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公开(公告)号：JPH01130580A
公开(公告)日：1989-05-23
申请号：JP29035587
申请日：1987-11-17
Applicant: SONY CORP
Inventor： ISHIBASHI AKIRA , FUNATO KENJI , MORI YOSHIFUMI
Abstract: PURPOSE:To facilitate application of the title device to a practical circuit and an integrated circuit, by arranging a first and a second electrode parts at linking parts of a multilink current path, providing the multilink current path with third electrode parts, and controlling each path voltage of the multipath. CONSTITUTION:A first and a second electrode parts 1(S), 2(D) corresponding with, e.g., a source and a drain electrodes are arranged on a superconductor, so as to keep a necessary gap. Between them is formed a multilink current path 4 wherein a first and a second current paths, in which Josepheon elements J1, J2 are interposed, are formed in parallel. Third electrodes 3 is arranged, which control for the first and the second current paths 41, 42 to be kept in different electric potentials. By the applied voltages to the third electrode part 3, ON-OFF control of the current between the first and the second electrode parts 1, 2 performed.
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公开(公告)号：JP2006134987A
公开(公告)日：2006-05-25
申请号：JP2004320274
申请日：2004-11-04
Inventor： FUNATO KENJI , TOMITANI SHIGETAKA , HOSHINA YUKIO , GOTO OSAMU
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser capable of achieving the AlGaInN semiconductor laser having a long lifetime and a high reliability, also having excellent characteristics and having an oscillation wavelength longer than 405 nm, and to provide a method for manufacturing the same.
SOLUTION: An AlGaInN semiconductor layer forming a laser structure is grown on a GaN substrate 1 regularly having striped high defect-density regions 2 in a low defect-density region 1, and the AlGaInN semiconductor laser is manufactured by forming laser strips to the AlGaInN semiconductor layer. Distances (d) among the ends of the laser stripes and the end of a nearest second region are set at a value from 0 μm to 60 μm or the value from 10 μm to 50 μm in this case.
COPYRIGHT: (C)2006,JPO&NCIPIAbstract translation: 解决的问题：为了提供能够实现具有长寿命和高可靠性的AlGaInN半导体激光器的半导体激光器，其具有优异的特性并且具有比405nm长的振荡波长，并且提供一种制造方法 一样。 解决方案：在低缺陷密度区域1中规则地具有带状高缺陷密度区域2的GaN衬底1上生长形成激光器结构的AlGaInN半导体层，并且通过将激光条形成为AlGaInN半导体激光器 AlGaInN半导体层。 在这种情况下，将激光条的端部和最近的第二区域的端部之间的距离（d）设定为0μm至60μm的值或10μm至50μm的值。 版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JP2004247563A
公开(公告)日：2004-09-02
申请号：JP2003036482
申请日：2003-02-14
Inventor： FUNATO KENJI
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor device which is suitable for a light-emitting element emitting blue light or green light by providing a semiconductor layer having desired indium composition.
SOLUTION: On a board 11 consisting of sapphire, respective layers including an active layer 17 are laminated via a low temperature buffer layer 12 and a base layer 13. The active layer 17 has a quantum well structure consisting of AlGaInN mixed crystal as the whole, and the indium composition of a well layer is ≥14 % e.g. The base layer 13 consists of GaInN mixed crystal, and a grid constant difference thereof with the well layer of the active layer 17 is within 1 %. Compared with a buffer layer consisting of conventional GaN, the grid constant of the base layer 13 is close to the grid contact of the active layer 17, and indium is easily fetched without generating a defect to the active layer 17 in the growth of crystal. Further, distortion to be introduced to the active layer 17 is reduced, and Stark effect hardly comes to appear.
