公开(公告)号：US12287510B2

公开(公告)日：2025-04-29

申请号：US17520467

申请日：2021-11-05

Applicant: Skorpios Technologies, Inc.

Inventor： Stephen B. Krasulick ,  John Dallesasse ,  Amit Mizrahi ,  Timothy Creazzo ,  Elton Marchena ,  John Y. Spann

IPC: G02B6/12 ,  H01S5/02326 ,  H01S5/00 ,  H01S5/14

Abstract: A composite device for splitting photonic functionality across two or more materials comprises a platform, a chip, and a bond securing the chip to the platform. The platform comprises a base layer and a device layer. The device layer comprises silicon and has an opening exposing a portion of the base layer. The chip, a material, comprises an active region (e.g., gain medium for a laser). The chip is bonded to the portion of the base layer exposed by the opening, such that the active region of the chip is aligned with the device layer of the platform.

公开(公告)号：US11181688B2

公开(公告)日：2021-11-23

申请号：US15073957

申请日：2016-03-18

Applicant: Skorpios Technologies, Inc.

Inventor： Stephen B. Krasulick ,  John Dallesasse ,  Amit Mizrahi ,  Timothy Creazzo ,  Elton Marchena ,  John Y. Spann

IPC: G02B6/12 ,  H01S5/02326 ,  H01S5/00 ,  H01S5/14

Abstract: A composite device for splitting photonic functionality across two or more materials comprises a platform, a chip, and a bond securing the chip to the platform. The platform comprises a base layer and a device layer. The device layer comprises silicon and has an opening exposing a portion of the base layer. The chip, a material, comprises an active region (e.g., gain medium for a laser). The chip is bonded to the portion of the base layer exposed by the opening such that the active region of the chip is aligned with the device layer of the platform. A coating hermetically seals the chip in the platform.

公开(公告)号：US09659993B2

公开(公告)日：2017-05-23

申请号：US14482650

申请日：2014-09-10

Applicant: Skorpios Technologies, Inc.

Inventor： John Dallesasse ,  Stephen B. Krasulick ,  Timothy Creazzo ,  Elton Marchena

IPC: H01L27/146 ,  H01L27/15 ,  H01L21/762 ,  H01L27/12 ,  H01L21/8258 ,  H01L21/84 ,  H01L27/06 ,  H01L21/822

CPC classification number: H01L27/14689 ,  H01L21/76254 ,  H01L21/8221 ,  H01L21/8258 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/12 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/15

Abstract: A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices, providing a compound semiconductor substrate including a plurality of photonic devices, and dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method also includes providing an assembly substrate having a base layer and a device layer including a plurality of CMOS devices, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, and aligning the SOI substrate and the assembly substrate. The method further includes joining the SOI substrate and the assembly substrate to form a composite substrate structure and removing at least the base layer of the assembly substrate from the composite substrate structure.

公开(公告)号：US09479262B2

公开(公告)日：2016-10-25

申请号：US15048222

申请日：2016-02-19

Applicant: Skorpios Technologies, Inc.

Inventor： Stephen B. Krasulick ,  Timothy Creazzo ,  Kalpit Jha ,  Elton Marchena ,  Amit Mizrahi

IPC: H04B10/00 ,  H04B10/556 ,  H04B10/564 ,  H04B10/079 ,  H04J14/02 ,  H04J14/00

CPC classification number: H04B10/5561 ,  H04B10/07955 ,  H04B10/5053 ,  H04B10/564 ,  H04J14/0227 ,  H04L27/2096

Abstract: A method of operating a BPSK modulator includes receiving an RF signal at the BPSK modulator and splitting the RF signal into a first portion and a second portion that is inverted with respect to the first portion. The method also includes receiving the first portion at a first arm of the BPSK modulator, receiving the second portion at a second arm of the BPSK modulator, applying a first tone to the first arm of the BPSK modulator, and applying a second tone to the second arm of the BPSK modulator. The method further includes measuring a power associated with an output of the BPSK modulator and adjusting a phase applied to at least one of the first arm of the BPSK modulator or the second arm of the BPSK modulator in response to the measured power.

Abstract translation: 一种操作BPSK调制器的方法包括在BPSK调制器处接收RF信号，并将RF信号分成第一部分和相对于第一部分反相的第二部分。 该方法还包括在BPSK调制器的第一臂处接收第一部分，在BPSK调制器的第二臂处接收第二部分，向BPSK调制器的第一臂应用第一音调，并向第 BPSK调制器的第二臂。 该方法还包括测量与BPSK调制器的输出相关联的功率，并且响应于测量的功率调整施加到BPSK调制器的第一臂或BPSK调制器的第二臂中的至少一个的相位。

公开(公告)号：US09300406B2

公开(公告)日：2016-03-29

申请号：US13959107

申请日：2013-08-05

Applicant: Skorpios Technologies, Inc.

Inventor： Stephen B. Krasulick ,  Timothy Creazzo ,  Kalpit Jha ,  Elton Marchena ,  Amit Mizrahi

IPC: H04B10/00 ,  H04B10/556 ,  H04B10/50 ,  H04J14/00

CPC classification number: H04B10/5561 ,  H04B10/07955 ,  H04B10/5053 ,  H04B10/564 ,  H04J14/0227 ,  H04L27/2096

Abstract: A method of operating a BPSK modulator includes receiving an RF signal at the BPSK modulator and splitting the RF signal into a first portion and a second portion that is inverted with respect to the first portion. The method also includes receiving the first portion at a first arm of the BPSK modulator, receiving the second portion at a second arm of the BPSK modulator, applying a first tone to the first arm of the BPSK modulator, and applying a second tone to the second arm of the BPSK modulator. The method further includes measuring a power associated with an output of the BPSK modulator and adjusting a phase applied to at least one of the first arm of the BPSK modulator or the second arm of the BPSK modulator in response to the measured power.

