公开(公告)号：JP2003120851A

公开(公告)日：2003-04-23

申请号：JP2001316220

申请日：2001-10-15

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： TOMONARI SHIGEAKI ,  KAWADA HIROSHI ,  YOSHIDA HITOSHI ,  KAMAKURA MASAARI ,  YOSHIDA KAZUJI

IPC: B81B3/00 ,  F16K31/70

Abstract: PROBLEM TO BE SOLVED: To provide a sealed semiconductor microvalve capable of preventing controlled fluid from directly coming into contact with a movable element, and driving the movable element with low power consumption. SOLUTION: This semiconductor microvalve is composed of a valve seat 1 having an orifice 11 as a fluid in-flow port, an intermediate valve element 2 mounted on the valve seat 1 and having a valve cover 21 for opening and closing the orifice 11 to control a flow rate of the fluid, and an actuator 3 mounted on the intermediate valve element 2 and having a movable element 31 connected to a bimetal 31 for pressing the intermediate valve element 2. The intermediate valve element 2 has a diaphragm 22 supporting the valve cover 21, and partitioning spaces formed by the valve seat 1 and the actuator 3, and fluid discharge ports 12a, 12b are formed on a face excluding the diaphragm 22 face of the space by the intermediate valve element 2 and the valve seat 1.

公开(公告)号：JP2002103297A

公开(公告)日：2002-04-09

申请号：JP2000292942

申请日：2000-09-26

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： YOSHIDA HITOSHI ,  KAMAKURA MASAARI ,  YOSHIDA KAZUJI

IPC: B81B3/00 ,  F16K31/02 ,  F16K31/70 ,  H01H37/32 ,  H01H37/52

Abstract: PROBLEM TO BE SOLVED: To provide a micro-actuator capable of simplifying a manufacturing process and improving yield by ensuring a gap in a section of a movable element without forming a digged-in part. SOLUTION: In this micro-actuator having a board 1 having a fluid passage or electric wiring and the movable element 6 supported in a flexible part 5 to displace so as to open, close, and control the fluid passage or electric wiring due to the displacement of the movable element 6, the flexible part 5 warps to open it in a normal condition (to ensure the gap G).

公开(公告)号：JP2001153251A

公开(公告)日：2001-06-08

申请号：JP33506499

申请日：1999-11-25

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： YOSHIDA KAZUJI ,  TOMONARI SHIGEAKI ,  KAWADA HIROSHI ,  YOSHIDA HITOSHI ,  KAMAKURA MASAARI ,  KATAYAMA HIRONORI ,  SAITO KIMIAKI ,  FUJII KEIKO ,  TOYODA KENJI

IPC: F16K7/12 ,  F16K31/02

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor micro-valve prevented from being damaged. SOLUTION: A flexible part 3, when it is heated, is deflected to displace a valve element 4 formed to be linked to the flexible part 3, a distance between the valve element 4 and a valve seat 7a is changed, and a flow amount of fluid flowing in a through hole 7 is controlled. The flexible part 3 is formed in a bottom surface part of a recessed part 5 provided in a second base board 2, a boundary part 5c between a bottom surface 5a and a side surface 5b of this recessed part 5 is formed in curved surface shape.

公开(公告)号：JP2001150394A

公开(公告)日：2001-06-05

申请号：JP33506399

申请日：1999-11-25

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： FUJII KEIKO ,  KATAYAMA HIRONORI ,  SAITO KIMIAKI ,  TOYODA KENJI ,  TOMONARI SHIGEAKI ,  KAWADA HIROSHI ,  YOSHIDA HITOSHI ,  KAMAKURA MASAARI ,  YOSHIDA KAZUJI

IPC: B81B3/00 ,  F03G7/06

Abstract: PROBLEM TO BE SOLVED: To widely displace a movable part (movable element). SOLUTION: Heat insulating areas 7 are respectively formed between each flexible area 2 and a semiconductor base 3 in this semiconductor micro-actuator 1A comprising a movable part 8 having four flexible areas 2 displaceable in accordance with the change of temperature, thin films 4 formed on upper surfaces of the flexible areas 2, and a movable element 5A vertically moved in accordance with the displacement of each flexible area 2, and the semiconductor base 3 supporting each flexible area 2 side of the movable part 8, and a heat insulating part 51A is formed at a movable element 5A side. That is, the movable element 5A is totally formed as the heat insulating part 51A.

公开(公告)号：JP2001138295A

公开(公告)日：2001-05-22

申请号：JP32434699

申请日：1999-11-15

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： FUJII KEIKO ,  KATAYAMA HIRONORI ,  SAITO KIMIAKI ,  TOYODA KENJI ,  TOMONARI SHIGEAKI ,  KAWADA HIROSHI ,  YOSHIDA HITOSHI ,  KAMAKURA MASAARI ,  YOSHIDA KAZUJI

IPC: B81B3/00 ,  F03G7/06 ,  G12B1/02

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor microactuator capable of driving a movable element with a low power consumption. SOLUTION: The semiconductor microactuator is furnished with a supporting part 21 consisting of a peripheral part of silicon board 20 and a movable element 2 having flexibility supported by the supporting part 21 on one surface of the silicon board 20. The movable element 2 is furnished with a plurality of beams 22, and on one surface of each beam 22, a bimetal element film 24 as element to constitute a bimetal together with the beam 22 is laminated. The surface of the bimetal element film 24 is covered with a thermo-insulating film consisting of polyimide.