COPYRIGHT: (C)2004,JPO&NCIPI-
公开(公告)号：JPH0997802A
公开(公告)日：1997-04-08
申请号：JP27686095
申请日：1995-09-29
Applicant: SONY CORP
Inventor： ASANO TAKEHARU , FUNATO KENJI
IPC: H01L21/203 , H01L21/36 , H01L21/363 , H01L21/365 , H01L27/12 , H01L33/06 , H01L33/10 , H01L33/12 , H01L33/28 , H01L33/30 , H01S5/00 , H01L33/00 , H01S3/18
Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laminate structure which is formed by laminating a high-quality Te II-VI compound semiconductor layer on a high- quality, large area and low-cost semiconductor substrate. SOLUTION: At the time of growing a Te II-VI compound semiconductor layer, for example, ZnTe layers 2 and 4 on a semiconductor substrate, for example, GaAs substrate 1, a Te II-VI compound semiconductor strain superlattice layer composed of an MgTe II-VI compound semiconductor layer and a Te II-VI compound semiconductor layer, for example, a ZnMgTe/ZnTe strain superlattice layer 3, is inserted into a growing layer.
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公开(公告)号：JPH07335990A
公开(公告)日：1995-12-22
申请号：JP15667194
申请日：1994-06-14
Applicant: SONY CORP
Inventor： ASANO TAKEHARU , FUNATO KENJI , TODA ATSUSHI
Abstract: PURPOSE:To provide a light emission at a high efficiency wherein desired band gap can be set with matching the lattice of crystals in a ZnTe active layer with that in two clad layers by forming such a structure that the active layer is held between the clad layers and using ZnMgSeTe for making the clad layers. CONSTITUTION:A light emitting element 1 has a GH structure wherein specified active layer 2 is held between a 1st and second clad layers 3 and 4 and laminated on a GaAs, InAs or GaSb substrate 10. The layers 3 and 4 have a ZnxMg1-xSeyTe1-y mixed crystal structure wherein they make the lattice matching with the active layer 2 and have larger band gaps than that of this layer. By using the clad layers, a light emitting element 1 having no lattice defect and a high-efficiency light emission owing to the active layer 2 can be made. Since the lattice matching of the layers 3 and 4 is made with the layer 2, the thickness setting of each layer can be set freely.
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Patent Agency Ranking
公开(公告)号：JPH07240383A
公开(公告)日：1995-09-12
申请号：JP5517294
申请日：1994-02-28
Applicant: SONY CORP
Inventor： KIJIMA SATORU , KAWASUMI TAKAYUKI , ASANO TAKEHARU , TODA ATSUSHI , FUNATO KENJI
IPC: H01L21/205 , H01L21/02 , H01L21/203 , H01S3/23 , H01S5/00 , H01S3/18
Abstract: PURPOSE:To provide a forming method of a semiconductor thin film composed of a compound semiconductor layer wherein crystal defect is eliminated, optical characteristics are improved, and film thickness is excellently controlled. CONSTITUTION:After an etching stopper layer (GaInP layer 12) is formed on a compound semiconductor substrate (GaAs substrate 11) in a first process, a compound semiconductor layer (ZnSe layer 13) is deposited on the GaInP layer 12 by an MOCVD method or an MBE method. After a first reflecting film 14 is formed on the ZnSe layer 13 in a second process, a substrate 15 is stuck on the first reflecting film 14 side in a third process. After that, in a fourth process, the GaAs substrate 11 and the GaInP layer 12 are selectively eliminated by etching, and the surface of the ZnSe layer 13 is exposed. Further in a fifth process, a second reflecting film 17 is formed on the surface of the ZnSe layer 13.
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公开(公告)号：JPH05326439A
公开(公告)日：1993-12-10
申请号：JP14791692
申请日：1992-05-15
Applicant: SONY CORP
Inventor： NAKAMURA FUMIHIKO , FUNATO KENJI , TAIRA KENICHI , KAWAI HIROHARU
Abstract: PURPOSE:To provide an ohmic electrode wherein the thickness of a GaSb-based compound semiconductor layer can be made thin and to provide its formation method. CONSTITUTION:The formation method of an ohmic electrode is composed of the following: a process wherein cap layers 3O, 32 which are composer of a mixes-crystal system containing In are formed on GaSb-based compound semiconductor layers 12, 22; and a process wherein, after electrode-material layers 24, 28 have been formed on the cap layers, a heat treatment is executed. The ohmic electrode is composer of the following: the cap layers which have been former on the Gaps-based compound semiconductor layers 12, 22 and which are composed of the mixed-crystal system containing the In; and the electrode- material layers 24, 28 which are formed on the cap layers.
