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    OPTOELEKTRONISCHES HALBLEITERBAUTEIL UND VERFAHREN ZUR HERSTELLUNG EINES OPTOELEKTRONISCHEN HALBLEITERBAUTEILS
    22.
    发明申请
    OPTOELEKTRONISCHES HALBLEITERBAUTEIL UND VERFAHREN ZUR HERSTELLUNG EINES OPTOELEKTRONISCHEN HALBLEITERBAUTEILS 审中-公开
    光电半导体器件及其制造方法的光电子半导体器件

    公开(公告)号：WO2009121339A1

    公开(公告)日：2009-10-08

    申请号：PCT/DE2009/000417

    申请日：2009-03-26

    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH ,  WEGLEITER, Walter ,  WIRTH, Ralph ,  BARCHMANN, Bernd

    Inventor： WEGLEITER, Walter ,  WIRTH, Ralph ,  BARCHMANN, Bernd

    IPC: H01L33/00

    CPC classification number: H01L33/44 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/1815 ,  H01L2924/00014

    Abstract: In mindestens einer Ausführungsform des optoelektronischen Halbleiterbauteils (1) umfasst dieses einen Anschlussträger (2) mit einer Anschlussseite (20) und mindestens einen optoelektronischen Halbleiterchip (3), der auf der Anschlussseite angebracht und mit dem Anschlussträger elektrisch verbunden ist. Weiterhin umfasst das Halbleiterbauteil eine haftvermittelnde Zwischenfolie (5) die auf der Anschlussseite angebracht ist und diese mindestens teilweise bedeckt. Zudem weist das Halbleiterbauteil mindestens einen strahlungsdurchlässigen Vergusskörper (4) auf, der den Halbeiterchip zumindest teilweise umgibt, wobei der Vergusskörper mittels der Zwischenfolie mit dem Anschlussträger mechanisch verbunden ist. Ein derart gestaltetes optoelektronisches Halbleiterbauteil ist alterungsbeständig und weist gute optische Eigenschaften auf.

    Abstract translation: 在光电子半导体器件的至少一个实施例中（1）包括所述（2），其具有连接侧（20）和至少一个光电子半导体芯片（3）安装在所述连接侧并电连接到连接支承一个终端支持。 此外，该半导体装置包括安装在终端侧，该至少部分地覆盖的粘合剂中间膜（5）。 此外，该半导体器件包括至少一个辐射透灌封（4），其至少包围所述半导体芯片的一部分，其中，由所述中间膜来连接载体的装置中的铸造体机械地连接。 这样设计的光电子半导体器件是耐老化，并具有良好的光学特性。

    BELEUCHTUNGSVORRICHTUNG
    24.
    发明公开
    BELEUCHTUNGSVORRICHTUNG 有权

    公开(公告)号：EP2529399A1

    公开(公告)日：2012-12-05

    申请号：EP11700426.7

    申请日：2011-01-17

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： SABATHIL, Matthias ,  VON MALM, Norwin ,  HOEPPEL, Lutz ,  ILLEK, Stefan ,  BARCHMANN, Bernd ,  RODE, Patrick

    IPC: H01L25/075 ,  F21K99/00

    CPC classification number: H01L25/0753 ,  H01L33/22 ,  H01L33/507 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A lighting device with front carrier, rear carrier and plurality of light-emitting diode chips, which when in operation emits light and releases waste heat, wherein rear carrier is covered at least in selected locations by front carrier, light-emitting diode chips are arranged between rear carrier and front carrier to form array, light-emitting diodes are contacted electrically by rear and/or front carrier and immobilized mechanically by rear carrier and front carrier, front carrier is coupled thermally conductively to light-emitting diode chips and includes light outcoupling face remote from light-emitting diode chips, which light outcoupling face releases some of waste heat released by light-emitting diode chips into surrounding environment, each light-emitting diode chip is actuated with electrical nominal power of 100 mW or less when lighting device is in operation and has light yield of 100 lm/W or more.

    Abstract translation: 具有前载体，后载体和多个发光二极管芯片的照明装置，其在运行时发光并释放废热，其中后载体至少在前载体的选定位置被覆盖，发光二极管芯片被布置 在后部载体和前部载体之间形成阵列，发光二极管通过后部和/或前部载体电接触并且由后部载体和前部载体机械固定，前部载体与导热地耦合到发光二极管芯片并且包括光输出耦合 远离发光二极管芯片，该光耦合面将由发光二极管芯片释放的一些废热释放到周围环境中，当照明设备是光源时，每个发光二极管芯片以100mW或更小的电标称功率被致动 并且具有100lm / W或更高的光产量。

    OPTOELEKTRONISCHES HALBLEITERBAUTEIL
    27.
    发明公开
    OPTOELEKTRONISCHES HALBLEITERBAUTEIL 有权
    光电半导体器件

    公开(公告)号：EP2510558A1

    公开(公告)日：2012-10-17

    申请号：EP10788035.3

    申请日：2010-11-17

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： KRÄUTER, Gertrud ,  BARCHMANN, Bernd ,  BERGENEK, Krister ,  RAMCHEN, Johann ,  ZITZLSPERGER, Michael

