公开(公告)号：JP2001138296A
公开(公告)日：2001-05-22
申请号：JP32434899
申请日：1999-11-15
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： YOSHIDA HITOSHI , TOMONARI SHIGEAKI , KAWADA HIROSHI , KAMAKURA MASAARI , YOSHIDA KAZUJI , KATAYAMA HIRONORI , SAITO KIMIAKI , FUJII KEIKO , TOYODA KENJI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor microvalve having good drivability. SOLUTION: The semiconductor microvalve includes a valve element 4 displaced when the flexible part 3 of a second board 2 deflects and a valve seat 7a positioned at the periphery of an oversurface opening 7b in a through hole 7 formed in the first board 1 and the distance between the seat 7a and the undersurface 4a of the valve element 4 is changed to adjust the rate of flow of the fluid flowing in the through hole 7. The first 1 and second boards 2 are joined together with a buffer layer 10 interposed.
-
公开(公告)号：JP2000317897A
公开(公告)日：2000-11-21
申请号：JP30472999
申请日：1999-10-26
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： YOSHIDA HITOSHI , TOMONARI SHIGEAKI , KAWADA HIROSHI , KAMAKURA MASAARI , YOSHIDA KAZUJI , KATAYAMA HIRONORI , SAITO KIMIAKI , FUJII KEIKO , TOYODA KENJI , NOBUTOKI KAZUHIRO
Abstract: PROBLEM TO BE SOLVED: To provide a heat insulating structure having a high heat insulating efficiency and manufactured through simple processes, a semiconductor microactuator using the same, a semiconductor microvalve, and a semiconductor microrelay. SOLUTION: Four outwardly extending flexible areas 2 joined to a central moving element 5 are joined to a semiconductor substrate 3 via heat insulating areas 7 made from a heat insulating material such as polyimide or fluororesin, the semiconductor substrate 3 serving as a frame. The heat insulating areas 7 are provided within the thickness of the flexible area 2 between the semiconductor substrate 3 and the flexible area 2 in such a way as to be about as thick as the flexible area 2. When the flexible areas 2 are heated by heating means 6 consisting of impurity diffusion resistances or the like provided on the surfaces of the flexible areas 2, the flexible areas 2 flex because of a difference in thermal expansion from thin films 4 of aluminum or nickel provided on the flexible areas 2, and the movable element 5 is displaced.
-
公开(公告)号：JP2000266230A
公开(公告)日：2000-09-26
申请号：JP6919999
申请日：1999-03-15
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： KAMAKURA MASAARI , TOMONARI SHIGEAKI , YOSHIDA HITOSHI , KAWADA HIROSHI , FUJII KEIKO
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor microvalve having a large displacement amount of a flexible portion and capable of providing a good sealing characteristic. SOLUTION: A peripheral portion 11 of a first silicon substrate 10 formed with a valve port 10a and a peripheral portion 21 of a second silicon substrate 20 having a valve element 23 for opening/closing the valve port 10a are joined. a valve seat 13 to/from which the valve element 23 contacts/separates is provided on the first silicon substrate 10. The second silicon substrate 20 is provided with the valve element 23 at a center portion of a flexible portion 22 having a flexibility supported to a support portion comprising the peripheral portion 21. A distribution hole through which a fluid passes is formed at a main position of the flexible portion 22. An impurity diffusion layer is formed on the flexible portion 22. A deformed portion 22d previously deformed is formed between the support portion 21 and the valve element in the flexible portion 22 such that an end of the valve element 23 approaches to the one surface of the first silicon substrate 10 as compared with an end of the support portion 21.
-
公开(公告)号：JP2000266223A
公开(公告)日：2000-09-26
申请号：JP6920099
申请日：1999-03-15
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： KAMAKURA MASAARI , TOMONARI SHIGEAKI , YOSHIDA HITOSHI , KAWADA HIROSHI , FUJII KEIKO
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor mirovalve having a large displacement amount of a flexible portion and capable of providing a good sealing characteristic. SOLUTION: This semiconductor microvalve is provided with a second silicon substrate 20 having a valve element 23 for opening/closing a valve port 10a penetratingly provided on the first silicon substrate 10. The second silicon substrate 20 is provided with a diaphragm-like flexible portion 22 having a flexibility supported to a supporting portion 21 joined to a peripheral portion 11 of the first silicon substrate 10 and a valve element 23 leaving/contacting broom/to a valve seat 13 corresponding to the flexibility of the flexible portion 22. A bimetal element film 24 comprising a metal thin film is laminated on the flexible portion 22. The bimetal element film 24 constitutes a bimetal with the flexible portion 22. The bimetal constitutes a driving portion for deforming the flexible portion utilizing a thermal expansion. In the flexible portion 22, a plurality of small holes 25 are formed in a net shape at a position excepting for a position corresponding to the valve element 23 and the bimetal element film 24.
-
公开(公告)号：JP2000220766A
公开(公告)日：2000-08-08
申请号：JP14711999
申请日：1999-05-26
Applicant: MATSUSHITA ELECTRIC WORKS LTD
Inventor： KAMAKURA MASAARI , TOMONARI SHIGEAKI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor microvalve and manufacture thereof capable of a broad range of flow control and wherein a small and normally open type valve is easily formed. SOLUTION: A semiconductor substrate 1 having a through hole 1a and a projection part 1c being a valve seat provided near an opening of the through hole 1a, and a flat form flexible part 2 oppositely placed with a predetermined gap width in between a surface having the projection 1c of the semiconductor substrate 1 formed are included, and a flow control of fluid is performed by displacing the flexible part 2 for adjusting the gap width.
-
-
-
-
-
-
-
-
-
Search Results
58
records
(took 0.033 seconds)
