公开(公告)号：US3865647A

公开(公告)日：1975-02-11

申请号：US34825973

申请日：1973-04-05

Applicant: SIEMENS AG

Inventor： REUSCHEL KONRAD

IPC: C23C8/00 ,  H01L21/205 ,  H01L7/36

CPC classification number: C23C8/00 ,  H01L21/02532 ,  H01L21/0262

Abstract: Silicochloroform and hydrogen flow through a heated rod for example of silicon. The inside of the rod wall is of silicon. The precipitation of silicon takes place within the rod wall to form a growing inner tube.

Abstract translation: 硅氯仿和氢气流过例如硅的加热棒。 杆壁的内部是硅。 硅的析出发生在棒壁内，形成一个不断增长的内管。

公开(公告)号：US3454367A

公开(公告)日：1969-07-08

申请号：US3454367D

申请日：1965-10-19

Applicant: SIEMENS AG

Inventor： REUSCHEL KONRAD

IPC: C30B13/30 ,  B01J17/10 ,  C01B33/02

CPC classification number: C30B13/30 ,  Y10S117/91 ,  Y10S117/912

公开(公告)号：US3915660A

公开(公告)日：1975-10-28

申请号：US37894373

申请日：1973-07-13

Applicant: SIEMENS AG

Inventor： KELLER WOLFGANG ,  MUEHLBAUER ALFRED ,  REUSCHEL KONRAD

IPC: C30B13/28 ,  B01J3/00 ,  C30B13/30 ,  H01L21/208 ,  B01D9/00 ,  B01J17/20

CPC classification number: C30B13/30 ,  B01J3/004 ,  Y10T428/24942 ,  Y10T428/2913

Abstract: A process for preparing oriented semiconductor monocrystalline rods with a specific resistance which drops towards the center of the rod. The process utilizes rapid non-crucible moving zone melting of a preformed vertically positioned semiconductor rod using an inductive heating device which annularly surrounds the rod.

Abstract translation: 制备具有电阻的朝向棒中心的取向半导体单晶棒的方法。 该方法使用环形围绕杆的感应加热装置利用预先形成的垂直定位的半导体棒的快速非坩埚移动区域熔化。

公开(公告)号：US3698354A

公开(公告)日：1972-10-17

申请号：US3698354D

申请日：1971-01-22

Applicant: SIEMENS AG

Inventor： REUSCHEL KONRAD ,  PLATZODER KARL ,  KURSAWE HELGA

IPC: C23C16/44 ,  C23C16/455 ,  C30B31/10 ,  C30B31/16 ,  H01L21/00 ,  H01L21/223 ,  C23C13/08

CPC classification number: C30B31/165 ,  C30B31/10 ,  H01L21/00 ,  Y10S118/90

Abstract: The present invention relates to a device for indiffusing dopants into a semiconductor material, in high vacuum. The device comprises a heatable ampule which is accommodated in a sealed container and consists of the same semiconductor material and contains wafers of the semiconductor material to be doped. The ampule, at least on its outer surface, has at least a partially polycrystalline surface. The ampule has openings whose area is small in comparison to the cross-section surface of the ampule and that a dopant source is available which is located outside the ampule but within the sealed container.

公开(公告)号：US3558376A

公开(公告)日：1971-01-26

申请号：US3558376D

申请日：1967-01-05

Applicant: SIEMENS AG

Inventor： SCHMIDT OTTO ,  WARTENBERG KLAUS ,  REUSCHEL KONRAD

IPC: C30B11/06 ,  C30B13/12 ,  H01L7/36 ,  H01L7/44

CPC classification number: C30B11/06 ,  C30B13/12 ,  Y10S117/906 ,  Y10S118/90 ,  Y10S252/951

Abstract: CONTROLLED PROCESS FOR INTRODUCING FOREIGH SUBSTANCES, E.G. DOPANTS AND RECOMBINATION CENTERS, INTO A MOLTEN SEMICONDUCTOR BODY BY DIRECTING FOREIGN SUBSTANCE IN GASEOUS FORM IN THE IMMEDIATE VICINITY OF THE MELT.

