公开(公告)号：CA674121A

公开(公告)日：1963-11-12

申请号：CA674121D

Applicant: SIEMENS AG

Inventor： BERGER GUNTHER ,  KELLER WOLFGANG ,  REUSCHEL KONRAD

公开(公告)号：AU7567081A

公开(公告)日：1982-04-01

申请号：AU7567081

申请日：1981-09-25

Applicant: SIEMENS AG

Inventor： REUSCHEL KONRAD

IPC: B22D27/04 ,  B22D27/15 ,  B22D27/20 ,  C30B15/00 ,  C30B15/02 ,  C30B15/08 ,  B22D21/00

公开(公告)号：NO813244L

公开(公告)日：1982-03-29

申请号：NO813244

申请日：1981-09-23

Applicant: SIEMENS AG

Inventor： REUSCHEL KONRAD

IPC: B22D27/04 ,  B22D27/15 ,  B22D27/20 ,  C30B15/00 ,  C30B15/02 ,  C30B15/08 ,  C30B

公开(公告)号：CA1091992A

公开(公告)日：1980-12-23

申请号：CA273189

申请日：1977-03-04

Applicant: SIEMENS AG

Inventor： REUSCHEL KONRAD ,  DIETZE WOLFGANG ,  RUCHA ULRICH

IPC: C01B33/02 ,  C01B33/035 ,  C23C16/22 ,  C23C16/24 ,  C23C16/44 ,  C23C16/52 ,  H01L21/205 ,  B01J17/32

Abstract: The depositing of Si upon a rod-shaped carrier which is heated in a flowing reaction gas adapted to separate Si and deposit it upon the surface of the said carrier, the flow of the said reaction gas being so regulated that the rate of deposition per cm2 of the carrier surface remaining constan?.

公开(公告)号：CA1009548A

公开(公告)日：1977-05-03

申请号：CA176247

申请日：1973-07-12

Applicant: SIEMENS AG

Inventor： KELLER WOLFGANG ,  MUEHLBAUER ALFRED ,  REUSCHEL KONRAD

IPC: C30B13/30

公开(公告)号：CA873592A

公开(公告)日：1971-06-15

申请号：CA873592D

Applicant: SIEMENS AG

Inventor： REUSCHEL KONRAD ,  KERSTING ARNO ,  EMEIS REIMER ,  KELLER WOLFGANG

公开(公告)号：CA760951A

公开(公告)日：1967-06-13

申请号：CA760951D

Applicant: SIEMENS AG

Inventor： REUSCHEL KONRAD

公开(公告)号：CA676343A

公开(公告)日：1963-12-17

申请号：CA676343D

Applicant: SIEMENS AG

Inventor： REUSCHEL KONRAD

公开(公告)号：CA668520A

公开(公告)日：1963-08-13

申请号：CA668520D

Applicant: SIEMENS AG

Inventor： HOFFMANN ARNULF ,  KELLER WOLFGANG ,  RUMMEL THEODOR ,  REUSCHEL KONRAD

公开(公告)号：FR2532335A1

公开(公告)日：1984-03-02

申请号：FR8313713

申请日：1983-08-25

Applicant: SIEMENS AG

Inventor： REUSCHEL KONRAD

IPC: C30B29/06 ,  C30B15/04 ,  C30B31/06 ,  H01L31/10 ,  C30B31/00 ,  C23C11/06 ,  H01L31/06

Abstract: Materials(a) are free from dislocations and, during the addn. of dopants(b), at least one other material(c) is added. Material(c) has no electrical effect on the semiconductor(a), but at least partly compensates the lattice stresses created in the semiconductor(a) by dopant(b). Material(c) is pref. added during the mfr. of poly Si(a) by CVD using SiHCl3 or SiCl4 in H2 employed as a carrier gas, the Si being deposited on an Si substrate heated by electrical resistance. Alternatively, materials(a,b,c) are placed in a crucible and a highly doped rod(a,b,c) is made by the Czochralski process. Another pref. alternative is to diffuse materials(b,c) simultaneously into semiconductor wafers(a). For Si(a) doped with In(b), material(c) is pref. carbon; whereas for Si doped with Sb, material(c) is pref. C and/or oxygen. Used in mfr. of optoelectronic devices, esp. infrared sensors consisting of Si doped with In; or solar cells. Lattice stresses in the Si caused by high dopant concn. create noise in the devices; and the invention minimises such noise.