公开(公告)号：JP2000266229A

公开(公告)日：2000-09-26

申请号：JP6920299

申请日：1999-03-15

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： KAMAKURA MASAARI ,  TOMONARI SHIGEAKI ,  YOSHIDA HITOSHI ,  KAWADA HIROSHI ,  FUJII KEIKO

IPC: F16K31/70

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor microvalve capable of increasing a displacement quantity of a flexible portion by a low power consumption. SOLUTION: In a diaphragm-like flexible portion 22, a peripheral portion 22c is bonded to a silicon substrate 10 through a spacer 30. A valve element 23 for opening/closing a valve port 10a by leaving/contacting from with a valve seat 13 provided on the silicon substrate 10 is formed at a center portion of the flexible portion 22. The flexible portion 22 is formed of silicon and a driving portion for deforming the flexible portion 22 utilizing a heat expansion and then a curve quantity of the flexible portion can be controlled. At a surface of the flexible portion 22 facing to the silicon substrate 10, a plurality of concentric grooves 22d surrounding the valve element 23 are formed between a center portion provided with the valve element 23 and a peripheral portion 22c.

公开(公告)号：JPH1197356A

公开(公告)日：1999-04-09

申请号：JP25740297

申请日：1997-09-24

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： KAMAKURA MASAARI ,  OKA NAOMASA ,  OGIWARA ATSUSHI ,  OKUTO TAKASHI

IPC: H01L21/205

Abstract: PROBLEM TO BE SOLVED: To suppress forming of an inverted layer due to auto doping, by mounting on a susceptor a semiconductor substrate having a high-concn. second conductivity type buried victim layer, and semiconductor substrate contg. a first conductivity type impurity at a high concn. through the epitaxial growth. SOLUTION: A manufacturing method comprises steps of depositing and thermally diffusing a p-type impurity, using a field oxide film having openings as a mask to form a p-through buried victim layer, etching to perfectly remove the field oxide film, and forming an epitaxial layer on the p-through buried victim layer of an Si substrate 1, wherein this substrate 1 having the victim layer and another Si substrate 2 contg. P or other n-type impurity at a high concn. are mounted on a susceptor S of an induction heating epitaxial growth apparatus, and the susceptor S is rotated with center at a rotary shaft 3 during forming of the epitaxial on the substrate 1.

公开(公告)号：JPH10242454A

公开(公告)日：1998-09-11

申请号：JP4359497

申请日：1997-02-27

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： KAMAKURA MASAARI ,  SUGIURA YOSHIYUKI ,  HAGIWARA YOSUKE

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device having no lowered breakdown voltage between a drain and a source, even in the case of wiring a high-potential drain electrode over an element separation region. SOLUTION: An n+ type drain region 5 is formed approximately in the center inside an element formation region 4, a p-type channel region 6 is formed inside the element formation region 4 exclusive of a lower part of a drain electrode 12 and its neighborhood in contact with a p+ type element separation region 3 so as to enclose the n+ type drain region, and n+ type source region 7 is formed inside the element formation region for being involved inside the p-type channel region 6 and the p+ type element separation region 3. A p-type impurity region 8 is formed between the p-type channel region 6 and the n+ type drain region 5, and inside the element formation region 4 in the lower part of the drain electrode 12 and in its neighborhood, and a conductive layer 14 is formed inside an insulating layer 11 on the p-type impurity region 8 for performing capacitive coupling. The area of an overlapping part of the conductive layer 14 consisting of capacitive coupling of the lower part of the drain electrode is made smaller as it goes toward the outer circumference of the element formation region.

公开(公告)号：JPH10163472A

公开(公告)日：1998-06-19

申请号：JP31585196

申请日：1996-11-27

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： HAGIWARA YOSUKE ,  TOMII KAZUYUKI ,  SUGIURA YOSHIYUKI ,  NAGAHAMA HIDEO ,  KAMAKURA MASAARI

IPC: H01L29/06 ,  H01L29/78

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which can get high breakdown strength stably and its manufacturing method. SOLUTION: An n+-type drain region 5 is made at roughly center of a device formation area 4, and a P+-type body 6 and a p-type channel region 7 are so made as to surround the n+-type drain region 5. Then, an n+-type source region 8 is made such that it is involved in the p+-type body 6 and the p-type channel region 7, and a p--type impurity region 9 is made in the device formation region 4 between the p-type channel region 7 and the n+-type drain region 5. Moreover, a p++-type impurity region 10 is made such that it is involved in the p--type impurity region 9, and a p+-type impurity region 15 is made such that is involves the p++-type impurity region 10 and that it is involved in the p--type impurity region 9.

公开(公告)号：JPH09293883A

公开(公告)日：1997-11-11

申请号：JP10584196

申请日：1996-04-25

Applicant: MATSUSHITA ELECTRIC WORKS LTD

Inventor： SUGIURA YOSHIYUKI ,  TOMII KAZUYUKI ,  NAGAHAMA HIDEO ,  HAGIWARA YOSUKE ,  KAMAKURA MASAARI

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/329 ,  H01L21/768 ,  H01L29/861

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which can easily form an electrode having capacitive coupling and can realize a high breakdown voltage, and also to provide a method for fabricating the semiconductor device. SOLUTION: An n-type single crystal silicon substrate 1 is subjected on its one major surface to ion implanting and thermal diffusing processes to form a p-type impurity diffusion region 1a and an n-type high-concentration impurity diffusion region 1b. After that a silicon oxide film 2 is formed and then etched with use of a photoresist layer 3 as a mask to form projections 2a thereon, and then the photoresist 3 is removed. Next, a polysilicon layer 4 is formed, the polysilicon layer 4 on top faces of the projections 2a is etched and removed with use of a photoresist layer 5 as a mask. Subsequently, a silicon oxide film 6 is formed, openings 7a to 7c are made therein with the photoresist as a mask and then the photoresist is removed. Finally, a metallic wiring material 8 is filled into the openings 7a to 7c to form a metallic wiring pattern.