公开(公告)号：US20150097211A1

公开(公告)日：2015-04-09

申请号：US14509979

申请日：2014-10-08

Applicant: Skorpios Technologies, Inc.

Inventor： Stephen B. Krasulick ,  John Dallesasse ,  Amit Mizrahi ,  Timothy Creazzo ,  Elton Marchena ,  John Y. Spann

IPC: H01L31/109 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/0304

CPC classification number: H01L31/02327 ,  G02B6/423 ,  H01S5/0207 ,  H01S5/021 ,  H01S5/0217 ,  H01S5/0218 ,  H01S5/0224 ,  H01S5/02248 ,  H01S5/02252 ,  H01S5/02268 ,  H01S5/02272 ,  H01S5/02469 ,  H01S5/026 ,  H01S5/3013 ,  H01S2301/176

Abstract: A composite photonic device comprises a platform, a chip, and a contact layer. The platform comprises silicon. The chip is made of a III-V material. The contact layer has indentations to help control a flow of solder during bonding of the platform with the chip. In some embodiments, pedestals are placed under an optical path to prevent solder from flowing between the chip and the platform at the optical path.

Abstract translation: 复合光子器件包括平台，芯片和接触层。 该平台包括硅。 该芯片由III-V材料制成。 接触层具有凹陷以帮助在平台与芯片的接合期间控制焊料的流动。 在一些实施例中，基座放置在光路下方以防止焊料在光路处在芯片和平台之间流动。

公开(公告)号：US20130210214A1

公开(公告)日：2013-08-15

申请号：US13745577

申请日：2013-01-18

Applicant: SKORPIOS TECHNOLOGIES, INC.

Inventor： John Dallesasse ,  Stephen B. Krasulick ,  Timothy Creazzo ,  Elton Marchena

IPC: H01L21/762

CPC classification number: H01L27/14689 ,  H01L21/76254 ,  H01L21/8221 ,  H01L21/8258 ,  H01L21/84 ,  H01L27/0688 ,  H01L27/12 ,  H01L27/14625 ,  H01L27/14634 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/15

Abstract: A method of fabricating a composite semiconductor structure includes providing an SOI substrate including a plurality of silicon-based devices, providing a compound semiconductor substrate including a plurality of photonic devices, and dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method also includes providing an assembly substrate having a base layer and a device layer including a plurality of CMOS devices, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, and aligning the SOI substrate and the assembly substrate. The method further includes joining the SOI substrate and the assembly substrate to form a composite substrate structure and removing at least the base layer of the assembly substrate from the composite substrate structure.

公开(公告)号：US20220171125A1

公开(公告)日：2022-06-02

申请号：US17520467

申请日：2021-11-05

Applicant: Skorpios Technologies, Inc.

Inventor： Stephen B. Krasulick ,  John Dallesasse ,  Amit Mizrahi ,  Timothy Creazzo ,  Elton Marchena ,  John Y. Spann

IPC: G02B6/12 ,  H01S5/02326

Abstract: A composite device for splitting photonic functionality across two or more materials comprises a platform, a chip, and a bond securing the chip to the platform. The platform comprises a base layer and a device layer. The device layer comprises silicon and has an opening exposing a portion of the base layer. The chip, a material, comprises an active region (e.g., gain medium for a laser). The chip is bonded to the portion of the base layer exposed by the opening, such that the active region of the chip is aligned with the device layer of the platform.

公开(公告)号：US20200041732A1

公开(公告)日：2020-02-06

申请号：US16377824

申请日：2019-04-08

Applicant: Skorpios Technologies, Inc.

Inventor： Amit Mizrahi ,  Timothy Creazzo ,  Elton Marchena ,  Derek Van Orden ,  Stephen B. Krasulick

IPC: G02B6/42 ,  G02B6/12 ,  G02B6/28 ,  G02B6/14 ,  G02B6/122 ,  G02B6/26 ,  H01S5/026 ,  H01S5/30

Abstract: A waveguide coupler includes a first waveguide and a second waveguide. The waveguide coupler also includes a connecting waveguide disposed between the first waveguide and the second waveguide. The connecting waveguide includes a first material having a first index of refraction and a second material having a second index of refraction higher than the first index of refraction.

公开(公告)号：US09885832B2

公开(公告)日：2018-02-06

申请号：US14722970

申请日：2015-05-27

Applicant: Skorpios Technologies, Inc.

Inventor： Damien Lambert ,  Nikhil Kumar ,  Elton Marchena ,  Daming Liu ,  Guoliang Li ,  John Zyskind

IPC: G02B6/14 ,  G02B6/122 ,  G02B6/132 ,  G02B6/136 ,  G02B6/30 ,  G02B6/12

CPC classification number: G02B6/14 ,  G02B6/1228 ,  G02B6/132 ,  G02B6/136 ,  G02B6/305 ,  G02B2006/12038 ,  G02B2006/12061 ,  G02B2006/12097 ,  G02B2006/12147 ,  G02B2006/12152

Abstract: A waveguide mode expander couples a smaller optical mode in a semiconductor waveguide to a larger optical mode in an optical fiber. The waveguide mode expander comprises a shoulder made of crystalline silicon and a ridge made of non-crystalline silicon (e.g., amorphous silicon). In some embodiments, the ridge of the waveguide mode expander has a plurality of stages, the plurality of stages have different widths and/or thicknesses at a given cross section.