公开(公告)号：JPH11295251A

公开(公告)日：1999-10-29

申请号：JP9555898

申请日：1998-04-08

Applicant: SHIMADZU CORP

Inventor： AKAMARU HISAMITSU ,  YOSHII MITSUYOSHI ,  AOYAMA YOSHIHIRO ,  KUYAMA HIROKI ,  KITA JUNICHI

IPC: G01N27/12

Abstract: PROBLEM TO BE SOLVED: To increase a contact area thereby improving a response speed and a sensitivity of a gas sensor by forming an opening at an insulating substrate other than an electrode at an area of a stress-sensitive film to penetrate to a rear face, and bringing a sample gas in contact with not only an upper face of the stress-sensitive film, but the stress-sensitive film from the side of the substrate. SOLUTION: Openings 11 each constituting a comb-like part with comb teeth opposed via a width of approximately 150 μm are formed at a silicon wafer 9 of a thickness of approximately 200 μm. A gold film is formed via an insulating oxide film and a titanium film on the oxide film to a surface of the wafer 9 at an area formed like a comb and each area connected to the area, thereby forming a comb-shaped electrode and terminals 15 connected to the comb-like electrode. A sensor substrate 17 is constituted of the silicon wafer 9, electrode and terminals 15. When a sample gas is measured with the use of a gas sensor 21, the sample gas is brought in touch with not only a front face of a stress-sensitive film 19, but the stress-sensitive film 19 from the side of a rear face through the openings 11. Since the sample gas is brought in touch with the upper and lower faces of the stress-sensitive film 19, thereby increasing a contact area, a response speed and a sensitivity are improved.

公开(公告)号：JPH10130087A

公开(公告)日：1998-05-19

申请号：JP28269096

申请日：1996-10-24

Applicant: NAKATSUKA MASAHIRO ,  SHIMADZU CORP

Inventor： NAKATSUKA MASAHIRO ,  FUJIOKA KANA ,  KANABE TADASHI ,  YOSHII MITSUYOSHI ,  HATANAKA HIROYUKI ,  KITA JUNICHI

IPC: G02F1/35 ,  C30B7/00 ,  C30B7/10 ,  C30B29/14 ,  C30B29/54 ,  G02F1/355

Abstract: PROBLEM TO BE SOLVED: To provide a high-speed growth method for a water-soluble crystal capable of greatly increasing a crystal growth speed as compared with the crystal growth speed of the conventional water-soluble crystal precipitation method. SOLUTION: A growth soln. of a high saturation state of a supersaturation degree of 10 to 200% is formed by impressing heat energy and acoustic energy on an aq. soln. of a crystalline material, then cooling the soln. A seed crystal is inserted into the growth soln. and the crystal is grown while soln. flow is formed near its crystal growth surface. The heat energy and acoustic energy are impressed on the soln. in the stage before the soln. is supercooled to the supersaturation state, by which the generation of clusters in the soln. is suppressed and the formation of general crystals is suppressed. The crystal material molecules in the growth soln. of the high supersaturation are thus deposited only on the crystal growth surface.

公开(公告)号：JPH09152252A

公开(公告)日：1997-06-10

申请号：JP31390595

申请日：1995-12-01

Applicant: SHIMADZU CORP

Inventor： AOKI YASUSHI ,  KITA JUNICHI ,  NAKANO HIROSHI

IPC: F25D21/02

Abstract: PROBLEM TO BE SOLVED: To achieve high detecting accuracy, cost down and miniaturization. SOLUTION: A detecting pulse current signal I1, consisting of a reference voltage generating pulse P1 and a self heat generating pulse, which are repeated alternately, is supplied to a thermistor 2 by a detecting current supplying means, constituted of a CPU 5, a D/A converter 7 and a voltage/current converter 10. In this case, a deciding means, consisting of the CPU 5 and a memory 6, produces a threshold value T based on a reference voltage generated in the thermistor 2 by the reference voltage generating pulse, and, thereafter, compares a self heat generating voltage, generated in the thermistor 2 by the self heat generating pulse, with the threshold value to decide frosting and dewing.

