Method and system for forming a membrane over a cavity
    24.
    发明授权
    Method and system for forming a membrane over a cavity 有权
    在空腔上形成膜的方法和系统

    公开(公告)号:US09184094B1

    公开(公告)日:2015-11-10

    申请号:US13750163

    申请日:2013-01-25

    Inventor: Elton Marchena

    Abstract: A method of fabricating a semiconductor device includes providing an assembly substrate including a split plane defining a handle region and a transfer region, a film layer coupled to the transfer region, and one or more active devices coupled to the film layer. The method also includes providing a device substrate including one or more bonding regions and joining the assembly substrate to the device substrate. The method further includes splitting the assembly substrate to remove the handle region.

    Abstract translation: 一种制造半导体器件的方法包括提供包括限定手柄区域和转移区域的分裂平面的组合衬底,耦合到转移区域的膜层以及耦合到膜层的一个或多个有源器件。 该方法还包括提供包括一个或多个结合区域并将组装衬底接合到器件衬底的器件衬底。 该方法还包括拆分组件衬底以移除把手区域。

    VERTICAL INTEGRATION OF CMOS ELECTRONICS WITH PHOTONIC DEVICES
    25.
    发明申请
    VERTICAL INTEGRATION OF CMOS ELECTRONICS WITH PHOTONIC DEVICES 有权
    CMOS电子与光电器件的垂直集成

    公开(公告)号:US20150123157A1

    公开(公告)日:2015-05-07

    申请号:US14482650

    申请日:2014-09-10

    Abstract: A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices, providing a compound semiconductor substrate including a plurality of photonic devices, and dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method also includes providing an assembly substrate having a base layer and a device layer including a plurality of CMOS devices, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, and aligning the SOI substrate and the assembly substrate. The method further includes joining the SOI substrate and the assembly substrate to form a composite substrate structure and removing at least the base layer of the assembly substrate from the composite substrate structure.

    Abstract translation: 制造复合半导体结构的方法包括提供包括多个硅基器件的SOI衬底,提供包括多个光子器件的化合物半导体衬底,以及切割化合物半导体衬底以提供多个光子管芯。 每个管芯包括多个光子器件中的一个或多个。 该方法还包括提供具有基底层和包括多个CMOS器件的器件层的组装衬底,将多个光子管芯安装在组件衬底的预定部分上,以及对准SOI衬底和组件衬底。 该方法还包括将SOI衬底和组件衬底接合以形成复合衬底结构,并从复合衬底结构去除组装衬底的至少基底层。

    METHOD AND SYSTEM FOR THE MONOLITHIC INTEGRATION OF CIRCUITS FOR MONITORING AND CONTROL OF RF SIGNALS
    30.
    发明申请
    METHOD AND SYSTEM FOR THE MONOLITHIC INTEGRATION OF CIRCUITS FOR MONITORING AND CONTROL OF RF SIGNALS 有权
    用于监视和控制RF信号的电路的单片集成方法和系统

    公开(公告)号:US20160248516A1

    公开(公告)日:2016-08-25

    申请号:US15048222

    申请日:2016-02-19

    Abstract: A method of operating a BPSK modulator includes receiving an RF signal at the BPSK modulator and splitting the RF signal into a first portion and a second portion that is inverted with respect to the first portion. The method also includes receiving the first portion at a first arm of the BPSK modulator, receiving the second portion at a second arm of the BPSK modulator, applying a first tone to the first arm of the BPSK modulator, and applying a second tone to the second arm of the BPSK modulator. The method further includes measuring a power associated with an output of the BPSK modulator and adjusting a phase applied to at least one of the first arm of the BPSK modulator or the second arm of the BPSK modulator in response to the measured power.

    Abstract translation: 一种操作BPSK调制器的方法包括在BPSK调制器处接收RF信号,并将RF信号分成第一部分和相对于第一部分反相的第二部分。 该方法还包括在BPSK调制器的第一臂处接收第一部分,在BPSK调制器的第二臂处接收第二部分,向BPSK调制器的第一臂应用第一音调,并向第 BPSK调制器的第二臂。 该方法还包括测量与BPSK调制器的输出相关联的功率,并且响应于测量的功率调整施加到BPSK调制器的第一臂或BPSK调制器的第二臂中的至少一个的相位。

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