公开(公告)号：US3461359A

公开(公告)日：1969-08-12

申请号：US3461359D

申请日：1968-01-24

Applicant: SIEMENS AG

Inventor： RAITHEL KURT ,  REUSCHEL KONRAD ,  KELLER WOLFGANG

IPC: H01L21/00 ,  H01L23/58 ,  H01L29/00 ,  H01L29/36 ,  H01L29/74 ,  H01L3/00 ,  H01L5/00

CPC classification number: H01L29/36 ,  H01L21/00 ,  H01L23/58 ,  H01L29/00 ,  H01L29/74 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：US3446653A

公开(公告)日：1969-05-27

申请号：US50031565

申请日：1965-10-21

Applicant: SIEMENS AG

Inventor： REUSCHEL KONRAD ,  SCHINK NORBERT

IPC: C01B33/02 ,  C30B11/06 ,  C30B13/10 ,  C30B15/00 ,  H01L21/00 ,  B44D1/18 ,  C23C13/00

CPC classification number: C30B29/06 ,  C01B33/02 ,  C30B11/06 ,  C30B13/10 ,  C30B15/00 ,  H01L21/00 ,  Y10S148/016 ,  Y10S148/049 ,  Y10S148/06 ,  Y10S148/097 ,  Y10S148/107 ,  Y10S148/13

公开(公告)号：US3892827A

公开(公告)日：1975-07-01

申请号：US87227869

申请日：1969-10-29

Applicant: SIEMENS AG

Inventor： KELLER WOLFGANG ,  KERSTING ARNO ,  REUSCHEL KONRAD

IPC: C23C16/44 ,  C23C16/01 ,  C30B29/60 ,  H01L21/22 ,  B29C23/00

CPC classification number: C23C16/01

Abstract: Process of producing a hollow semiconductor body, particularly of silicon, by precipitating through a reaction with a gaseous semiconductor compound on an electrically heated mandrel, the improvement comprising coating the mandrel with soot prior to precipitating the semiconductor material.

公开(公告)号：US3868924A

公开(公告)日：1975-03-04

申请号：US29517372

申请日：1972-10-05

Applicant: SIEMENS AG

Inventor： REUSCHEL KONRAD ,  KELLER WOLFGANG ,  KERSTING ARNO ,  EMEIS REIMER

IPC: C23C16/44 ,  C30B31/10 ,  C30B31/12 ,  C23C13/08

CPC classification number: C30B31/10 ,  C23C16/44 ,  C30B31/12 ,  Y10S118/90

Abstract: Apparatus for indiffusing dopant into a semiconductor material. The apparatus comprises a heatable tube of the same semiconductor material, the wall of which is from 0.5 to 20 mm thick and is gas-tight under reaction conditions. Heating means include an induction coil spaced from the heatable tube and a relatively narrow graphite ring fixed about the tube to accelerate such heating.

Abstract translation: 用于将掺杂剂掺杂到半导体材料中的装置。 该装置包括相同半导体材料的可加热管，其壁厚为0.5至20mm，在反应条件下气密。 加热装置包括与可加热管隔开的感应线圈和围绕管固定的相对窄的石墨环以加速这种加热。

公开(公告)号：US3685973A

公开(公告)日：1972-08-22

申请号：US3685973D

申请日：1970-09-16

Applicant: SIEMENS AG

Inventor： KELLER WOLFGANG ,  REUSCHEL KONRAD

IPC: C30B13/28 ,  B01J17/10

CPC classification number: C30B13/28

Abstract: IN A METHOD OF ZONE MELTING A SEMICONDUCTOR ROD, THE ROD IS SUBSTANTIALLY VERTICALLY SUPPORTED AT ONE END BY A FIRST END HOLDER LOCATED IN THE SUBSTANTIALLY VERTICAL AXIS OF THE ROD, A SEED CRYSTAL BEING ATTACHED TO THE OTHER END OF THE ROD AND HAVING A FREE END SUPPORTED BY A SECOND END HOLDER, AND A MOLTEN ZONE IS FORMED IN THE ROD BY AN ANNULAR HEATING DEVICE SURROUNDING THE ROD AND DIVIDING IT INTO TWO ROD PORTIONS, THE ANNULAR HEATING DEVICE AND THE ROD BEING MOVED RELATIVE TO ONT ANOTHER IN THE AXIAL DIRECTION OF THE ROD FROM THE SEED CRYSTAL TO THE FIRST END HOLDER SO THAT ONE OF THE PORTIONS OF THE ROD IS SUPPLIED TO THE MELT AND THE OTHER PORTION THEREOF CRYSTALLIZES OUT OF THE MELT. THE IMPROVEMENT IN THE METHOD INCLUDES LATERALLY DISPLACING THE ANNULAR HEATING DEVICE TO A POSITION ECCENTRIC TO THE AXIS OF THE ROD BUT NEVERTHELESS STILL SURROUNDING THE ROD, AND MAINTAINING THE ECCENTRIC RELATIONSHIP OF THE ANNULAR HEATING DEVICE TO THE ROD FOR AT LEAST PART OF THE MOLTEN ZONE PASS ALONG THE ROD.