公开(公告)号：JPH08178754A

公开(公告)日：1996-07-12

申请号：JP32254994

申请日：1994-12-26

Applicant: SHIMADZU CORP

Inventor： KISHIHARA HIROYUKI ,  KITA JUNICHI ,  KOBAYASHI JUNYA

IPC: G01J1/04 ,  G01J5/02 ,  G01J5/34

Abstract: PURPOSE: To obtain a clinical thermometer for measuring the temperature of an object accurately in a short time. CONSTITUTION: A temperature measuring instrument can be built in a case as small as a clinical thermometer by employing a liquid crystal chopper 4 as a modulation means for incident infrared rays at the time of measuring the absolute temperature using a pyroelectric infrared detector 3. When the infrared detector 3 is arranged on the body 1 side, a hollow temperature measuring section 2 having low thermal capacity can be realized. Temperature of ear can also be measured when an opening 1a is provided at the tip of the temperature measuring section.

公开(公告)号：JPH07120392A

公开(公告)日：1995-05-12

申请号：JP27051493

申请日：1993-10-28

Applicant: SHIMADZU CORP

Inventor： KITA JUNICHI ,  TAKUBO KENJI

IPC: G01N21/64 ,  G01N27/447

Abstract: PURPOSE:To exclude the scanning function of an optical system, to eliminate a need for the complicated adjustment of an optical axis and to increase an S/N ratio and a coefficient of light utilization by a method wherein a light source which shines excitation light a fluorescence-labeled DNA fragment and a detector which receives generated fluorescence, are integrated and they and arranged in every electrophoretic lane. CONSTITUTION:A gel electrophoretic plate 1 is formed in such a way that, e.g. a 6-% polyacrylamide gel 1b in a thickness of 0.35mm is sandwiched between Pyrex glass plates 1a, 1b in a thickness of 0.5mm, and a fluorescence-labeled DNA fragment is injected into a recessed part in a well 2. Consequently, the recessed part in the well 2 having a width of 5 to 10mm is extended in the length direction of the electrophoretic plate 1, and it is used as an electrophoretic lane. Both ends of the electrophoretic plate 1 are inserted into buffer-solution tanks 3, 4 to which one pair of electrodes are attached, and they are connected to a high-voltage power supply. One piece each of a sensor head 7 is arranged in every electrophoretic lane at a mount part 6, excitation light from an LED is cast on the gel 1b, fluorescence from the DNA fragment is received by an avalanche photodiode (APD) 71, and a base arrangement is decided by a CPU.

公开(公告)号：JPH03283679A

公开(公告)日：1991-12-13

申请号：JP8509590

申请日：1990-03-30

Applicant: SHIMADZU CORP

Inventor： KITA JUNICHI

IPC: H01L39/22 ,  H01L39/24

Abstract: PURPOSE:To make effective length of a junction very short to obtain a Josephson junction device which has good performance even if a high temperature thin superconducting film is used by forming a sharp protrusion on a substrate surface and forming thin superconducting films on both sides of the protrusion as well as jointing them by a bridge formed across the protrusion. CONSTITUTION:A thin resist line 11 is formed across a substrate 10 at the center of a substrate 10 surface made of MgO having a (100) surface, Ar ion milling is performed with the line 11 as a mask to etch the substrate 10 surface except the line 11, and a sharp protrusion 1a is left only under the line 11. Then the unnecessary line 11 is removed and a thin superconducting film 3 is adhered to an entire surface of the substrate 10 while the thin film 3 is sharply bitten into a ridge of the protrusion 1a. Then patterning is done with resist applied on the entire surface to be exposed and developed, ion milling is done to make a pattern having a bridge 4 across electrodes 2, 3 and the protrusion 1a. The substrate may be SrTiO2 and the thin film may be YBCO, Bi or Ti.

公开(公告)号：JPH03252180A

公开(公告)日：1991-11-11

申请号：JP5022590

申请日：1990-02-28

Applicant: SHIMADZU CORP

Inventor： KITA JUNICHI

IPC: H01L39/22

Abstract: PURPOSE:To grain boundary Josephson junction element having excellent reproducibility and high performance by providing an oblique step on a board, so forming an epitaxially grown film of a superconductor as to bridge over the step on the surface, and forming a reduced width part at the step as a bridge. CONSTITUTION:An oblique step 1c of thetaapprox.=7 deg. is formed on a board 1 and YBCO epitaxially grown films 2a, 2b of c-axis orientation are formed at both sides of the step 1c at flat surfaces 1a, 1b of the upper and lower steps. The widths of the films 2a, 2b are narrowed near the step 1c to form a bridge 3, and thin films 2a, 2b of the flat surfaces of the upper and lower steps are bonded to each other. The direction (an arrow with a solid line) of the c-axis of the film 2a on the surface 1a and the direction (broken line arrows) of the c-axis of the film 2b on the surface 1b are deviated at inclining angle theta to the surfaces 1a, 1b.