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公开(公告)号：JPH0434946A
公开(公告)日：1992-02-05
申请号：JP14056290
申请日：1990-05-30
Applicant: SONY CORP
Inventor： FUNATO KENJI , ISHIBASHI AKIRA , NITTA SACHIYO , OGAWA MASAMICHI
IPC: H01L29/812 , H01L21/338 , H01L29/778
Abstract: PURPOSE:To make it possible to improve characteristics without restriction with a saturating speed by providing the relationship expressed by specified expressions between the gate length and the gate-drain distance of a Schottky- gate type field effect transistor. CONSTITUTION:When a gate length is made to be L9 and a gate-drain distance is made to be LGD, L9+LGD ) is specified. In the expression, VF is a Fermi velocity, tauin is an inelastic scattering time and D is a diffusion coefficient. Here, min(VFtauin, (Dtauin) ) represents the minimum value among VFtauin and (Dtauin) . A cap layer 5 is formed on a semiconductor substrate 3. A source electrode 8 whose lowest layer is formed of a germanium layer 6 and a drain electrode 9 are formed on the cap layer 5. With the source electrode 8 and the drain electrode 9 as masks, the cap layer 5 is etched, and the semiconductor substrate 3 is partially exposed. A gate electrode 10 is formed on a semiconductor substrate 4 in the exposed part.
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公开(公告)号：JPH033351A
公开(公告)日：1991-01-09
申请号：JP13808389
申请日：1989-05-31
Applicant: SONY CORP
Inventor： ISHIBASHI AKIRA , FUNATO KENJI , MORI YOSHIFUMI
IPC: H01L21/768 , H01L21/312 , H01L23/522
Abstract: PURPOSE:To form multilayer wiring without generating step-cut in an extremely fine region by a method wherein, by projecting a charged particle beam on the lower layer wiring at the intersecting part of wirings in an atmosphere containing gas-state raw material, an insulating film composed of material produced from the above raw material is formed, and an upper layer wiring is formed on the insulating film. CONSTITUTION:On a wiring 2 at least on an intersecting part of the wiring 2 formed on a substrate 1 and a wiring 6 which is the upper layer of the wiring 2, a charged particle beam 8 is projected in an atmosphere containing gas-state raw material, thereby forming an insulating film 4 composed of material produced from the above raw material, and an upper layer wiring 5 is formed on the insulating film 4. For example, a semiconductor substrate 1 is arranged in a highly vacuumized specimen chamber of an electron beam irradiating apparatus, and raw material gas like gas-state alkyl naphthalene is introduced into the specimen chamber. When the pressure of the raw material gas in the specimen chamber reaches a specified value, the electron beam 3 is generated, and the wiring 2 surface is scanned by the electron beam 3. Thus an insulating film 4 composed of amorphous hydrogen carbide based material is formed so as to cover the wiring 2.
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公开(公告)号：JPH02241023A
公开(公告)日：1990-09-25
申请号：JP6273989
申请日：1989-03-15
Applicant: SONY CORP
Inventor： FUNATO KENJI , ISHIBASHI AKIRA , MORI YOSHIFUMI
IPC: H01L21/027
Abstract: PURPOSE:To form a pattern of extremely narrow width of high alignment precision for an alignment pattern by a method wherein an alignment pattern formed on a substrate is irradiated with charged particle beam in a material gas atmosphere, and generated secondary electron or reflected electron is detected, thereby performing alignment. CONSTITUTION:In a material gas atmosphere, an alignment pattern 2 formed on a substrate 1 is irradiated with charged particle beam 3. Secondary electron generated by the irradiation or reflected electron is detected, thereby performing alignment. For example, a semiconductor substrate 1 is arranged in a sample chamber of an electron beam irradiation apparatus; resist material gas like alkylnaphthalene is introduced; the pressure of the gas is kept about 10 -10 Torr. By the electron beam 3, the pattern 2 is scanned in the direction parallel with the upper side 2a; the semiconductor substrate 1 is moved in the arrow direction; the position of the upper side 2a of the pattern 2 is detected by the intensity of secondary electron emission. In this state, the substrate is canned along the upper side 2a by the electron beam 3. Hence a resist pattern 4 composed of amorphous hydrogencarbon is formed.
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