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公开(公告)号：CA2519872A1
公开(公告)日：2004-10-28
申请号：CA2519872
申请日：2004-04-12
Applicant: SIOPTICAL INC
Inventor： GOTHOSKAR PRAKASH , GHIRON MARGARET , MONTGOMERY ROBERT KEITH , YANUSHEFSKI KATHERINE A , PATEL VIPULKUMAR , PATHAK SOHAM , SHASTRI KALPENDU
Abstract: A practical realization for achieving and maintaining high-efficiency transf er of light from input and output free-space optics to a high-index waveguide o f submicron thickness is described. The required optical elements and methods of fabricating, aligning, and assembling these elements are discussed. Maintaining high coupling efficiency reliably over realistic ranges of devic e operating parameters is discussed in the context of the preferred embodiment s.
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公开(公告)号：EP1613991A4
公开(公告)日：2009-10-28
申请号：EP04758207
申请日：2004-03-23
Applicant: SIOPTICAL INC
Inventor： MONTGOMERY ROBERT KEITH , GHIRON MARGARET , GOTHOSKAR PRAKASH , PATEL VIPULKUMAR , SHASTRI KALPENDU , PATHAK SOHAM , YANUSHEFSKI KATHERINE A
CPC classification number: G02F1/025 , G02B2006/12142 , G02B2006/12159 , G02F1/2257
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23.发明公开CMOS-COMPATIBLE INTEGRATION OF SILICON-BASED OPTICAL DEVICES WITH ELECTRONIC DEVICES 有权CMOS-KOMPATIBLE INTEGRATION VONSILIZIUMGESTÜTZTENOPTISCHEN BAUELEMENTEN MIT ELEKTRONISCHEN BAUELEMENTEN
公开(公告)号：EP1625615A4
公开(公告)日：2007-05-16
申请号：EP04750395
申请日：2004-04-21
Applicant: SIOPTICAL INC , PATEL VIPULKUMAR , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , SHASTRI KALPENDU , PATHAK SOHAM , YANUSHEFSKI KATHERINE A
Inventor： PATEL VIPULKUMAR , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , SHASTRI KALPENDU , PATHAK SOHAM , YANUSHEFSKI KATHERINE A
IPC: H01L21/76 , G02B6/12 , G02F1/025 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L27/146 , H01L31/12
CPC classification number: H01L27/14689 , G02B6/12004 , G02F1/025 , H01L21/84 , H01L27/1203 , H01L27/13 , H01L27/14636 , H01L27/14643 , H01L31/12
Abstract: A conventional CMOS fabrication technique is used to integrate the formation of passive optical devices and active electro-optic devices with standard CMOS electrical devices on a common SOI structure. The electrical devices and optical devices share the same surface SOI layer (a relatively thin, single crystal silicon layer), with various required semiconductor layers then formed over the SOI layer. In some instances, a set of process steps may be used to simultaneously form regions in both electrical and optical devices. Advantageously, the same metallization process is used to provide electrical connections to the electrical devices and the active electro-optic devices.
Abstract translation: 常规的CMOS制造技术被用于将无源光学器件和有源电光器件与标准CMOS电器件的形成集成在公共SOI结构上。 电子器件和光学器件共享相同的表面SOI层（相对薄的单晶硅层），然后在SOI层上形成各种所需的半导体层。 在一些情况下，可以使用一组处理步骤来同时在电和光学器件中形成区域。 有利地，使用相同的金属化工艺来提供到电气设备和主动电光器件的电连接。
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24.发明公开ACTIVE MANIPULATION OF LIGHT IN A SILICON-ON-INSULATOR (SOI) STRUCTURE 有权EINER SOI-STRUKTUR（SOI-硅绝缘体）中的吸附性
公开(公告)号：EP1743376A4
公开(公告)日：2012-05-30
申请号：EP05732990
申请日：2005-02-28
Applicant: SIOPTICAL INC , GOTHOSKAR PRAKASH , GHIRON MARGARET , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , SHASTRI KALPENDU , PATHAK SOHAM , YANUSHEFSKI KATHERINE A
Inventor： GOTHOSKAR PRAKASH , GHIRON MARGARET , MONTGOMERY ROBERT KEITH , PATEL VIPULKUMAR , SHASTRI KALPENDU , PATHAK SOHAM , YANUSHEFSKI KATHERINE A
IPC: G02B6/26 , G02B6/10 , G02B6/12 , G02F1/025 , H01L27/14 , H01L27/15 , H01L29/22 , H01L31/00 , H01L33/00
CPC classification number: G02B6/12004 , G02F1/025 , G02F1/292 , G02F2001/294
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公开(公告)号：EP1625679A4
公开(公告)日：2008-10-08
申请号：EP04751784
申请日：2004-05-10
Applicant: SIOPTICAL INC , SHASTRI KALPENDU , GOTHOSKAR PRAKASH , GHIRON MARGARET , PATEL VIPULKUMAR , MONTGOMERY ROBERT KEITH , PATHAK SOHAM , YANUSHEFSKI KATHERINE A
Inventor： SHASTRI KALPENDU , GOTHOSKAR PRAKASH , GHIRON MARGARET , PATEL VIPULKUMAR , MONTGOMERY ROBERT KEITH , PATHAK SOHAM , YANUSHEFSKI KATHERINE A
IPC: H04B10/155 , G02F1/01 , G02F1/015 , G02F1/025 , G02F1/225
CPC classification number: G02F1/025 , G02F1/0121 , G02F1/225 , G02F2001/0152 , H04B10/505 , H04B10/58
Abstract: An electro-optic modulator arrangement for achieving switching speeds greater than 1 Gb/s utilizes pre-emphasis pulses to accelerate the change in refractive index of the optical waveguide used to form the electro-optic modulator. In one embodiment, a feedback loop may be added to use a portion of the modulated optical output signal to adjust the magnitude and duration of the pre-emphasis pulses, as well as the various reference levels used for modulated. For free carrier-based electro-optic modulators, including silicon-based electro-optic modulators, the pre-emphasis pulses are used to accelerate the movement of free carriers at the transitions between input signal data values.