公开(公告)号：JPH0323684A

公开(公告)日：1991-01-31

申请号：JP15914589

申请日：1989-06-20

Applicant: SHIMADZU CORP

Inventor： YAMADA YASUHARU ,  KITA JUNICHI

IPC: H01L39/22

Abstract: PURPOSE:To increase critical current at a bank part and reduce it at a link part in a junction by allowing current to flow in a direction crossing an axis c at the bank part and by allowing a junction current in the link part to flow in a direction parallel to the axis c. CONSTITUTION:A stage difference part 1 is formed on the surface of an MgO substrate 1, a first high-temperature superconductive thin film 2 and a second high-temperature superconductive thin film 3 oriented in an axis c are formed at the upper-stage and lower-stage sides, respectively. These thin films 2 and 3 are joined at a link part 4 consisting of a high-temperature superconductive thin film oriented in the axis c which is formed at the stage part 1a on the surface of the substrate 1. Then, the lower surface of the thin film 2 is located at the upper part from the upper surface of the thin film 3 in the junction part by the link part 4, thus obtaining a Josephson junction with a large critical current at the bank part and a small critical current at the link part. Also, the weak link length can be extended to 3-5 times or less than a coherent length easily without depending on fine machining on a plane.

公开(公告)号：JPH02213176A

公开(公告)日：1990-08-24

申请号：JP3340989

申请日：1989-02-13

Applicant: SHIMADZU CORP

Inventor： KITA JUNICHI

IPC: H01L39/22 ,  H01L39/24

Abstract: PURPOSE:To obtain the title device having high performance and being excellent in reproducibility of manufacture and a yield by the use of an oxide high-temperature superconductor, by a method wherein a stepped part is provided on the surface of a substrate, a specific groove is formed in the flat surface on the upper stage side thereof and superconducting thin films are formed on the flat surfaces on the upper and lower stage sides of the opposite sides of a stepped part respectively, etc. CONSTITUTION:Superconducting thin films 2 and 3 are formed respectively on the flat surfaces on the upper and lower stage sides on the opposite sides of a stepped part 1a of a substrate l on the surface of which steps are provided and in the flat surface on the upper stage side of which a groove 1b one end of which reaches the stepped part 1a and opens laterally is formed, and the superconducting thin films 2 and 3 on said upper stage and lower stage sides are junctioned with each other through a superconductor getting into the groove 1b. For instance, a difference of 500nm is provided between steps of the surface of an MgO substrate 1, and the groove 1b 250nm deep and 1mum wide is formed at a length of about 20mum in the flat surface on the upper step side so that one end thereof opens laterally in the stepped part 1a. Then, the superconducting thin films 2 and 3 made up of YBCO and having a uniform thickness of 350nm are formed on the whole of the surface of the substrate 1 so that the superconductor gets into the groove 1b in the process of formation of the films.

公开(公告)号：JPH02159078A

公开(公告)日：1990-06-19

申请号：JP31480288

申请日：1988-12-12

Applicant: SHIMADZU CORP

Inventor： KITA JUNICHI ,  YAMADA YASUHARU ,  YOSHII MITSUYOSHI ,  IHARADA KENJI ,  SHINADA MEGUMI

IPC: H01L39/22

Abstract: PURPOSE:To change the temperature of a Josephson junction section, and to adjust the critical current value of the Josephson junction section by forming a conductible resistor film near the Josephson junction section and controlling the quantity of conduction from the outside to the resistor film. CONSTITUTION:A substrate 1 is made of MgO, YB2Cu3Ox is film-formed onto the substrate 1 through a sputtering method, a resist mask is prepared through photolithography, and the film is etched through Ar ion milling, thus acquiring a loop-shaped superconducting thin-film 2 and a micro-bridge type Josephson junction section J. MgO is film-formed so as to cover only a section near the Josephson junction section J centering around the junction section J in the upper section of the junction section J, and an insulating film 3 is shaped. Ta is film-formed so as to pass through a section just above the Josephson junction section J in the upper section of the insulating film 3, and used as a resistor film 4. When a supply current value to the resistor film 4 is changed, the resistor film 4 is heat-generated only by quantity corresponding to the current value, and the temperature of the Josephson junction section J is elevated. Currents made to flow through the resistor film 4 are controlled, thus controlling the critical current value of the junction section to a desired value.