    IPC: H01L33/56

    CPC classification number: H01L33/56 ,  H01L31/035281 ,  H01L33/505

    Abstract: An optoelectronic semiconductor component includes a radiation emitting semiconductor chip having a radiation coupling out area. Electromagnetic radiation generated in the semiconductor chip leaves the semiconductor chip via the radiation coupling out area. A converter element is disposed downstream of the semiconductor chip at its radiation coupling out area. The converter element is configured to convert electromagnetic radiation emitted by the semiconductor chip. The converter element has a first surface facing away from the radiation coupling out area. A reflective encapsulation encapsulates the semiconductor chip and portions of the converter element at side areas in a form-fitting manner. The first surface of the converter element is free of the reflective encapsulation.

    OPTOELEKTRONISCHES MODUL
    28.
    发明公开
    OPTOELEKTRONISCHES MODUL 审中-公开
    光电模块

    公开(公告)号：EP2478557A1

    公开(公告)日：2012-07-25

    申请号：EP10752334.2

    申请日：2010-09-06

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： WEGLEITER, Walter ,  KALTENBACHER, Axel ,  BARCHMANN, Bernd ,  WEIDNER, Karl ,  REBHAN, Matthias

    IPC: H01L25/075 ,  H01L33/44 ,  H01L33/50 ,  H01L33/62

    CPC classification number: H01L33/44 ,  H01L25/0753 ,  H01L33/62 ,  H01L2224/24

    Abstract: The invention relates to an optoelectronic module (100) having at least one carrier (1) with at least one contact location (1A); a semiconductor chip (2) emitting radiation, wherein the semiconductor chip (2) emitting radiation comprises a first contact surface (2A) and a second contact surface (2B); an electrically insulating layer (4) comprising a first (4A) and a second recess (4B); at least one electrically conductive conductor structure (8), wherein the first contact surface (2A) is disposed on the side of the semiconductor chip (2) emitting radiation facing away from the carrier (1), the electrically insulating layer (4) is applied at least in places to the carrier (1) and the semiconductor chip (2) comprises the first recess (4A) in the area of the first contact surface (2A) and the second recess (4B) in the area of the contact location (1A), the electrically conductive conductor structure (8) is disposed on the electrically insulating layer (4) and the first contact surface (2A) electrically contacts the contact location (1A) of the carrier (1), and the electrically insulating layer (4) is formed predominately of a ceramic material.

    OPTOELEKTRONISCHES BAUELEMENT UND VERFAHREN ZU DESSEN HERSTELLUNG
    29.
    发明公开
    OPTOELEKTRONISCHES BAUELEMENT UND VERFAHREN ZU DESSEN HERSTELLUNG 审中-公开

    公开(公告)号：EP2617070A1

    公开(公告)日：2013-07-24

    申请号：EP11755034.3

    申请日：2011-08-22

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： WEIDNER, Karl ,  RAMCHEN, Johann ,  KALTENBACHER, Axel ,  WEGLEITER, Walter ,  BARCHMANN, Bernd

    IPC: H01L33/38 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62 ,  H01L23/055

    CPC classification number: H01L33/60 ,  H01L23/055 ,  H01L24/18 ,  H01L24/24 ,  H01L24/82 ,  H01L33/505 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/24 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244

    Abstract: An optoelectronic component is specified, comprising a carrier (3), which has a first (1) and a second connection region (2), and comprising a radiation-emitting semiconductor chip (4), which has a base surface (5) and a radiation exit surface (6), opposite the base surface, wherein the semiconductor chip (4) is arranged by the base surface (5) on the carrier (3). Furthermore, the optoelectronic component comprises a housing (10) having a lower housing part (8), which adjoins side flanks (14) of the semiconductor chip (4), and an upper housing part (9), which forms a reflector (15) for the radiation (16) emitted by the semiconductor chip (4). An electrical connection layer (7) is led from the radiation exit surface (6) of the semiconductor chip (4) via a part of the interface (19) between the lower (8) and the upper housing part (9) and through the lower housing part (8) to the first connection region (1) on the carrier (3). An advantageous method for producing the optoelectronic component is furthermore specified.

    Abstract translation: 本发明涉及一种光电子器件，包括具有第一连接区域（1）和第二连接区域（2）的载体（3），并且包括发射辐射的半导体芯片（4），其具有基底表面（5）和 与底面相对的辐射出射面（6），其中半导体芯片（4）由底面（5）布置在载体（3）上。 此外，光电子器件包括具有邻接半导体芯片（4）的侧面（14）的下壳体部件（8）和形成反射器（15）的上壳体部件（9）的壳体（10） ）用于由半导体芯片（4）发射的辐射（16）。 电连接层（7）从半导体芯片（4）的辐射出射表面（6）经由下部壳体部分（8）和上部壳体部分（9）之间的界面（19）的一部分并且通过 下壳体部分（8）与载体（3）上的第一连接区域（1）连接。 此外规定了用于制造光电子器件的有利方法。

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