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Patent Agency Ranking
公开(公告)号：CA2520972C
公开(公告)日：2010-01-26
申请号：CA2520972
申请日：2004-04-21
Applicant: SIOPTICAL INC
Inventor： PATEL VIPULKUMAR , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , SHASTRI KALPENDU , PATHAK SOHAM , YANUSHEFSKI KATHERINE A
IPC: H01L21/76 , G02B6/12 , G02F1/025 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L27/146 , H01L31/12
Abstract: A conventional CMOS fabrication technique is used to integrate the formation of passive optical devices and active electro-optic devices with standard CMOS electrical devices on a common SOI structure. The electrical devices and optical devices share the same surface SOI layer (a relatively thin, single crystal silicon layer), with various required semiconductor layers then formed over the SOI layer. In some instances, a set of process steps may be used to simultaneously form regions in both electrical and optical devices. Advantageously, the same metallization process is used to provide electrical connections to the electrical devices and the active electro-optic devices.
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公开(公告)号：CA2557509A1
公开(公告)日：2005-09-09
申请号：CA2557509
申请日：2005-02-28
Applicant: SIOPTICAL INC
Inventor： MONTGOMERY ROBERT KEITH , YANUSHEFSKI KATHERINE A , SHASTRI KALPENDU , PATEL VIPULKUMAR , GHIRON MARGARET , GOTHOSKAR PRAKASH , PATHAK SOHAM
Abstract: An arrangement for actively controlling, in two dimensions, the manipulation of light within an SOI-based optical structure utilizes doped regions formed within the SOI layer and a polysilicon layer of a silicon-insulator-silicon capacitive (SISCAP) structure. The regions are oppositely doped so as to form an active device, where the application of a voltage potential between the oppositely doped regions functions to modify the refractive index in the affected area and alter the properties of an optical signal propagating through the region. The doped regions may be advantageously formed to exhibit any desired "shaped" (such as, for example, lenses, prisms, Bragg gratings, etc.), so as to manipulate the propagating beam as a function of the known properties of these devices. One or more active devices of the present invention may be included within a SISCAP formed, SOI-based optical element (such as, for example, a Mach-Zehnder interferometer, ring resonator, optical switch, etc.) so as to form an active, tunable element.
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28.发明专利
公开(公告)号：CA2528184A1
公开(公告)日：2004-10-14
申请号：CA2528184
申请日：2004-03-30
Applicant: SIOPTICAL INC
Inventor： GOTHOSKAR PRAKASH , GHIRON MARGARET , YANUSHEFSKI KATHERINE A , MONTGOMERY ROBERT KEITH , SHASTRI KALPENDU , PATHAK SOHAM , PATEL VIPULKUMAR
IPC: H01L21/302 , H01L20060101 , H01L27/148 , H01L31/00
Abstract: A photodetector (10) for use with relatively thin (i.e., sub-micron) silicon optical waveguides formed in a silicon-on-insulator (SOI) structure comprise s a layer of poly-germanium disposed to couple at least a portion of the optic al signal propagating along the silicon optical waveguide. Tight confinement of the optical signal within the waveguide structure allows for efficient evanescent coupling into the poly-germanium detector. The silicon optical waveguide may comprise any desired geometry, with the poly-germanium detecto r (10) formed to either cover a portion of the waveguide, or be butt-coupled t o an end portion of the waveguide. When covering a portion of the waveguide, poly-germanium detector (10) may comprise a "wrap-around" geometry to cover the side and top surfaces of the optical waveguide, with electrical contacts formed at opposing ends of the detector (10).
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公开(公告)号：EP2027497A4
公开(公告)日：2011-03-09
申请号：EP07809457
申请日：2007-06-11
Applicant: SIOPTICAL INC
Inventor： MONTGOMERY ROBERT KEITH , GHIRON MARGARET , GOTHOSKAR PRAKASH , MOSINSKIS PAULIUS MINDAUGAS , PATEL VIPULKUMAR , SHASTRI KALPENDU , WEBSTER MARK
CPC classification number: G02F1/025 , G02F1/0147 , G02F1/225 , G02F2201/126
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公开(公告)号：EP1716596A4
公开(公告)日：2007-03-21
申请号：EP04811306
申请日：2004-11-17
Applicant: SIOPTICAL INC , PATEL VIPULKUMAR , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATHAK SOHAM , PIEDE DAVID , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
Inventor： PATEL VIPULKUMAR , GHIRON MARGARET , GOTHOSKAR PRAKASH , MONTGOMERY ROBERT KEITH , PATHAK SOHAM , PIEDE DAVID , SHASTRI KALPENDU , YANUSHEFSKI KATHERINE A
IPC: H01L27/14 , G02B6/12 , G02B6/122 , H01L31/00 , H01L31/0224 , H01L31/0232 , H01L31/0392 , H01L31/06 , H01L31/108 , H01L31/153
CPC classification number: H01L31/108 , G02B6/12004 , G02B6/1228 , H01L31/022408 , H01L31/0232 , H01L31/03921 , H01L31/153 , Y02E10/50
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